Abstract: A circuitized substrate and a method of making the circuitized substrate are provided. The circuitized substrate includes a substrate having a conductive pad thereon. A first layer of solder enhancing material is positioned on the conductive pad, the first layer of solder enhancing material includes a first region and a second region positioned relative to the first region. A solder member is positioned on the first region of the first layer of solder enhancing material. A second layer of solder enhancing material is positioned on the solder member and on a portion of the second region of the first layer of solder enhancing material. The circuitized substrate may be used in the fabrication of an electronic package.

Abstract: A circuitized substrate and a method of making the circuitized substrate are provided. The circuitized substrate includes a substrate having a conductive pad thereon. A first layer of solder enhancing material is positioned on the conductive pad, the first layer of solder enhancing material includes a first region and a second region positioned relative to the first region. A solder member is positioned on the first region of the first layer of solder enhancing material. A second layer of solder enhancing material is positioned on the solder member and on a portion of the second region of the first layer of solder enhancing material. The circuitized substrate may be used in the fabrication of an electronic package.

Abstract: A circuitized substrate and a method of making the circuitized substrate are provided. The circuitized substrate includes a substrate having a conductive pad thereon. A first layer of solder enhancing material is positioned on the conductive pad, the first layer of solder enhancing material includes a first region and a second region positioned relative to the first region. A solder member is positioned on the first region of the first layer of solder enhancing material. A second layer of solder enhancing material is positioned on the solder member and on a portion of the second region of the first layer of solder enhancing material. The circuitized substrate may be used in the fabrication of an electronic package.

Abstract: The present invention is directed to soldering techniques and compositions for use therein. In one aspect, a flux composition is provided. The flux composition comprises a fluxing agent comprising organic acid, an organic tacking agent and an organic wetting agent. In another aspect, a soldering method for joining objects is provided comprising the following steps. A flux composition and a solder compound are applied to at least a portion of one or more of the objects. The flux composition comprises a fluxing agent comprising organic acid, an organic tacking agent and an organic wetting agent. The objects are then joined.

Abstract: A circuitized substrate and a method of making the circuitized substrate are provided. The circuitized substrate includes a substrate having a conductive pad thereon. A first layer of solder enhancing material is positioned on the conductive pad, the first layer of solder enhancing material includes a first region and a second region positioned relative to the first region. A solder member is positioned on the first region of the first layer of solder enhancing material. A second layer of solder enhancing material is positioned on the solder member and on a portion of the second region of the first layer of solder enhancing material. The circuitized substrate may be used in the fabrication of an electronic package.

Abstract: A circuitized substrate and a method of making the circuitized substrate is provided. The circuitized substrate includes a substrate having a conductive pad thereon. A first layer of solder enhancing material is positioned on the conductive pad, the first layer of solder enhancing material includes a first region and a second region positioned relative to the first region. A solder member is positioned on the first region of the first layer of solder enhancing material. A second layer of solder enhancing material is positioned on the solder member and on a portion of the second region of the first layer of solder enhancing material. The circuitized substrate may be used in the fabrication of an electronic package.

Abstract: A solder composition and associated method of formation. The solder composition comprises a substantially lead-free alloy that includes tin (Sn), silver (Ag), and copper. The tin has a weight percent concentration in the alloy of at least about 90%. The silver has a weight percent concentration X in the alloy. X is sufficiently small that formation of Ag3Sn plates is substantially suppressed when the alloy in a liquefied state is being solidified by being cooled to a lower temperature at which the solid Sn phase is nucleated. This lower temperature corresponds to an undercooling &dgr;T relative to the eutectic melting temperature of the alloy. Alternatively, X may be about 4.0% or less, wherein the liquefied alloy is cooled at a cooling rate that is high enough to substantially suppress Ag3Sn plate formation in the alloy. The copper has a weight percent concentration in the alloy not exceeding about 1.5%.

Abstract: A circuitized substrate and a method of making the circuitized substrate is provided. The circuitized substrate includes a substrate having a conductive pad thereon. A first layer of solder enhancing material is positioned on the conductive pad, the first layer of solder enhancing material includes a first region and a second region positioned relative to the first region. A solder member is positioned on the first region of the first layer of solder enhancing material. A second layer of solder enhancing material is positioned on the solder member and on a portion of the second region of the first layer of solder enhancing material. The circuitized substrate may be used in the fabrication of an electronic package.

Abstract: A solder composition and associated method of formation. The solder composition comprises a substantially lead-free alloy that includes tin (Sn), silver (Ag), and copper. The tin has a weight percent concentration in the alloy of at least about 90%. The silver has a weight percent concentration X in the alloy. X is sufficiently small that formation of Ag3Sn plates is substantially suppressed when the alloy in a liquefied state is being solidified by being cooled to a lower temperature at which the solid Sn phase is nucleated. This lower temperature corresponds to an undercooling &dgr;T relative to the eutectic melting temperature of the alloy. Alternatively, X may be about 4.0% or less, wherein the liquefied alloy is cooled at a cooling rate that is high enough to substantially suppress Ag3Sn plate formation in the alloy. The copper has a weight percent concentration in the alloy not exceeding about 1.5%.