Patents by Inventor Ting AN

Ting AN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11996400
    Abstract: A manufacturing method of a package-on-package structure includes at least the following steps. Top packages are mounted on a top side of a reconstructed wafer over a flexible tape, where conductive bumps at a bottom side of the reconstructed wafer is attached to the flexible tape, and during the mounting, a shape geometry of the respective conductive bump changes and at least a lower portion of the respective conductive bump is embraced by the flexible tape. The flexible tape is released from the conductive bumps after the mounting.
    Type: Grant
    Filed: April 27, 2022
    Date of Patent: May 28, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hsuan-Ting Kuo, Ching-Hua Hsieh, Cheng-Ting Chen, Hsiu-Jen Lin, Hao-Jan Pei, Yu-Peng Tsai, Chia-Lun Chang, Chih-Chiang Tsao, Philip Yu-Shuan Chung
  • Patent number: 11995390
    Abstract: A circuit includes a first transistor, a second type-one transistor, a first type-two transistor, a third type-one transistor, a fourth type-one transistor, and a fifth type-one transistor. The first type-one transistor has a gate configured to have a first supply voltage of a first power supply. The first type-two transistor has a gate configured to have a second supply voltage of the first power supply. The third type-one transistor has a first active-region conductively connected with an active-region of the first type-one transistor. Third type-one transistor has a second active-region and a gate conductively connected to each other. The fifth type-one transistor has a first active-region conductively connected with the gate of the third type-one transistor and has a second active-region configured to have a first supply voltage of a second power supply. The fifth type-one transistor is configured to be at a conducting state.
    Type: Grant
    Filed: December 9, 2022
    Date of Patent: May 28, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chi-Yu Lu, Ting-Wei Chiang, Hui-Zhong Zhuang, Jerry Chang Jui Kao, Pin-Dai Sue, Jiun-Jia Huang, Yu-Ti Su, Wei-Hsiang Ma
  • Patent number: 11996403
    Abstract: Embodiments disclosed herein include semiconductor devices and methods of forming such devices. In an embodiment, a semiconductor device comprises a semiconductor substrate and a source. The source has a first conductivity type and a first insulator separates the source from the semiconductor substrate. The semiconductor device further comprises a drain. The drain has a second conductivity type that is opposite from the first conductivity type, and a second insulator separates the drain from the semiconductor substrate. In an embodiment, the semiconductor further comprises a semiconductor body between the source and the drain, where the semiconductor body is spaced away from the semiconductor substrate.
    Type: Grant
    Filed: December 13, 2019
    Date of Patent: May 28, 2024
    Assignee: Intel Corporation
    Inventors: Nidhi Nidhi, Rahul Ramaswamy, Walid M. Hafez, Hsu-Yu Chang, Ting Chang, Babak Fallahazad, Tanuj Trivedi, Jeong Dong Kim, Ayan Kar, Benjamin Orr
  • Patent number: 11997327
    Abstract: A system for playing specific streaming selected from combined streamings and a method thereof are disclosed. In the system, an array server combines video streamings outputted from signal sources, to form a multi-source streaming including all video streamings, and transmits the combined multi-source streaming to a streaming server, the streaming server provides the multi-source streaming to a client end, the client end obtains the video streaming to be played from the received multi-source streaming. Therefore, a user can immediately switch the video streamings with different view angles while watching live broadcast, so as to achieve the technical effect of reducing the streaming load of the server during live broadcast.
    Type: Grant
    Filed: December 29, 2021
    Date of Patent: May 28, 2024
    Assignee: Light Matrix Inc.
    Inventor: Wei-Ting Chen
  • Patent number: 11992010
    Abstract: The present disclosure provides the use of 4-(Phenylethynyl) benzoic acid in preparing a plant growth regulator. 4-(Phenylethynyl) benzoic acid has a formula as C15H10O2, a molecular weight of 222.2390. The optimum concentration of 4-(Phenylethynyl) benzoic acid in the plant growth regulator is in a range of 10 ?M to 200 ?M. The plant growth regulator further contains a pesticidally acceptable carrier. The present disclosure further provides the use of 4-(Phenylethynyl) benzoic acid in regulating plant growth. In the use of 4-(Phenylethynyl) benzoic acid in preparing a plant growth regulator of the present disclosure, 4-(Phenylethynyl) benzoic acid has the ABA-like effects, and is more stable, easily available, cheaper, and environmentally friendly. Therefore, the present disclosure is suitable for large-scale popularization.
    Type: Grant
    Filed: September 23, 2022
    Date of Patent: May 28, 2024
    Assignee: China Jiliang University
    Inventors: Pei Xu, Pingping Fang, Xiaofang Li, Zhuoyi Wang, Ting Sun, Xinyang Wu, Peipei Zhang
  • Patent number: 11996630
    Abstract: An antenna structure includes a ground element, a first radiation element, a second radiation element, a third radiation element, and a nonconductive support element. The first radiation element is coupled to a first grounding point on the ground element. The second radiation element has a feeding point. The second radiation element is adjacent to the first radiation element. The third radiation element is coupled to a second grounding point on the ground element. The third radiation element is adjacent to the second radiation element. The first radiation element, the second radiation element, and the third radiation element are disposed on the nonconductive support element. The second radiation element is at least partially surrounded by the first radiation element. The third radiation element is at least partially surrounded by the second radiation element.
    Type: Grant
    Filed: September 2, 2022
    Date of Patent: May 28, 2024
    Assignee: QUANTA COMPUTER INC.
    Inventors: Yu-Chen Zhao, Chung-Ting Hung, Chin-Lung Tsai, Ying-Cong Deng, Kuan-Hsien Lee, Yi-Chih Lo, Kai-Hsiang Chang, Chun-I Cheng, Yan-Cheng Huang
  • Patent number: 11994011
    Abstract: The present invention discloses a permanent packer and an extended gas lift method using the permanent packer, the method comprising: S1. imbedding the extended gas lift embedded pipe when setting the permanent packer, wherein the extended gas lift embedded pipe has an upper end being closed and a lower end being open, is provided therein with a one-way valve through which the fluid can pass from top to bottom; S2. lowering a breaking device from the production casing when in the extended gas lift, to break the upper end of the extended gas lift embedded pipe such that the upper and lower ends of the extended gas lift embedded pipe are communicated; and S3. injecting gas into the production casing, lifting the accumulated liquid in the bottom hole to the ground surface, to complete the extended gas lift.
    Type: Grant
    Filed: September 16, 2020
    Date of Patent: May 28, 2024
    Assignees: PetroChina Company Limited, Sichuan Shengnuo Oil. and Gas Engineering Technology Service Co. Ltd
    Inventors: Weilin Wang, Huiyun Ma, Changqing Ye, Hao Tan, Hanbing Tang, Daogang Cai, Xueqiang Wang, Yukui Hong, Fengjing Sun, Wei Zhou, Ting Zhang, Zonghao Dong, Yan Huang, Yun Miao
  • Patent number: 11996633
    Abstract: A wearable device includes a ground element, a first radiation element, a second radiation element, a third radiation element, a fourth radiation element, and a fifth radiation element. The first radiation element has a feeding point, and is coupled to a first grounding point on the ground element. A slot region is surrounded by the first radiation element and the ground element. The second radiation element is coupled to a second grounding point on the ground element. The third radiation element is coupled to the second grounding point. The third radiation element and the second radiation element substantially extend in opposite directions. The fourth radiation element and the fifth radiation element are disposed inside the slot region. An antenna structure is formed by the first radiation element, the second radiation element, the third radiation element, the fourth radiation element, and the fifth radiation element.
    Type: Grant
    Filed: September 6, 2022
    Date of Patent: May 28, 2024
    Assignee: QUANTA COMPUTER INC.
    Inventors: Chun-I Cheng, Chung-Ting Hung, Chin-Lung Tsai, Kuan-Hsien Lee, Yu-Chen Zhao, Kai-Hsiang Chang
  • Patent number: 11992290
    Abstract: A method of controlling an intraoral scanner includes upon completion of lighting a first projection device, triggering a second projection device to initiate lighting, upon initiation of lighting the first projection device, transmitting a first camera trigger signal, a first delay circuit delaying the first camera trigger signal until completion of lighting the second projection device, and upon receiving the first camera trigger signal, a first camera and a second camera starting exposing images.
    Type: Grant
    Filed: August 4, 2020
    Date of Patent: May 28, 2024
    Assignee: Qisda Corporation
    Inventors: Yuan-Yu Hsiao, Ching-Ting Liu
  • Patent number: 11994065
    Abstract: An air supply device, a gas turbine system and a using method thereof are disclosed. In the air supply device, an air intake compartment includes a connection end; a combustion air intake filter is located in the air intake compartment and connected with the combustion air intake filter; a combustion air intake interface is located on a tail plate and is connected with the combustion air silencer; and a sound insulation turnover mechanism includes a sound insulation flap and a turnover mechanism, the air intake compartment includes a first bottom plate and the tail plate that is located at the connection end, the sound insulation flap is located at the connection end, and the turnover mechanism is connected with the sound insulation flap, and is configured to drive the sound insulation flap to rotate relative to the tail plate.
    Type: Grant
    Filed: March 4, 2022
    Date of Patent: May 28, 2024
    Assignee: Yantai Jereh Petroleum Equipment & Technologies Co., Ltd.
    Inventors: Ning Feng, Tao Kou, Ting Zhang, Yichao Mou, Libin Zhou, Xin Li, Xu Liu, Lili Wang, Jianglei Zou, Qiong Wu, Wanchun Zha, Cong Zhang
  • Patent number: 11992322
    Abstract: A heart rhythm detection method and system by using radar sensor is capable of collecting an original signal using a radar sensor toward at least one subject, and converting the original signal to a two dimensional image information (i.e., spectrogram) using the concept of image vision. Then, the neural network automatically learns which heartbeat frequency should be focused on and which heartbeat frequency should be filtered out in the two dimensional image information through deep learning, so that the heartbeat frequencies can be extracted effectively.
    Type: Grant
    Filed: March 30, 2021
    Date of Patent: May 28, 2024
    Assignee: IONETWORKS INC.
    Inventors: Jing-Ming Guo, Ting Lin, Chia-Fen Chang, Jeffry Susanto, Yi-Hsiang Lin, Po-Cheng Huang, Yu-Wen Wei
  • Patent number: 11996412
    Abstract: In an embodiment, a method includes forming a plurality of fins adjacent to a substrate, the plurality of fins comprising a first fin, a second fin, and a third fin; forming a first insulation material adjacent to the plurality of fins; reducing a thickness of the first insulation material; after reducing the thickness of the first insulation material, forming a second insulation material adjacent to the first insulation material and the plurality of fins; and recessing the first insulation material and the second insulation material to form a first shallow trench isolation (STI) region.
    Type: Grant
    Filed: August 9, 2022
    Date of Patent: May 28, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Szu-Ying Chen, Sen-Hong Syue, Li-Ting Wang, Huicheng Chang, Yee-Chia Yeo
  • Patent number: 11993542
    Abstract: Disclosed are a multifunctional cement hydration heat control material and a manufacturing method therefor. The cement hydration heat control material in is a comb polymer having three side chain structures, the three side chain structures are respectively a carboxyl group, a sugar alcohol group, and a polyether structure, and the main chain of the polymer is a carbon chain structure formed by free-radical polymerization of a double bond in a double bond compound monomer. The multifunctional cement hydration heat control material can achieve integration of cement hydration heat control performance, water reduction performance, and shrinkage reduction performance in a same molecule, can achieve control focusing on a performance by means of structural adjustment, does not need multi-component compounding during use, and is more convenient. The control material is non-toxic and water-soluble, can be made to have an appropriate concentration, and is convenient to use.
    Type: Grant
    Filed: November 14, 2019
    Date of Patent: May 28, 2024
    Assignees: SOBUTE NEW MATERIALS CO., LTD., BOTE NEW MATERIALS TAIZHOU CO., LTD., ZHENJIANG SOBUTE NEW MATERIAL CO., LTD.
    Inventors: Jiaping Liu, Rui Wang, Qian Tian, Wenbin Wang, Lei Li, Yujiang Wang, Hua Li, Ting Yao, Yang Chu
  • Patent number: 11996371
    Abstract: Embodiments include packages and methods for forming packages which include interposers having a substrate made of a dielectric material. The interposers may also include a redistribution structure over the substrate which includes metallization patterns which are stitched together in a patterning process which includes multiple lateral overlapping patterning exposures.
    Type: Grant
    Filed: June 4, 2021
    Date of Patent: May 28, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shang-Yun Hou, Weiming Chris Chen, Kuo-Chiang Ting, Hsien-Pin Hu, Wen-Chih Chiou, Chen-Hua Yu
  • Patent number: 11996467
    Abstract: A semiconductor device includes first and second semiconductor fins extending from a substrate and a source/drain region epitaxially grown in recesses of the first and second semiconductor fins. A top surface of the source/drain region is higher than a surface level with top surfaces of the first and second semiconductor fins. The source/drain region includes a plurality of buffer layers. Respective layers of the plurality of buffer layers are embedded between respective layers of the source/drain region.
    Type: Grant
    Filed: May 15, 2023
    Date of Patent: May 28, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Tzu-Hsiang Hsu, Ting-Yeh Chen, Wei-Yang Lee, Feng-Cheng Yang, Yen-Ming Chen
  • Patent number: 11993689
    Abstract: The present invention relates to a foamable composition used to prepare foamed thermoplastic polyurethane and a microwave molded body thereof. The foamable composition includes unfoamed thermoplastic polyurethane particles, a thickener or a bridging agent, and a foaming agent, wherein the unfoamed thermoplastic polyurethane particles have a viscosity of 1,000 poise to 9,000 poise measured at 170° C. according to JISK 7311 test method.
    Type: Grant
    Filed: June 13, 2018
    Date of Patent: May 28, 2024
    Assignee: SUNKO INK CO., LTD.
    Inventors: Ting-Kai Huang, Yi-Jung Huang, Hsin-Hung Lin, Hong-Yi Lin, Ya-Chi Wang
  • Patent number: 11996451
    Abstract: Techniques in accordance with embodiments described herein are directed to semiconductor devices including a layer of aluminum nitride AlN or aluminum gallium nitride AlGaN as a ferroelectric layer and a method of making a thin film of AlN/AlGaN that possesses ferroelectric properties. In a ferroelectric transistor, a thin film of AlN/AlGaN that exhibits ferroelectric properties is formed between a gate electrode and a second semiconductor layer, e.g., of GaN.
    Type: Grant
    Filed: August 10, 2022
    Date of Patent: May 28, 2024
    Assignees: Taiwan Semiconductor Manufacturing Co., Ltd., National Taiwan University
    Inventors: Miin-Jang Chen, Tzong-Lin Jay Shieh, Bo-Ting Lin
  • Patent number: 11993782
    Abstract: Provided is a lentivirus packaging system, which comprises: a transfer plasmid comprising a nucleotide sequence of TAR-reserved-chimeric 5? long terminal repeat (LTR); at least one packaging plasmid comprising a nucleotide sequence encoding TAR RNA binding protein, a nucleotide sequence of rev gene, a nucleotide sequence of gag gene, and a nucleotide sequence of pol gene; and an envelope plasmid. Due to the expression of gene of TAR RNA binding protein by the packaging plasmids, the produced lentivirus has higher virus titer and can improve the transduction rate and the gene delivery efficiency during cell transduction. The present invention further provides a method of improving lentivirus production in a host cell, which comprises using the lentivirus packaging system to transfect the host cell. The present invention further provides a cell transduced by the lentivirus and a method of using the cell for treating cancer.
    Type: Grant
    Filed: July 16, 2021
    Date of Patent: May 28, 2024
    Assignee: PELL BIO-MED TECHNOLOGY CO., LTD.
    Inventors: Wei-Chi Lin, Ssu-Yu Chou, Yao-Cheng Yang, Chien-Ting Lin, Chen-Lung Lin
  • Patent number: 11994558
    Abstract: An electronic system test method, comprising: (a) inputting a victim test pattern to a victim signal path of a target electronic system and simultaneously inputting at least one aggressor test pattern to at least one aggressor signal path of the target electronic system, according to a major set of test patterns comprising a plurality of minor set of test patterns; (b) acquiring a output response corresponding to the step (a); and (c) after changing the victim test pattern or the aggressor test pattern, and after repeating the step (a) and the step (b) until all of the major test patterns set are used thereby acquiring a plurality of the output responses, determining a combination level according to the output responses. The victim test pattern is an X bit pattern and the aggressor test pattern is a Y bit pattern, X and Y are positive integers larger than or equal to 3.
    Type: Grant
    Filed: November 1, 2022
    Date of Patent: May 28, 2024
    Assignee: Realtek Semiconductor Corp.
    Inventors: Han-Yun Tsai, Shih-Hung Wang, Ting-Ying Wu
  • Patent number: D1028680
    Type: Grant
    Filed: January 15, 2024
    Date of Patent: May 28, 2024
    Assignee: SICHUAN LINNAER TRADING CO., LTD.
    Inventor: Ting Huang