Abstract: An electroplating anode including a substantially convex oxidizing surface for oxidation of metal atoms in a semiconductor wafer electroplating process. The electroplating anode of the present invention substantially prolongs the lifetime of the anode and contributes to the prevention of wafer contamination due to generation of potential wafer-contaminating precipitate particles during a wafer electroplating process.

Abstract: A method and an apparatus for removing coating layers from the top of alignment marks on a wafer situated in a spin processor are described. The method may be carried out by first providing a spin process equipped with a rotatable wafer pedestal, then providing a wafer that has at least one alignment mark covered by a coating layer, mounting an edge ring on an outer periphery of the wafer pedestal, the edge ring has at least one tab section extending outwardly from an inner periphery of the edge ring, then positioning the wafer faced down and supported by an inert gas flow on the edge ring such that a narrow gap is formed between the tab section on the edge ring and the alignment marks and dispensing an etchant onto a backside of the wafer while rotating.

Abstract: A method and an apparatus for removing coating layers from the top of alignment marks on a wafer situated in a spin processor are described. The method may be carried out by first providing a spin process equipped with a rotatable wafer pedestal, then providing a wafer that has at least one alignment mark covered by a coating layer, mounting an edge ring on an outer periphery of the wafer pedestal, the edge ring has at least one tab section extending outwardly from an inner periphery of the edge ring, then positioning the wafer faced down and supported by an inert gas flow on the edge ring such that a narrow gap is formed between the tab section on the edge ring and the alignment marks and dispensing an etchant onto a backside of the wafer while rotating.

Abstract: A linear chemical mechanical polishing apparatus equipped with a brush means and a solvent spray means for cleaning the polishing pad during a chemical mechanical polishing process is described. The brush means may be provided in a cylindrical, tubular shape equipped with bristle for cleaning the surface grooves on the polishing pad and thus, removing large contaminating particles to prevent the particles from scratching the wafer surface. The solvent spray means is used to spray a jet of solvent such as deionized water onto the brush means and the polishing pad for removing debris generated by the polishing process and the cleaning process.

Abstract: Within a method for fabricating a microelectronic fabrication there is first provided a substrate having formed thereover a minimum of one microelectronic layer, where the minimum of one microelectronic layer is at least partially transparent to an incident radiation beam. There is then chemical mechanical polish (CMP) planarized the minimum of one microelectronic layer, while employing a chemical mechanical polish (CMP) planarizing method, to form from the minimum of one microelectronic layer a minimum of one chemical mechanical polish (CMP) planarized microelectronic layer.

Abstract: A new method is provided for endpoint detection of the polishing of a copper surface. The amount of copper dioxide that is removed from the surface that is being polished is monitored by means of a laser beam that is reflected off the polishing pad that is used for the polishing operation. The reflected light beam is analyzed for color content, based on this analysis it can be determined at what time no more copper dioxide is present on the surface of the polishing pad, which is the time that the process of removing copper from the surface that is being polished is complete. The polishing process is stopped at that time.

Abstract: A linear chemical mechanical polishing apparatus that is equipped with a programmable pneumatic support platen and a method for controlling the polishing profile on a wafer surface during a linear CMP process are disclosed. The programmable pneumatic support platen is positioned juxtaposed to a bottom surface of a continuous belt for the linear CMP apparatus and positioned corresponding to a position of the wafer carrier so as to force the polishing pad against the wafer surface to be polished. The support platen has a predetermined thickness, a plurality of apertures through the thickness and a plurality of openings in a top surface in fluid communication with a gas source through the plurality of apertures. The method for controlling the polishing profile can be carried out by flowing a gas flow through the plurality of apertures and the plurality of openings to force an intimate contact between the wafer surface to be polished and the polishing pad.

Abstract: A ventilated platen/polishing pad assembly for chemical mechanical polishing copper conductors on a semiconductor wafer is disclosed. The ventilated platen is constructed by a platen having a multiplicity of apertures through a thickness of the platen, and a polishing pad that has a multiplicity of apertures for fluid communication with the multiplicity of apertures in the platen such that a gas can flow through the ventilated platen and the ventilated polishing pad to mix with a polishing slurry solution dispensed on top of the polishing pad. When an oxidizing gas is mixed with the slurry solution, the mass transfer process during the chemical mechanical polishing can be improved and thus improving the polishing uniformity of the copper surface.

Abstract: A wafer mounting plate for mounting a wafer in a chemical mechanical polishing process and a method for using the wafer mounting plate are disclosed. The novel mounting plate for a silicon wafer is designed to incorporate a concave mounting surface for contacting a wafer with a flexible membrane layer thereinbetween. The wafer mounting plate is further provided with a plurality of apertures therethrough for use as vacuum passageways for picking up a wafer through a perforated or breathable membrane layer. The concave surface of the wafer mounting plate that contacts the wafer substantially eliminates stress concentration problems imposed on the wafer by conventional wafer mounting plates. The present invention novel apparatus therefore not only eliminates the edge defect problem that is normally associated with the conventional mounting plates, but further solves the wafer breakage problem frequently caused by stress concentration imposed on the wafer by a bumper ring.

Abstract: An apparatus and a method for chemical mechanical polishing a metal on a semiconductor wafer capable of achieving improved pad life are disclosed. In the apparatus, in addition to a first spray nozzle used for spraying a slurry solution onto the top of a polishing pad, a second spray nozzle is provided for mounting juxtaposed to a conditioning pad for dispensing a cleaning solution capable of dissolving polishing debris formed on the polishing pad surface. The apparatus may further include at least one cleaning solution reservoir for storing and delivering a cleaning solution to the second spray nozzle. The method can be advantageously carried out in two-steps during which a first cleaning solution is sprayed onto the pad surface for dissolving the polishing debris, and then a second cleaning solution is sprayed onto the pad surface for removing or flushing away the dissolved debris.

Abstract: The present invention discloses a gas generating device that is equipped with a gas leakage detection and control system which includes a multiple number of gas generating units each equipped with flow sensors for detecting flow rates in and out of the unit and a unit controller. The gas generating device is controlled by a main controller so that when leakage in a generating unit is detected, the unit is shut off and bypassed while the outputs of the other generating units can be increased to make up the shortage such that such that the total output from the gas generating device is not affected. The present invention novel apparatus further provides the capability that any leakage in the piping system which connects the multiple number of generating units can be detected by using flow sensors installed in a main gas inlet and a main gas outlet such that the total gas flow rates coming in and going out can be continuously monitored.