Abstract: A film having filling capability of a patterned recess on a surface of a substrate is deposited by forming a viscous material in a gas phase by striking a plasma in a chamber filled with a volatile precursor that can be polymerized within certain parameter ranges which include a partial pressure of the precursor during a plasma strike and substrate temperature.

Abstract: A Si-free C-containing film having filling capability is deposited by forming a viscous polymer in a gas phase by striking an Ar, He, or N2 plasma in a chamber filled with a volatile hydrocarbon precursor that can be polymerized within certain parameter ranges which define mainly partial pressure of precursor during a plasma strike, and wafer temperature.

Abstract: A film having filling capability is deposited by forming a viscous polymer in a gas phase by striking an Ar, He, or N2 plasma in a chamber filled with a volatile hydrocarbon precursor that can be polymerized within certain parameter ranges which define mainly partial pressure of precursor during a plasma strike, and wafer temperature.

Abstract: A film having filling capability of a patterned recess on a surface of a substrate is deposited by forming a viscous material in a gas phase by striking a plasma in a chamber filled with a volatile precursor that can be polymerized within certain parameter ranges which include a partial pressure of the precursor during a plasma strike and substrate temperature.

Abstract: A film having filling capability of a patterned recess on a surface of a substrate is deposited by forming a viscous material in a gas phase by striking a plasma in a chamber filled with a volatile precursor that can be polymerized within certain parameter ranges which include a partial pressure of the precursor during a plasma strike and substrate temperature.

Abstract: A method for reforming an amorphous carbon film as part of a deposition process thereof, includes process of: (i) depositing an amorphous carbon film on a substrate in a reaction space until a thickness of the amorphous carbon film reaches a predetermined thickness, and then stopping the deposition process; and (ii) exposing the amorphous carbon film to an Ar and/or He plasma in an atmosphere substantially devoid of hydrogen, oxygen, and nitrogen.

Abstract: A method of forming a topology-controlled layer on a patterned recess of a substrate, includes: (i) depositing a Si-free C-containing film having filling capability on the patterned recess of the substrate by pulse plasma-assisted deposition to fill the recess in a bottom-up manner or bottomless manner; and (ii) subjecting the bottom-up or bottomless film filled in the recess to plasma aching to remove a top portion of the filled film in a manner leaving primarily or substantially only a bottom portion of the filled film or primarily or substantially only a sidewall portion of the filled film.

Abstract: A film having filling capability of a patterned recess on a surface of a substrate is deposited by forming a viscous material in a gas phase by striking a plasma in a chamber filled with a volatile precursor that can be polymerized within certain parameter ranges which include a partial pressure of the precursor during a plasma strike and substrate temperature.

Abstract: A method for reforming an amorphous carbon film as part of a deposition process thereof, includes process of: (i) depositing an amorphous carbon film on a substrate in a reaction space until a thickness of the amorphous carbon film reaches a predetermined thickness, and then stopping the deposition process; and (ii) exposing the amorphous carbon film to an Ar and/or He plasma in an atmosphere substantially devoid of hydrogen, oxygen, and nitrogen.

Abstract: In exemplary embodiment, a method of top-selective deposition using a flowable carbon-based film on a substrate having a recess defined by a top surface, sidewall, and a bottom, includes steps of: (i) depositing a flowable carbon-based film in the recess of the substrate in a reaction space until a thickness of the flowable carbon-based film in the recess reaches a predetermined thickness, and then stopping the deposition step; and (ii) exposing the carbon-based film to a nitrogen plasma in an atmosphere substantially devoid of hydrogen and oxygen so as to redeposit a carbon-based film selectively on the top surface.

Abstract: A method of forming a topology-controlled layer on a patterned recess of a substrate, includes: (i) depositing a Si-free C-containing film having filling capability on the patterned recess of the substrate by pulse plasma-assisted deposition to fill the recess in a bottom-up manner or bottomless manner; and (ii) subjecting the bottom-up or bottomless film filled in the recess to plasma aching to remove a top portion of the filled film in a manner leaving primarily or substantially only a bottom portion of the filled film or primarily or substantially only a sidewall portion of the filled film.

Abstract: The invention relates to depositing a layer on a substrate in a reactor, by: introducing a first precursor comprising a silicon halide in the reactor; introducing a second precursor in the reactor; providing an energy source to create a plasma from the second precursor so that the second precursor reacts with the first precursor until a primary layer comprising silicon and second precursor of a desired thickness is formed; stop introducing the second precursor; and, subsequently introducing the silicon halide in the reactor at a temperature causing decomposition of the silicon halide precursor to provide a substantially pure amorphous silicon layer on top of the primary layer.

Abstract: A Si-free C-containing film having filling capability is deposited by forming a viscous polymer in a gas phase by striking an Ar, He, or N2 plasma in a chamber filled with a volatile hydrocarbon precursor that can be polymerized within certain parameter ranges which define mainly partial pressure of precursor during a plasma strike, and wafer temperature.

Abstract: A film having filling capability is deposited by forming a viscous polymer in a gas phase by striking an Ar, He, or N2 plasma in a chamber filled with a volatile hydrocarbon precursor that can be polymerized within certain parameter ranges which define mainly partial pressure of precursor during a plasma strike, and wafer temperature.

Abstract: A Si-free C-containing film having filling capability is deposited by forming a viscous polymer in a gas phase by striking an Ar, He, or N2 plasma in a chamber filled with a volatile hydrocarbon precursor that can be polymerized within certain parameter ranges which define mainly partial pressure of precursor during a plasma strike, and wafer temperature.

Abstract: A film having filling capability is deposited by forming a viscous polymer in a gas phase by striking an Ar, He, or N2 plasma in a chamber filled with a volatile hydrocarbon precursor that can be polymerized within certain parameter ranges which define mainly partial pressure of precursor during a plasma strike, and wafer temperature.

Abstract: A Si-free C-containing film having filling capability is deposited by forming a viscous polymer in a gas phase by striking an Ar, He, or N2 plasma in a chamber filled with a volatile hydrocarbon precursor that can be polymerized within certain parameter ranges which define mainly partial pressure of precursor during a plasma strike, and wafer temperature.

Abstract: A film having filling capability is deposited by forming a viscous polymer in a gas phase by striking an Ar, He, or N2 plasma in a chamber filled with a volatile hydrocarbon precursor that can be polymerized within certain parameter ranges which define mainly partial pressure of precursor during a plasma strike, and wafer temperature.

Abstract: A method of forming a thermally stable organosilicon polymer includes: (i) depositing an organosilicon polymer whose backbone is composed of silicon atoms on a substrate using a silicon-containing precursor in a reaction space; and (ii) exposing the organosilicon polymer deposited in step (i) to a hydrogen plasma in the absence of the precursor in the reaction space in a manner increasing Si—H bonds and decreasing C—H bonds in the organosilicon polymer without depositing an organosilicon polymer.

Abstract: A Si-free C-containing film having filling capability is deposited by forming a viscous polymer in a gas phase by striking an Ar, He, or N2 plasma in a chamber filled with a volatile hydrocarbon precursor that can be polymerized within certain parameter ranges which define mainly partial pressure of precursor during a plasma strike, and wafer temperature.