Patents by Inventor Thomas Stockmeier

Thomas Stockmeier has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5040042
    Abstract: In the case of a symmetrically constructed TRIAC, which comprises a semiconductor substrate (20) with an internal n-base layer (9), two adjoining p-base layers (7, 11), two n-emitter regions (4, 12) let into the p-base layers (7, 11), two main electrodes (1, 17) arranged on the principal faces (29, 30), and two firing devices, a simplified control is achieved by means of MOS-controlled short circuits (3, 5, 6, 7 or 11, 13, 14, 16) at the n-emitter regions (4 or 12).
    Type: Grant
    Filed: April 25, 1990
    Date of Patent: August 13, 1991
    Assignee: ASEA Brown Boveri Ltd.
    Inventors: Friedhelm Bauer, Thomas Stockmeier
  • Patent number: 4985741
    Abstract: In an MOS-controlled bipolar power semiconductor component, a recombination layer (10), which is doped with the same polarity as the base layer but more highly, is inserted, starting with the structure of an IGBT, into the base layer between anode (A) and cathode (K), which recombination layer divides the base layer into an upper and lower base layer (7a and 7b, respectively). The resultant structure forms a series circuit of MOSFET (T) and PIN diode (D) which is free of latch-up and provides the possibility of higher blocking voltages.
    Type: Grant
    Filed: June 14, 1990
    Date of Patent: January 15, 1991
    Assignee: Asea Brown Boveri Ltd.
    Inventors: Friedhelm Bauer, Thomas Stockmeier