Abstract: According to one exemplary embodiment, a method for forming a photoresist pattern on a semiconductor wafer includes forming a photoresist including an organic polymer matrix on the semiconductor wafer. The method further includes exposing the photoresist to a patterned radiation. The method further includes baking the photoresist after exposing the photoresist to the pattern radiation. The method further includes applying an oxidizing reagent to the photoresist to create the photoresist pattern corresponding to the patterned radiation.

Abstract: In one disclosed embodiment, a method for producing a high resolution resist pattern on a semiconductor wafer comprises depositing a blanket layer of material on a semiconductor wafer, forming a resist interaction substrate on the blanket layer of material, forming a resist layer of a pre-determined thickness on the resist interaction substrate, exposing the resist layer to a patterned radiation, and developing the resulting high resolution resist pattern. In one embodiment, patterned radiation is provided by an extreme ultraviolet (EUV) light source. In other embodiments, patterned radiation may be provided by an electron beam, or ion beam, for example. In one embodiment, the resist layer comprises a chemically amplified resist utilizing a photogenerated acid (PGA), and having a sublayer. In other embodiments, the resist layer includes an additive, for example, fullerite. One disclosed embodiment involves use of an ultra-thin resist layer in combination with a gold resist interaction substrate.

Abstract: In one disclosed embodiment, a method for forming a high resolution resist pattern on a semiconductor wafer involves forming a layer of resist comprising, for example a polymer matrix and a catalytic species, over a material layer formed over a semiconductor wafer; exposing the layer of resist to patterned radiation; and applying a magnetic field to the semiconductor wafer during a post exposure bake process. In one embodiment, the patterned radiation is provided by an extreme ultraviolet (EUV) light source. In other embodiments, the source of patterned radiation can be an electron beam, or ion beam, for example. In one embodiment, the polymer matrix is an organic polymer matrix such as, for example, styrene, acrylate, or methacrylate. In one embodiment, the catalytic species can be, for example, an acid, a base, or an oxidizing agent.

Abstract: According to one exemplary embodiment, a method for determining a power spectral density of an edge of at least one patterned feature situated over a semiconductor wafer includes measuring the edge of the at least one patterned feature at a number of points on the edge. The method further includes determining an autoregressive estimation of the edge of the at least one patterned feature using measured data corresponding to a number of points on the edge. The method further includes determining a power spectral density of the edge using autoregressive coefficients from the autoregressive estimation. The method further includes utilizing the power spectral density to characterize line edge roughness of the at least one patterned feature in a frequency domain.

Abstract: In one disclosed embodiment, the present method for determining resist suitability for semiconductor wafer fabrication comprises forming a layer of resist over a semiconductor wafer, exposing the layer of resist to patterned radiation, and determining resist suitability by using a scatterometry process prior to developing a lithographic pattern on the layer of resist. In one embodiment, the semiconductor wafer is heated in a post exposure bake process after scatterometry is performed. In one embodiment, the patterned radiation is provided by an extreme ultraviolet (EUV) light source in a lithographic process. In other embodiments, patterned radiation is provided by an electron beam, or ion beam, for example. In one embodiment, the present method determines out-gassing of a layer of resist during exposure to patterned radiation.

Abstract: According to one exemplary embodiment, an extreme ultraviolet (EUV) pellicle for protecting a lithographic mask includes an aerogel film. The pellicle further includes a frame for mounting the aerogel film over the lithographic mask. The aerogel film causes the pellicle to have increased EUV light transmittance.

Abstract: According to one exemplary embodiment, an extreme ultraviolet (EUV) source collector module for use in a lithographic tool comprises an EUV debris mitigation filter. The EUV debris mitigation filter can be in the form of an aerogel film, and can be used in combination with an EUV debris mitigation module comprising a combination of conventional debris mitigation techniques. The EUV debris mitigation filter protects collector optics from contamination by undesirable debris produced during EUV light emission, while advantageously providing a high level of EUV light transmittance. One disclosed embodiment comprises implementation of an EUV debris mitigation filter in an EUV source collector module utilizing a discharge-produced plasma (DPP) light source. One disclosed embodiment comprises implementation of an EUV debris mitigation filter in an EUV source collector module utilizing a laser-produced plasma (LPP) light source.

Abstract: Methods are provided for enhancing resolution of a chemically amplified photoresist. A film comprising a photoacid generator and a polymer comprising functional groups bonded to protecting moieties is deposited on a substrate. The film is exposed to patterned radiation. The patterned radiation results in protonation of a portion of the functional groups and the formation of a latent image within the film. The bonds between the protonated functional groups and the protecting moieties are selectively excited with non-thermal energy having a wavelength spectrum that resonantly cleaves the bonds.

Abstract: In one disclosed embodiment, the present method for determining resist suitability for semiconductor wafer fabrication comprises forming a layer of resist over a semiconductor wafer, exposing the layer of resist to patterned radiation, and determining resist suitability by using a scatterometry process prior to developing a lithographic pattern on the layer of resist. In one embodiment, the semiconductor wafer is heated in a post exposure bake process after scatterometry is performed. In one embodiment, the patterned radiation is provided by an extreme ultraviolet (EUV) light source in a lithographic process. In other embodiments, patterned radiation is provided by an electron beam, or ion beam, for example. In one embodiment, the present method determines out-gassing of a layer of resist during exposure to patterned radiation.

Abstract: In one disclosed embodiment, a method for producing a high resolution resist pattern on a semiconductor wafer comprises depositing a blanket layer of material on a semiconductor wafer, forming a resist interaction substrate on the blanket layer of material, forming a resist layer of a pre-determined thickness on the resist interaction substrate, exposing the resist layer to a patterned radiation, and developing the resulting high resolution resist pattern. In one embodiment, patterned radiation is provided by an extreme ultraviolet (EUV) light source. In other embodiments, patterned radiation may be provided by an electron beam, or ion beam, for example. In one embodiment, the resist layer comprises a chemically amplified resist utilizing a photogenerated acid (PGA), and having a sublayer. In other embodiments, the resist layer includes an additive, for example, fullerite. One disclosed embodiment involves use of an ultra-thin resist layer in combination with a gold resist interaction substrate.

Abstract: In one disclosed embodiment, a method for forming a high resolution resist pattern on a semiconductor wafer involves forming a layer of resist comprising, for example a polymer matrix and a catalytic species, over a material layer formed over a semiconductor wafer; exposing the layer of resist to patterned radiation; and applying a magnetic field to the semiconductor wafer during a post exposure bake process. In one embodiment, the patterned radiation is provided by an extreme ultraviolet (EUV) light source. In other embodiments, the source of patterned radiation can be an electron beam, or ion beam, for example. In one embodiment, the polymer matrix is an organic polymer matrix such as, for example, styrene, acrylate, or methacrylate. In one embodiment, the catalytic species can be, for example, an acid, a base, or an oxidizing agent.

Abstract: According to one exemplary embodiment, an extreme ultraviolet (EUV) source collector module for use in a lithographic tool comprises an EUV debris mitigation filter. The EUV debris mitigation filter can be in the form of an aerogel film, and can be used in combination with an EUV debris mitigation module comprising a combination of conventional debris mitigation techniques. The EUV debris mitigation filter protects collector optics from contamination by undesirable debris produced during EUV light emission, while advantageously providing a high level of EUV light transmittance. One disclosed embodiment comprises implementation of an EUV debris mitigation filter in an EUV source collector module utilizing a discharge-produced plasma (DPP) light source. One disclosed embodiment comprises implementation of an EUV debris mitigation filter in an EUV source collector module utilizing a laser-produced plasma (LPP) light source.

Abstract: According to one exemplary embodiment, a method for forming a photoresist pattern on a semiconductor wafer includes forming a photoresist including an organic polymer matrix on the semiconductor wafer. The method further includes exposing the photoresist to a patterned radiation. The method further includes baking the photoresist after exposing the photoresist to the pattern radiation. The method further includes applying an oxidizing reagent to the photoresist to create the photoresist pattern corresponding to the patterned radiation.

Abstract: According to one exemplary embodiment, a method for determining a power spectral density of an edge of at least one patterned feature situated over a semiconductor wafer includes measuring the edge of the at least one patterned feature at a number of points on the edge. The method further includes determining an autoregressive estimation of the edge of the at least one patterned feature using measured data corresponding to a number of points on the edge. The method further includes determining a power spectral density of the edge using autoregressive coefficients from the autoregressive estimation. The method further includes utilizing the power spectral density to characterize line edge roughness of the at least one patterned feature in a frequency domain.

Abstract: According to one exemplary embodiment, an extreme ultraviolet (EUV) pellicle for protecting a lithographic mask includes an aerogel film. The pellicle further includes a frame for mounting the aerogel film over the lithographic mask. The aerogel film causes the pellicle to have increased EUV light transmittance.

Abstract: Methods are provided for enhancing resolution of a chemically amplified photoresist. A film comprising a photoacid generator and a polymer comprising functional groups bonded to protecting moieties is deposited on a substrate. The film is exposed to patterned radiation. The patterned radiation results in protonation of a portion of the functional groups and the formation of a latent image within the film. The bonds between the protonated functional groups and the protecting moieties are selectively excited with non-thermal energy having a wavelength spectrum that resonantly cleaves the bonds.

Abstract: The present invention relates to cyclic polymers and their use in photolithographic applications. The cyclic polymers contain a pendant acid labile functional group and a functional group containing a protected hydroxyl moiety. The polymers are post modified by deprotecting the pendant hydroxyl moiety and reacting the deprotected hydroxyl containing moiety with a coreactant. The post-functionalized polymers find application in chemically amplified photoresist compositions.

Abstract: The present invention relates to a radiation sensitive photoresist composition comprising a photoacid initiator and a polycyclic polymer comprising repeating units that contain pendant acid labile groups. Upon exposure to an imaging radiation source the photoacid initiator generates an acid which cleaves the pendant acid labile groups effecting a polarity change in the polymer. The polymer is rendered soluble in an aqueous base in the areas exposed to the imaging source.

Abstract: The present invention relates to cyclic polymers and their use in photolithographic applications. The cyclic polymers contain a pendant acid labile functional group and a functional group containing a protected hydroxyl moiety.

Abstract: Polycyclic polymers containing pendant aromatic moieties are disclosed. The polymers exhibit light transparency properties to deep UV wave lengths making them useful for high resolution photolithographic applications. These polymers are particularly useful in chemically amplified positive and negative tone resists.