Patents by Inventor Timothy P. Holme
Timothy P. Holme has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220328933Abstract: Provided herein are electrochemical cells having a solid separator, a lithium metal anode, and a positive electrode catholyte wherein the electrochemical cell includes a nitrile, dinitrile, or organic sulfur-including solvent and a lithium salt dissolved therein. Also set forth arc methods of making and using these electrochemical cells.Type: ApplicationFiled: April 21, 2022Publication date: October 13, 2022Inventors: Greg ROBERTS, Zhebo CHEN, Will HUDSON, Rainer FASCHING, Tiffany HO, Timothy P. HOLME, Mohit SINGH, Aram YANG
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Patent number: 11342630Abstract: Provided herein are electrochemical cells having a solid separator, a lithium metal anode, and a positive electrode catholyte wherein the electrochemical cell includes a nitrile, dinitrile, or organic sulfur-including solvent and a lithium salt dissolved therein. Also set forth are methods of making and using these electrochemical cells.Type: GrantFiled: August 29, 2017Date of Patent: May 24, 2022Assignee: QuantumScape Battery, Inc.Inventors: Greg Roberts, Zhebo Chen, Will Hudson, Rainer Fasching, Tiffany Ho, Timothy P. Holme, Mohit Singh, Aram Yang
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Patent number: 10056609Abstract: Solid state energy storage systems and devices are provided. A solid state energy storage devices can include an active layer disposed between conductive electrodes, the active layer having one or more quantum confinement species (QCS), such as quantum dots, quantum particles, quantum wells, nanoparticles, nanostructures, nanowires and nanofibers. The solid state energy storage device can have a charge rate of at least about 500 V/s and an energy storage density of at least about 150 Whr/kg.Type: GrantFiled: July 10, 2012Date of Patent: August 21, 2018Assignee: QuantumScape CorporationInventors: Timothy P. Holme, Rainer Fasching, Joseph Han, Weston Arthur Hermann, Friedrich B. Prinz, Phil Reilly, Jagdeep Singh
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Patent number: 9935208Abstract: High density energy storage in semiconductor devices is provided. There are two main aspects of the present approach. The first aspect is to provide high density energy storage in semiconductor devices based on formation of a plasma in the semiconductor. The second aspect is to provide high density energy storage based on charge separation in a p-n junction.Type: GrantFiled: March 3, 2016Date of Patent: April 3, 2018Assignee: The Board of Trustees of the Leland Stanford Junior UniversityInventors: Timothy P. Holme, Friedrich B. Prinz, Andrei T. Iancu
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Patent number: 9786905Abstract: Provided herein are energy storage device cathodes with high capacity electrochemically active material including compounds that include iron, fluorine, sulfur, and optionally oxygen. Batteries with active materials including a compound of the formula FeFaSbOc exhibit high capacity, high specific energy, high average discharge voltage, and low hysteresis, even when discharged at high rates. Iron, fluorine, and sulfur-containing compounds may be ionically and electronically conductive.Type: GrantFiled: March 12, 2014Date of Patent: October 10, 2017Assignee: QuantumScape CorporationInventors: Timothy P. Holme, Joseph Han, Weston Arthur Hermann, Rainer J. Fasching, Bradley O. Stimson, Cheng Chieh Chao
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Publication number: 20160204281Abstract: High density energy storage in semiconductor devices is provided. There are two main aspects of the present approach. The first aspect is to provide high density energy storage in semiconductor devices based on formation of a plasma in the semiconductor. The second aspect is to provide high density energy storage based on charge separation in a p-n junction.Type: ApplicationFiled: March 3, 2016Publication date: July 14, 2016Inventors: Timothy P. Holme, Friedrich B. Prinz, Andrei T. Iancu
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Patent number: 9312398Abstract: High density energy storage in semiconductor devices is provided. There are two main aspects of the present approach. The first aspect is to provide high density energy storage in semiconductor devices based on formation of a plasma in the semiconductor. The second aspect is to provide high density energy storage based on charge separation in a p-n junction.Type: GrantFiled: July 13, 2011Date of Patent: April 12, 2016Assignee: The Board of Trustees of the Leland Stanford Junior UniversityInventors: Timothy P. Holme, Friedrich B. Prinz, Andrei Iancu
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Publication number: 20140363740Abstract: Solid state energy storage systems and devices are provided. A solid state energy storage devices can include an active layer disposed between conductive electrodes, the active layer having one or more quantum confinement species (QCS), such as quantum dots, quantum particles, quantum wells, nanoparticles, nanostructures, nanowires and nanofibers. The solid state energy storage device can have a charge rate of at least about 500 V/s and an energy storage density of at least about 150 Whr/kg.Type: ApplicationFiled: July 10, 2012Publication date: December 11, 2014Applicant: QUANTUMSCAPE CORPORATIONInventors: Timothy P. Holme, Rainer Fasching, Joseph Han, Weston Arthur Hermann, Friedrich B. Prinz, Phil Reilly, Jagdeep Singh
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Patent number: 8883266Abstract: A method of fabricating quantum confinements is provided. The method includes depositing, using a deposition apparatus, a material layer on a substrate, where the depositing includes irradiating the layer, before a cycle, during a cycle, and/or after a cycle of the deposition to alter nucleation of quantum confinements in the material layer to control a size and/or a shape of the quantum confinements. The quantum confinements can include quantum wells, nanowires, or quantum dots. The irradiation can be in-situ or ex-situ with respect to the deposition apparatus. The irradiation can include irradiation by photons, electrons, or ions. The deposition is can include atomic layer deposition, chemical vapor deposition, MOCVD, molecular beam epitaxy, evaporation, sputtering, or pulsed-laser deposition.Type: GrantFiled: June 11, 2013Date of Patent: November 11, 2014Assignees: The Board of Trustees of the Leland Stanford Junior University, Honda Patents & Technologies North America, LLCInventors: Timothy P. Holme, Andrei Iancu, Hee Joon Jung, Michael C Langston, Munekazu Motoyama, Friedrich B. Prinz, Takane Usui, Hitoshi Iwadate, Neil Dasgupta, Cheng-Chieh Chao
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Patent number: 8877367Abstract: In an All-Electron Battery (AEB), inclusions embedded in an active region between two electrodes of a capacitor provide enhanced energy storage. Electrons can tunnel to/from and/or between the inclusions, thereby increasing the charge storage density relative to a conventional capacitor. One or more barrier layers is present in an AEB to block DC current flow through the device. The AEB effect can be enhanced by using multi-layer active regions having inclusion layers with the inclusions separated by spacer layers that don't have the inclusions. The use of cylindrical geometry or wrap around electrodes and/or barrier layers in a planar geometry can enhance the basic AEB effect. Other physical effects that can be employed in connection with the AEB effect are excited state energy storage, and formation of a Bose-Einstein condensate (BEC).Type: GrantFiled: December 9, 2010Date of Patent: November 4, 2014Assignee: The Board of Trustees of the Leland Stanford Junior UniversityInventors: Timothy P. Holme, Friedrich B. Prinz, Philip B. Van Stockum
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Publication number: 20140272564Abstract: Provided herein are energy storage device cathodes with high capacity electrochemically active material including compounds that include iron, fluorine, sulfur, and optionally oxygen. Batteries with active materials including a compound of the formula FeFaSbOc exhibit high capacity, high specific energy, high average discharge voltage, and low hysteresis, even when discharged at high rates. Iron, fluorine, and sulfur-containing compounds may be ionically and electronically conductive.Type: ApplicationFiled: March 12, 2014Publication date: September 18, 2014Applicant: QuantumScape CorporationInventors: Timothy P. Holme, Joseph Han, Weston Arthur Hermann, Rainer J. Fasching, Bradley O. Stimson, Cheng Chieh Chao
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Patent number: 8802287Abstract: The present invention provides a solid-state energy storage device having at least one quantum confinement species (QCS), where the QCS can include a quantum dot (QD), quantum well, or nanowire. The invention further includes at least one layer of a dielectric material with at least one QCS incorporated there to, and a first conductive electrode disposed on a top surface of the at least one layer of the dielectric material, and a second conductive electrode is disposed on a bottom surface of the at least one layer of dielectric material, where the first electrode and the second electrode are disposed to transfer a charge to the at least one QCS, where when an electrical circuit is disposed to provide an electric potential across the first electrode and the second electrode, the electric potential discharges the transferred charge from the at least one QCS to the electrical circuit.Type: GrantFiled: January 15, 2010Date of Patent: August 12, 2014Assignee: The Board of Trustees of the Leland Stanford Junior UniversityInventors: Timothy P. Holme, Friedrich B. Prinz
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Publication number: 20140093654Abstract: A method of fabricating quantum confinements is provided. The method includes depositing, using a deposition apparatus, a material layer on a substrate, where the depositing includes irradiating the layer, before a cycle, during a cycle, and/or after a cycle of the deposition to alter nucleation of quantum confinements in the material layer to control a size and/or a shape of the quantum confinements. The quantum confinements can include quantum wells, nanowires, or quantum dots. The irradiation can be in-situ or ex-situ with respect to the deposition apparatus. The irradiation can include irradiation by photons, electrons, or ions. The deposition is can include atomic layer deposition, chemical vapor deposition, MOCVD, molecular beam epitaxy, evaporation, sputtering, or pulsed-laser deposition.Type: ApplicationFiled: June 11, 2013Publication date: April 3, 2014Inventors: Timothy P. Holme, Andrei Iancu, Hee Joon Jung, Michael C. Langston, Munekazu Motoyama, Friedrich B. Prinz, Takane Usui, Hitoshi Iwadate, Neil Dasgupta, Cheng-Chieh Chao
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Patent number: 8551868Abstract: A method of fabricating quantum confinements is provided. The method includes depositing, using a deposition apparatus, a material layer on a substrate, where the depositing includes irradiating the layer, before a cycle, during a cycle, and/or after a cycle of the deposition to alter nucleation of quantum confinements in the material layer to control a size and/or a shape of the quantum confinements. The quantum confinements can include quantum wells, nanowires, or quantum dots. The irradiation can be in-situ or ex-situ with respect to the deposition apparatus. The irradiation can include irradiation by photons, electrons, or ions. The deposition is can include atomic layer deposition, chemical vapor deposition, MOCVD, molecular beam epitaxy, evaporation, sputtering, or pulsed-laser deposition.Type: GrantFiled: March 24, 2011Date of Patent: October 8, 2013Assignees: The Board of Trustees of the Leland Stanford Junior Universit, Honda Patents & Technologies North America, LLCInventors: Timothy P. Holme, Andrei Iancu, Hee Joon Jung, Michael C Langston, Munekazu Motoyama, Friedrich B. Prinz, Takane Usui, Hitoshi Iwadate, Neil Dasgupta, Cheng-Chieh Chao
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Patent number: 8524398Abstract: Improved energy storage is provided by exploiting two physical effects in combination. The first effect can be referred to as the All-Electron Battery (AEB) effect, and relates to the use of inclusions embedded in a dielectric structure between two electrodes of a capacitor. Electrons can tunnel through the dielectric between the electrodes and the inclusions, thereby increasing the charge storage density relative to a conventional capacitor. The second effect can be referred to as an area enhancement effect, and relates to the use of micro-structuring or nano-structuring on one or both of the electrodes to provide an enhanced interface area relative to the electrode geometrical area. Area enhancement is advantageous for reducing the self-discharge rate of the device.Type: GrantFiled: March 29, 2010Date of Patent: September 3, 2013Assignee: The Board of Trustees of the Leland Stanford Junior UniversityInventors: Timothy P. Holme, Friedrich B. Prinz, Takane Usui
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Patent number: 8501367Abstract: Silver-copper-zinc compositions are employed as catalysts, e.g., for fuel cell and/or electrolyzer applications. These compositions have been experimentally tested in solid oxide fuel cell and proton exchange membrane fuel cell configurations. Such catalysts can be effective for both the anode and cathode half-reactions. A preferred composition range is AgxCuyZnz, where 0?x?0.1, 0.2?y?0.5, and 0.5?z?0.8.Type: GrantFiled: April 27, 2010Date of Patent: August 6, 2013Assignee: The Board of Trustees of the Leland Stanford Junior UniversityInventors: Timothy P. Holme, Friedrich B. Prinz
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Patent number: 8499361Abstract: A localized nanostructure growth apparatus that has a partitioned chamber is provided, where a first partition includes a scanning probe microscope (SPM) and a second partition includes an atomic layer deposition (ALD) chamber, where the first partition is hermetically isolated from the second partition, and at least one SPM probe tip of the SPM is disposed proximal to a sample in the ALD chamber. According to the invention, the hermetic isolation between the chambers prevents precursor vapor from damaging critical microscope components and ensuring that contaminants in the ALD chamber can be minimized.Type: GrantFiled: July 13, 2012Date of Patent: July 30, 2013Assignees: The Board of Trustees of the Leland Stanford Junior University, Honda Motor Co., LtdInventors: James F. Mack, Neil Dasgupta, Timothy P. Holme, Friedrich B. Prinz, Andrel Iancu, Wonyoung Lee
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Patent number: 8496999Abstract: Area selective atomic layer deposition is provided by a method including the following steps. First, a substrate is provided. Second, a tip of a scanning probe microscope (SPM) is disposed in proximity to the surface of the substrate. An electrical potential is then established between the tip and the surface that cause one or more localized electrical effects in proximity to the tip. Deposition reactants for atomic layer deposition (ALD) are provided, and deposition occurs in a pattern defined by the localized electrical effects because of locally enhanced ALD reaction rates.Type: GrantFiled: March 24, 2009Date of Patent: July 30, 2013Assignees: The Board of Trustees of the Leland Stanford Junior University, Honda Motor Co., LtdInventors: Neil Dasgupta, Friedrich B. Prinz, Timothy P. Holme, Stephen Walch, Wonyoung Lee, James F. Mack
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Patent number: 8395042Abstract: Efficient photovoltaic devices with quantum dots are provided. Quantum dots have numerous desirable properties that can be used in solar cells, including an easily selected bandgap and Fermi level. In particular, the size and composition of a quantum dot can determine its bandgap and Fermi level. By precise deposition of quantum dots in the active layer of a solar cell, bandgap gradients can be present for efficient sunlight absorption, exciton dissociation, and charge transport. Mismatching Fermi levels are also present between adjacent quantum dots, allowing for built-in electric fields to form and aid in charge transport and the prevention of exciton recombination.Type: GrantFiled: March 24, 2009Date of Patent: March 12, 2013Assignees: The Board of Trustees of the Leland Stanford Junior University, Honda Motor Co., LtdInventors: Neil Dasgupta, Friedrich B. Prinz, Timothy P. Holme, James F Mack
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Publication number: 20120313589Abstract: High density energy storage in semiconductor devices is provided. There are two main aspects of the present approach. The first aspect is to provide high density energy storage in semiconductor devices based on formation of a plasma in the semiconductor. The second aspect is to provide high density energy storage based on charge separation in a p-n junction.Type: ApplicationFiled: July 13, 2011Publication date: December 13, 2012Inventors: Timothy P. Holme, Friedrich B. Prinz, Andrei Iancu