Patents by Inventor Thomas M. Shaw

Thomas M. Shaw has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200312788
    Abstract: A semiconductor device that includes a substrate having integrated circuits; a plurality of metallization layers on the substrate, the plurality of metallization layers having a peripheral region adjacent to a kerf region of the semiconductor device and containing a crack stop structure extending through the plurality of metallization layers; a trench extending through the plurality of metallization layers and adjacent to the crack stop structure, the trench filled with a material that creates compressive stresses between the filled trench and the adjacent metallization layers to form a compressive zone adjacent to the crack stop structure. Also disclosed is a method for forming the semiconductor device.
    Type: Application
    Filed: April 1, 2019
    Publication date: October 1, 2020
    Inventors: Kirk D. Peterson, Thomas A. Wassick, Nicolas Pizzuti, Thomas M. Shaw
  • Patent number: 10636750
    Abstract: A semiconductor device which includes a substrate having integrated circuits; and metallization layers on the substrate, the metallization layers having a peripheral region adjacent to a kerf region of the semiconductor device and containing a crack stop structure. The crack stop structure includes a bottom portion containing a plurality of the metallization layers connected by vias with each metallization layer decreasing in width in a step pyramid structure from a bottom of the bottom portion to a top of the bottom portion; and a top portion containing a top metallization layer of the metallization layers connected to the bottom portion, the top metallization layer being wider than a top-most metallization layer of the bottom portion and having a segment that extends toward the kerf region so as to create an overhang with respect to the bottom portion.
    Type: Grant
    Filed: October 15, 2018
    Date of Patent: April 28, 2020
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Shidong Li, Kirk D. Peterson, Nicolas Pizzuti, Thomas M. Shaw, Thomas A. Wassick
  • Publication number: 20200118942
    Abstract: A semiconductor device which includes a substrate having integrated circuits; and metallization layers on the substrate, the metallization layers having a peripheral region adjacent to a kerf region of the semiconductor device and containing a crack stop structure. The crack stop structure includes a bottom portion containing a plurality of the metallization layers connected by vias with each metallization layer decreasing in width in a step pyramid structure from a bottom of the bottom portion to a top of the bottom portion; and a top portion containing a top metallization layer of the metallization layers connected to the bottom portion, the top metallization layer being wider than a top-most metallization layer of the bottom portion and having a segment that extends toward the kerf region so as to create an overhang with respect to the bottom portion.
    Type: Application
    Filed: October 15, 2018
    Publication date: April 16, 2020
    Inventors: Shidong Li, Kirk D. Peterson, Nicolas Pizzuti, Thomas M. Shaw, Thomas A. Wassick
  • Publication number: 20200006226
    Abstract: Techniques for improving reliability in Cu interconnects using Cu intermetallics are provided. In one aspect, a method of forming a Cu interconnect in a dielectric over a Cu line includes the steps of: forming at least one via in the dielectric over the Cu line; depositing a metal layer onto the dielectric and lining the via such that the metal layer is in contact with the Cu line at the bottom of the via, wherein the metal layer comprises at least one metal that can react with Cu to form a Cu intermetallic; annealing the metal layer and the Cu line under conditions sufficient to form a Cu intermetallic barrier at the bottom of the via; and plating Cu into the via to form the Cu interconnect, wherein the Cu interconnect is separated from the Cu line by the Cu intermetallic barrier. A device structure is also provided.
    Type: Application
    Filed: September 13, 2019
    Publication date: January 2, 2020
    Inventors: Chao-Kun Hu, Christian Lavoie, Stephen M. Rossnagel, Thomas M. Shaw
  • Publication number: 20200006227
    Abstract: Techniques for improving reliability in Cu interconnects using Cu intermetallics are provided. In one aspect, a method of forming a Cu interconnect in a dielectric over a Cu line includes the steps of: forming at least one via in the dielectric over the Cu line; depositing a metal layer onto the dielectric and lining the via such that the metal layer is in contact with the Cu line at the bottom of the via, wherein the metal layer comprises at least one metal that can react with Cu to form a Cu intermetallic; annealing the metal layer and the Cu line under conditions sufficient to form a Cu intermetallic barrier at the bottom of the via; and plating Cu into the via to form the Cu interconnect, wherein the Cu interconnect is separated from the Cu line by the Cu intermetallic barrier. A device structure is also provided.
    Type: Application
    Filed: September 13, 2019
    Publication date: January 2, 2020
    Inventors: Chao-Kun Hu, Christian Lavoie, Stephen M. Rossnagel, Thomas M. Shaw
  • Patent number: 10486832
    Abstract: A method of protecting a monument during manufacturing of a vehicle. The method includes attaching a plurality of brackets to the monument prior to installation in the vehicle, each of the plurality of brackets having corresponding fasteners facing outwardly relative to the monument. The method also includes connecting a blanket to the corresponding fasteners. The method also includes installing the monument in the vehicle, disconnecting the blanket, and removing the plurality of brackets from the monument.
    Type: Grant
    Filed: April 6, 2016
    Date of Patent: November 26, 2019
    Assignee: The Boeing Company
    Inventors: Ryan Nelson Marcelo Abelon, Cory M. Hitchcock, Toai Dac Tran, Thomas Ralph Smith, Jr., Jon Burton Shaw
  • Patent number: 10461026
    Abstract: Techniques for improving reliability in Cu interconnects using Cu intermetallics are provided. In one aspect, a method of forming a Cu interconnect in a dielectric over a Cu line includes the steps of: forming at least one via in the dielectric over the Cu line; depositing a metal layer onto the dielectric and lining the via such that the metal layer is in contact with the Cu line at the bottom of the via, wherein the metal layer comprises at least one metal that can react with Cu to form a Cu intermetallic; annealing the metal layer and the Cu line under conditions sufficient to form a Cu intermetallic barrier at the bottom of the via; and plating Cu into the via to form the Cu interconnect, wherein the Cu interconnect is separated from the Cu line by the Cu intermetallic barrier. A device structure is also provided.
    Type: Grant
    Filed: June 30, 2016
    Date of Patent: October 29, 2019
    Assignee: International Business Machines Corporation
    Inventors: Chao-Kun Hu, Christian Lavoie, Stephen M. Rossnagel, Thomas M. Shaw
  • Patent number: 10354824
    Abstract: A piezoelectronic switch device for radio frequency (RF) applications includes a piezoelectric (PE) material layer and a piezoresistive (PR) material layer separated from one another by at least one electrode, wherein an electrical resistance of the PR material layer is dependent upon an applied voltage across the PE material layer by way of an applied pressure to the PR material layer by the PE material layer; and a conductive, high yield material (C-HYM) comprising a housing that surrounds the PE material layer, the PR material layer and the at least one electrode, the C-HYM configured to mechanically transmit a displacement of the PE material layer to the PR material layer such that applied voltage across the PE material layer causes an expansion thereof and an increase the applied pressure to the PR material layer, thereby causing a decrease in the electrical resistance of the PR material layer.
    Type: Grant
    Filed: May 25, 2016
    Date of Patent: July 16, 2019
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Matthew W. Copel, Bruce G. Elmegreen, Glenn J. Martyna, Dennis M. Newns, Thomas M. Shaw, Paul M. Solomon
  • Patent number: 10203199
    Abstract: A method is presented for determining strain in a magnetoresistive random access memory (MRAM) structure. The method includes exposing long lines of the MRAM structure to monochromatic light to produce a diffraction pattern, measuring changes in interference fringe spacing in the diffraction pattern, determining the changes in the local strain in the MRAM structure from the measured changes in the interference fringe spacing, and assessing a performance of the MRAM structure from values of the changes in the local strain.
    Type: Grant
    Filed: November 2, 2017
    Date of Patent: February 12, 2019
    Assignee: International Business Machines Corporation
    Inventors: Anthony J. Annunziata, Chandrasekharan Kothandaraman, Thomas M. Shaw
  • Patent number: 10168143
    Abstract: A method is presented for determining strain in a magnetoresistive random access memory (MRAM) structure. The method includes exposing long lines of the MRAM structure to monochromatic light to produce a diffraction pattern, measuring changes in interference fringe spacing in the diffraction pattern, determining the changes in the local strain in the MRAM structure from the measured changes in the interference fringe spacing, and assessing a performance of the MRAM structure from values of the changes in the local strain.
    Type: Grant
    Filed: March 8, 2017
    Date of Patent: January 1, 2019
    Assignee: International Business Machines Corporation
    Inventors: Anthony J. Annunziata, Chandrasekharan Kothandaraman, Thomas M. Shaw
  • Publication number: 20180259322
    Abstract: A method is presented for determining strain in a magnetoresistive random access memory (MRAM) structure. The method includes exposing long lines of the MRAM structure to monochromatic light to produce a diffraction pattern, measuring changes in interference fringe spacing in the diffraction pattern, determining the changes in the local strain in the MRAM structure from the measured changes in the interference fringe spacing, and assessing a performance of the MRAM structure from values of the changes in the local strain.
    Type: Application
    Filed: March 8, 2017
    Publication date: September 13, 2018
    Inventors: Anthony J. Annunziata, Chandrasekharan Kothandaraman, Thomas M. Shaw
  • Publication number: 20180259323
    Abstract: A method is presented for determining strain in a magnetoresistive random access memory (MRAM) structure. The method includes exposing long lines of the MRAM structure to monochromatic light to produce a diffraction pattern, measuring changes in interference fringe spacing in the diffraction pattern, determining the changes in the local strain in the MRAM structure from the measured changes in the interference fringe spacing, and assessing a performance of the MRAM structure from values of the changes in the local strain.
    Type: Application
    Filed: November 2, 2017
    Publication date: September 13, 2018
    Inventors: Anthony J. Annunziata, Chandrasekharan Kothandaraman, Thomas M. Shaw
  • Patent number: 9939486
    Abstract: Methods for reliability testing include applying a stress voltage to a device under test (DUT); measuring a leakage current across the DUT; triggering measurement of optical emissions from the DUT based on the timing of the measurement of the leakage current; and correlating measurements of the leakage current with measurements of the optical emissions to determine a time and location of a defect occurrence within the DUT by locating instances of increased noise in the leakage current that correspond in time with instances of increased optical emissions.
    Type: Grant
    Filed: January 11, 2017
    Date of Patent: April 10, 2018
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Jifeng Chen, Dirk Pfeiffer, Thomas M. Shaw, Peilin Song, Franco Stellari
  • Patent number: 9881759
    Abstract: A piezoelectronic switch device for radio frequency (RF) applications includes a piezoelectric (PE) material layer and a piezoresistive (PR) material layer separated from one another by at least one electrode, wherein an electrical resistance of the PR material layer is dependent upon an applied voltage across the PE material layer by way of an applied pressure to the PR material layer by the PE material layer; and a conductive, high yield material (C-HYM) comprising a housing that surrounds the PE material layer, the PR material layer and the at least one electrode, the C-HYM configured to mechanically transmit a displacement of the PE material layer to the PR material layer such that applied voltage across the PE material layer causes an expansion thereof and an increase the applied pressure to the PR material layer, thereby causing a decrease in the electrical resistance of the PR material layer.
    Type: Grant
    Filed: June 22, 2015
    Date of Patent: January 30, 2018
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Matthew W. Copel, Bruce G. Elmegreen, Glenn J. Martyna, Dennis M. Newns, Thomas M. Shaw, Paul M. Solomon
  • Patent number: 9874601
    Abstract: Systems for reliability testing include a picometer configured to measure a leakage current across a device under test (DUT); a camera configured to measure optical emissions from the DUT based on a timing of the measurement of the leakage current; and a test system configured to apply a stress voltage to the DUT and to correlate the leakage current with the optical emissions using a processor to determine a time and location of a defect occurrence within the DUT by locating instances of increased noise in the leakage current that correspond in time with instances of increased optical emissions.
    Type: Grant
    Filed: September 7, 2016
    Date of Patent: January 23, 2018
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Jifeng Chen, Dirk Pfeiffer, Thomas M. Shaw, Peilin Song, Franco Stellari
  • Publication number: 20180005939
    Abstract: Techniques for improving reliability in Cu interconnects using Cu intermetallics are provided. In one aspect, a method of forming a Cu interconnect in a dielectric over a Cu line includes the steps of: forming at least one via in the dielectric over the Cu line; depositing a metal layer onto the dielectric and lining the via such that the metal layer is in contact with the Cu line at the bottom of the via, wherein the metal layer comprises at least one metal that can react with Cu to form a Cu intermetallic; annealing the metal layer and the Cu line under conditions sufficient to form a Cu intermetallic barrier at the bottom of the via; and plating Cu into the via to form the Cu interconnect, wherein the Cu interconnect is separated from the Cu line by the Cu intermetallic barrier. A device structure is also provided.
    Type: Application
    Filed: June 30, 2016
    Publication date: January 4, 2018
    Inventors: Chao-Kun Hu, Christian Lavoie, Stephen M. Rossnagel, Thomas M. Shaw
  • Patent number: 9738560
    Abstract: A method of manufacturing a glass substrate to control the fragmentation characteristics by etching and filling trenches in the glass substrate is disclosed. An etching pattern may be determined. The etching pattern may outline where trenches will be etched into a surface of the glass substrate. The etching pattern may be configured so that the glass substrate, when fractured, has a smaller fragmentation size than chemically strengthened glass that has not been etched. A mask may be created in accordance with the etching pattern, and the mask may be applied to a surface of the glass substrate. The surface of the glass substrate may then be etched to create trenches. A filler material may be deposited into the trenches.
    Type: Grant
    Filed: May 24, 2016
    Date of Patent: August 22, 2017
    Assignee: International Business Machines Corporation
    Inventors: Cyril Cabral, Jr., Fuad E. Doany, Gregory M. Fritz, Michael S. Gordon, Qiang Huang, Eric P. Lewandowski, Xiao Hu Liu, Kenneth P. Rodbell, Thomas M. Shaw
  • Publication number: 20170122999
    Abstract: Methods for reliability testing include applying a stress voltage to a device under test (DUT); measuring a leakage current across the DUT; triggering measurement of optical emissions from the DUT based on the timing of the measurement of the leakage current; and correlating measurements of the leakage current with measurements of the optical emissions to determine a time and location of a defect occurrence within the DUT by locating instances of increased noise in the leakage current that correspond in time with instances of increased optical emissions.
    Type: Application
    Filed: January 11, 2017
    Publication date: May 4, 2017
    Inventors: Jifeng Chen, Dirk Pfeiffer, Thomas M. Shaw, Peilin Song, Franco Stellari
  • Publication number: 20170084413
    Abstract: A piezoelectronic switch device for radio frequency (RF) applications includes a piezoelectric (PE) material layer and a piezoresistive (PR) material layer separated from one another by at least one electrode, wherein an electrical resistance of the PR material layer is dependent upon an applied voltage across the PE material layer by way of an applied pressure to the PR material layer by the PE material layer; and a conductive, high yield material (C-HYM) comprising a housing that surrounds the PE material layer, the PR material layer and the at least one electrode, the C-HYM configured to mechanically transmit a displacement of the PE material layer to the PR material layer such that applied voltage across the PE material layer causes an expansion thereof and an increase the applied pressure to the PR material layer, thereby causing a decrease in the electrical resistance of the PR material layer.
    Type: Application
    Filed: June 22, 2015
    Publication date: March 23, 2017
    Inventors: Matthew W. Copel, Bruce G. Elmegreen, Glenn J. Martyna, Dennis M. Newns, Thomas M. Shaw, Paul M. Solomon
  • Patent number: 9586857
    Abstract: A method of manufacturing a glass substrate to control the fragmentation characteristics by etching and filling trenches in the glass substrate is disclosed. An etching pattern may be determined. The etching pattern may outline where trenches will be etched into a surface of the glass substrate. The etching pattern may be configured so that the glass substrate, when fractured, has a smaller fragmentation size than chemically strengthened glass that has not been etched. A mask may be created in accordance with the etching pattern, and the mask may be applied to a surface of the glass substrate. The surface of the glass substrate may then be etched to create trenches. A filler material may be deposited into the trenches.
    Type: Grant
    Filed: April 30, 2015
    Date of Patent: March 7, 2017
    Assignee: International Business Machines Corporation
    Inventors: Cyril Cabral, Jr., Fuad E. Doany, Gregory M. Fritz, Michael S. Gordon, Qiang Huang, Eric P. Lewandowski, Xiao Hu Liu, Kenneth P. Rodbell, Thomas M. Shaw