CVD EPITAXIAL REACTOR CHAMBER WITH RESISTIVE HEATING, THREE CHANNEL SUBSTRATE CARRIER AND GAS PREHEAT STRUCTURE
A CVD reactor for depositing material on substrates may comprise: a vacuum chamber; at least two substrate carriers arranged in parallel in a row within the vacuum chamber, each of the at least two substrate carriers comprising mounting positions for a plurality of substrates, the mounting positions being on the walls of channels configured for flowing process gases, the channels being in parallel planes within all of the at least two substrate carriers; a planar electrically resistive heater between every two adjacent substrate carriers in the row; and planar heaters at both ends of the row. Furthermore, CVD reactor chambers with three channel substrate carriers and/or gas preheat structure are described herein.
This application claims the benefit of U.S. Provisional Application No. 62/011,549 filed Jun. 12, 2014, incorporated by reference in its entirety herein.
FIELD OF THE INVENTIONThe present invention relates generally to CVD (chemical vapor deposition) epitaxial reactors, including, although not limited to, CVD reactor chambers with resistive heating, three channel substrate carriers and/or gas preheat structures.
BACKGROUNDThere is a need for tools and methods for efficient and low cost chemical vapor deposition (CVD) of epitaxial single crystal silicon.
SUMMARY OF THE INVENTIONAccording to some embodiments, a CVD reactor for depositing material on substrates may comprise: a vacuum chamber; at least two substrate carriers arranged in parallel in a row within the vacuum chamber, each of the at least two substrate carriers comprising mounting positions for a plurality of substrates, the mounting positions being on the walls of channels configured for flowing process gases, the channels being in parallel planes within all of the at least two substrate carriers; a planar electrically resistive heater between every two adjacent substrate carriers in the row; and planar heaters at both ends of the row. Furthermore, the planar heaters may be lamp heaters and the lamp heaters may be mounted externally on the vacuum chamber. Furthermore, the planar heaters may be planar electrically resistive heaters and the planar heaters may be mounted within the vacuum chamber.
According to some embodiments, a substrate carrier for holding substrates in a CVD reactor may comprise: mounting positions for a plurality of substrates, the mounting positions being on the walls of three channels configured for flowing process gases, the channels being in parallel planes within the substrate carrier; and two gas preheat modules, a first of the two gas preheat modules being coupled to first ends of the three channels and a second of the two gas preheat modules being coupled to second ends of the three channels; wherein mounting positions on the walls of the center of the three channels are positioned further from the proximate of the two gas preheat modules than the mounting positions on the walls of the outer two of the three channels.
According to some embodiments, a CVD reactor for depositing material on substrates may comprise: a gas manifold; a substrate carrier mated to the gas manifold, the substrate carrier comprising a process gas preheat module, the process gas preheat module comprising an outer portion with a tortuous channel therein, an inner portion with a substantially straight channel therein, and a gas mixing chamber, wherein the tortuous channel connects an intake port of a first process gas to the mixing chamber and the substantially straight channel connects an intake port of a second process gas to the mixing chamber; and a heater external to the gas preheat module and adjacent to the outer portion.
According to some embodiments, a method of operating a CVD reactor may comprise: flowing a first process gas from a first intake port of a gas manifold through a tortuous channel in an outer portion of a process gas preheat module into a mixing chamber; while flowing the first process gas, flowing a second process gas from a second intake port of the gas manifold through a substantially straight channel in an inner portion of the process gas preheat module into the mixing chamber; while flowing the first process gas and the second process gas, heating the gas preheat module with a heater external to the gas preheat module and adjacent to the outer portion; flowing a mixture of the first process gas and the second process gas from the mixing chamber through channels lined with a plurality of substrates and depositing material on the exposed surfaces of the plurality of substrates.
These and other aspects and features of the present invention will become apparent to those ordinarily skilled in the art upon review of the following description of specific embodiments of the invention in conjunction with the accompanying figures, wherein:
Embodiments of the present invention will now be described in detail with reference to the drawings, which are provided as illustrative examples of the invention so as to enable those skilled in the art to practice the invention. Notably, the figures and examples below are not meant to limit the scope of the present invention to a single embodiment, but other embodiments are possible by way of interchange of some or all of the described or illustrated elements. Moreover, where certain elements of the present invention can be partially or fully implemented using known components, only those portions of such known components that are necessary for an understanding of the present invention will be described, and detailed descriptions of other portions of such known components will be omitted so as not to obscure the invention. In the present specification, an embodiment showing a singular component should not be considered limiting; rather, the invention is intended to encompass other embodiments including a plurality of the same component, and vice-versa, unless explicitly stated otherwise herein. Moreover, applicants do not intend for any term in the specification or claims to be ascribed an uncommon or special meaning unless explicitly set forth as such. Further, the present invention encompasses present and future known equivalents to the known components referred to herein by way of illustration.
The present disclosure describes modifications to the general CVD epitaxial reactor designs described in Pat. Appl. Publ. Nos. US 2010/0215872, US 2010/0263587 and US 2013/0032084, all incorporated by reference in their entirety herein. It is desired to increase the number of substrates that may be simultaneously processed in a CVD epitaxial reactor—for example, for epitaxial silicon deposition on single crystal silicon substrates.
Furthermore, the general configuration of
Furthermore, in order to simultaneously process large numbers of substrates in the epitaxial CVD reactors described herein, and described in Pat. Appl. Publ. Nos. US 2010/0215872, US 2010/0263587 and US 2013/0032084, all incorporated by reference in their entirety herein, in some embodiments a substrate carrier with three or more channels may be utilized. However, controlling the process gas temperature within the carrier becomes more challenging as the number of channels and thus the thickness of the substrate carrier increases, considering that the temperature is controlled by the lamp/electrically resistive heaters which are external to the substrate carriers as shown in
Furthermore, as shown above in
Furthermore, as shown in
The substrate carriers of
Furthermore,
Furthermore, another example of process chemicals that can be used in the preheat module of
A method of operating a CVD reactor may comprise: flowing a first process gas from a first intake port of a gas manifold through a tortuous channel in an outer portion of a process gas preheat module into a mixing chamber; while flowing the first process gas, flowing a second process gas from a second intake port of the gas manifold through a substantially straight channel in an inner portion of the process gas preheat module into the mixing chamber; while flowing the first process gas and the second process gas, heating the gas preheat module with a heater external to the gas preheat module and adjacent to the outer portion; flowing a mixture of the first process gas and the second process gas from the mixing chamber through channels lined with a plurality of substrates and depositing material on the exposed surfaces of the plurality of substrates.
Although embodiments of the present disclosure have been particularly described with reference to certain embodiments thereof, it should be readily apparent to those of ordinary skill in the art that changes and modifications in the form and details may be made without departing from the spirit and scope of the disclosure.
Claims
1. A CVD reactor for depositing material on substrates, comprising:
- a vacuum chamber;
- at least two substrate carriers arranged in parallel in a row within said vacuum chamber, each of said at least two substrate carriers comprising mounting positions for a plurality of substrates, said mounting positions being on the walls of channels configured for flowing process gases, said channels being in parallel planes within all of said at least two substrate carriers;
- a planar electrically resistive heater between every two adjacent substrate carriers in said row; and
- planar heaters at both ends of said row.
2. The CVD reactor of claim 1, wherein said planar heaters are lamp heaters and said lamp heaters are mounted externally on said vacuum chamber.
3. The CVD reactor of claim 1, wherein said planar heaters are planar electrically resistive heaters and said planar heaters are mounted within said vacuum chamber.
4. The CVD reactor of claim 1, wherein said planar electrically resistive heater comprises a plurality of electrically resistive heating elements, wherein each of said plurality of electrically resistive heating elements defines a separately controllable heating zone.
5. The CVD reactor of claim 1, wherein said planar electrically resistive heater comprises a linear electrically resistive heating element with more resistive portions configured to provide extra heat to end caps of said substrate carriers.
6. The CVD reactor of claim 1, wherein said planar electrically resistive heater comprises silicon carbide coated graphite elements.
7. The CVD reactor of claim 1, wherein said material is epitaxial single crystal silicon and said substrates are single crystal silicon.
8. A substrate carrier for holding substrates in a CVD reactor, comprising:
- mounting positions for a plurality of substrates, said mounting positions being on the walls of three channels configured for flowing process gases, said channels being in parallel planes within said substrate carrier; and
- two gas preheat modules, a first of said two gas preheat modules being coupled to first ends of said three channels and a second of said two gas preheat modules being coupled to second ends of said three channels;
- wherein mounting positions on the walls of the center of said three channels are positioned further from the proximate of said two gas preheat modules than the mounting positions on the walls of the outer two of the three channels.
9. A CVD reactor for depositing material on substrates, comprising:
- a gas manifold;
- a substrate carrier mated to said gas manifold, said substrate carrier comprising a process gas preheat module, said process gas preheat module comprising: an outer portion with a tortuous channel therein; an inner portion with a substantially straight channel therein; and a gas mixing chamber, wherein said tortuous channel connects an intake port of a first process gas to said mixing chamber and said substantially straight channel connects an intake port of a second process gas to said mixing chamber; and
- a heater external to said gas preheat module and adjacent to said outer portion.
10. The CVD reactor of claim 9, wherein said first process gas is more thermally stable than said second process gas.
11. The CVD reactor of claim 9, wherein said first process gas is hydrogen and said second process gas is TCS.
12. The CVD reactor of claim 9, wherein said first process gas is argon and said second process gas is a mixture of TCS with at least one of methane and ethylene.
13. A method of operating a CVD reactor, comprising:
- flowing a first process gas from a first intake port of a gas manifold through a tortuous channel in an outer portion of a process gas preheat module into a mixing chamber;
- while flowing said first process gas, flowing a second process gas from a second intake port of said gas manifold through a substantially straight channel in an inner portion of said process gas preheat module into said mixing chamber;
- while flowing said first process gas and said second process gas, heating said gas preheat module with a heater external to said gas preheat module and adjacent to said outer portion;
- flowing a mixture of said first process gas and said second process gas from said mixing chamber through channels lined with a plurality of substrates and depositing material on the exposed surfaces of said plurality of substrates.
14. The method of claim 13, wherein said first process gas is more thermally stable than said second process gas.
15. The method of claim 13, wherein said first process gas is hydrogen and said second process gas is TCS.
16. The method of claim 13, wherein said first process gas is argon and said second process gas is a mixture of TCS with at least one of methane and ethylene.
Type: Application
Filed: Jun 12, 2015
Publication Date: Dec 17, 2015
Inventors: Visweswaren Sivaramakrishnan (Cupertino, CA), Quoc Vinh Truong (San Leandro, CA), Timothy N. Kleiner (Los Gatos, CA), Tirunelveli S. Ravi (Saratoga, CA)
Application Number: 14/738,777