Abstract: An apparatus and method for the determination of a depth profile and/or one or more depth profile characteristics of a dopant material in a semiconductor device includes a light source which can illuminate the device at two or more illumination wavelengths, a detector that receives scattered light from the semiconductor device and determines an intensity characteristic for one or more Raman spectral lines attributable to the presence of the dopant material in the semiconductor device. The intensity characteristics of the Raman spectral lines can then be used to determine the depth profile or depth profile characteristics using profile constants measured from known samples at each of the illumination wavelengths. This apparatus and method can be used in-line because it is noninvasive, relatively quick, and nondestructive.

Abstract: An improved solder bump composition and method advantageously employs a thin low-alpha layer of lead (Pb) deposited in close proximity to alpha particle sensitive devices, while ordinary (i.e., low cost) Pb is used for the bulk of the solder bump. This approach allows for reduced overall cost while still providing protection from alpha-particle induced soft errors. The low-alpha layer reduces the flux of alpha particle into devices in two ways. First, the low-alpha layer is itself essentially Pb.sup.210 free and therefore alpha particle emissions from the low-alpha layer are negligible. Second, the low-alpha layer is substantially opaque to alpha particles emitted by the ordinary Pb which includes Pb.sup.210. As a result, sensitive circuits on a semiconductor chip employing the improved solder bump are shielded from alpha particle emissions of the low-cost Pb.sup.210 -containing portion of a solder bump.

Abstract: An interlevel dielectric and a method for making same wherein boron is introduced into the dielectric though an implantation process. During the implantation process, either the boron-10 or the boron-11 boron isotope may be selected and introduced into the dielectric. Boron is introduced to make the dielectric flow at lower temperatures. Selectively implanting boron-10 or boron-11 during implantation, as opposed to buying boron comprising a specific boron isotope from a supplier and introducing boron during CVD, lowers the production costs. Furthermore, introducing boron into the dielectric during the implantation process as opposed to during deposition of the dielectric during a CVD process, the dielectric layer is free of "boron" bumps. Boron-bearing dielectrics can be made to made to flow at lower temperatures than dielectrics which do not contain boron.

Abstract: A neutron detecting semiconductor device and process for fabricating the same is provided. In one particular embodiment, a semiconductor device for detecting neutrons is formed by forming one or more memory cells on a substrate and forming a neutron-reactant material over the one or more memory cells. Upon reacting with a neutron, the neutron-reactant material emits one or more particles capable of inducing a state change in the one or more memory cells. The neutron-reactant material may be formed from a borophosphosilicate glass (BPSG) having a relatively high concentration of .sup.10 Boron. For example, the concentration .sup.10 Boron may range from 80 to 100 percent or 95 to 100 percent of the total Boron concentration in the BPSG material.

Abstract: A method and apparatus are provided for obtaining molecular information about materials at a selected site on or in a semiconductor topography. In a preferred embodiment, the selected site is a defect from a defect map generated by an automated wafer inspection system. A sample stage and drive/alignment system are used to move the semiconductor topography such that a selected defect is aligned with the illumination provided by a radiation scattering measurement system. A Raman spectroscopy system may be used for the radiation scattering measurement. The intensity and frequency of inelastically scattered radiation from the vicinity of the selected defect is compared to standard spectra to determine the chemical composition and material phase of the region analyzed. The depth into the topography probed may be adjusted by changing the wavelength of radiation used in the Raman spectroscopy measurement.

Abstract: A concentration measurement device is calibrated for a target element by performing a concentration measurement on a reference standard sample which includes a number of atoms of a radioactive marker element in known ratio to a number of atoms of the target element. Both the ratio of atoms of the target element to those of the radioactive marker element and a count of decay products of the radioactive marker element are analytically quantified. Because the count of decay products is correlated with the number of atoms of the radioactive marker element, the ratio and the count of decay products are used to accurately calculate the otherwise unknown number of impurity atoms and to calibrate a concentration measurement signal from the concentration measurement device.

Abstract: An apparatus and method are present which use X-ray fluorescence techniques to determine the roughness of a target surface. The apparatus includes an X-ray source and an X-ray detector. The X-ray source produces primary X-ray photons formed into a primary X-ray beam, and the primary X-ray beam is directed to and incident upon the target surface. The X-ray detector is positioned to receive primary X-ray photons scattered by the target surface. A fraction of the primary X-ray photons scattered by the target surface is directly proportional to the roughness of the target surface. The roughness of the target surface is determined from the number of primary X-ray photons scattered by the target surface and received by the X-ray detector within a predetermined exposure time. The X-ray detector produces an output signal proportional to the energy levels of received X-ray photons. An energy range of interest is divided into segments.

Abstract: An improved solder bump composition and method advantageously employs a thin low-alpha layer of lead (Pb) deposited in close proximity to alpha particle sensitive devices, while ordinary (i.e., low cost) Pb is used for the bulk of the solder bump. This approach allows for reduced overall cost while still providing protection from alpha-particle induced soft errors. The low-alpha layer reduces the flux of alpha particle into devices in two ways. First, the low-alpha layer is itself essentially Pb.sup.210 free and therefore alpha particle emissions from the low-alpha layer are negligible. Second, the low-alpha layer is substantially opaque to alpha particles emitted by the ordinary Pb which includes Pb.sup.210. As a result, sensitive circuits on a semiconductor chip employing the improved solder bump are shielded from alpha particle emissions of the low-cost Pb.sup.210 -containing portion of a solder bump.

Abstract: An interlevel dielectric and a method for making same wherein boron is introduced into the dielectric though an implantation process. During the implantation process, either the boron-10 or the boron-11 boron isotope may be selected and introduced into the dielectric. Boron is introduced to make the dielectric flow at lower temperatures. Selectively implanting boron-10 or boron-11 during implantation, as opposed to buying boron comprising a specific boron isotope from a supplier and introducing boron during CVD, lowers the production costs. Furthermore, by introducing boron into the dielectric during the implantation process as opposed to during deposition of the dielectric during a CVD process, the dielectric layer is free of boron bumps. Boron-bearing dielectrics can be made to made to flow at lower temperatures than dielectrics which do not contain boron.

Abstract: A concentration measurement device is calibrated for a target element by performing a concentration measurement on a reference standard sample which includes a number of atoms of a radioactive marker element in known ratio to a number of atoms of the target element. Both the ratio of atoms of the target element to those of the radioactive marker element and a count of decay products of the radioactive marker element are analytically quantified. Because the count of decay products is correlated with the number of atoms of the radioactive marker element, the ratio and the count of decay products are used to accurately calculate the otherwise unknown number of impurity atoms and to calibrate a concentration measurement signal from the concentration measurement device.

Abstract: Concentration measurement equipment is calibrated by performing a concentration measurement on a reference standard sample which includes a radioactive marker element. Because a count of decay products can be correlated with the number of atoms of the radioactive marker element, a precise count of decay products of the radioactive marker element is used to calculate an otherwise unknown number of atoms of the radioactive marker element on the reference standard sample. The calculated number of atoms of radioactive marker element is then used to calibrate a concentration measurement of the radioactive marker element by the concentration measurement device. Suitable radioactive marker elements for use in calibrating concentration measurement equipment include Pm-147 and Tc-99.

Abstract: A method and apparatus are presented which provide non-intrusive detection of atoms of light elements (atomic numbers 3-13) on a surface of a semiconductor substrate using X-ray fluorescence (XRF). The present technique may be economically performed routinely on manufactured products. The method includes producing a monochromatic X-ray beam comprising X-ray photons with energy levels operably chosen to cause only atoms of light elements to emit secondary X-ray photons. The monochromatic X-ray beam is then focused onto a circular exposed region on the surface of the semiconductor substrate, the circular exposed region having a diameter ranging from about 0.5 mm to about 10.0 mm. Secondary X-ray photons emitted by atoms of light elements in the exposed region on the surface of the semiconductor substrate are directed to at least one X-ray detector. Each X-ray detector is aligned to receive secondary X-ray photons from a single light element, and is illuminated for a predetermined amount of time.

Abstract: An apparatus and method are presented for determining the identity and quantity of elements embedded within a thin film. A radioisotopic source produces a beam of primary x-rays which impinge at near-grazing angles upon a sample consisting of a thin film and an underlying semiconductor substrate. The beam of primary x-rays cause the emission of characteristic secondary x-ray photons from the thin film of the sample. These secondary x-ray photons are detected by a detector positioned above the sample. The detected X-ray photons are counted and their energies are determined, allowing for the determination of the identity and quantity of elements within the thin film.

Abstract: An apparatus and method are presented for determining the elemental compositions and relative locations of particles on a surface of a semiconductor wafer. An exposed region of the surface of the semiconductor wafer is subjected to a beam of primary X-ray photons, and secondary X-ray photons emitted by atoms of elements on and just under the surface of the semiconductor wafer are detected by an X-ray detector array which includes multiple X-ray detectors. Each X-ray detector produces an output signal which is proportional to energy levels of incident X-ray photons. The X-ray detectors are laterally displaced from one another, and arranged to allow two-dimensional resolution of detected secondary X-ray photons emitted by atoms of elements on the surface of the semiconductor wafer. The X-ray detector array is preferably an electronic area image sensor including a two-dimensional array of photosensor elements formed upon a monolithic semiconductor substrate.

Abstract: A method and apparatus is presented which applies X-ray fluorescence spectrometry techniques to the problem of determining the elemental composition and thickness of multi-layer structures formed upon a semiconductor substrate. The resulting method and apparatus allows fast, accurate, non-contact, non-destructive, single-measurement determination of the compositions and thicknesses of each thin film on a surface of a measurement sample. Primary X-ray photons emitted by two radioisotopic X-ray sources following defined X-ray paths are incident upon a measurement sample. If the primary X-ray photons have sufficient energy, atoms in the exposed surface of the measurement sample will absorb the energies of the incident primary X-ray photons and emit secondary X-ray photons with characteristic energy levels. Secondary X-ray photons following paths within a defined detection space will reach a sensing face of a lithium-drifted silicon detector and will be detected and counted by a measurement system.