Abstract: A method is proposed for operating a sensor on or in a vehicle tyre, in particular an acceleration sensor and in particular for detecting a tyre rotation period and/or a tyre contact period, wherein the sensor is operated with a first sampling rate in a first time interval of a rotation of a tyre, and with a second sampling rate in a second time interval of the rotation of the tyre.

Abstract: A method for producing a component having a semiconductor substrate, in which porous semiconductor material is generated for the purpose of developing at least one thermally decoupled pattern. In the material that has been rendered porous, a recess or a plurality of recesses is/are etched to produce at least one region that is defined by the one recess or the plurality of recesses and is thermally decoupled. On the at least one region, the pattern to be thermally decoupled is then formed.

Abstract: A sensor system having a sensor module and an induction unit is provided, the sensor module having a first antenna, and the induction unit having a second and a third antenna, an induction transmission of signals being provided between the first and the second antenna, and the signals being sent and/or received electromagnetically by the third antenna.

Abstract: A component having an acceleration sensor having at least one freely oscillatory mass, and a resonator having at least one resonating structure, in which the at least one freely oscillatory mass of the acceleration sensor and the at least one resonating structure of the resonator are disposed on and/or in one chip. A corresponding production method for a component is also described.

Abstract: A structural element having a region of porous silicon or porous silicon oxide, which was obtained from a porization, starting from an edge area of the region, in at least largely crystalline silicon. Relative to the edge area, the crystalline silicon has a crystal orientation that has an orientation that differs from a <100> orientation or from an orientation that is equivalent for reasons of symmetry. This structural element is suited for use in a mass-flow sensor, in a component for the thermal decoupling of sensor and/or actuator structures, or a gas sensor. Furthermore, methods for setting the thermal conductivity of a region of porous silicon or porous silicon oxide of a structural element are described.

Abstract: In a method for manufacturing a semiconductor component having a semiconductor substrate, a flat, porous diaphragm layer and a cavity underneath the porous diaphragm layer are produced to form unsupported structures for a component. In a first approach, the semiconductor substrate may receive a doping in the diaphragm region that is different from that of the cavity. This permits different pore sizes and/or porosities to be produced, which is used in producing the cavity for improved etching gas transport. Also, mesopores may be produced in the diaphragm region and nanopores may be produced as an auxiliary structure in what is to become the cavity region.

Abstract: A method and a device for determining an acceleration peak, in particular for a tire, on the basis of a signal output by a sensor and assignable to the rotation of the tire, which signal corresponds to an acceleration, the determination being made by performing the following: recording at least one acceleration signal assignable to the rotation of the tire, the recording being carried out continuously; forming an average value from the recorded acceleration signal; comparing the recorded acceleration signal with the formed average value; forming a additional average value from the recorded acceleration signal; comparing the recorded acceleration signal with the formed average value; and determining the acceleration peak on the basis of the formed comparison.

Abstract: A bending transducer device for generating electrical energy from deformations, and a circuit module which has such a bending transducer. The bending transducer includes at least one electrically deformable, vibration-capable, electrically conductive support structure, one piezoelectric element and a first contacting element, the conductive support structure having a first restraining area and a second restraining area for restraining the support structure, the piezoelectric element being designed and situated on the support structure in such a way that the piezoelectric element is deformable due to the deformation of the support structure caused by vibrations, and a first electrode for picking up the voltage generated by the deformation of the piezoelectric element is formed and contacted by the support structure, the first contacting element being connected electrically conductively to the support structure outside the first restraining area and the second restraining area.

Abstract: A bending transducer device for generating electrical energy includes at least one elastically deformable support structure, one piezoelectric element, and a bearing device. The piezoelectric element is configured and situated on the support structure in such a way that the piezoelectric element is deformable due to a deformation of the support structure caused by vibration, and the support structure is supported vibration-capably in at least one bearing of the bearing device, the bearing being configured as an articulated receptacle, e.g., a hinge.

Abstract: A tire sensor module having a circuit carrier, on or in which at least one sensor element is attached for measuring a measured variable, an antenna for transmitting sensor signals to a receiving unit of the vehicle, and a housing, in whose housing inner chamber the circuit carrier is received, the antenna being provided in the housing material of the housing or on a housing side of the housing.

Abstract: A method for detecting the state of a vehicle tire and/or a roadway, in which at least one sensor, in particular an acceleration sensor, disposed in the tire interior generates a signal that is assigned to physical variables of the vehicle tire and/or the roadway. A tire state and/or characteristics of the roadway are/is determined on the basis of the signal.

Abstract: In a method for manufacturing a semiconductor component having a semiconductor substrate, a flat, porous diaphragm layer and a cavity underneath the porous diaphragm layer are produced to form unsupported structures for a component. In a first approach, the semiconductor substrate may receive a doping in the diaphragm region that is different from that of the cavity. This permits different pore sizes and/or porosities to be produced, which is used in producing the cavity for improved etching gas transport. Also, mesopores may be produced in the diaphragm region and nanopores may be produced as an auxiliary structure in what is to become the cavity region.

Abstract: In a method for manufacturing a semiconductor component having a semiconductor substrate, a flat, porous diaphragm layer and a cavity underneath the porous diaphragm layer are produced to form unsupported structures for a component. In a first approach, the semiconductor substrate may receive a doping in the diaphragm region that is different from that of the cavity. This permits different pore sizes and/or porosities to be produced, which is used in producing the cavity for improved etching gas transport. Also, mesopores may be produced in the diaphragm region and nanopores may be produced as an auxiliary structure in what is to become the cavity region.

Abstract: A component having a surface micromechanical structure containing both movable elements and immovable elements, and a method of manufacturing same are described. The surface micromechanical structure of the component is produced in a functional layer, which is connected to a substrate via at least one electrically non-conductive first insulation layer and at least one first sacrificial layer. The movable elements of the surface micromechanical structure are exposed by removing the first sacrificial layer. The first insulation layer is made of a material which is not substantially attacked by the process of removing the first sacrificial layer. Thus the removal of the sacrificial layer may be limited in a design-controlled manner. At the same time, a reliable electrical insulation of the surface micromechanical structure with respect to the substrate of the component and a reliable mechanical fastening of the immovable elements of the surface micromechanical structure to the substrate are ensured.

Abstract: A method for producing a component having a semiconductor substrate, in which porous semiconductor material is generated for the purpose of developing at least one thermally decoupled pattern. In the material that has been rendered porous, a recess or a plurality of recesses is/are etched to produce at least one region that is defined by the one recess or the plurality of recesses and is thermally decoupled. On the at least one region, the pattern to be thermally decoupled is then formed.

Abstract: A flow sensor is described, in particular for analysis of gas flows, having a substrate and at least one sensor component which is sensitive to a flow of a medium, the sensor component being separated from the substrate in at least some areas by a region that is a poor heat conductor compared to the substrate. In addition, the region having poor heat conductivity is a porous silicon region or a porous silicon oxide region, or the region having poor heat conductivity is a recess in the surface of the substrate above which the sensor element (15) is situated on at least one web which bridges the recess and is at least mostly unsupported. The flow sensor described here is particularly suitable for angle-dependent detection of a gas flow.

Abstract: A method for producing a thermoelement, in which a first and a second undoped thermoleg are generated on the surface of a substrate, a first resist mask is applied in such a way that the first thermoleg is not covered by it and the second thermoleg is covered by it, doping of the first thermoleg takes place, an at least partial removal of the first resist mask takes place, so that at least the second thermoleg is no longer covered by it, a second resist mask is applied in such a way that the first thermoleg is covered by it and the second thermoleg is not covered by it, doping of the second thermoleg takes place, an at least partial removal of the second resist mask takes place, so that at least the first thermoleg is no longer covered by it, and a connection of the first and the second thermoleg takes place by an electrically conductive material, what is involved being in the doping of the first thermoleg, an n-doping, and in the doping of the second thermoleg, a p-doping, or in the doping of the first therm

Abstract: A method of manufacturing a component, in particular a thermal sensor, and a thermal sensor. The component has at least two regions having different heat conductivities, a surface region being created in a substrate and the heat conductivity of the surface region being lower than that of the surrounding substrate. For producing a flat topography on the component a layer is created which covers the surface region. The layer and the surface region have at least approximately similar physical properties.

Abstract: A micromechanical component includes a substrate and a cover layer deposited on the substrate, underneath the cover layer, a region of porous material being provided which mechanically supports and thermally insulates the cover layer. On the cover layer, a heating device is provided to heat the cover layer above the region; and above the region, a detector is provided to measure an electric property of a heated medium provided above the region on the cover layer.

Abstract: A micropatterned thermosensor, e.g., an infrared sensor, includes a supporting body and at least one thermocouple arranged thereon. The thermocouple also has a first material and a second material, which together form, at least in a pointwise manner, at least one thermal contact. Furthermore, it is provided that the first and/or the second material are configured at least regionally in the form of a meander-shaped or undulating-type circuit trace and extend on the supporting body. In addition, a micropatterned thermosensor having such patterned circuit traces, in which the first material is platinum or aluminum, and the second material is doped or undoped polysilicon-germanium.