Patents by Inventor Timothy Henderson

Timothy Henderson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8193609
    Abstract: A heterojunction bipolar transistor (HBT) device and system having electrostatic discharge ruggedness, and methods for making the same, are disclosed. An HBT device having electrostatic discharge ruggedness may include one or more emitter fingers including an emitter layer, a transition layer formed over the emitter layer, and an emitter cap layer formed over the transition layer.
    Type: Grant
    Filed: May 15, 2008
    Date of Patent: June 5, 2012
    Assignee: TriQuint Semiconductor, Inc.
    Inventors: Timothy Henderson, Jeremy Middleton, John Hitt
  • Publication number: 20110172950
    Abstract: In one embodiment, a system for providing fault-tolerant inertial measurement data includes a sensor for measuring an inertial parameter and a processor. The sensor has less accuracy than a typical inertial measurement unit (IMU). The processor detects whether a difference exists between a first data stream received from a first inertial measurement unit and a second data stream received from a second inertial measurement unit. Upon detecting a difference, the processor determines whether at least one of the first or second inertial measurement units has failed by comparing each of the first and second data streams to the inertial parameter.
    Type: Application
    Filed: January 14, 2010
    Publication date: July 14, 2011
    Inventors: Tye Brady, Timothy Henderson, Richard Phillips, Doug Zimpfer, Tim Crain
  • Patent number: 7977708
    Abstract: A co-integrated HBT/FET apparatus and system, and methods for making the same, are disclosed. A co-integrated HBT/FET apparatus may include a first epitaxial structure formed over a substrate, the first epitaxial structure forming, at least in part, a FET device, a separation layer formed over the first epitaxial structure, and a second epitaxial structure formed over the separation layer, the second epitaxial structure forming, at least in part, a heterojunction bipolar transistor (HBT) device.
    Type: Grant
    Filed: November 15, 2007
    Date of Patent: July 12, 2011
    Assignee: Triquint Semiconductor, Inc.
    Inventors: Timothy Henderson, Jeremy Middleton, Sumir Varma, Corey Jordan, Gerard Mahoney, Bradley Avrit, Lucius Rivers
  • Publication number: 20090283802
    Abstract: A heterojunction bipolar transistor (HBT) device and system having electrostatic discharge ruggedness, and methods for making the same, are disclosed. An HBT device having electrostatic discharge ruggedness may include one or more emitter fingers including an emitter layer, a transition layer formed over the emitter layer, and an emitter cap layer formed over the transition layer.
    Type: Application
    Filed: May 15, 2008
    Publication date: November 19, 2009
    Applicant: TRIQUINT SEMICONDUCTOR, INC.
    Inventors: Timothy Henderson, Jeremy Middleton, John Hitt
  • Publication number: 20070181487
    Abstract: A valve failure protection device is provided for use in a fluid filter element of the type that includes a filter media that defines an inner passage having first and second ends and a bypass assembly positioned in the second flow path for selectively permitting flow through the first end and the inner passage to the second end. The valve failure protection device includes a perforated safety barrier adapted to be positioned in the inner passage downstream of the bypass assembly. The safety barrier is dimensioned to prevent the bypass assembly or pieces thereof from passing therethrough while permitting the flow of fluid along the inner passage to the second end.
    Type: Application
    Filed: January 4, 2007
    Publication date: August 9, 2007
    Inventor: Timothy Henderson