Patents by Inventor Tian-An Chen

Tian-An Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20040192172
    Abstract: An oxidizing slurry for removal of low dielectric constant materials. The slurry is formed utilizing non-oxidizing particles with a separate oxidizing agent, oxidizing particles alone or reducible abrasive particles with a compatible oxidizing agent. The particles can be formed of a metal oxide, nitride, or carbide material, by itself or mixtures thereof, or can be coated on a core material such as silicon dioxide or can be coformed therewith. A preferred oxidizing slurry is multi-modal in particle size distribution. Although developed for utilization in CMP semiconductor processing the oxidizing slurry of the present invention also can be utilized for other high precision polishing processes.
    Type: Application
    Filed: June 9, 2003
    Publication date: September 30, 2004
    Inventors: Dan Towery, Neil H. Hendricks, Paul E. Schilling, Tian-An Chen
  • Patent number: 6794761
    Abstract: A siloxirane based no-flow underfill material is provided. The material has a low coefficient of thermal expansion, low moisture uptake and a high distortion temperature. The material typically includes at least an epoxy siloxiane resin, a cross-linking hardener, a catalyst, and a fluxing agent.
    Type: Grant
    Filed: April 26, 2001
    Date of Patent: September 21, 2004
    Assignee: Intel Corporation
    Inventors: Song-Hua Shi, Tian-An Chen
  • Patent number: 6780517
    Abstract: The adhesion of low k poly(arylene ether) dielectric coating compositions is effectively enhanced by a polycarbosilane promoter additive or primer. A coating composition is prepared by (a) providing a poly(arylene ether) composition; and (b) adding to said composition a small effective adhesion promoting amount of certain polycarbosilanes. The adhesion enhanced coating compositions are cured by heat treatment at temperatures in excess of 50° C. to form a polycarbosilane-modified poly(arylene ether) polymer composition having a low k dielectric constant for use in semiconductor devices.
    Type: Grant
    Filed: June 4, 2002
    Date of Patent: August 24, 2004
    Assignee: Honeywell International Inc.
    Inventors: Tian-An Chen, Anna M. George, Kreistler S. Y. Lau, Hui-Jung Wu
  • Publication number: 20040145030
    Abstract: A semiconductor structure may be covered with a thermally decomposing film. That film may then be covered by a sealing cover. Subsequently, the thermally decomposing material may be decomposed, forming a cavity.
    Type: Application
    Filed: January 28, 2003
    Publication date: July 29, 2004
    Inventors: Robert P. Meagley, Kevin P. O'Brien, Tian-An Chen, Michael D. Goodner, James Powers, Huey-Chiang Liou
  • Patent number: 6761975
    Abstract: The adhesion of low k poly(arylene ether) dielectric coating compositions is effectively enhanced by a polycarbosilane promoter additive or primer. A coating composition is prepared by (a) providing a poly(arylene ether) composition; and (b) adding to said composition a small effective adhesion promoting amount of certain polycarbosilanes. The adhesion enhanced coating compositions are cured by heat treatment at temperatures in excess of 50° C. to form a polycarbosilane-modified poly(arylene ether) polymer composition having a low k dielectric constant for use in semiconductor devices.
    Type: Grant
    Filed: December 23, 1999
    Date of Patent: July 13, 2004
    Assignee: Honeywell International Inc.
    Inventors: Tian-An Chen, Anna M. George, Kreistler S. Y. Lau, Hui-Jung Wu
  • Publication number: 20040130031
    Abstract: Carborane may be used as a precursor to form low dielectric constant dielectrics. The carborane material may be modified to enable it to be deposited by chemical vapor deposition.
    Type: Application
    Filed: January 7, 2003
    Publication date: July 8, 2004
    Inventors: Tian-An Chen, Robert Meagley, Kevin P. O'Brien, Michael D. Goodner, James Powers
  • Publication number: 20040124495
    Abstract: A method for implementing a bismaleimide (BMI) polymer as a sacrificial material for an integrated circuit air gap dielectric. The method of one embodiment comprises forming a first and second metal interconnect lines on a substrate, wherein at least a portion of the first and second metal interconnect lines extend parallel to one another and wherein a trough is located between the parallel portion of said first and second metal interconnect lines. A layer of bismaleimide is spin coated over the substrate. The layer of bismaleimide is polished with a chemical mechanical polish, wherein the trough remains filled with the bismaleimide. A diffusion layer is formed over the substrate. The substrate is heated to activate a pyrolysis of the bismaleimide. An air gap is formed in the trough in the space vacated by the bismaleimide.
    Type: Application
    Filed: December 26, 2002
    Publication date: July 1, 2004
    Inventors: Tian-An Chen, Kevin P. O'Brien
  • Publication number: 20040115408
    Abstract: A method for low temperature bumping is disclosed. A resin capable of being cross-linked by free-radical or cationic polymerization at low temperature is provided. Electrically conductive particles are then added to the resin to form a mixture. The mixture is then activated by heat or exposure to light to polymerize the mixture. In an alternative embodiment, a vinyl ether resin is used, to which electrically conductive particles are added. The mixture is polymerized by exposure to light.
    Type: Application
    Filed: December 17, 2002
    Publication date: June 17, 2004
    Applicant: Intel Corporation
    Inventors: Terry Lee Sterrett, Tian An Chen, Saikumar Jayaraman
  • Patent number: 6730542
    Abstract: A polybenzoxazine based wafer-level underfill material. The material may be provided to a surface of a semiconductor wafer. The semiconductor wafer may then be sawed into individual chips. The polybenzoxazine based underfill material may be for use between a chip and a package substrate.
    Type: Grant
    Filed: January 10, 2003
    Date of Patent: May 4, 2004
    Assignee: Intel Corporation
    Inventors: Lejun Wang, Song-Hua Shi, Tian-An Chen
  • Publication number: 20040082107
    Abstract: A system for underfilling in a chip package includes an underfill mixture that ameliorates the CTE mismatch that typically exists between a packaged die and a resin-impregnated fiberglass mounting substrate. In one embodiment, the system includes an underfill mixture that alone exhibits a CTE that is characteristic of an inorganic-filled underfill composite previously known. An embodiment is also directed to the assembly of a flip-chip package that uses an underfill mixture.
    Type: Application
    Filed: October 28, 2002
    Publication date: April 29, 2004
    Applicant: Intel Corporation
    Inventors: Song-Hua Shi, Tian-An Chen
  • Patent number: 6727594
    Abstract: A polybenzoxazine based wafer-level underfill material. The material may be provided to a surface of a semiconductor wafer. The semiconductor wafer may then be sawed into individual chips. The polybenzoxazine based underfill material may be for use between a chip and a package substrate.
    Type: Grant
    Filed: January 2, 2002
    Date of Patent: April 27, 2004
    Assignee: Intel Corporation
    Inventors: Lejun Wang, Song-Hua Shi, Tian-An Chen
  • Publication number: 20030190477
    Abstract: Microelectronic and optoelectronic packaging embodiments are described with underfill materials including polybenzoxazine, having the general formula: 1
    Type: Application
    Filed: March 22, 2002
    Publication date: October 9, 2003
    Inventors: Song-Hua Shi, Lejun Wang, Tian-An Chen
  • Patent number: 6610114
    Abstract: An oxidizing slurry for removal of low dielectric constant materials. The slurry is formed utilizing non-oxidizing particles with a separate oxidizing agent, oxidizing particles alone or reducible abrasive particles with a compatible oxidizing agent. The particles can be formed of a metal oxide, nitride, or carbide material, by itself or mixtures thereof, or can be coated on a core material such as silicon dioxide or can be coformed therewith. A preferred oxidizing slurry is multi-modal in particle size distribution. Although developed for utilization in CMP semiconductor processing the oxidizing slurry of the present invention also can be utilized for other high precision polishing processes.
    Type: Grant
    Filed: June 14, 2001
    Date of Patent: August 26, 2003
    Assignee: Honeywell International Inc.
    Inventors: Dan Towery, Neil Hendricks, Paul Schilling, Tian-An Chen
  • Publication number: 20030137043
    Abstract: A polybenzoxazine based wafer-level underfill material. The material may be provided to a surface of a semiconductor wafer. The semiconductor wafer may then be sawed into individual chips. The polybenzoxazine based underfill material may be for use between a chip and a package substrate.
    Type: Application
    Filed: January 10, 2003
    Publication date: July 24, 2003
    Inventors: Lejun Wang, Song-Hua Shi, Tian-An Chen
  • Publication number: 20030122241
    Abstract: A polybenzoxazine based wafer-level underfill material. The material may be provided to a surface of a semiconductor wafer. The semiconductor wafer may then be sawed into individual chips. The polybenzoxazine based underfill material may be for use between a chip and a package substrate.
    Type: Application
    Filed: January 2, 2002
    Publication date: July 3, 2003
    Inventors: Lejun Wang, Song-Hua Shi, Tian-An Chen
  • Publication number: 20020198353
    Abstract: The adhesion of low k poly(arylene ether) dielectric coating compositions is effectively enhanced by a polycarbosilane promoter additive or primer. A coating composition is prepared by (a) providing a poly(arylene ether) composition; and (b) adding to said composition a small effective adhesion promoting amount of certain polycarbosilanes. The adhesion enhanced coating compositions are cured by heat treatment at temperatures in excess of 50° C. to form a polycarbosilane-modified poly(arylene ether) polymer composition having a low k dielectric constant for use in semiconductor devices.
    Type: Application
    Filed: June 4, 2002
    Publication date: December 26, 2002
    Applicant: Honeywell International Inc.
    Inventors: Tian-An Chen, Anna M. George, Kreistler S. Y. Lau, Hui-Jung Wu
  • Publication number: 20020190370
    Abstract: A siloxirane based no-flow underfill material is provided. The material has a low coefficient of thermal expansion, low moisture uptake and a high distortion temperature. The material typically includes at least an epoxy siloxiane resin, a cross-linking hardener, a catalyst, and a fluxing agent.
    Type: Application
    Filed: April 26, 2001
    Publication date: December 19, 2002
    Inventors: Song-Hua Shi, Tian-An Chen
  • Patent number: 6380347
    Abstract: Compositions and methods are provided in which an electrical device is fabricated by incorporating macrocycles in a polymer on a substrate portion of the device, and crosslinking the polymer to form a crosslinked polymer. It is preferred that at least some of the macrocycles are relatively large, including at least six rings in the backbone of a macrocycle. It is also preferred that rings used in forming the macrocycles may be relatively large, preferably having at least six members as in phenyl rings. The intermacrocyclic links can be relatively complex, such as where four macrocycles may be coupled to a single atom or a single phenyl group. In yet other aspects, macrocycles can be heavily conjugated, with more preferred macrocycles having a completely conjugated backbone. In yet other aspects the macrocycles can have backbones with ether, carboxyl, and ethynyl groups, some of which can be used in crosslinking without reliance on an extrinsic crosslinker.
    Type: Grant
    Filed: April 6, 2000
    Date of Patent: April 30, 2002
    Assignee: Honeywell International Inc.
    Inventors: Kreisler Lau, Tian-An Chen, Boris Korolev
  • Publication number: 20020009955
    Abstract: An oxidizing slurry for removal of low dielectric constant materials. The slurry is formed utilizing non-oxidizing particles with a separate oxidizing agent, oxidizing particles alone or reducible abrasive particles with a compatible oxidizing agent. The particles can be formed of a metal oxide, nitride, or carbide material, by itself or mixtures thereof, or can be coated on a core material such as silicon dioxide or can be coformed therewith. A preferred oxidizing slurry is multi-modal in particle size distribution. Although developed for utilization in CMP semiconductor processing the oxidizing slurry of the present invention also can be utilized for other high precision polishing processes.
    Type: Application
    Filed: June 14, 2001
    Publication date: January 24, 2002
    Inventors: Daniel L. Towery, Neil H. Hendricks, Paul E. Schilling, Tian-An Chen
  • Patent number: 6313185
    Abstract: Nanoporous materials are fabricated from polymers having backbones with reactive groups used in crosslinking. In one aspect of preferred methods and compositions, the reactive groups in the backbone comprise a diene and a dienophile. The diene may advantageously comprise a tetracyclone, and the dienophile may advantageously comprise an ethynyl. In another aspect of preferred methods and compositions, the reactive groups in the backbone are included in a conjugated system. Especially preferred polymeric strands comprise a poly(arylene ether) synthesized from a difluoroaromatic portion and an aromatic bisphenolic portion. It is still more preferred that the difluoroaromatic portions of the poly(arylene ether) are modified in such a way that some difluoroaromatic portions carry a thermolabile portion. In still other aspects crosslinking may advantageously occur without reliance on an exogenous crosslinker.
    Type: Grant
    Filed: September 24, 1998
    Date of Patent: November 6, 2001
    Assignee: Honeywell International Inc.
    Inventors: Kreisler Lau, Tian-An Chen, Roger Leung