Patents by Inventor Tianniu Chen
Tianniu Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20130005078Abstract: A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350° C., with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates.Type: ApplicationFiled: September 12, 2012Publication date: January 3, 2013Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: Jeffrey F. Roeder, Thomas H. Baum, Bryan C. Hendrix, Gregory T. Stauf, Chongying Xu, William Hunks, Tianniu Chen, Matthias Stender
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Patent number: 8288198Abstract: A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350° C. with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates.Type: GrantFiled: March 12, 2007Date of Patent: October 16, 2012Assignee: Advanced Technology Materials, Inc.Inventors: Jeffrey F. Roeder, Thomas H. Baum, Bryan C. Hendrix, Gregory T. Stauf, Chongying Xu, William Hunks, Tianniu Chen, Matthias Stender
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Patent number: 8268665Abstract: Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.Type: GrantFiled: June 26, 2011Date of Patent: September 18, 2012Assignee: Advanced Technology Materials, Inc.Inventors: William Hunks, Tianniu Chen, Chongying Xu, Jeffrey F. Roeder, Thomas H. Baum, Matthias Stender, Philip S. H. Chen, Gregory T. Stauf, Bryan C. Hendrix
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Patent number: 8206784Abstract: Barium, strontium, tantalum and lanthanum precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of titanate thin films. The precursors have the formula M(Cp)2, wherein M is strontium, barium, tantalum or lanthanum, and Cp is cyclopentadienyl, of the formula wherein each of R1-R5 is the same as or different from one another, with each being independently selected from among hydrogen, C1-C12 alkyl, C1-C12 amino, C6-C10 aryl, C1-C12 alkoxy, C3-C6 alkylsilyl, C2-C12 alkenyl, R1R2R3NNR3, wherein R1, R2 and R3 may be the same as or different from one another and each is independently selected from hydrogen and C1-C6 alkyl, and pendant ligands including functional group(s) providing further coordination to the metal center M. The precursors of the above formula are useful to achieve uniform coating of high dielectric constant materials in the manufacture of flash memory and other microelectronic devices.Type: GrantFiled: November 16, 2009Date of Patent: June 26, 2012Assignee: Advanced Technology Materials, Inc.Inventors: Chongying Xu, Tianniu Chen, Thomas M. Cameron, Jeffrey F. Roeder, Thomas H. Baum
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Publication number: 20120141675Abstract: Barium, strontium, tantalum and lanthanum precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of titanate thin films. The precursors have the formula M(Cp)2, wherein M is strontium, barium, tantalum or lanthanum, and Cp is cyclopentadienyl, of the formula wherein each of R1-R5 is the same as or different from one another, with each being independently selected from among hydrogen, C1-C12 alkyl, C1-C12 amino, C6-C10 aryl, C1-C12 alkoxy, C3-C6 alkylsilyl, C2-C12 alkenyl, R1R2R3NNR3, wherein R1, R2 and R3 may be the same as or different from one another and each is independently selected from hydrogen and C1-C6 alkyl, and pendant ligands including functional group(s) providing further coordination to the metal center M. The precursors of the above formula are useful to achieve uniform coating of high dielectric constant materials in the manufacture of flash memory and other microelectronic devices.Type: ApplicationFiled: February 9, 2012Publication date: June 7, 2012Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: Chongying Xu, Tianniu Chen, Thomas M. Cameron, Jeffrey F. Roeder, Thomas H. Baum
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Publication number: 20120127629Abstract: A composite dielectric material including an early transition metal or metal oxide base material and a dopant, co-deposited, alloying or layering secondary material, selected from among Nb, Ge, Ta, La, Y, Ce, Pr, Nd, Gd, Dy, Sr, Ba, Ca, and Mg, and oxides of such metals, and alumina as a dopant or alloying secondary material. Such composite dielectric material can be formed by vapor deposition processes, e.g., ALD, using suitable precursors, to form microelectronic devices such as ferroelectric high k capacitors, gate structures, DRAMs, and the like.Type: ApplicationFiled: April 14, 2010Publication date: May 24, 2012Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: Jeffrey F. Roeder, Bryan C. Hendrix, Steven M. Bilodeau, Gregory T. Stauf, Tianniu Chen, Thomas M. Cameron, Chongying Xu
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Publication number: 20120108038Abstract: Germanium, tellurium, and/or antimony precursors are usefully employed to form germanium-, tellurium- and/or antimony-containing films, such as films of GeTe, GST, and thermoelectric germanium-containing films. Processes for using these precursors to form amorphous films are also described. Further described is the use of [{nBuC(iPrN)2}2Ge] or Ge butyl amidinate to form GeTe smooth amorphous films for phase change memory applications.Type: ApplicationFiled: January 9, 2012Publication date: May 3, 2012Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: Philip S.H. Chen, William Hunks, Tianniu Chen, Matthias Stender, Chongying Xu, Jeffrey F. Roeder, Weimin Li
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Patent number: 8168811Abstract: Precursors useful for vapor phase deposition processes, e.g., CVD/ALD, to form metal-containing films on substrates. The precursors include, in one class, a central metal atom M to which is coordinated at least one ligand of formula (I): wherein: R1, R2 and R3 are each independently H or ogano moieties; and G1 is an electron donor arm substituent that increases the coordination of the ligand to the central metal atom M; wherein when G1 is aminoalkyl, the substituents on the amino nitrogen are not alkyl, fluoroalkyl, cycloaliphatic, or aryl, and are not connected to form a ring structure containing carbon, oxygen or nitrogen atoms. Also disclosed are ketoester, malonate and other precursors adapted for forming metal-containing films on substrates, suitable for use in the manufacture of microelectronic device products such as semiconductor devices and flat panel displays.Type: GrantFiled: July 21, 2009Date of Patent: May 1, 2012Assignee: Advanced Technology Materials, Inc.Inventors: Thomas M. Cameron, Chongying Xu, Tianniu Chen
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Publication number: 20120015857Abstract: Compositions and methods of using said composition for removing polymeric materials from surfaces, preferably cleaning contaminant buildup from a lithography apparatus without total disassembly of said apparatus.Type: ApplicationFiled: January 26, 2010Publication date: January 19, 2012Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: Tianniu Chen, Steven Bilodeau, Karl E. Boggs, Ping Jiang, Michael B. Korzenski, George Mirth, Kim Y. Van Berkel
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Patent number: 8093140Abstract: Germanium, tellurium, and/or antimony precursors are usefully employed to form germanium-, tellurium- and/or antimony-containing films, such as films of GeTe, GST, and thermoelectric germanium-containing films. Processes for using these precursors to form amorphous films are also described. Further described is the use of [{nBuC(iPrN)2}2Ge] or Ge butyl amidinate to form GeTe smooth amorphous films for phase change memory applications.Type: GrantFiled: October 31, 2008Date of Patent: January 10, 2012Assignee: Advanced Technology Materials, Inc.Inventors: Philip S. H. Chen, William Hunks, Tianniu Chen, Matthias Stender, Chongying Xu, Jeffrey F. Roeder, Weimin Li
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Patent number: 8053375Abstract: An ultra low k dielectric film, including a silicon film containing porosity deriving from a porogen, as formed from a precursor silane and a porogen, wherein the precursor silane has a water content below 10 ppm, based on total weight of the precursor silane, and/or the porogen has a water content below 10 ppm, based on total weight of the porogen. In one implementation, the precursor silane is diethoxymethylsilane, and the porogen is bicyclo[2.2.1]-hepta-2,5-diene having a trace water content below 10 ppm, based on total weight of said bicyclo[2.2.1]-hepta-2,5-diene. These super-dry reagents are unexpectedly polymerization-resistant during their delivery and deposition in the formation of ultra low k films, and are advantageously employed to produce ultra low k films of superior character.Type: GrantFiled: October 27, 2007Date of Patent: November 8, 2011Assignee: Advanced Technology Materials, Inc.Inventors: Chongying Xu, Jeffrey F. Roeder, Thomas H. Baum, Steven M. Bilodeau, Scott Battle, William Hunks, Tianniu Chen
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Publication number: 20110263100Abstract: Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.Type: ApplicationFiled: June 26, 2011Publication date: October 27, 2011Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: William Hunks, Tianniu Chen, Chongying Xu, Jeffrey F. Roeder, Thomas H. Baum, Matthias Stender, Philip S.H. Chen, Gregory T. Stauf, Bryan C. Hendrix
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Patent number: 8008117Abstract: Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.Type: GrantFiled: August 22, 2010Date of Patent: August 30, 2011Assignee: Advanced Technology Materials, Inc.Inventors: William Hunks, Tianniu Chen, Chongying Xu, Jeffrey F. Roeder, Thomas H. Baum, Melissa A. Petruska, Matthias Stender, Philip S. H. Chen, Gregory T. Stauf, Bryan C. Hendrix
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Patent number: 7964746Abstract: Copper precursors useful for depositing copper or copper-containing films on substrates, e.g., microelectronic device substrates or other surfaces. The precursors includes copper compounds of various classes, including copper borohydrides, copper compounds with cyclopentadienyl-type ligands, copper compounds with cyclopentadienyl-type and isocyanide ligands, and stabilized copper hydrides. The precursors can be utilized in solid or liquid forms that are volatilized to form precursor vapor for contacting with the substrate, to form deposited copper by techniques such as chemical vapor deposition (CVD), atomic layer deposition (ALD) or rapid vapor deposition (digital CVD).Type: GrantFiled: March 30, 2008Date of Patent: June 21, 2011Assignee: Advanced Technology Materials, Inc.Inventors: Tianniu Chen, Chongying Xu, Thomas H. Baum, Bryan C. Hendrix, Jeffrey F. Roeder, Juan E. Dominguez, Adrien R. Lavoie, Harsono S. Simka
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Publication number: 20110111556Abstract: Precursors for use in depositing antimony-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of A Ge2Sb2Te5 chalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM) or for the manufacturing of thermoelectric devices, by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).Type: ApplicationFiled: April 30, 2009Publication date: May 12, 2011Applicant: Advanced Technology Materials, Inc.Inventors: Tianniu Chen, William Hunks, Philip S.H. Chen, Chongying Xu, Leah Maylott
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Publication number: 20110060165Abstract: Metal aminotroponiminates, metal bis-oxazolinates and metal guanidinates are described, as well as ligand precursors of such compounds, and mixed ligand barium and strontium complexes suitable for chemical vapor deposition, atomic layer deposition, and rapid vapor deposition processes. Such metal compounds are useful in the formation of thin metal films on substrates, e.g., in chemical vapor deposition, atomic layer deposition or rapid vapor deposition processes. The substrates formed have thin film monolayers of the metals provided by the precursors.Type: ApplicationFiled: December 29, 2006Publication date: March 10, 2011Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: Thomas M. Cameron, Chongying Xu, Tianniu Chen, Matthias Stender
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Patent number: 7858816Abstract: Tantalum compounds of Formula I hereof are disclosed, having utility as precursors for forming tantalum-containing films such as barrier layers. The tantalum compounds of Formula I may be deposited by CVD or ALD for forming semiconductor device structures including a dielectric layer, a barrier layer on the dielectric layer, and a copper metallization on the barrier layer, wherein the barrier layer includes a Ta-containing layer and sufficient carbon so that the Ta-containing layer is amorphous. According to one embodiment, the semiconductor device structure is fabricated by depositing the Ta-containing barrier layer, via CVD or ALD, from a precursor including the tantalum compound of Formula I hereof at a temperature below about 400° C. in a reducing or inert atmosphere, e.g., a gas or plasma optionally containing a reducing agent.Type: GrantFiled: May 30, 2010Date of Patent: December 28, 2010Assignee: Advanced Technology Materials, Inc.Inventors: Tianniu Chen, Chongying Xu, Jeffrey F. Roeder, Thomas H. Baum
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Publication number: 20100317150Abstract: Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.Type: ApplicationFiled: August 22, 2010Publication date: December 16, 2010Applicant: Advanced Technology Materials, Inc.Inventors: William Hunks, Tianniu Chen, Chongying Xu, Jeffrey F. Roeder, Thomas H. Baum, Melissa A. Petruska, Matthias Stender, Philip S.H. Chen, Gregory T. Stauf, Bryan C. Hendrix
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Publication number: 20100314590Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g., <550° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.Type: ApplicationFiled: August 24, 2010Publication date: December 16, 2010Applicant: Advanced Technology Materials, Inc.Inventors: Ziyun WANG, Chongying Xu, Bryan Hendrix, Jeffrey Roeder, Tianniu Chen, Thomas H. Baum
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Patent number: 7838329Abstract: Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.Type: GrantFiled: May 12, 2007Date of Patent: November 23, 2010Assignee: Advanced Technology Materials, Inc.Inventors: William Hunks, Tianniu Chen, Chongying Xu, Jeffrey F. Roeder, Thomas H. Baum, Melissa A. Petruska, Matthias Stender, Philip S. H. Chen, Gregory T. Stauf, Bryan C. Hendrix