Abstract: A CVD reactor for single sided deposition of material on substrates, may comprise: an upper gas manifold and a lower gas manifold; a substrate carrier comprising a gas tight rectangular box open on upper and lower surfaces, a multiplicity of planar walls across the width of the box, the walls being equally spaced in a row facing each other and defining a row of channels within the box, the walls comprising mounting fixtures for a plurality of substrates and at least one electrically resistive heater element; and clamps within the vacuum chamber for making electrical contact to the at least one electrically resistive heater element; wherein the upper gas manifold and the lower gas manifold are configured to attach to the upper and lower surfaces of the substrate carrier, respectively, connect with upper and lower ends of the channels, and isolate gas flows in odd numbered channels from gas flows in even numbered channels, wherein the channels are numbered in order along the row, and wherein the gas flows compr

Abstract: A CVD reactor for single sided deposition of material on substrates, may comprise: an upper gas manifold and a lower gas manifold; a substrate carrier comprising a gas tight rectangular box open on upper and lower surfaces, a multiplicity of planar walls across the width of the box, the walls being equally spaced in a row facing each other and defining a row of channels within the box, the walls comprising mounting fixtures for a plurality of substrates and at least one electrically resistive heater element; and clamps within the vacuum chamber for making electrical contact to the at least one electrically resistive heater element; wherein the upper gas manifold and the lower gas manifold are configured to attach to the upper and lower surfaces of the substrate carrier, respectively, connect with upper and lower ends of the channels, and isolate gas flows in odd numbered channels from gas flows in even numbered channels, wherein the channels are numbered in order along the row, and wherein the gas flows compr

Abstract: A CVD reactor for depositing material on substrates may comprise: a vacuum chamber; at least two substrate carriers arranged in parallel in a row within the vacuum chamber, each of the at least two substrate carriers comprising mounting positions for a plurality of substrates, the mounting positions being on the walls of channels configured for flowing process gases, the channels being in parallel planes within all of the at least two substrate carriers; a planar electrically resistive heater between every two adjacent substrate carriers in the row; and planar heaters at both ends of the row. Furthermore, CVD reactor chambers with three channel substrate carriers and/or gas preheat structure are described herein.