Base for a multi-chamber semiconductor
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The broken lines in the drawings illustrate portions of a base for a multi-chamber semiconductor which form no part of the claimed design.
The dashed dot line showing the boundary of the enlarged portion view of
Claims
The ornamental design for a base for a multi-chamber semiconductor, as shown and described.
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Type: Grant
Filed: Feb 28, 2022
Date of Patent: Oct 29, 2024
Assignee: SYSKEY TECHNOLOGY CO., LTD. (Hsinchu County)
Inventors: Hsueh-Hsien Wu (Hsinchu), Chih-Yuan Chan (Hsinchu County), Yi-Ting Lai (Hsinchu County)
Primary Examiner: Elizabeth J Oswecki
Application Number: 29/828,660