Abstract: Embodiments of the present disclosure generally relate to a substrate processing chamber, and components thereof, for forming semiconductor devices. The processing chamber comprises a substrate support, and an edge ring is disposed around the substrate support. The edge ring comprises a material selected from the group consisting of quartz, silicon, cross-linked polystyrene and divinylbenzene, polyether ether ketone, Al2O3, and AlN. The material of the edge ring is selected to modulate the properties of hardmask films deposited on substrates in the processing chamber. As such, hardmask films having desired film properties can be deposited in the processing chamber without scaling up the RF power to the chamber.

Abstract: Embodiments of the present disclosure generally relate to a substrate processing chamber, and components thereof, for forming semiconductor devices. The processing chamber comprises a substrate support, and an edge ring is disposed around the substrate support. The edge ring comprises a material selected from the group consisting of quartz, silicon, cross-linked polystyrene and divinylbenzene, polyether ether ketone, Al2O3, and AlN. The material of the edge ring is selected to modulate the properties of hardmask films deposited on substrates in the processing chamber. As such, hardmask films having desired film properties can be deposited in the processing chamber without scaling up the RF power to the chamber.

Abstract: Apparatuses for annealing semiconductor substrates, such as a batch processing chamber, are provided herein. The batch processing chamber includes a chamber body enclosing an internal volume, a cassette moveably disposed within the internal volume and a plug coupled to a bottom wall of the cassette. The chamber body has a hole through a bottom wall of the chamber body and is interfaced with one or more heaters operable to maintain the chamber body at a temperature of greater than 290° C. The cassette is configured to be raised to load a plurality of substrates thereon and lowered to seal the internal volume. The plug is configured to move up and down within the internal volume. The plug includes a downward-facing seal configured to engage with a top surface of the bottom wall of the chamber body and close the hole through the bottom wall of the chamber body.

Abstract: A method for cleaning one or more interior surfaces of a processing chamber includes removing a processed substrate from the processing chamber, and introducing a first cleaning chemistry into the processing chamber to generate a first internal pressure of greater than 1.1 atm within the processing chamber and remove deposited contaminants from the one or more interior surfaces of the processing chamber. The method further comprises removing the cleaning chemistry from the processing chamber.

Abstract: Apparatuses for annealing semiconductor substrates, such as a batch processing chamber, are provided herein. The batch processing chamber includes a chamber body enclosing an internal volume, a cassette moveably disposed within the internal volume and a plug coupled to a bottom wall of the cassette. The chamber body has a hole through a bottom wall of the chamber body and is interfaced with one or more heaters operable to maintain the chamber body at a temperature of greater than 290° C. The cassette is configured to be raised to load a plurality of substrates thereon and lowered to seal the internal volume. The plug is configured to move up and down within the internal volume. The plug includes a downward-facing seal configured to engage with a top surface of the bottom wall of the chamber body and close the hole through the bottom wall of the chamber body.

Abstract: Embodiments of the disclosure generally relate to a method and apparatus for filling gaps and trenches on a substrate and tools for batch annealing substrates. In one embodiment, a batch processing chamber comprising a lower shell, a substrate transfer port formed through the lower shell, an upper shell disposed on the lower shell, an inner shell disposed within the upper shell, a heater operational to heat the inner shell, a lift plate moveably disposed within the lower shell, a cassette disposed on the lift plate and configured to hold a plurality of substrates within the inner chamber, and an injection port, is disclosed. The inner shell and upper shell bound an outer chamber while the inner shell and the lower shell bound an inner chamber that is partially enveloped by the outer chamber. The injection port is configured to introduce a fluid into the inner chamber.

Abstract: Embodiments include a real time etch rate sensor and methods of for using a real time etch rate sensor. In an embodiment, the real time etch rate sensor includes a resonant system and a conductive housing. The resonant system may include a resonating body, a first electrode formed over a first surface of the resonating body, a second electrode formed over a second surface of the resonating body, and a sacrificial layer formed over the first electrode. In an embodiment, at least a portion of the first electrode is not covered by the sacrificial layer. In an embodiment, the conductive housing may secure the resonant system. Additionally, the conductive housing contacts the first electrode, and at least a portion of an interior edge of the conductive housing may be spaced away from the sacrificial layer.

Abstract: In one aspect, a substrate processing apparatus is provided. The apparatus comprises a mechanism for forming a meniscus on a surface of a substrate by moving the substrate through a fluid; an air knife apparatus positioned to apply an air knife to shorten the meniscus formed on the surface of the substrate; and a drying vapor nozzle positioned to direct a drying vapor to the meniscus shortened by the air knife. Numerous other aspects are provided.

Abstract: A carrier for effectuating semiconductor processing on a non-planar substrate is disclosed. The carrier is configured for holding at least one non-planar substrate throughout a semiconductor processing step and concurrently rotating non-planar substrates as they travel down a translational path of a processing chamber. As the non-planar substrates simultaneously rotate and translate down a processing chamber, the rotation exposes the whole or any desired portion of the surface area of the non-planar substrates to the deposition process, allowing for uniform deposition as desired. Alternatively, any predetermined pattern is able to be exposed on the surface of the non-planar substrates. Such a carrier effectuates manufacture of non-planar semiconductor devices, including, but not limited to, non-planar light emitting diodes, non-planar photovoltaic cells, and the like.

Abstract: Systems having an in-line microwave heater to heat fluids for processing a substrate are provided. An embodiment of a system includes a microelectronic processing chamber, a reservoir for storing a fluid used to process wafers within the chamber, a supply line for transporting the fluid to the chamber, and a microwave heater arranged along the supply line. The system includes processor executable program instructions for operating the microwave heater at parameters configured to heat fluid within the supply line to a temperature greater than a fluid temperature within the reservoir, such as approximately 20° C. greater than the reservoir fluid temperature. It is noted that the inclusion of an in-line microwave heater is not limited to microelectronic fabrication systems, but may be used for any system in which heated fluids are used for processing a substrate, such as but not limited to electroplating or electroless plating systems.

Abstract: A carrier for effectuating semiconductor processing on a non-planar substrate is disclosed. The carrier is configured for holding at least one non-planar substrate throughout a semiconductor processing step and concurrently rotating non-planar substrates as they travel down a translational path of a processing chamber. As the non-planar substrates simultaneously rotate and translate down a processing chamber, the rotation exposes the whole or any desired portion of the surface area of the non-planar substrates to the deposition process, allowing for uniform deposition as desired. Alternatively, any predetermined pattern is able to be exposed on the surface of the non-planar substrates. Such a carrier effectuates manufacture of non-planar semiconductor devices, including, but not limited to, non-planar light emitting diodes, non-planar photovoltaic cells, and the like.

Abstract: In one aspect, an apparatus is provided. The apparatus comprises a chamber; a plurality of rollers adapted to support a wafer in a vertical orientation within a chamber; a pair of brushes adapted to scrub a first and a second side of the wafer respectively; a first spray bar adapted to spray a liquid on the wafer to form a meniscus on the wafer as the wafer is lifted out of the chamber; and a second spray bar adapted to direct a vapor to the meniscus, the vapor being adapted to lower a surface tension of the liquid at the meniscus to perform Marangoni drying of the wafer as the wafer is lifted out of the chamber. Numerous other aspects are provided.

Abstract: In one aspect, a substrate processing apparatus is provided. The apparatus comprises a mechanism for forming a meniscus on a surface of a substrate by moving the substrate through a fluid; an air knife apparatus positioned to apply an air knife to shorten the meniscus formed on the surface of the substrate; and a drying vapor nozzle positioned to direct a drying vapor to the meniscus shortened by the air knife. Numerous other aspects are provided.

Abstract: In one aspect, a method is provided. The method comprises forming a meniscus at an interface between a substrate and a fluid surface by moving the substrate through the fluid; shortening the meniscus by applying an air knife to the meniscus at the interface between the substrate and the fluid surface; and Marangoni drying the substrate by applying a drying vapor to the shortened meniscus. Numerous other aspects are provided.

Abstract: A carrier for effectuating semiconductor processing on a non-planar substrate is disclosed. The carrier is configured for holding at least one non-planar substrate throughout a semiconductor processing step and concurrently rotating non-planar substrates as they travel down a translational path of a processing chamber. As the non-planar substrates simultaneously rotate and translate down a processing chamber, the rotation exposes the whole or any desired portion of the surface area of the non-planar substrates to the deposition process, allowing for uniform deposition as desired. Alternatively, any predetermined pattern is able to be exposed on the surface of the non-planar substrates. Such a carrier effectuates manufacture of non-planar semiconductor devices, including, but not limited to, non-planar light emitting diodes, non-planar photovoltaic cells, and the like.

Abstract: A stable platform supports a cell, the stable platform comprises a lower mainframe, an upper mainframe, and a dampener system. The upper mainframe includes a plurality of recesses. Each recess is configured to receive a cell. The dampener system connects the lower mainframe to the upper mainframe. In one embodiment, the dampener system comprises a dampener element, such as sand, to dampen vibrations between the lower mainframe and the lower mainframe.

Abstract: A method and apparatus for supporting a web of polishing material are generally provided. In one embodiment, an apparatus for supporting a web of polishing material includes a web of polishing media having a first portion disposed across a support surface of a platen assembly and a second portion wound on a first roll coupled to the platen assembly. A tensioning mechanism is coupled to the platen assembly and adapted to tension the web of polishing media in response to a diameter of the second portion of the web of polishing material wound on the first roll.

Abstract: In one aspect, a method of drying a substrate includes (1) setting a gas delivery angle for an air knife used during an immersion-drying process; (2) using the air knife during immersion drying of a hydrophilic substrate; and (3) using the air knife during immersion drying of a hydrophobic substrate. The gas delivery angle is unchanged during immersion drying of both the hydrophilic substrate and hydrophobic substrate. Numerous other aspects are provided.

Abstract: The present invention provides an apparatus and associated method in which the apparatus comprises a multiple blade robot and a compensating device. The multiple blade robot includes at least one set of robot blades. The compensating device adjusts for differences in spacing between the set of robot blades and spacing between two or more cells. In different embodiments, the compensating device may be coupled to one or more of the process cells, one or more of the substrate holder systems, or one or more of the robot blades.

Abstract: A chamber for transferring a substrate is provided. In one embodiment, a chamber for transferring a substrate includes at least one side wall supporting a lid and coupled to a chamber bottom. The side wall, lid and chamber bottom defining an evacuable volume therebetween. A passage is disposed at least partially through the side wall and chamber bottom. The passage has a first end that is disposed in the side wall and is exposed to the evacuable volume. The passage has a second end that is disposed on an exterior side of the chamber bottom. The passage may be utilized as a pumping port when coupled to a pumping system at the second end of the passage. Additionally, the port may be utilized as a sensor housing to shield the sensor from objects within the transfer chamber.