Abstract: A method and system for fabricating a device on a substrate with a process gas, such as with chemical vapor deposition. A reaction chamber and support chuck cooperate to form a low conductance configuration for axisymetric process gas flow over the substrate and to form a high conductance configuration for enhanced evacuation of residual process gas from the reaction chamber upon completion of the process. A dual conductance chuck has an indented region that aligns with the exhaust port of the reaction chamber to restrict process gas flow in the low conductance configuration, and that moves distal a showerhead and the exhaust port to provide reduced restriction of process gas flow for reaction chamber evacuation. The chuck includes thermal control for enhancing film deposition on the substrate and for reducing residual film deposition on the chuck. An evacuation opening in the housing provides independent evacuation of residual gas from the housing.

Abstract: A magnetron sputtering system is provided that uses cooling channels in the magnetron assembly to cool the target. The magnetron sputtering system also generates low pressure region in the magnetron assembly such that the backing plate sees a pressure differential much lower than atmospheric pressure. In one embodiment, the backing plate includes a center post to support the backing plate during operation. The backing plate is reduced in thickness and provides less of a barrier to the generated magnetic field.

Abstract: A method and system for fabricating a device on a substrate with a process gas, such as with chemical vapor deposition. A reaction chamber and support chuck cooperate to form a low conductance configuration for axisymetric process gas flow over the substrate and to form a high conductance configuration for enhanced evacuation of residual process gas from the reaction chamber upon completion of the process. A dual conductance chuck has an indented region that aligns with the exhaust port of the reaction chamber to restrict process gas flow in the low conductance configuration, and that moves distal a showerhead and the exhaust port to provide reduced restriction of process gas flow for reaction chamber evacuation. The chuck includes thermal control for enhancing film deposition on the substrate and for reducing residual film deposition on the chuck. An evacuation opening in the housing provides independent evacuation of residual gas from the housing.

Abstract: A temperature controlled chuck (20) includes a heating unit (24) and a cooling unit (34). A first cavity (30) separates the heating unit (24) from a wafer substrate (18), and a second cavity (50) separates the cooling unit (34) from the heating unit (24). A first fluid delivery system (60) conducts fluid to the first cavity (30) to facilitate exchanges of heat between the heating unit (24) and the substrate (18). A second fluid delivery system (70) conducts fluid to the second cavity (50) to facilitate exchanges of heat between the heating unit (24) and the cooling unit (34). A control system (90) raises the temperature of the substrate (18) by increasing power to the heating unit (24) and by evacuating fluid from the second cavity (50) and lowers the temperature of the substrate (18) by reducing power to the heating unit (24) and by conducting fluid to the second cavity (50).

Abstract: A magnetron sputtering system is provided that uses cooling channels in the magnetron assembly to cool the target. The magnetron sputtering system also generates low pressure region in the magnetron assembly such that the backing plate sees a pressure differential much lower than atmospheric pressure. The backing plate is reduced in thickness and provides less of a barrier to the generated magnetic field.

Abstract: A temperature controlled chuck (20) includes a heating unit (24) and a cooling unit (34). A first cavity (30) separates the heating unit (24) from a wafer substrate (18), and a second cavity (50) separates the cooling unit (34) from the heating unit (24). A first fluid delivery system (60) conducts fluid to the first cavity (30) to facilitate exchanges of heat between the heating unit (24) and the substrate (18). A second fluid delivery system (70) conducts fluid to the second cavity (50) to facilitate exchanges of heat between the heating unit (24) and the cooling unit (34). A control system (90) raises the temperature of the substrate (18) by increasing power to the heating unit (24) and by evacuating fluid from the second cavity (50) and lowers the temperature of the substrate (18) by reducing power to the heating unit (24) and by conducting fluid to the second cavity (50).

Abstract: A high magnetic flux permanent magnet array apparatus and method for high productivity physical vapor deposition includes a magnetron array with a plurality of magnet assemblies disposed proximate to a target. Each assembly comprises a first portion magnetized perpendicularly to the target, a second portion magnetized perpendicularly to the target and opposite the first portion, and a third portion positioned intermediate the first and second portions, the third portion magnetized parallel to the target.

Abstract: A method is described for fabricating integrated semiconductor circuits and, more particularly, for the selective deposition of a conductor onto a substrate employing a chemical vapor deposition process. By way of example, tungsten can be selectively deposited onto a silicon substrate. At the onset of loss of selectivity of deposition of tungsten onto the silicon substrate, the deposition process is interrupted and unwanted tungsten which has deposited on a mask layer with the silicon substrate can be removed employing a halogen etchant. Thereafter, a plurality of deposition/etch back cycles can be carried out to achieve a predetermined thickness of tungsten.