Abstract: In a method for manufacturing a semiconductor component having a semiconductor substrate, a flat, porous diaphragm layer and a cavity underneath the porous diaphragm layer are produced to form unsupported structures for a component. In a first approach, the semiconductor substrate may receive a doping in the diaphragm region that is different from that of the cavity. This permits different pore sizes and/or porosities to be produced, which is used in producing the cavity for improved etching gas transport. Also, mesopores may be produced in the diaphragm region and nanopores may be produced as an auxiliary structure in what is to become the cavity region.

Abstract: A temperature sensor having sturdy construction is simple to install and to package, is uncomplicated to manufacture, and suitable for reliably detecting rapid temperature changes. The temperature sensor (1) includes a silicon substrate (2) in which at least one porous area (3) is formed, the degree of porosity and the thickness of the porous area (3) being chosen so that the porous area (3) is thermally isolated from the silicon substrate (2). In addition, the temperature sensor (1) includes temperature measuring elements (6, 7) for detecting the temperature difference between the silicon substrate (2) and the porous area (3). The temperature sensor may also include heating elements for testing the sensor function.

Abstract: In a method for producing a diaphragm sensor unit having a semiconductor material substrate, a flat diaphragm and an insulating well for thermal insulation below the diaphragm are generated, for the formation of sensor element structures for at least one sensor. The substrate, made of semiconductor material, in a specified region, which defines sensor element structures, receives a deliberately different doping from the surrounding semiconductor material, that porous semiconductor material is generated from semiconductor material sections between the regions distinguished by doping, and semiconductor material in the well region under semiconductor is rendered porous and under parts of the sensor element structure is removed and/or rendered porous.

Abstract: A method of reducing the thickness of a silicon substrate made superficially porous in particular in certain areas on one side. A back of the silicon substrate facing a porous front is made porous over the entire area and the produced porous material is subsequently removed in such a way that the remaining thickness of the substrate, at least in the area where the porous material has been removed from the back, corresponds to a predetermined reduced thickness compared to the original thickness of the substrate. The proposed method is particularly suited for the manufacture of a thermally operating sensor on the basis of technology using porous silicon, of a temperature sensor, a mass flow sensor, an air quality sensor, or a gas sensor.

Abstract: A component having a surface micromechanical structure containing both movable elements and immovable elements, and a method of manufacturing same are described. The surface micromechanical structure of the component is produced in a functional layer, which is connected to a substrate via at least one electrically non-conductive first insulation layer and at least one first sacrificial layer. The movable elements of the surface micromechanical structure are exposed by removing the first sacrificial layer. The first insulation layer is made of a material which is not substantially attacked by the process of removing the first sacrificial layer. Thus the removal of the sacrificial layer may be limited in a design-controlled manner. At the same time, a reliable electrical insulation of the surface micromechanical structure with respect to the substrate of the component and a reliable mechanical fastening of the immovable elements of the surface micromechanical structure to the substrate are ensured.

Abstract: A flow sensor (5) is described, in particular for analysis of gas flows, having a substrate (10) and at least one sensor component (15) which is sensitive to a flow of a medium, the sensor component (15) being separated from the substrate (10) in at least some areas by a region that is a poor heat conductor compared to the substrate (10). In addition, the region (11, 11′, 14) having poor heat conductivity is a porous silicon region (11) or a porous silicon oxide region (11′), or the region (11, 11′, 14) having poor heat conductivity is a recess (14) in the surface of the substrate (10) above which the sensor element (15) is situated on at least one web (13) which bridges the recess (14) and is at least mostly unsupported. The flow sensor (5) described here is particularly suitable for angle-dependent detection of a gas flow.

Abstract: A method of manufacturing a component, in particular a thermal sensor, and a thermal sensor. The component has at least two regions having different heat conductivities, a surface region being created in a substrate and the heat conductivity of the surface region being lower than that of the surrounding substrate. For producing a flat topography on the component a layer is created which covers the surface region. The layer and the surface region have at least approximately similar physical properties.

Abstract: A micromechanical component is proposed having a substrate (10) and a cover layer (40) deposited on the substrate (10), underneath the cover layer (40), a region (30; 30′) of porous material being provided which mechanically supports and thermally insulates the cover layer (40). On the cover layer (40), a heating device (70) is provided to heat the cover layer (40) above the region (30; 30′); and above the region (30; 30′), a detector (200, 200′) is provided to measure an electric property of a heated medium (150) provided above the region (30; 30′) on the cover layer (40).

Abstract: A method of reducing the thickness of a silicon substrate made superficially porous in particular in certain areas on one side. A back of the silicon substrate facing a porous front is made porous over the entire area and the produced porous material is subsequently removed in such a way that the remaining thickness of the substrate, at least in the area where the porous material has been removed from the back, corresponds to a predetermined reduced thickness compared to the original thickness of the substrate. The proposed method is particularly suited for the manufacture of a thermally operating sensor on the basis of technology using porous silicon, of a temperature sensor, a mass flow sensor, an air quality sensor, or a gas sensor.

Abstract: An integrated detonation element or firing element including a base member, e.g., a silicon member, and a reaction region associated therewith, is provided. The reaction region includes porous silicon and an oxidizing agent for silicon. An arrangement is provided with which a chemical reaction is initiated between the oxidizing agent and the porous silicon. The detonation or firing element is suitable principally for use in a microreactor; in a microbooster, e.g., for course correction of satellites; as a firing element in a gas generator for a belt tensioner or an airbag, e.g., in motor vehicles; or as a primer for the ignition of explosive charges.

Abstract: In a method for producing a diaphragm sensor unit having a semiconductor material substrate, a flat diaphragm and an insulating well for thermal insulation below the diaphragm are generated, for the formation of sensor element structures for at least one sensor. The substrate, made of semiconductor material, in a specified region, which defines sensor element structures, receives a deliberately different doping from the surrounding semiconductor material, that porous semiconductor material is generated from semiconductor material sections between the regions distinguished by doping, and semiconductor material in the well region under semiconductor is rendered porous and under parts of the sensor element structure is removed and/or rendered porous.

Abstract: In a method for producing a diaphragm sensor unit having a semiconductor material substrate, a flat diaphragm and an insulating well for thermal insulation below the diaphragm are generated, for the formation of sensor element structures for at least one sensor. The substrate, made of semiconductor material, in a specified region, which defines sensor element structures, receives a deliberately different doping from the surrounding semiconductor material, that porous semiconductor material is generated from semiconductor material sections between the regions distinguished by doping, and semiconductor material in the well region under semiconductor is rendered porous and under parts of the sensor element structure is removed and/or rendered porous.

Abstract: In a method for producing a diaphragm sensor unit having a semiconductor material substrate, a flat diaphragm and an insulating well for thermal insulation below the diaphragm are generated, for the formation of sensor element structures for at least one sensor. The substrate, made of semiconductor material, in a specified region, which defines sensor element structures, receives a deliberately different doping from the surrounding semiconductor material, that porous semiconductor material is generated from semiconductor material sections between the regions distinguished by doping, and semiconductor material in the well region under semiconductor is rendered porous and under parts of the sensor element structure is removed and/or rendered porous.

Abstract: In a method for producing a diaphragm sensor array having a semiconductor material substrate on which a plurality of planar diaphragm regions is arranged as a carrier layer for sensor elements, the planar diaphragm regions are thermally decoupled from one another by crosspieces made of a material having clearly better heat conductive properties compared to the diaphragm regions and the lateral surroundings of the crosspieces. Masking for a subsequent step for producing porous semiconductor material is applied at the locations of the semiconductor material substrate at which the crosspieces for the thermal decoupling are formed, and the semiconductor regions not protected by the masking are rendered porous and the diaphragm regions are produced thereupon. Instead of using porous silicon, a plasma etching process may be performed from the backside of a semiconductor material substrate. In particular, high integration densities of diaphragm sensors may be achieved with both methods.

Abstract: A micropatterned thermosensor (5), in particular an infrared sensor, is proposed, having a supporting body (12) and at least one thermocouple (20) arranged thereon. The thermocouple (20) also has a first material (13) and a second material (14), which together form, at least in a pointwise manner, at least one thermal contact (10, 11). Furthermore, it is provided that the first and/or the second material (13, 14) are configured at least regionally in the form of a meander-shaped or undulating-type circuit trace (15, 16) and run on the supporting body (12). In addition, a micropatterned thermosensor (5) is proposed, preferably also having such patterned circuit traces (15, 16), in which the first material (13) is platinum or aluminum, and the second material (14) is doped or undoped polysilicon-germanium.