Abstract: A multi-chamber semiconductor manufacturing system is provided, including: a base, a plurality of processing units and a transfer unit. The base includes a main body and a plurality of supporting frames protrudingly disposed on a mounting surface of the main body. The plurality of processing units are connected to the plurality of supporting frames. The transfer unit is connected to the plurality of supporting frames and located between the plurality of processing units. The transfer unit is configured to transfer a substrate between the plurality of processing units. An aspect ratio value of the base is between 1 and 3.

Abstract: A box folding machine includes a base driving member, a pair of positioning units, and a base frame unit that has two opposite end portions. The base driving member is operable to drive the base frame unit to move between a first position, in which the end portions of the base frame unit are substantially arranged along a first direction, and a second position, in which the end portions of the base frame unit are substantially arranged along a second direction. Each of the positioning units includes a positioning seat. When the base frame unit is in the first position, the positioning seats of the positioning units are proximate to each other in the second direction and are misaligned from each other. When the base frame unit is in the second position, the positioning seats are distal from each other in the second direction.

Abstract: A construction laser level including a housing, a laser mount disposed in the housing and at least one laser generator on the laser mount. A fan disposed in the housing and configured to circulate air to improve heat distribution and dissipation.

Abstract: A semiconductor structure includes a semiconductor fin protruding from a substrate and oriented lengthwise along a first direction, a dielectric fin disposed over the substrate and oriented lengthwise along a second direction perpendicular to the first direction, where the dielectric fin defines a sidewall of the semiconductor fin along the second direction and where the dielectric fin includes a first dielectric layer disposed over a second dielectric layer that differs from the first dielectric layer in composition, and a metal gate stack disposed over the semiconductor fin and oriented lengthwise along the second direction.

Abstract: A tripod-head structure includes a first clamping plate, a second clamping plate, a rotating base, a tightening element, and an adjustment component. The first clamping plate includes a first arc-shaped groove, and the second clamping plate includes a second arc-shaped groove. A portion of a slide rail of the rotating base is placed between the first arc-shaped groove and the second arc-shaped groove. The tightening element passes through the first clamping plate and the second clamping plate. The adjustment component is connected to the tightening element and switchable between an unlocked position and a locked position. In the unlocked position, the slide rail is slidable to adjust an angle of the rotating base. In the locked position, the tightening element presses the first clamping plate and the second clamping plate to tightly secure the slide rail for rapid adjustment of the angle of the rotating base.

Abstract: A semiconductor device includes a plurality of first nanosheets of a first conductive type, a plurality of second nanosheets of a second conductive type and a gate structure. The gate structure wraps the first nanosheets and the second nanosheets, wherein a first thickness of at least one of the first nanosheets is smaller than a second thickness of at least one of the second nanosheets.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first fin structure and a second fin structure. Each of the first fin structure and the second fin structure has multiple sacrificial layers and multiple semiconductor layers laid out in an alternating manner, and the first fin structure is substantially as wide as the second fin structure. The method also includes forming a gate stack wrapped around the first fin structure and the second fin structure. The method further includes simultaneously removing the sacrificial layers of the first fin structure and the second fin structure. Remaining portions of the semiconductor layers of the first fin structure form multiple first semiconductor nanostructures, and remaining portions of the semiconductor layers of the second fin structure form multiple second semiconductor nanostructures. Each of the first semiconductor nanostructures is thicker than each of the second semiconductor nanostructures.

Abstract: The present invention discloses a vascular bone organoid and its compression-perfusion fabricator system. The compression-perfusion fabricator system includes a compression device, a perfusion chamber, a perfusion device, and a microcomputer driver. The compression device and the perfusion device are controlled and adjusted through the microcomputer driver to simultaneously provide dynamic mechanical compression and perfusion stimulation. The system simulates the dynamic microenvironment within the human body. The present invention further utilizes 3D bioprinting technology to manufacture a vascular bone organoid, which is cultured in the compression-perfusion fabricator system, to mimic the growth of bone and vascular endothelial cells within the normal dynamic physiological environment of the bone marrow cavity.

Abstract: An electric power tool includes a housing, a motor disposed in the housing, an output shaft connected to the motor and extending out of the housing, a magnetic ring sleeved on the output shaft, a magnetic polarity detector circuit disposed in proximity to the magnetic ring, and a controller connected to the motor and the magnetic polarity detector circuit. The output shaft is driven by the motor to rotate about its axis. The magnetic ring synchronously rotates with the output shaft, and has magnetic portions surrounding the output shaft. Every adjoining two of the magnetic portions have different magnetic polarities. The magnetic polarity detector circuit detects a change of magnetic polarities. The controller controls the motor to stop operating when an inter-change time interval satisfies a predetermined condition.

Abstract: A semiconductor device includes a supporting structure, a die stack, and a redistribution circuit structure. The die stack is disposed over the supporting structure and includes a first semiconductor die comprising a substrate and a second semiconductor die, where the first semiconductor die is between the second semiconductor die and the supporting structure, and a material of the supporting structure is different from a material of the substrate of the first semiconductor die. The redistribution circuit structure is disposed over the die stack and electrically coupled to the first semiconductor die and the second semiconductor die.

Abstract: A carbon capture device is described. The carbon capture device comprises a carbon capture film for capturing carbon dioxide; and an exposure mechanism for exposing a portion of the carbon capture film to a surrounding environment for capturing carbon dioxide. The exposure mechanism comprises a receiver for receiving an exposed portion of the carbon capture film and a storage for holding an unexposed portion of the carbon capture film, wherein the receiver is adapted to be connected to a portion of a leading end of the carbon capture film and to convey the unexposed portion of the carbon capture film from the storage to the receiver for exposing the portion of the carbon capture film to the surrounding environment. A method of using the carbon capture device for carbon capture is also described.

Abstract: A semiconductor structure includes a semiconductor fin protruding from a substrate and oriented lengthwise along a first direction, a dielectric fin disposed over the substrate and oriented lengthwise along a second direction perpendicular to the first direction, where the dielectric fin defines a sidewall of the semiconductor fin along the second direction and where the dielectric fin includes a first dielectric layer disposed over a second dielectric layer that differs from the first dielectric layer in composition, and a metal gate stack disposed over the semiconductor fin and oriented lengthwise along the second direction.

Abstract: A method for modifying a surface of a substrate and a method for immobilizing oligonucleotide are provided. The method includes the following steps. A substrate is provided. A branched polymer is grafted on a surface of the substrate, wherein a side chain of a repeating unit of the branched polymer has a group capable of binding to an oligonucleotide. One end of the branched polymer has a group capable of binding to the surface of the substrate.

Abstract: The disclosure relates to Epstein-Barr virus ribonucleic acid vaccines as well as methods of using the vaccines and compositions comprising the vaccines.

Abstract: A method for detecting a specific object based on a specific model includes: capturing a set of images, wherein objects in each image include a desired object; transmitting the set of images to a cloud server; in response to found objects being obtained from the set of images based on at least one object detection algorithm in the cloud server, displaying the found objects fora user to confirm which object is desired; in response to the desired object being confirmed from the found objects that are displayed, loading the specific model of the desired object from the cloud server, wherein the specific model of the desired object is trained on the cloud server based on at least the set of images and related CNN algorithm; and performing the specific model to detect the specific object on a captured image.

Abstract: An atomic layer deposition system is provided, including: a main body, a platform, a gas distribution showerhead assembly and a first ring member. The main body defines a reaction chamber, and the platform is located in the reaction chamber. The gas distribution showerhead assembly is disposed on the main body and includes at least one gas inlet channel and at least one gas diffusion plate. Each of the at least one gas diffusion plate includes a plurality of through holes. The first ring member defines a radial direction and is disposed between the platform and the at least one gas diffusion plate. A region of the at least one gas diffusion plate distributed with the plurality of through holes defines an outermost distribution profile. An inner circumferential wall of the first ring member and the outermost distribution profile keep a distance in the radial direction.