Abstract: In an embodiment, a method for transferring a pattern constituted by vertical spacers arranged on a template with intervals to the template, includes depositing by plasma-enhanced cyclic deposition a layer as a spacer umbrella layer substantially only on a top surface of each vertical spacer made of silicon or metal oxide, wherein substantially no layer is deposited on sidewalls of the vertical spacers and on an exposed surface of the template, followed by transferring the pattern constituted by the vertical spacers to the template by anisotropic etching using the vertical spacers with the spacer umbrella layers.

Abstract: The invention relates to depositing a layer on a substrate in a reactor, by: introducing a first precursor comprising a silicon halide in the reactor; introducing a second precursor in the reactor; providing an energy source to create a plasma from the second precursor so that the second precursor reacts with the first precursor until a primary layer comprising silicon and second precursor of a desired thickness is formed; stop introducing the second precursor; and, subsequently introducing the silicon halide in the reactor at a temperature causing decomposition of the silicon halide precursor to provide a substantially pure amorphous silicon layer on top of the primary layer.

Abstract: In an embodiment, a method for transferring a pattern constituted by vertical spacers arranged on a template with intervals to the template, includes depositing by plasma-enhanced cyclic deposition a layer as a spacer umbrella layer substantially only on a top surface of each vertical spacer made of silicon or metal oxide, wherein substantially no layer is deposited on sidewalls of the vertical spacers and on an exposed surface of the template, followed by transferring the pattern constituted by the vertical spacers to the template by anisotropic etching using the vertical spacers with the spacer umbrella layers.

Abstract: A method is for forming a nitride or oxide film by plasma-assisted cyclic deposition, one cycle of which includes: feeding a first reactant, a second reactant, and a precursor to a reaction space where a substrate is placed, wherein the second reactant flows at a first flow ratio wherein a flow ratio is defined as a ratio of a flow rate of the second reactant to a total flow rate of gases flowing in the reaction space; and stopping feeding the precursor while continuously feeding the first and second reactants at a flow ratio which is gradually reduced from the first flow ratio to a second flow ratio while applying RF power to the reaction space to expose the substrate to a plasma. The second reactant is constituted by a hydrogen-containing compound or oxygen-containing compound.