Patents by Inventor Tina LI

Tina LI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • TUNGSTEN CHEMICAL-MECHANICAL POLISHING COMPOSITION
    Publication number: 20150376462
    Abstract: A chemical-mechanical polishing composition includes colloidal silica abrasive particles having a chemical compound incorporated therein. The chemical compound may include a nitrogen-containing compound such as an aminosilane or a phosphorus-containing compound. Methods for employing such compositions include applying the composition to a semiconductor substrate to remove at least a portion of a layer.
    Type: Application
    Filed: June 25, 2015
    Publication date: December 31, 2015
    Inventors: Lin Fu, Steven Grumbine, Jeffrey Dysard, Tina Li
  • CMP compositions selective for oxide over polysilicon and nitride with high removal rate and low defectivity
    Patent number: 9165489
    Abstract: The invention provides a chemical-mechanical polishing composition containing a ceria abrasive and a polymer of formula I: wherein X1 and X2, Y1 and Y2, Z1 and Z2, R1, R2, R3, and R4, and m are as defined herein, and water, wherein the polishing composition has a pH of about 1 to about 4.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.
    Type: Grant
    Filed: May 29, 2014
    Date of Patent: October 20, 2015
    Assignee: Cabot Microelectronics Corporation
    Inventors: Tina Li, Kevin Dockery, Renhe Jia, Jeffrey Dysard
  • CMP COMPOSITIONS SELECTIVE FOR OXIDE OVER POLYSILICON AND NITRIDE WITH HIGH REMOVAL RATE AND LOW DEFECTIVITY
    Publication number: 20140349483
    Abstract: The invention provides a chemical-mechanical polishing composition containing a ceria abrasive and a polymer of formula I: wherein X1 and X2, Y1 and Y2, Z1 and Z2, R1, R2, R3, and R4, and m are as defined herein, and water, wherein the polishing composition has a pH of about 1 to about 4.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.
    Type: Application
    Filed: May 29, 2014
    Publication date: November 27, 2014
    Inventors: Tina LI, Kevin Dockery, Renhe Jia, Jeffrey Dysard