Base for a multi-chamber semiconductor

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Description

FIG. 1 is a top, front, and right side perspective view of a base for a multi-chamber semiconductor, showing our new design;

FIG. 2 is a front elevational view thereof;

FIG. 3 is a rear elevational view thereof;

FIG. 4 is a left side elevation view thereof;

FIG. 5 is a right side elevation view thereof;

FIG. 6 is a top plan view thereof;

FIG. 7 is a bottom plan view thereof; and,

FIG. 8 is an enlarged view of encircled portion “8” in FIG. 1.

The broken lines in the drawings illustrate portions of a base for a multi-chamber semiconductor which form no part of the claimed design.

The dashed dot line showing the boundary of the enlarged portion view of FIG. 8 in FIGS. 1 and 8 form no part of the claimed design.

Claims

The ornamental design for a base for a multi-chamber semiconductor, as shown and described.

Referenced Cited
U.S. Patent Documents
4410927 October 18, 1983 Butt
5541525 July 30, 1996 Wood
6175084 January 16, 2001 Saitoh
D441726 May 8, 2001 Sofue
6252179 June 26, 2001 Lauffer
D507248 July 12, 2005 Hisaishi
D507545 July 19, 2005 Nakamura
D516046 February 28, 2006 Nakamura
D525215 July 18, 2006 Hisaishi
7511961 March 31, 2009 Tschirbs
8897015 November 25, 2014 Feller
D923591 June 29, 2021 Aoki
D999747 September 26, 2023 Tanikawa
Patent History
Patent number: D1049066
Type: Grant
Filed: Feb 28, 2022
Date of Patent: Oct 29, 2024
Assignee: SYSKEY TECHNOLOGY CO., LTD. (Hsinchu County)
Inventors: Hsueh-Hsien Wu (Hsinchu), Chih-Yuan Chan (Hsinchu County), Yi-Ting Lai (Hsinchu County)
Primary Examiner: Elizabeth J Oswecki
Application Number: 29/828,660