Abstract: A method for optimizing imaging and process parameter settings in a lithographic pattern imaging and processing system. The method includes correlating the dimensions of a first set of at least one control pattern printed in a lithographic resist layer, measured at three or more locations on or within the pattern which correspond to differing dose, defocus and blur sensitivity. The method then includes measuring the dimensions on subsequent sets of control patterns, printed in a lithographic resist layer, at three or more locations on or within each pattern, of which a minimum of three locations match those measured in the first set, and determining the effective dose, defocus and blur values associated with forming the subsequent sets of control patterns by comparing the dimensions at the matching locations with the correlated dependencies.

Abstract: A method of making a process monitor grating pattern for use in a lithographic imaging system comprises determining minimum resolvable pitch of a plurality of spaced, adjacent line elements, and selecting a process monitor grating period that is an integer multiple M, greater than 1, of the minimum resolvable pitch. The method then includes designing a process monitor grating pattern having a plurality of adjacent sets of grouped line elements spaced from each other. Each set of grouped line elements is spaced from and parallel to an adjacent set of grouped line elements by the process monitor grating period, such that when the process monitor grating pattern is projected by the lithographic imaging system the line elements in each set are unresolvable from each other and Fourier coefficients of diffracted orders m created by the line elements in the range of 1<|m|?M are zero.

Abstract: A method of forming a planar CMOS transistor divides the step of forming the gate layer into a first step of patterning a resist layer with a first portion of the gate layer pattern and then etching the polysilicon with the pattern of the gates. A second step patterns a second resist layer with the image of the gate pads and local interconnect and then etching the polysilicon with the pattern of the gate pads and local interconnect, thereby reducing the number of diffraction and other cross-talk from different exposed areas.

Abstract: A method of making a process monitor grating pattern for use in a lithographic imaging system comprises determining minimum resolvable pitch of a plurality of spaced, adjacent line elements, and selecting a process monitor grating period that is an integer multiple M, greater than 1, of the minimum resolvable pitch. The method then includes designing a process monitor grating pattern having a plurality of adjacent sets of grouped line elements spaced from each other. Each set of grouped line elements is spaced from and parallel to an adjacent set of grouped line elements by the process monitor grating period, such that when the process monitor grating pattern is projected by the lithographic imaging system the line elements in each set are unresolvable from each other and Fourier coefficients of diffracted orders m created by the line elements in the range of 1<|m|?M are zero.

Abstract: A method for optimizing imaging and process parameter settings in a lithographic pattern imaging and processing system is disclosed. The method includes correlating the dimensions of a first set of at least one control pattern printed in a lithographic resist layer, measured at three or more locations on or within the pattern which correspond to differing dose, defocus and blur sensitivity. The method then includes measuring the dimensions on subsequent sets of control patterns, printed in a lithographic resist layer, at three or more locations on or within each pattern, of which a minimum of three locations match those measured in the first set, and determining the effective dose, defocus and blur values associated with forming the subsequent sets of control patterns by comparing the dimensions at the matching locations with the correlated dependencies. A method for determining blur, focus and exposure dose error in lithographic imaging is also disclosed.

Abstract: A method for forming a self-aligned pattern on an existing pattern on a substrate comprising applying a coating of a solution containing a masking material in a carrier, the masking material being either photo or thermally sensitive; performing a blanket exposure of the substrate; and allowing at least a portion of the masking material to preferential develop in a fashion that is replicates the existing pattern of the substrate. The existing pattern may be comprised of a first set of regions of the substrate having a first reflectivity and a second set of regions of the substrate having a second reflectivity different from the first composition. The first set of regions may include one or more metal elements and the second set of regions may include a dielectric. Structures made in accordance with the method.

Abstract: An optical pellicle to protect a photomask from particulate contamination during semiconductor lithography is provided which has enhanced transparency and operational characteristics. The pellicle utilizes alternating layers of a transparent polymer and a transparent inorganic layer to form pellicles which have high transmission properties and high strength. In a preferred pellicle, a three-layer pellicle is provided having a transparent inorganic layer sandwiched between two polymer layers. A five-layer pellicle is also provided with the outer layers and a middle layer being polymer layers and the inner layers an inorganic material. The preferred polymer layer is a perfluorinated polymer such as Teflon® and the preferred inorganic material is silicon dioxide. The pellicle of the invention provides light transmission of greater than 0.99% at incident light angles up to arcsine 0.45.

Abstract: An optical pellicle to protect a photomask from particulate contamination during semiconductor lithography is provided which has enhanced transparency and operational characteristics. The pellicle utilizes alternating layers of a transparent polymer and a transparent inorganic layer to form pellicles which have high transmission properties and high strength. In a preferred pellicle, a three-layer pellicle is provided having a transparent inorganic layer sandwiched between two polymer layers. A five-layer pellicle is also provided with the outer layers and a middle layer being polymer layers and the inner layers an inorganic material. The preferred polymer layer is a perfluorinated polymer such as Teflon® and the preferred inorganic material is silicon dioxide. The pellicle of the invention provides light transmission of greater than 0.99% at incident light angles up to arcsine 0.45.

Abstract: A method for forming a self-aligned pattern on an existing pattern on a substrate comprising applying a coating of a solution containing a masking material in a carrier, the masking material being either photo or thermally sensitive; performing a blanket exposure of the substrate; and allowing at least a portion of the masking material to preferential develop in a fashion that is replicates the existing pattern of the substrate. The existing pattern may be comprised of a first set of regions of the substrate having a first reflectivity and a second set of regions of the substrate having a second reflectivity different from the first composition. The first set of regions may include one or more metal elements and the second set of regions may include a dielectric. Structures made in accordance with the method.

Abstract: A method of making a process monitor grating pattern for use in a lithographic imaging system comprises determining minimum resolvable pitch of a plurality of spaced, adjacent line elements, and selecting a process monitor grating period that is an integer multiple M, greater than 1, of the minimum resolvable pitch. The method then includes designing a process monitor grating pattern having a plurality of adjacent sets of grouped line elements spaced from each other. Each set of grouped line elements is spaced from and parallel to an adjacent set of grouped line elements by the process monitor grating period, such that when the process monitor grating pattern is projected by the lithographic imaging system the line elements in each set are unresolvable from each other and Fourier coefficients of diffracted orders m created by the line elements in the range of 1<|m|?M are zero.

Abstract: A method for determining an image of a patterned object formed by a polychromatic lithographic projection system having a laser radiation source of a finite spectral bandwidth and a lens for imaging the patterned object to an image plane within a resist layer. The method comprises providing patterns for the object, a spectrum of the radiation source to be used in the lithographic projection system, an intensity and polarization distribution of the radiation source, and a lens impulse response in the spatial domain or in the spatial frequency domain of the image. The method then includes forming a polychromatic 4D bilinear vector kernel comprising a partially coherent polychromatic joint response between pairs of points in the spatial domain or in the spatial frequency domain, determining the dominant polychromatic 2D kernels of the polychromatic 4D bilinear vector kernel, and determining the image of the patterned object from convolutions of the object patterns with the dominant polychromatic 2D kernels.

Abstract: A method of forming a planar CMOS transistor divides the step of forming the gate layer into a first step of patterning a resist layer with a first portion of the gate layer pattern and then etching the polysilicon with the pattern of the gates. A second step patterns a second resist layer with the image of the gate pads and local interconnect and then etching the polysilicon with the pattern of the gate pads and local interconnect, thereby reducing the number of diffraction and other cross-talk from different exposed areas.

Abstract: A phase metrology pattern for attenuating phase masks. The phase error of this pattern can be determined to high accuracy by aerial image measurements. This pattern can be used to create an optical phase standard for calibrating phase metrology equipment for attenuated phase masks, or as a witness pattern on a product mask to verify the phase accuracy of that mask. The pattern includes an effective line to space ratio and can be tested using a microscope or stepper system or can be measured directly using a detector for the 0 order diffraction measurement.

Abstract: A method and structure for an integrated via and line lithography followed by integrated via and line etch. A two-layered, negative resist based lithography is used to generate a dual damascene structure in the photoresist which is subsequently transferred into the underlying ILD using an lithography with an integrated RIE. A method is also provided to correct any misalignment between the via and trench during photolithography steps which would reduce the size of the via opening and impact the via resistance.

Abstract: A method for optimizing imaging and process parameter settings in a lithographic pattern imaging and processing system. The method includes correlating the dimensions of a first set of at least one control pattern printed in a lithographic resist layer, measured at three or more locations on or within the pattern which correspond to differing dose, defocus and blur sensitivity. The method then includes measuring the dimensions on subsequent sets of control patterns, printed in a lithographic resist layer, at three or more locations on or within each pattern, of which a minimum of three locations match those measured in the first set, and determining the effective dose, defocus and blur values associated with forming the subsequent sets of control patterns by comparing the dimensions at the matching locations with the correlated dependencies.

Abstract: A radiation-sensitive composition (and method of fabricating a device using the composition) includes a nonpolymeric silsesquioxane including at least one acid labile moiety, a polymer including at least one member selected from the group consisting of an aqueous base soluble moiety and an acid labile moiety, and a radiation-sensitive acid generator. Another radiation-senstive composition (and method of fabricating a device using the composition) includes a nonpolymerc silsesquioxane including at least one aqueous base soluble moiety, a polymer including an aqueous base soluble moiety, a crosslinker, and a radiation-sensitive acid generator.

Abstract: A method for inspecting masks used to project patterns in photolithographic imaging comprises initially providing a photolithographic mask having a pattern field thereon, where in normal production use the pattern is transferred by a reduction projector as a demagnified pattern on a production substrate, and providing a movable field-defining aperture adjacent the mask, the aperture having a field area less than, and capable of defining a pattern subfield comprising only a portion of the entire photolithographic mask pattern field. The method then includes aligning the field-defining aperture with a pattern subfield comprising only a portion of the entire photolithographic mask pattern field. Using an energy source, the method includes projecting the pattern subfield onto a test substrate and exposing onto the test substrate the pattern subfield at a size between that normally exposed on a production substrate and the actual size of the pattern subfield on the photolithographic mask.

Abstract: A metrology target mask includes a first array of spaced, substantially parallel elements having essentially the same length and width. Ends of the individual elements are aligned to form opposing array edges. The target mask also includes a second array of elements comprising a central element having a length and a width, and a plurality of spaced, substantially parallel outer elements having a length and a width. The width of the outer elements is less than the width of the central element, with edges of outer elements on each side of and farthest from the central element forming opposing array edges. The pitch of the outer elements is selected such that the outer elements are not resolvable after lithographic printing. After printing, the first array is sensitive to both dose and focus, and the second array is sensitive to dose but not focus, of the energy beam.

Abstract: A method for forming a self-aligned pattern on an existing pattern on a substrate comprising applying a coating of a solution containing a masking material in a carrier, the masking material being either photo or thermally sensitive; performing a blanket exposure of the substrate; and allowing at least a portion of the masking material to preferential develop in a fashion that is replicates the existing pattern of the substrate. The existing pattern may be comprised of a first set of regions of the substrate having a first reflectivity and a second set of regions of the substrate having a second reflectivity different from the first composition. The first set of regions may include one or more metal elements and the second set of regions may include a dielectric. Structures made in accordance with the method.

Abstract: A method is described for determining lens aberrations using a test reticle and a standard metrology tool. The method provides test patterns, preferably in the form of standard overlay metrology test patterns, that include blazed gratings having orientation and pitch selected to sample desired portions of the lens pupil. The method measures relative shifts in the imaged test patterns using standard metrology tools to provide both magnitude and sign of the aberrations. The metrology tools need not be modified if standard test patterns are used, but can be adapted to obtain additional information. The test reticles may be formed with multiple test patterns having a range of orientations and pitch in order to compute any desired order of lens aberration. Alternatively, single test patterns may be used to determine both the magnitude and sign of lower order lens aberrations, such as defocus or coma.