Patents by Inventor Tim Boescke
Tim Boescke has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12176453Abstract: An integrated photodetecting optoelectronic semiconductor component for detecting light bursts in a light signal received by the component includes a silicon photomultiplier for: measuring the intensity of the light signal received by the component, and outputting a measurement signal that is indicative of the light intensity of the received light signal. The component is characterised by a comparator circuit: having a first input section, a second input section and an output section, and operatively connected to the silicon photomultiplier via its first input section.Type: GrantFiled: December 5, 2023Date of Patent: December 24, 2024Assignee: OSRAM 0PTO SEMICONDUCTORS GMBHInventors: Massimo Cataldo Mazzillo, Tim Boescke, Wolfgang Zinkl
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Publication number: 20240387767Abstract: An optoelectronic device is specified having a transmitter which is designed to emit electromagnetic radiation and to be operated at an input voltage, a support for the transmitter, said support having a top surface and a bottom surface, a first receiver which is designed to receive at least part of the electromagnetic radiation and to supply at least part of an output voltage, wherein the transmitter comprises at least one surface emitter, the at least one surface emitter of the transmitter is mounted on the top surface of the support and radiates at least part of the electromagnetic radiation through the support, the first receiver (3) comprises at least one photodiode, and the first receiver is arranged on the bottom surface of the support.Type: ApplicationFiled: August 17, 2022Publication date: November 21, 2024Applicant: ams-OSRAM International GmbHInventors: Norwin VON MALM, Martin HETZL, Horst VARGA, Tim BOESCKE
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Patent number: 12025491Abstract: An optoelectronic sensing device may include an optoelectronic detection device configured to detect light and provide an electrical signal as a function of detected light. The device may further include a signal detection device configured to store at least one signal value of the electrical signal in a memory during a time interval of repeating time intervals and to output an indication signal after the time interval has elapsed.Type: GrantFiled: February 23, 2021Date of Patent: July 2, 2024Assignee: AMS-OSRAM INTERNATIONAL GMBHInventors: Andrey Lysov, Tim Boescke
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Patent number: 12009439Abstract: In an embodiment a photodiode includes a semiconductor body having a light entrance side and a back side opposite the light entrance side, a first electrode at the light entrance side atop a first doped area of a first conductivity type, a second electrode at the light entrance side atop a second doped area of a second conductivity type, the second doped area being configured to absorb radiation, a gate region at the light entrance side at least between the first electrode and the second electrode, the gate region being connected to a gate electrode, a base electrode at the semiconductor body, the base electrode being configured to receive a current flow from the first electrode, the current flow being indicative of a radiant flux of the radiation onto the second doped area and a radiation shield covering and shielding the first doped area from the radiation to be detected.Type: GrantFiled: April 24, 2020Date of Patent: June 11, 2024Assignee: ams-OSRAM International GmbHInventors: Massimo Cataldo Mazzillo, Tim Boescke
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Publication number: 20240145615Abstract: A sensor device includes a carrier having a via for guiding an electrical contact from a bottom surface to a top surface of the carrier. The device also includes an integrated circuit on the carrier, a sensor element, an optoelectronic component on the top surface of the carrier, and a first electrically conductive contact element on the via an electrically connected thereto. The device further includes a substantially opaque encapsulation material enclosing the sensor element, the optoelectronic component, and the first electrically conductive contact element such that a surface of the sensor element and of the optoelectronic component opposite the carrier is uncovered by the encapsulation material.Type: ApplicationFiled: February 22, 2022Publication date: May 2, 2024Inventors: Tim BOESCKE, Maximilian ASSIG, Thomas SCHWARZ, Andreas WALDSCHIK
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Patent number: 11888078Abstract: A semiconductor photodiode (600) comprises a top side (602) with an active surface area (604) for light entry, a bottom side (606), a bulk structure (610) made of a single semiconductor material, the bulk structure comprising a p-type layer (612a) and an n-type layer (612b), which together form the p-n junction (612) of the photodiode, wherein one of the two layers of the p-n junction is an upper p-n junction layer (612a) and the other one is a lower p-n junction layer (612b), wherein the upper p-n junction layer (612a) is located proximate to the active surface area (604), and a semiconductor light absorption layer (614), wherein the light absorption layer (612a), (614) defines the active surface area (604) and is arranged on top of the bulk structure (610), above the upper p-n junction layer (612a), and the semiconductor material of the light absorption layer (614) is different from the semiconductor material of the bulk structure (610), the light absorption layer (614) and the upper p-n junction layer (612Type: GrantFiled: January 8, 2021Date of Patent: January 30, 2024Assignee: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Massimo Cataldo Mazzillo, Tim Boescke, Wolfgang Zinkl
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Patent number: 11881824Abstract: A transimpedance amplifier may include a voltage-controlled operational amplifier having a non-inverting input connected to ground, an inverting input receiving a current signal to be amplified, an output coupled to the inverting input via a coupling resistor, and a power-down input (PWDN input) activated upon receipt of at least one power-down signal (PWDN) such that at least one internal current source is thereupon deactivated.Type: GrantFiled: November 20, 2019Date of Patent: January 23, 2024Assignee: OSRAM OPTO SEMICONDUCTORS GMBHInventor: Tim Boescke
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Patent number: 11646820Abstract: A method and an optical sensor are described herein. The optical sensor may include a communication interface for receiving data from a control unit and for transmitting data to the control unit, a storage unit with at least one register for storing data, and a CRC generator for generating a CRC checksum. The optical sensor may be configured in such a way that when data stored in the storage unit is to be transmitted to the control unit, the communication interface receives from the control unit a device address specific to the optical sensor and an address of a register in which the data to be transmitted is stored. The CRC generator may be initialized using the device address received from the communication interface and/or the register address received from the communication interface, before the CRC generator generates a CRC checksum for the data to be transmitted.Type: GrantFiled: May 19, 2020Date of Patent: May 9, 2023Assignee: OSRAM Opto Semiconductors GmbHInventors: Andrey Lysov, Tim Boescke
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Publication number: 20230131042Abstract: An optoelectronic sensing device may include an optoelectronic detection device configured to detect light and provide an electrical signal as a function of detected light. The device may further include a signal detection device configured to store at least one signal value of the electrical signal in a memory during a time interval of repeating time intervals and to output an indication signal after the time interval has elapsed.Type: ApplicationFiled: February 23, 2021Publication date: April 27, 2023Inventors: Andrey LYSOV, Tim BOESCKE
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Publication number: 20230108848Abstract: In an embodiment an optoelectronic apparatus includes a light detector having a bottom side, an upper side and at least one sidewall that extends between the upper side and the bottom side, a carrier having an upper surface on which the light detector is arranged such that the bottom side faces the carrier, at least one outer wall which is arranged on the surface of the carrier, the outer wall and the carrier forming a cavity with an opening in which the light detector resides, a filter covering the upper side of the light detector, the filter having a first threshold wavelength separating a first wavelength region from an adjacent second wavelength region, wherein the filter has a lower transmittance for light at wavelengths in the first wavelength region than for light at wavelengths in the second wavelength region and a first material layer covering the filter.Type: ApplicationFiled: March 16, 2021Publication date: April 6, 2023Inventors: Massimo Cataldo Mazzillo, Faina Esser, Claus Jaeger, Tim Boescke
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Publication number: 20220406954Abstract: A semiconductor photodiode (600) comprises a top side (602) with an active surface area (604) for light entry, a bottom side (606), a bulk structure (610) made of a single semiconductor material, the bulk structure comprising a p-type layer (612a) and an n-type layer (612b), which together form the p-n junction (612) of the photodiode, wherein one of the two layers of the p-n junction is an upper p-n junction layer (612a) and the other one is a lower p-n junction layer (612b), wherein the upper p-n junction layer (612a) is located proximate to the active surface area (604), and a semiconductor light absorption layer (614), wherein the light absorption layer (614) defines the active surface area (604) and is arranged on top of the bulk structure (610), above the upper p-n junction layer (612a), and the semiconductor material of the light absorption layer (614) is different from the semiconductor material of the bulk structure (610), the light absorption layer (614) and the upper p-n junction layer (612a) thusType: ApplicationFiled: January 8, 2021Publication date: December 22, 2022Inventors: Massimo Cataldo MAZZILLO, Tim BOESCKE, Wolfgang ZINKL
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Patent number: 11530987Abstract: A photonic gas sensor and a method for producing a photonic gas sensor are disclosed. In an embodiment a photonic gas sensor includes a component housing with at least one cavity, a radiation-emitting semiconductor chip arranged in the cavity and configured to transmit electromagnetic radiation in a first wavelength range, a radiation-detecting semiconductor chip arranged in the cavity and configured to detect electromagnetic radiation in a second wavelength range and an active sensor element having a fluorescent dye configured to emit electromagnetic radiation in the second wavelength range upon being excited by electromagnetic radiation in the first wavelength range, wherein an intensity of the emitted electromagnetic radiation in the second wavelength range changes reversibly in presence of a gas to be detected.Type: GrantFiled: November 23, 2018Date of Patent: December 20, 2022Assignee: OSRAM OLED GMBHInventors: Matthias Sperl, Tim Boescke, Daniele Brunazzo
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Publication number: 20220353013Abstract: A method and an optical sensor are described herein. The optical sensor may include a communication interface for receiving data from a control unit and for transmitting data to the control unit, a storage unit with at least one register for storing data, and a CRC generator for generating a CRC checksum. The optical sensor may be configured in such a way that when data stored in the storage unit is to be transmitted to the control unit, the communication interface receives from the control unit a device address specific to the optical sensor and an address of a register in which the data to be transmitted is stored. The CRC generator may be initialized using the device address received from the communication interface and/or the register address received from the communication interface, before the CRC generator generates a CRC checksum for the data to be transmitted.Type: ApplicationFiled: May 19, 2020Publication date: November 3, 2022Inventors: Andrey LYSOV, Tim BOESCKE
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Patent number: 11428627Abstract: In an embodiment a sensor device includes a first optoelectronic emitter configured to irradiate a spot with electromagnetic rays, a second optoelectronic emitter configured to irradiate the spot with electromagnetic rays, a detector configured to detect electromagnetic rays from the first and second emitters reflected at or transmitted through the spot, wherein the electromagnetic rays of the first emitter have a wavelength in a range of 1400-1500 nm, wherein the electromagnetic rays of the second emitter have a wavelength in a range of 900-1100 nm, and wherein the second emitter is configured to emit at least one further electromagnetic signal, the one further electromagnetic signal not being used for measuring a humidity.Type: GrantFiled: September 20, 2019Date of Patent: August 30, 2022Assignee: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Gerd Plechinger, Tim Boescke, Wolfgang Zinkl
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Publication number: 20220228908Abstract: An optoelectronic sensor component for measuring light may include a first signal channel, a second signal channel, a first light-sensitive detection assembly, a second light-sensitive detection assembly, a further light-sensitive detection assembly, and an assigned further signal channel. The first signal channel may provide a first electrical signal, which represents the intensity of light incident on the sensor component. The second signal channel may provide a second electrical signal representing the intensity of the light incident on the sensor component. The first and second light-sensitive detection assemblies may generate the first and second electrical signals, respectively, and be assigned to the first and second signal channels, respectively. Both detection assemblies may have an identical spectral sensitivity and are thus redundant with respect to one another. The spectral sensitivity of both detection assemblies may have a photopic profile.Type: ApplicationFiled: May 27, 2020Publication date: July 21, 2022Inventors: Andrey LYSOV, Tim BOESCKE
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Patent number: 11371883Abstract: A semiconductor light source configured for a spectrometer may include at least one multipixel chip, at least one color setting component disposed optically downstream of at least one of emission region, and a drive unit. The color setting component may be configured for altering a spectral emission behavior of assigned emission regions. The drive unit may be configured to operate a plurality of mutually independently drivable emission regions successively, such that during operation thereof at least three spectrally narrowband individual spectra are emitted successively by the plurality of mutually independently drivable emission regions together with the associated color setting component from which individual spectra a total spectrum emitted by the semiconductor light source is constituted.Type: GrantFiled: October 9, 2018Date of Patent: June 28, 2022Assignee: OSRAM OLED GmbHInventors: Christopher Koelper, Carola Diez, Tim Boescke, Thomas Kippes, Melanie Sternecker, Daniel Dietze
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Publication number: 20220006433Abstract: A transimpedance amplifier may include a voltage-controlled operational amplifier having a non-inverting input connected to ground, an inverting input receiving a current signal to be amplified, an output coupled to the inverting input via a coupling resistor, and a power-down input (PWDN input) activated upon receipt of at least one power-down signal (PWDN) such that at least one internal current source is thereupon deactivated.Type: ApplicationFiled: November 20, 2019Publication date: January 6, 2022Inventor: Tim BOESCKE
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Patent number: 11185243Abstract: A sensor device includes a first light emitter that emits light with a wavelength from a first spectral range, a second light emitter that emits light with a wavelength from a second spectral range, a first light detector configured to detect light with a wavelength from the first spectral range, but not to respond to light with a wavelength from the second spectral range, and a second light detector configured to detect light with a wavelength from the first spectral range and light with a wavelength from the second spectral range, wherein a distance between the first light emitter and the first light detector is smaller than a distance between the second light emitter and the second light detector.Type: GrantFiled: May 23, 2017Date of Patent: November 30, 2021Assignee: OSRAM OLED GmbHInventors: Tim Böscke, Stephan Haslbeck
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Publication number: 20210349016Abstract: In an embodiment a sensor device includes a first optoelectronic emitter configured to irradiate a spot with electromagnetic rays, a second optoelectronic emitter configured to irradiate the spot with electromagnetic rays, a detector configured to detect electromagnetic rays from the first and second emitters reflected at or transmitted through the spot, wherein the electromagnetic rays of the first emitter have a wavelength in a range of 1400-1500 nm, wherein the electromagnetic rays of the second emitter have a wavelength in a range of 900-1100 nm, and wherein the second emitter is configured to emit at least one further electromagnetic signal, the one further electromagnetic signal not being used for measuring a humidity.Type: ApplicationFiled: September 20, 2019Publication date: November 11, 2021Applicant: OSRAM Opto Semiconductors GmbHInventors: Gerd Plechinger, Tim Boescke, Wolfgang Zinkl
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Patent number: 11114574Abstract: A semiconductor sensor includes a detector chip that detects green light and an interference filter that optically precedes the detector chip and is permeable to green light and impermeable and reflective to red light and near-infrared radiation. A color filter optically precedes the interference filter. The color filter has a transparency of at least 60% for green light and has an absorbing effect for red light and near-infrared radiation. The semiconductor sensor appears gray or black in the region of the interference filter independently of the angle.Type: GrantFiled: June 13, 2018Date of Patent: September 7, 2021Assignee: OSRAM Opto Semiconductors GmbHInventors: Daniel Dietze, Tim Boescke, Wolfgang Zinkl