Abstract: A thin film circuit includes a thin film transistor with a metal oxide semiconductor channel having a conduction band minimum (CBM) with a first energy level. The transistor further includes a layer of passivation material covering at least a portion of the metal oxide semiconductor channel. The passivation material has a conduction band minimum (CBM) with a second energy level. The second energy level being lower than, equal to, or no more than 0.5 eV above the first energy level. The circuit is used for an electronic device including any one of an AMLCD, AMOLED, AMLED, AMEPD.

Abstract: A method including providing a substrate with a gate, a layer of gate insulator material adjacent the gate, and a layer of metal oxide semiconductor material positioned on the gate insulator opposite the gate, forming a selectively patterned etch stop passivation layer and heating at elevated temperature in an oxygen-containing or nitrogen-containing or inert ambience to selectively increase the carrier concentration in regions of the metal oxide semiconductor not covered by the etch stop layer, on which overlying and spaced apart source/drain metals are formed. Subsequently heating the transistor in an oxygen-containing or nitrogen-containing or inert ambience to further improve the source/drain contacts and adjust the threshold voltage to a desired level. Providing additional passivation layer(s) on top of the transistor with electric insulation and barrier property to moisture and chemicals in the surrounding environment.

Abstract: A method of fabricating a high mobility semiconductor metal oxide thin film transistor including the steps of depositing a layer of semiconductor metal oxide material, depositing a blanket layer of etch-stop material on the layer of MO material, and patterning a layer of source/drain metal on the blanket layer of etch-stop material including etching the layer of source/drain metal into source/drain terminals positioned to define a channel area in the semiconductor metal oxide layer. The etch-stop material being electrically conductive in a direction perpendicular to the plane of the blanket layer at least under the source/drain terminals to provide electrical contact between each of the source/drain terminals and the layer of semiconductor metal oxide material. The etch-stop material is also chemical robust to protect the layer of semiconductor metal oxide channel material during the etching process.

Abstract: A method including providing a substrate with a gate, a layer of gate insulator material adjacent the gate, and a layer of metal oxide semiconductor material positioned on the gate insulator opposite the gate, forming a selectively patterned etch stop passivation layer and heating at elevated temperature in an oxygen-containing or nitrogen-containing or inert ambience to selectively increase the carrier concentration in regions of the metal oxide semiconductor not covered by the etch stop layer, on which overlying and spaced apart source/drain metals are formed. Subsequently heating the transistor in an oxygen-containing or nitrogen-containing or inert ambience to further improve the source/drain contacts and adjust the threshold voltage to a desired level. Providing additional passivation layer(s) on top of the transistor with electric insulation and barrier property to moisture and chemicals in the surrounding environment.

Abstract: A method of fabricating a stable, high mobility metal oxide thin film transistor includes the steps of providing a substrate, positioning a gate on the substrate, and depositing a gate dielectric layer on the gate and portions of the substrate not covered by the gate. A multiple film active layer including a metal oxide semiconductor film and a metal oxide passivation film is deposited on the gate dielectric with the passivation film positioned in overlying relationship to the semiconductor film. An etch-stop layer is positioned on a surface of the passivation film and defines a channel area in the active layer. A portion of the multiple film active layer on opposite sides of the etch-stop layer is modified to form an ohmic contact and metal source/drain contacts are positioned on the modified portion of the multiple film active layer.

Abstract: A method including providing a substrate with a gate, a layer of gate insulator material adjacent the gate, and a layer of metal oxide semiconductor material positioned on the gate insulator opposite the gate, forming a selectively patterned etch stop passivation layer and heating at elevated temperature in an oxygen-containing or nitrogen-containing or inert ambience to selectively increase the carrier concentration in regions of the metal oxide semiconductor not covered by the etch stop layer, on which overlying and spaced apart source/drain metals are formed. Subsequently heating the transistor in an oxygen-containing or nitrogen-containing or inert ambience to further improve the source/drain contacts and adjust the threshold voltage to a desired level. Providing additional passivation layer(s) on top of the transistor with electric insulation and barrier property to moisture and chemicals in the surrounding environment.

Abstract: A method of fabricating a stable, high mobility metal oxide thin film transistor includes the steps of providing a substrate, positioning a gate on the substrate, and depositing a gate dielectric layer on the gate and portions of the substrate not covered by the gate. A multiple film active layer including a metal oxide semiconductor film and a metal oxide passivation film is deposited on the gate dielectric with the passivation film positioned in overlying relationship to the semiconductor film. An etch-stop layer is positioned on a surface of the passivation film and defines a channel area in the active layer. A portion of the multiple film active layer on opposite sides of the etch-stop layer is modified to form an ohmic contact and metal source/drain contacts are positioned on the modified portion of the multiple film active layer.

Abstract: A method of fabricating a high mobility semiconductor metal oxide thin film transistor including the steps of depositing a layer of semiconductor metal oxide material, depositing a blanket layer of etch-stop material on the layer of MO material, and patterning a layer of source/drain metal on the blanket layer of etch-stop material including etching the layer of source/drain metal into source/drain terminals positioned to define a channel area in the semiconductor metal oxide layer. The etch-stop material being electrically conductive in a direction perpendicular to the plane of the blanket layer at least under the source/drain terminals to provide electrical contact between each of the source/drain terminals and the layer of semiconductor metal oxide material. The etch-stop material is also chemical robust to protect the layer of semiconductor metal oxide channel material during the etching process.

Abstract: A method including providing a substrate with a gate, a layer of gate insulator material adjacent the gate, and a layer of metal oxide semiconductor material positioned on the gate insulator opposite the gate, forming a selectively patterned etch stop passivation layer and heating at elevated temperature in an oxygen-containing or nitrogen-containing or inert ambience to selectively increase the carrier concentration in regions of the metal oxide semiconductor not covered by the etch stop layer, on which overlying and spaced apart source/drain metals are formed. Subsequently heating the transistor in an oxygen-containing or nitrogen-containing or inert ambience to further improve the source/drain contacts and adjust the threshold voltage to a desired level. Providing additional passivation layer(s) on top of the transistor with electric insulation and barrier property to moisture and chemicals in the surrounding environment.

Abstract: A thin film semiconductor device has a semiconductor layer including a composite/blend/mixture of an amorphous/nanocrystalline semiconductor ionic metal oxide and an amorphous/nanocrystalline non-semiconducting covalent metal oxide. A pair of terminals is positioned in communication with the semiconductor layer and define a semiconductive channel, and agate terminal is positioned in communication with the semiconductive channel and further positioned to control conduction of the channel. The invention further includes a method of depositing the mixture including using nitrogen during the deposition process to control the carrier concentration in the resulting semiconductor layer.

Abstract: Disclosed are an electroluminescent element, a display device and a method for preparing the electroluminescent element. The electroluminescent element comprises a substrate (101) and an anode layer (102), a light-emitting layer (103) and a cathode layer (104) that are disposed in sequence on the substrate (101). At least one insertion layer (105) for adjusting electron mobility is disposed within the light-emitting layer (103). By disposing an insertion layer (105) in the light-emitting layer (103), the effect of a voltage on the recombination of electrons and holes in the light-emitting layer (103) can be reduced, the level of the recombination of carriers such as electrons and holes in the light-emitting layer (103) can be increased, and the ratio of electrons and holes that are combined can be increased.

Abstract: A thin film circuit includes a thin film transistor with a metal oxide semiconductor channel having a conduction band minimum (CBM) with a first energy level. The transistor further includes a layer of passivation material covering at least a portion of the metal oxide semiconductor channel. The passivation material has a conduction band minimum (CBM) with a second energy level. The second energy level being lower than, equal to, or no more than 0.5 eV above the first energy level. The circuit is used for an electronic device including any one of an AMLCD, AMOLED, AMLED, AMEPD.

Abstract: Disclosed is an organic light-emitting device comprising a substrate (1), an anode layer (2), a cathode layer (10) and an organic functional layer comprising a light-emitting layer (6); the light-emitting layer (6) comprises three successive light-emitting sub-layers, i.e., a first light-emitting sub-layer (61) close to the anode layer, a second light-emitting sub-layer (62), and a third light-emitting sub-layer (63) close to the cathode layer. This organic light-emitting device can effectively improve the carrier utilization ratio and thereby improving the light-emitting efficiency of the organic light-emitting device.

Abstract: A method of fabricating a high mobility semiconductor metal oxide thin film transistor including the steps of depositing a layer of semiconductor metal oxide material, depositing a blanket layer of etch-stop material on the layer of MO material, and patterning a layer of source/drain metal on the blanket layer of etch-stop material including etching the layer of source/drain metal into source/drain terminals positioned to define a channel area in the semiconductor metal oxide layer. The etch-stop material being electrically conductive in a direction perpendicular to the plane of the blanket layer at least under the source/drain terminals to provide electrical contact between each of the source/drain terminals and the layer of semiconductor metal oxide material. The etch-stop material is also chemical robust to protect the layer of semiconductor metal oxide channel material during the etching process.

Abstract: The present disclosure discloses a pixel unit circuit and an OLED display apparatus. The pixel unit circuit comprises a first sub-circuit module, a second sub-circuit module, a first capacitor and OLED. An input of the first sub-circuit module is connected to a data line; another input of the first sub-circuit module is connected to an output of the second sub-circuit module and a first terminal of the OLED; an output of the first sub-circuit module is connected to an input/output of the second sub-circuit module via the first capacitor; a voltage difference between positive power supply and negative power supply of a backboard is applied between an input of the second sub-circuit module and a second terminal of the OLED. The pixel unit circuit can compensate the aging of OLED devices, the non-uniformity of threshold voltage of TFT driving transistors, and IR Drop of the power supply of the backboard.

Abstract: Disclosed is an organic light-emitting device comprising a substrate (1), an anode layer (2), a cathode layer (10) and an organic functional layer comprising a light-emitting layer (6); the light-emitting layer (6) comprises three successive light-emitting sub-layers, i.e., a first light-emitting sub-layer (61) close to the anode layer, a second light-emitting sub-layer (62), and a third light-emitting sub-layer (63) close to the cathode layer. This organic light-emitting device can effectively improve the carrier utilization ratio and thereby improving the light-emitting efficiency of the organic light-emitting device.

Abstract: Disclosed are an electroluminescent element, a display device and a method for preparing the electroluminescent element. The electroluminescent element comprises a substrate (101) and an anode layer (102), a light-emitting layer (103) and a cathode layer (104) that are disposed in sequence on the substrate (101). At least one insertion layer (105) for adjusting electron mobility is disposed within the light-emitting layer (103). By disposing an insertion layer (105) in the light-emitting layer (103), the effect of a voltage on the recombination of electrons and holes in the light-emitting layer (103) can be reduced, the level of the recombination of carriers such as electrons and holes in the light-emitting layer (103) can be increased, and the ratio of electrons and holes that are combined can be increased.

Abstract: A method of fabricating a stable, high mobility metal oxide thin film transistor includes the steps of providing a substrate, positioning a gate on the substrate, and depositing a gate dielectric layer on the gate and portions of the substrate not covered by the gate. A multiple film active layer including a metal oxide semiconductor film and a metal oxide passivation film is deposited on the gate dielectric with the passivation film positioned in overlying relationship to the semiconductor film. An etch-stop layer is positioned on a surface of the passivation film and defines a channel area in the active layer. A portion of the multiple film active layer on opposite sides of the etch-stop layer is modified to form an ohmic contact and metal source/drain contacts are positioned on the modified portion of the multiple film active layer.

Abstract: The present invention discloses an OLED panel for improving the hysteresis effect of TFT without increasing the area of the pixel circuit and at the same time ensuring the opening ratio. Said OLED panel includes a substrate and a pixel unit array formed thereon, the pixel unit array comprises a plurality of pixel units defined by the intersections of scanning lines and data lines, and each unit includes a driving TFT and an OLED, and the driving TFT has a source connected to a high voltage signal terminal in a backboard, a drain connected to an anode of the OLED; a plurality of resetting TFTs is arranged in the peripheral area of the pixel unit array on the substrate, and the resetting TFT has a gate connected a pre-controlling signal terminal, a source connected to a resetting signal terminal, and each resetting TFT corresponds to a data line one-to-one.

Abstract: The present disclosure discloses a pixel unit circuit and an OLED display apparatus. The pixel unit circuit comprises a first sub-circuit module, a second sub-circuit module, a first capacitor and OLED. An input of the first sub-circuit module is connected to a data line; another input of the first sub-circuit module is connected to an output of the second sub-circuit module and a first terminal of the OLED; an output of the first sub-circuit module is connected to an input/output of the second sub-circuit module via the first capacitor; a voltage difference between positive power supply and negative power supply of a backboard is applied between an input of the second sub-circuit module and a second terminal of the OLED. The pixel unit circuit can compensate the aging of OLED devices, the non-uniformity of threshold voltage of TFT driving transistors, and IR Drop of the power supply of the backboard.