Abstract: The invention relates to a component (10) having a semiconductor layer sequence, which has a p-conducting semiconductor layer (1), an n-conducting semiconductor layer (2), and an active zone (3) arranged between the p-conducting semiconductor layer and the n-conducting semiconductor layer, wherein the active zone has a multiple quantum well structure, which, from the p-conducting semiconductor layer to the n-conducting semiconductor layer, has a plurality of p-side barrier layers (32p) having intermediate quantum well layers (31) and a plurality of n-side barrier layers (32n) having intermediate quantum layers (31). Recesses (4) having flanks are formed in the semiconductor layer sequence on the part of the p-conducting semiconductor layer, wherein the quantum well layers and/or the n- and p-side barrier layers extend in a manner conforming to the flanks of the recesses at least in regions. The interior barrier layers have a larger average layer thickness than the p-side barrier layers.

Abstract: An optoelectronic semiconductor component is specified, comprising a multiplicity of radiation generating elements (14) arranged at a distance from one another on a surface (22) of a carrier element (20), wherein each of the radiation generating elements has a diameter of less than 10 ?m in a direction perpendicular to the surface of the carrier element and adheres to the surface of the carrier element in the region of a respective connection location (26), and wherein the optoelectronic semiconductor component is free of a growth substrate (2).

Abstract: Described is a method for producing a nitride compound semiconductor layer, involving the steps of:—depositing a first seed layer (1) comprising a nitride compound semiconductor material on a substrate (10);—desorbing at least some of the nitride compound semiconductor material in the first seed layer from the substrate (10);—depositing a second seed layer (2) comprising a nitride compound semiconductor material; and—growing the nitride compound semiconductor layer (3) containing a nitride compound semiconductor material onto the second seed layer (2).

Abstract: Described is a method for producing a nitride compound semiconductor layer, involving the steps of:—depositing a first seed layer (1) comprising a nitride compound semiconductor material on a substrate (10);—desorbing at least some of the nitride compound semiconductor material in the first seed layer from the substrate (10);—depositing a second seed layer (2) comprising a nitride compound semiconductor material; and—growing the nitride compound semiconductor layer (3) containing a nitride compound semiconductor material onto the second seed layer (2).

Abstract: A method for producing an electronic semiconductor chip and a semiconductor chip are disclosed. In embodiments, the method includes providing a growth substrate having a growth surface formed by a flat region having a plurality of three-dimensional surface structures on the flat region, directly applying a nucleation layer of oxygen-containing AlN over a large area to the growth surface and growing a nitride-based semiconductor layer sequence on the nucleation layer, wherein growing the semiconductor layer sequence includes selectively growing the semiconductor layer sequence upwards from the flat region.

Abstract: In at least one embodiment, the method is designed to produce an active zone for an optoelectronic semiconductor chip and comprises the following steps: growing a fourth barrier layer (24) based on Alx4Iny4Ga1?x4?y4N where 0?x4?0.40 and on average 0<y4?0.4, wherein the In content increases along a growth direction (z), growing a quantum well layer (20) on the fourth barrier layer (24), wherein the quantum well layer (20) is based on InyGa1?yN where 0.08?y?0.35, growing a first barrier layer (21) based on Alx1Iny1Ga1?x1?y1N where 0?x1?0.40 and on average 0<y1?0.4 onto the quantum well layer (20), wherein the In content decreases along the growth direction (z), growing a second barrier layer (22) based on GaN onto the first barrier layer (21), and growing a third barrier layer (23) based on GaN onto the second barrier layer (22), wherein the third barrier layer (23) is grown with the addition of H2 gas.

Abstract: In at least one embodiment, the method is designed to produce an active zone for an optoelectronic semiconductor chip and comprises the following steps: growing a fourth barrier layer (24) based on Alx4Iny4Ga1-x4-y4N where 0?x4?0.40 and on average 0<y4?0.4, wherein the In content increases along a growth direction (z), growing a quantum well layer (20) on the fourth barrier layer (24), wherein the quantum well layer (20) is based on InyGa1-yN where 0.08?y?0.35, growing a first barrier layer (21) based on Alx1Iny1Ga1-x1-y1N where 0?x1?0.40 and on average 0<y1?0.4 onto the quantum well layer (20), wherein the In content decreases along the growth direction (z), growing a second barrier layer (22) based on GaN onto the first barrier layer (21), and growing a third barrier layer (23) based on GaN onto the second barrier layer (22), wherein the third barrier layer (23) is grown with the addition of H2 gas.