Abstract: A sensor device is disclosed. In an embodiment, the sensor device includes a carrier having a plane carrier surface, a plurality of photodetectors arranged on the carrier surface, each photodetector including a photosensitive sensor area and a lens arrangement arranged opposite the sensor areas, wherein the lens arrangement includes an optical axis, wherein the lens arrangement is configured to image electromagnetic radiation onto the sensor areas, wherein the plurality of photodetectors comprise at least one first photodetector having a first sensor area, the first sensor area comprises at least one property which differs from a property of a second sensor area of a second photodetector of the plurality of photodetectors, and wherein the second photodetector is arranged closer to the optical axis than the at least one first photodetector in order to reduce an optical imaging aberration of the lens arrangement.

Abstract: A sensor device includes a first light emitter that emits light with a wavelength from a first spectral range, a second light emitter that emits light with a wavelength from a second spectral range, a first light detector configured to detect light with a wavelength from the first spectral range, but not to respond to light with a wavelength from the second spectral range, and a second light detector configured to detect light with a wavelength from the first spectral range and light with a wavelength from the second spectral range, wherein a distance between the first light emitter and the first light detector is smaller than a distance between the second light emitter and the second light detector.

Abstract: An optical heart rate sensor is disclosed. In an embodiment the optical heart rate sensor includes at least one light source and at least one photodetector, wherein the light source comprises a blue light-emitting diode with a conversion phosphor, and wherein the conversion phosphor converts the blue light into a green-yellow light.

Abstract: The invention relates to a method for producing a solar cell (1) from crystalline semiconductor material, wherein a first doping region (5) is formed by means of ion implantation (S2) of a first dopant in a first surface (3a) of a semiconductor substrate (3), and a second doping region (7) is formed by means of ion implantation (S3) or thermal indiffusion of a second dopant in the second surface (3b) of the semiconductor substrate. After the doping of the second surface, a cap (9b) acting as an outdiffusion barrier for the second dopant is applied and an annealing step (S4) is subsequently carried out.

Abstract: An optical sensor that captures a heart rate and/or a blood oxygen content includes a light source including a light emitter that emits electromagnetic radiation with a first wavelength range including green light, a second wavelength range including red light and a third wavelength range including infrared radiation, and three light detectors, each including a filter for electromagnetic radiation, wherein a first filter is transmissive for light of the first wavelength range and non-transmissive for light of the second wavelength range and the infrared radiation of the third wavelength range, a second filter is transmissive for light of the second wavelength range and non-transmissive for light of the first wavelength range and the infrared radiation of the third wavelength range and a third filter is transmissive for the infrared radiation of the third wavelength range and non-transmissive for light of the first and the second wavelength range.

Abstract: An optical sensor that captures a heart rate and/or a blood oxygen content includes a light source including a light emittor that emits electromagnetic radiation with a first wavelength range including green light, a second wavelength range including red light and a third wave-length range including infrared radiation, and three light detectors, each including a filter for electromagnetic radiation, wherein a first filter is transmissive for light of the first wavelength range and non-transmissive for light of the second wavelength range and the infrared radiation of the third wavelength range, a second filter is transmissive for light of the second wavelength range and non-transmissive for light of the first wavelength range and the infrared radiation of the third wavelength range and a third filter is transmissive for the infrared radiation of the third wavelength range and non-transmissive for light of the first and the second wavelength range.

Abstract: An integrated circuit for sensor applications includes a plurality of photosensitive areas on a top side, capable of measuring incident light, thereby creating a signal, and a processing unit adapted to evaluate the signal measured by the photosensitive areas; and a sensor including 1) the integrated circuit, 2) a housing with a first cavity and a second cavity, and 3) a barrier located between the first cavity and the second cavity, wherein the integrated circuit is located within the first cavity, the top side of the integrated circuit faced upwardly, and a light source is located within the second cavity.

Abstract: A sensor device is disclosed. In an embodiment, the sensor device includes a carrier having a plane carrier surface, a plurality of photodetectors arranged on the carrier surface, each photodetector including a photosensitive sensor area and a lens arrangement arranged opposite the sensor areas, wherein the lens arrangement includes an optical axis, wherein the lens arrangement is configured to image electromagnetic radiation onto the sensor areas, wherein the plurality of photodetectors comprise at least one first photodetector having a first sensor area, the first sensor area comprises at least one property which differs from a property of a second sensor area of a second photodetector of the plurality of photodetectors, and wherein the second photodetector is arranged closer to the optical axis than the at least one first photodetector in order to reduce an optical imaging aberration of the lens arrangement.

Abstract: The invention relates to a method for producing a solar cell (1) from crystalline semiconductor material. In a first surface (3a) of a semiconductor substrate (3), a first doping area (5) is formed by thermally diffusing a first dopant and in the second surface (3b) of the semiconductor substrate, a second doping area (7) is formed by implanting ions and thermally implanting a second dopant.

Abstract: The invention relates to a method for producing a solar cell (1) from crystalline semiconductor material, wherein a first doping region (5) is formed by means of ion implantation (S2) of a first dopant in a first surface (3a) of a semiconductor substrate (3), and a second doping region (7) is formed by means of ion implantation (S3) or thermal indiffusion of a second dopant in the second surface (3b) of the semiconductor substrate. After the doping of the second surface, a cap (9b) acting as an outdiffusion barrier for the second dopant is applied and an annealing step (S4) is subsequently carried out.

Abstract: The invention relates to a method (800) for producing a contact structure (104) of a photovoltaic cell (100), wherein the method (800) comprises a step (802) of providing, a step (804) of doping, and a step (806) of contacting. In step (802) of providing, a wafer (102) for the photovoltaic cell (100) is provided. In step (804) of doping, a surface portion of at least one side of the wafer (102) is doped with a doping material in order to obtain a doped region (106), wherein the doped region (106) is formed as doped tracks (106) and the tracks (106) are separated by intermediate spaces (110). In step (806) of contacting, the doped region (106) is contacted in order to produce the contact structure (104), wherein a conductor material (108) is applied to the tracks (106) in such a way that the tracks (106) protrude beyond the conductor material (108) on both sides.

Abstract: The invention relates to a method for producing a solar cell composed of crystalline silicon, as well as a solar cell of said type. The substrate of said solar cell has, in a first surface, a first doping region produced by boron diffusion and, in a second surface, a phosphorus-doped second doping region.

Abstract: In a method for producing a solar cell having a substrate made of crystalline silicon, on a surface of the Si substrate, a locally defined n-doped emitter region is produced by full-surface cold coating of the surface using a P-containing coating, followed by a local laser beam-doping of P atoms from the P-containing coating, and subsequent thermal driving in of the P atoms, starting from the doping-in region.

Abstract: In a method for producing a solar cell having a substrate made of crystalline silicon, on a surface of the Si substrate, a locally defined n-doped emitter region is produced by full-surface cold coating of the surface using a P-containing coating, followed by a local laser beam-doping of P atoms from the P-containing coating, and subsequent thermal driving in of the P atoms, starting from the doping-in region.

Abstract: A method for producing a solar cell from a silicon substrate, which has a first main surface, used in normal application as an incident light side and a second main surface, used as the back surface, having a passivating layer on the second main surface, includes the steps: applying an oxygen-containing layer onto the second main surface of the silicon substrate, and heating the silicon substrate to a temperature of at least 800° C. to densify the oxide-containing layer and for the oxidation of the boundary surface between the oxide-containing layer and the second main surface of the silicon substrate to form a thermal oxide, an oxygen source giving off oxygen for the oxidation.

Abstract: The present invention refers to an electrode comprising a first metallic layer and a compound comprising at least one of a nitride, oxide, and oxynitride of a second metallic material.

Abstract: A method for manufacturing an integrated circuit including a ferroelectric memory cell is disclosed. One embodiment of the method includes: forming a amorphous oxide layer over a carrier, the amorphous layer including: O and any of the group of: Hf, Zr and (Hf,Zr), forming a covering layer on the amorphous layer, and heating the amorphous layer up to a temperature above its crystallization temperature to at least partly alter its crystal state from amorphous to crystalline, resulting in a crystallized oxide layer.

Abstract: Embodiments of the invention provide methods for making an integrated circuit comprising providing a substrate, forming a structured layer stack on the substrate comprising a dielectric layer located on the substrate and an oxide-free metallic layer located on the dielectric layer, wherein the metallic layer comprising a transition metal. The method further comprises oxidizing the metallic layer, thereby increasing a work function of the metallic layer. Moreover, a substrate for making an integrated circuit is described.

Abstract: An integrated circuit including a dielectric layer and a method for manufacturing. One embodiment provides a substrate having a first side and a second side and at least one dielectric layer. The dielectric layer includes a zirconium oxide and at least one dopant selected from the group consisting of hafnium and titanium and having a first side and a second side. The first side of the dielectric layer is arranged at least on a subarea of the first side of the semiconductor substrate.

Abstract: A capacitor structure comprises a first and a second electrode of conducting material. Between the first and second electrodes, an atomic layer deposited dielectric film is disposed, which comprises zirconium oxide and a dopant oxide. Herein, the dopant comprises an ionic radius that differs by more than 24 pm from an ionic radius of zirconium, while the dielectric film comprises a dopant content of 10 atomic percent or less of the dielectric film material excluding oxygen. A process for fabricating a capacitor comprises a step of forming a bottom electrode of the capacitor. On the bottom electrode, a dielectric film comprising zirconium oxide is deposited, and a step for introducing a dopant oxide into the dielectric film performed. On the dielectric structure, a top electrode is formed.