Publication number: 20100279011
Abstract: Bismuth precursors having utility for forming highly conformal bismuth-containing films by low temperature (<300° C.) vapor deposition processes such as CVD and ALD, including bismuth aminidates, bismuth guanidates, bismuth isoureates, bismuth carbamates and bismuth thiocarbamates, bismuth beta-diketonates, bismuth diketoiminates, bismuth diketiiminates, bismuth allyls, bismuth cyclopentadienyls, bismuth alkyls, bismuth alkoxides, and bismuth silyls with pendant ligands, bismuth silylamides, bismuth chelated amides, and bismuth ditelluroimidodiphosphinates. Also described are methods of making such precursors, and packaged forms of such precursors suitable for use in the manufacture of microelectronic device products. These bismuth precursors are usefully employed to form bismuth-containing films, such as films of GBT, Bi2Te3, Bi4Ti3O12, SrBi2Ta2O9, Bi—Ta—O, BiP and thermoelectric bismuth-containing films.
Type:
Application
Filed:
October 31, 2008
Publication date:
November 4, 2010
Applicant:
Advanced Technology Materials, Inc.
Inventors:
Tianniu Chen, Chongying Xu, Bryan C. Hendrix, William Hunks, Thomas M. Cameron, Matthias Stender, Gregory T. Stauf, Jeffrey F. Roeder