Abstract: An interconnect structure includes a first and second insulating layer, a first and second conductive line, and a first, second, and third conductive via. The second insulating layer is disposed on the first insulating layer. The first conductive line including a first and second portion, and the first, second, and the third conductive vias are embedded in the first insulating layer. The second conductive line including a third portion and fourth portion is embedded in the second insulating layer. The first conductive via connects the first and third portions. The second conductive via connects the second and third portions. The third conductive via connects the second and fourth portions. A first cross-sectional area surrounded by the first, second, third portions, the first, second conductive vias is substantially equal to a second cross-sectional area surrounded by the second, third, fourth portions, the second, third conductive vias.

Abstract: The present disclosure relates to an electronic device and a method of manufacturing a filtering component of the electronic device. The electronic device includes a semiconductor component, an insulating layer, at least one contact plug, and a filtering component. The insulating layer is disposed on the semiconductor component. The contact plug penetrates through the insulating layer. The filtering component is disposed on the insulating layer and the contact plug. The filtering component includes a bottom electrode, an isolation layer, a top electrode, and a dielectric layer. The bottom electrode is divided into a first segment connected to the contact plug and a second segment separated from the first segment. The isolation layer is disposed on the bottom electrode, the top electrode is disposed in the isolation layer, and the dielectric layer is disposed between the bottom electrode and the top electrode.

Abstract: The present disclosure provides a through silicon via structure and a method for manufacturing the same. The through silicon via structure includes a semiconductor substrate, a shaping film, a conductive line, a barrier layer, and an insulating layer. The shaping film is disposed over a back surface of the semiconductor substrate, and is configured to maintain a planar formation of the semiconductor substrate. The conductive line is disposed through the shaping film and in the semiconductor substrate. The barrier layer surrounds the conductive line, and the insulating layer surrounds the barrier layer.

Abstract: The present disclosure relates to an electronic device and a method of manufacturing a filtering component of the electronic device. The electronic device includes a semiconductor component, an insulating layer, at least one contact plug, and a filtering component. The insulating layer is disposed on the semiconductor component. The contact plug penetrates through the insulating layer. The filtering component is disposed on the insulating layer and the contact plug. The filtering component includes a bottom electrode, an isolation layer, a top electrode, and a dielectric layer. The bottom electrode is divided into a first segment connected to the contact plug and a second segment separated from the first segment. The isolation layer is disposed on the bottom electrode, the top electrode is disposed in the isolation layer, and the dielectric layer is disposed between the bottom electrode and the top electrode.

Abstract: The present disclosure provides a through silicon via structure and a method for manufacturing the same. The through silicon via structure includes a semiconductor substrate, a shaping film, a conductive line, a barrier layer, and an insulating layer. The shaping film is disposed over a back surface of the semiconductor substrate, and is configured to maintain a planar formation of the semiconductor substrate. The conductive line is disposed through the shaping film and in the semiconductor substrate. The barrier layer surrounds the conductive line, and the insulating layer surrounds the barrier layer.

Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes a semiconductor substrate, an active device, and a TSV structure. The semiconductor substrate has a first surface and a second surface opposite to the first surface. The active device is disposed in the semiconductor substrate at the first surface. The TSV structure extends through the semiconductor substrate from the first surface to the second surface. In some embodiments, the TSV structure includes a first portion and a second portion coupled to the first portion. The first portion of the TSV structure has a first width, the second portion of the TSV structure has a second width, and the second width of the second portion is greater than the first width of the first portion.

Abstract: The present disclosure provides a semiconductor device and a method for preparing the same. The semiconductor device includes at least one chip and a seal ring. The chip is surrounded by the seal ring. The seal ring includes at least one first section and at least one second section. The first section includes an undulating structure.