Abstract: The present disclosure provides a memory device, a semiconductor device, and a method of operating a memory device. A memory device includes a memory cell, a bit line, a word line, a select transistor, a fuse element, and a heater. The bit line is connected to the memory cell. The word line is connected to the memory cell. The select transistor is disposed in the memory cell. A gate of the select transistor is connected to the word line. The fuse element is disposed in the memory cell. The fuse element is connected to the bit line and the select transistor. The heater is configured to heat the fuse element.

Abstract: The present disclosure is directed to method for the fabrication of spacer structures between source/drain (S/D) epitaxial structures and metal gate structures in nanostructure transistors. The method includes forming a fin structure with alternating first and second nanostructure elements on a substrate. The method also includes etching edge portions of the first nanostructure elements in the fin structure to form cavities. Further, depositing a spacer material on the fin structure to fill the cavities and removing a portion of the spacer material in the cavities to form an opening in the spacer material. In addition, the method includes forming S/D epitaxial structures on the substrate to abut the fin structure and the spacer material so that sidewall portions of the S/D epitaxial structures seal the opening in the spacer material to form an air gap in the spacer material.

Abstract: In some embodiments, the present disclosure relates to an integrated circuit (IC) in which a memory structure comprises an inhibition layer inserted between two ferroelectric layers to create a tetragonal-phase dominant ferroelectric structure. In some embodiments, the ferroelectric structure includes a first ferroelectric layer, a second ferroelectric layer overlying the first ferroelectric layer, and a first inhibition layer disposed between the first and second ferroelectric layers and bordering the second ferroelectric layer. The first inhibition layer is a different material than the first and second ferroelectric layers.

Abstract: A portable data accessing device and more particularly the use of multi-port interfaces on a data accessing device disclosed. The multi-port data accessing device includes an inner body, one or a plurality of moving-caps, one or a plurality of grips, a pump-action and one or a plurality of locking/releasing mechanisms.

Abstract: A controlling method for a wireless communication device is provided. The controlling method for the wireless communication device includes: attaching a first Universal Subscriber Identity Module (USIM) to a Long-Term Evolution (LTE) network; determining whether a second USIM is camped on the LTE network; detecting whether a paging collision is happened, if the second USIM is camped on the LTE network; generating a requested International Mobile Subscriber Identity (IMSI) offset for the second USIM, if the paging collision is happened, wherein the requested IMSI offset is 1 or min(T, nB)?1, T is a default paging period and nB is a number of paging occurrences within the default paging period; transmitting an attach request with the requested IMSI offset to the LTE network for the second USIM; receiving a negotiated IMSI offset from the LTE network; and attaching the second USIM to the LTE network with the negotiated IMSI offset.

Abstract: A semiconductor device includes a logic circuit region having at least one core device and at least one input/output (I/O) device. The at least one core device has a first accumulative antenna ratio, and the at least one I/O device has a second accumulative antenna ratio. The first accumulative antenna ratio is greater than the second accumulative antenna ratio.

Abstract: A semiconductor may include an active region, an epitaxial source/drain formed in and extending above the active region, and a first dielectric layer formed over a portion of the active region. The semiconductor may include a first metal gate and a second metal gate formed in the first dielectric layer, a second dielectric layer formed over the first dielectric layer and the second metal gate, and a titanium layer, without an intervening fluorine residual layer, formed on the metal gate and the epitaxial source/drain. The semiconductor may include a first metal layer formed on top of the titanium on the first metal gate, a second metal layer formed on top of the titanium layer on the epitaxial source/drain, and a third dielectric layer formed on the second dielectric layer. The semiconductor may include first and second vias formed in the third dielectric layer.

Abstract: A method for assessing occurrence of heart failure includes the following steps. A heart failure assessment program established is provided. A target ECG signal data of the subject is provided, wherein the target ECG signal data includes a plurality of target heartbeat waveform data and a plurality of target heart rate data. A data pre-processing step is performed, wherein the target ECG signal data is pre-processed by the data processing module so as to obtain a processed target ECG signal data. An analyzing step is performed, wherein the processed target ECG signal data is analyzed by the heart failure assessment program so as to obtain a heart failure occurrence assessing result, and the heart failure occurrence assessing result presents a heart failure occurring condition and the severity of the heart failure of the subject.

Abstract: A heat dissipation system of an electronic device including a body, a plurality of heat sources disposed in the body, and at least one centrifugal heat dissipation fan disposed in the body is provided. The centrifugal heat dissipation fan includes a housing and an impeller disposed in the housing on an axis. The housing has at least one inlet on the axis and has a plurality of outlets in different radial directions, and the plurality of outlets respectively correspond to the plurality of heat sources.

Abstract: An image processing circuit includes a receiving circuit, a transmitting circuit, a first asynchronous handshake circuit, a super resolution scale-up model and a second asynchronous handshake circuit. The receiving circuit is arranged to receive an input image with a first pixel clock frequency. The first asynchronous handshake circuit is arranged to receive the input image from the receiving circuit according to a receiving timing. The super resolution scale-up model is arranged to scale up the input image to generate an output image with a second pixel clock frequency. The second asynchronous handshake circuit is arranged to output the output image to the transmitting circuit according to a transmitting timing to transmit the output image, wherein the first asynchronous handshake circuit, the super resolution scale-up model, and the second asynchronous handshake circuit operate at a clock frequency independent of the first pixel clock frequency and the second pixel clock frequency.

Abstract: A computing device obtains an image depicting a face of a user. The computing device identifies facial features in the image and extracts characteristics of the facial features in the image. The computing device generates a two-dimensional (2D) face chart based on the facial feature characteristics. The computing device predicts a skin tone of the user's face depicted in the image of the user and changes color in a color map of a predefined three-dimensional (3D) model based on the predicted skin tone. The computing device selects a predefined environment map based on characteristics in the image depicting the face of the user and generates a target face image based on the predefined 3D model.

Abstract: A super resolution (SR) image generation circuit includes an image scale-up circuit, a stable SR processing circuit, a generative adversarial network (GAN) processing circuit, and a configurable basic block pool circuit. The image scale-up circuit is arranged to receive and process an input image to generate a scaled-up image. The stable SR processing circuit is arranged to receive a feature map of the input image to generate a stable delta value. The GAN processing circuit is arranged to receive the feature map to generate a GAN delta value. The configurable basic block pool circuit is arranged to dynamically configure a plurality of basic blocks according to a depth requirement of the input image, to generate a configuration result. The SR image generation circuit generates an SR image according to the scaled-up image, the stable delta value, and the GAN delta value.

Abstract: A chip package with electromagnetic interference (EMI) shielding layer and a method of manufacturing the same are provided. The chip package includes a chip, a redistribution layer (RDL), an insulating layer, and an electromagnetic interference (EMI) shielding layer. A peripheral wall is formed around at least one first opening of the insulating layer for enclosing the first opening and a flat portion is disposed around the peripheral wall while a level of the flat portion is lower than a level of the peripheral wall. The flat portion of the insulating layer is covered with the EMI shielding layer which is isolated and electrically insulated from a pad in the first opening by the peripheral wall of the insulating layer. Thereby problems of the chip including fast increase in temperature and electromagnetic interference can be solved effectively.

Abstract: The present disclosure relates to a method for fabricating a semiconductor structure. The method includes providing a substrate with a gate structure, an insulating structure over the gate structure, and a S/D region; depositing a titanium silicide layer over the S/D region with a first chemical vapor deposition (CVD) process. The first CVD process includes a first hydrogen gas flow. The method also includes depositing a titanium nitride layer over the insulating structure with a second CVD process. The second CVD process includes a second hydrogen gas flow. The first and second CVD processes are performed in a single reaction chamber and a flow rate of the first hydrogen gas flow is higher than a flow rate of the second hydrogen gas flow.

Abstract: A system for faster object attribute and/or intent classification may include an machine-learned (ML) architecture that processes temporal sensor data (e.g., multiple instances of sensor data received at different times) and includes a cache in an intermediate layer of the ML architecture. The ML architecture may be capable of classifying an object's intent to enter a roadway, idling near a roadway, or active crossing of a roadway. The ML architecture may additionally or alternatively classify indicator states, such as indications to turn, stop, or the like. Other attributes and/or intentions are discussed herein.

Abstract: Methods of forming contacts for source/drain regions and a contact plug for a gate stack of a finFET device are disclosed herein. Methods include etching a contact opening through a dielectric layer to expose surfaces of a first source/drain contact and repairing silicon oxide structures along sidewall surfaces of the contact opening and along planar surfaces of the dielectric layer to prevent selective loss defects from occurring during a subsequent selective deposition of conductive fill materials and during subsequent etching of other contact openings. The methods further include performing a selective bottom-up deposition of conductive fill material to form a second source/drain contact. According to some of the methods, once the second source/drain contact has been formed, the contact plug may be formed over the gate stack.

Abstract: An integrated circuit product includes a first chip, a second chip, a third chip, a fourth chip, a fifth chip, a sixth chip, a seventh chip, and an eighth chip. The areas and constituent components of the first chip, the second chip, the third chip, and the fourth chip are substantially the same. The areas and constituent components of the fifth chip, the sixth chip, the seventh chip, and the eighth chip are substantially the same. The first chip, the second chip, the third chip, and the fourth chip are respectively arranged on the four sides of the integrated circuit product. The fifth chip, the sixth chip, the seventh chip, and the eighth chip are arranged in a central area of the integrated circuit product.

Abstract: A lid attach process includes dipping a periphery of a lid in a dipping tank of adhesive material such that the adhesive material attaches to the periphery of the lid. The lid attach process further includes positioning the lid over a die attached to a substrate using a lid carrier, wherein the periphery of the lid is aligned with a periphery of the lid carrier. The lid attach process further includes attaching the lid to the substrate with the adhesive material forming an interface with the substrate. The lid attach process further includes contacting a thermal interface material (TIM) on the die with the lid.

Abstract: A disc tumbler cylinder lock has a lock cylinder base, multiple discs, and multiple gaskets. The lock cylinder base has an accommodating space, a position limiting opening, and an accommodating opening. Each of the discs has a position limiting protrusion and a disc notch. Each of the gaskets has a ring body, a position limiting segment, and a rotation limiting segment. The position limiting segment protrudes outward from an outer annular surface of the ring body along a radial direction. The rotation limiting segment protrudes from the position limiting segment along an axial direction of the lock sleeve. The discs and the gaskets are staggeredly accommodated in the accommodating space. A side surface of the position limiting protrusion abuts a side surface of the position limiting opening. Two sides of the position limiting segment abut two opposite sides of the position limiting opening.

Abstract: A resistive memory apparatus including a memory cell array, at least one dummy transistor and a control circuit is provided. The memory cell array includes a plurality of memory cells. Each of the memory cells includes a resistive switching element. The dummy transistor is electrically isolated from the resistive switching element. The control circuit is coupled to the memory cell array and the dummy transistor. The control circuit is configured to provide a first bit line voltage, a source line voltage and a word line voltage to the dummy transistor to drive the dummy transistor to output a saturation current. The control circuit is further configured to determine a value of a second bit line voltage for driving the memory cells according to the saturation current. In addition, an operating method and a memory cell array of the resistive memory apparatus are also provided.