Abstract: A localized nanostructure growth apparatus that has a partitioned chamber is provided, where a first partition includes a scanning probe microscope (SPM) and a second partition includes an atomic layer deposition (ALD) chamber, where the first partition is hermetically isolated from the second partition, and at least one SPM probe tip of the SPM is disposed proximal to a sample in the ALD chamber. According to the invention, the hermetic isolation between the chambers prevents precursor vapor from damaging critical microscope components and ensuring that contaminants in the ALD chamber can be minimized.

Abstract: A localized nanostructure growth apparatus that has a partitioned chamber is provided, where a first partition includes a scanning probe microscope (SPM) and a second partition includes an atomic layer deposition (ALD) chamber, where the first partition is hermetically isolated from the second partition, and at least one SPM probe tip of the SPM is disposed proximal to a sample in the ALD chamber. According to the invention, the hermetic isolation between the chambers prevents precursor vapor from damaging critical microscope components and ensuring that contaminants in the ALD chamber can be minimized.

Abstract: One or more quantum dots are used to control current flow in a transistor. Instead of being disposed in a channel between source and drain, the quantum dot (or dots) are vertically separated from the source and drain by an insulating layer. Current can tunnel between the source/drain electrodes and the quantum dot (or dots) by tunneling through the insulating layer. Quantum dot energy levels can be controlled with one or more gate electrodes capacitively coupled to some or all of the quantum dot(s). Current can flow between source and drain if a quantum dot energy level is aligned with the energy of incident tunneling electrons. Current flow between source and drain is inhibited if no quantum dot energy level is aligned with the energy of incident tunneling electrons. Here energy level alignment is understood to have a margin of about the thermal energy (e.g., 26 meV at room temperature).

Abstract: The present invention provides a method of providing a desired catalyst electron energy level. The method includes providing a donor material quantum confinement structure (QCS) having a first Fermi level, and providing an acceptor QCS material having a second Fermi level, where the first Fermi level is higher than the second Fermi level. According to the method the acceptor is disposed proximal to the donor to alter an electronic structure of the donor and the acceptor materials to provide the desired catalyst electron energy level.

Abstract: In an All-Electron Battery (AEB), inclusions embedded in an active region between two electrodes of a capacitor provide enhanced energy storage. Electrons can tunnel to/from and/or between the inclusions, thereby increasing the charge storage density relative to a conventional capacitor. One or more barrier layers is present in an AEB to block DC current flow through the device. The AEB effect can be enhanced by using multi-layer active regions having inclusion layers with the inclusions separated by spacer layers that don't have the inclusions. The use of cylindrical geometry or wrap around electrodes and/or barrier layers in a planar geometry can enhance the basic AEB effect. Other physical effects that can be employed in connection with the AEB effect are excited state energy storage, and formation of a Bose-Einstein condensate (BEC).

Abstract: A method of precursor selection for thin film deposition is provided, that includes a group of precursors, using a rule-set for selecting one or more candidate precursors for thermal stability, high growth rate, and low contamination. Candidate geometries and constituent geometries are simulated and optimized, and bond strengths of the candidates and constituents are determined. The rule-set is based on bond strength that compares molecule and constituent energies between a set of bond strengths within a candidate ligand or between a metal atom and one ligand. The rule-set requires metal atom-ligand bonds are between 0.2 and 3 eV, metal atom-ligand bond strengths are less than metal atom-ligand bond strengths of other candidates. The metal atom-ligand bond strength is >T?S, where T is a reaction temperature and ?S is the reaction entropy change and the bond within a ligand, where (ligand bond)>(metal atom and ligand bond).

Abstract: A method of fabricating quantum confinements is provided. The method includes depositing, using a deposition apparatus, a material layer on a substrate, where the depositing includes irradiating the layer, before a cycle, during a cycle, and/or after a cycle of the deposition to alter nucleation of quantum confinements in the material layer to control a size and/or a shape of the quantum confinements. The quantum confinements can include quantum wells, nanowires, or quantum dots. The irradiation can be in-situ or ex-situ with respect to the deposition apparatus. The irradiation can include irradiation by photons, electrons, or ions. The deposition is can include atomic layer deposition, chemical vapor deposition, MOCVD, molecular beam epitaxy, evaporation, sputtering, or pulsed-laser deposition.

Abstract: Silver-copper-zinc compositions are employed as catalysts, e.g., for fuel cell and/or electrolyzer applications. These compositions have been experimentally tested in solid oxide fuel cell and proton exchange membrane fuel cell configurations. Such catalysts can be effective for both the anode and cathode half-reactions. A preferred composition range is AgxCuyZnz, where 0?x?0.1, 0.2?y?0.5, and 0.5?z?0.8.

Abstract: Improved energy storage is provided by exploiting two physical effects in combination. The first effect can be referred to as the All-Electron Battery (AEB) effect, and relates to the use of inclusions embedded in a dielectric structure between two electrodes of a capacitor. Electrons can tunnel through the dielectric between the electrodes and the inclusions, thereby increasing the charge storage density relative to a conventional capacitor. The second effect can be referred to as an area enhancement effect, and relates to the use of micro-structuring or nano-structuring on one or both of the electrodes to provide an enhanced interface area relative to the electrode geometrical area. Area enhancement is advantageous for reducing the self-discharge rate of the device.

Abstract: The current invention provides a method of fabricating quantum confinement (QC) in a solar cell that includes using atomic layer deposition (ALD) for providing at least one QC structure embedded into an intrinsic region of a p-i-n diode in the solar cell, where optical and electrical properties of the confinement structure are adjusted according to at least one dimension of the confinement structure. The QC structures can include quantum wells, quantum wires, quantum tubes, and quantum dots.

Abstract: A method of depositing oxide materials on a substrate is provided. A deposition chamber holds the substrate, where the substrate is at a specified temperature, and the chamber has a chamber pressure and wall temperature. A precursor molecule containing a cation material atom is provided to the chamber, where the precursor has a line temperature and a source temperature. An oxidant is provided to the chamber, where the oxidant has a source flow rate. Water is provided to the chamber, where the water has a source temperature. By alternating precursor pulses, the water and the oxidant are integrated with purges of the chamber to provide low contamination levels and high growth rates of oxide material on the substrate, where the pulses and the purge have durations and flow rates. A repeatable growth cycle includes pulsing the precursor, purging the chamber, pulsing the water, pulsing the oxidant, and purging the chamber.

Abstract: The present invention provides a method of providing a desired catalyst electron energy level. The method includes providing a donor material quantum confinement structure (QCS) having a first Fermi level, and providing an acceptor QCS material having a second Fermi level, where the first Fermi level is higher than the second Fermi level. According to the method the acceptor is disposed proximal to the donor to alter an electronic structure of the donor and the acceptor materials to provide the desired catalyst electron energy level.

Abstract: One or more quantum dots are used to control current flow in a transistor. Instead of being disposed in a channel between source and drain, the quantum dot (or dots) are vertically separated from the source and drain by an insulating layer. Current can tunnel between the source/drain electrodes and the quantum dot (or dots) by tunneling through the insulating layer. Quantum dot energy levels can be controlled with one or more gate electrodes capacitively coupled to some or all of the quantum dot(s). Current can flow between source and drain if a quantum dot energy level is aligned with the energy of incident tunneling electrons. Current flow between source and drain is inhibited if no quantum dot energy level is aligned with the energy of incident tunneling electrons. Here energy level alignment is understood to have a margin of about the thermal energy (e.g., 26 meV at room temperature).

Abstract: The present invention provides a solid-state energy storage device having at least one quantum confinement species (QCS), where the QCS can include a quantum dot (QD), quantum well, or nanowire. The invention further includes at least one layer of a dielectric material with at least one QCS incorporated there to, and a first conductive electrode disposed on a top surface of the at least one layer of the dielectric material, and a second conductive electrode is disposed on a bottom surface of the at least one layer of dielectric material, where the first electrode and the second electrode are disposed to transfer a charge to the at least one QCS, where when an electrical circuit is disposed to provide an electric potential across the first electrode and the second electrode, the electric potential discharges the transferred charge from the at least one QCS to the electrical circuit.

Abstract: Lateral nano-scale pattern control for atomic layer deposition can be provided by using a scanning tunneling microscope (SPM) tip to locally influence chemical reaction rates. An electric field and/or charge transfer can significantly reduce the potential energy barrier that affects reaction kinetics, and thereby significantly enhance reaction rates. By operating the ALD growth system in a regime where reaction rates without an electric field and/or charge transfer are negligible, deposition can be precisely controlled to occur only at locations defined by the SPM tip. Alternatively, the SPM tip can be used to locally inhibit ALD growth.

Abstract: Efficient photovoltaic devices with quantum dots are provided. Quantum dots have numerous desirable properties that can be used in solar cells, including an easily selected bandgap and Fermi level. In particular, the size and composition of a quantum dot can determine its bandgap and Fermi level. By precise deposition of quantum dots in the active layer of a solar cell, bandgap gradients can be present for efficient sunlight absorption, exciton dissociation, and charge transport. Mismatching Fermi levels are also present between adjacent quantum dots, allowing for built-in electric fields to form and aid in charge transport and the prevention of exciton recombination.

Abstract: A localized nanostructure growth apparatus that has a partitioned chamber is provided, where a first partition includes a scanning probe microscope (SPM) and a second partition includes an atomic layer deposition (ALD) chamber, where the first partition is hermetically isolated from the second partition, and at least one SPM probe tip of the SPM is disposed proximal to a sample in the ALD chamber. According to the invention, the hermetic isolation between the chambers prevents precursor vapor from damaging critical microscope components and ensuring that contaminants in the ALD chamber can be minimized.

Abstract: A solid oxide fuel cell (SOFC) with reduced electrical resistance and greater vacancy density control is provided. The SOFC includes an interfacial layer deposited, preferably by atomic layer deposition (ALD), between an electrode layer and an electrolyte layer. The interfacial layer includes an ion-conductive material. By use of ALD, the interfacial layer can have a very small thickness and can include layered structures of alternating materials. The interfacial layer can also include doping gradient structures of doped ion-conductive materials. Ultra-thin film platinum layers for high current density and cermet layers at the electrode/electrolyte interface are also provided.

Abstract: A method of depositing oxide materials on a substrate is provided. A deposition chamber holds the substrate, where the substrate is at a specified temperature, and the chamber has a chamber pressure and wall temperature. A precursor molecule containing a cation material atom is provided to the chamber, where the precursor has a line temperature and a source temperature. An oxidant is provided to the chamber, where the oxidant has a source flow rate. Water is provided to the chamber, where the water has a source temperature. By alternating precursor pulses, the water and the oxidant are integrated with purges of the chamber to provide low contamination levels and high growth rates of oxide material on the substrate, where the pulses and the purge have durations and flow rates. A repeatable growth cycle includes pulsing the precursor, purging the chamber, pulsing the water, pulsing the oxidant, and purging the chamber.

Abstract: A method of precursor selection for thin film deposition is provided, that includes a group of precursors, using a rule-set for selecting one or more candidate precursors for thermal stability, high growth rate, and low contamination. Candidate geometries and constituent geometries are simulated and optimized, and bond strengths of the candidates and constituents are determined. The rule-set is based on bond strength that compares molecule and constituent energies between a set of bond strengths within a candidate ligand or between a metal atom and one ligand. The rule-set requires metal atom-ligand bonds are between 0.2 and 3 eV, metal atom-ligand bond strengths are less than metal atom-ligand bond strengths of other candidates. The metal atom-ligand bond strength is >T?S, where T is a reaction temperature and ?S is the reaction entropy change and the bond within a ligand, where (ligand bond)>(metal atom and ligand bond).