Abstract: The present disclosure is directed to an in situ closed-loop radio frequency (RF) power management on RF processes such as a plasma etch process, a plasma chemical vapor deposition process, a plasma physical vapor deposition process, a plasma clean process, or the like. An RF power measurement device according to one or more embodiments of the present disclosure assists the in situ closed-loop RF power management on RF processes. In some embodiments, the RF power measurement device includes a coil-shaped current sensor that is wound around the path between an RF generator and a chamber. The coil-shaped current sensor senses the current flowing through this path so that the power of the RF generator may be calibrated without having to separate the RF generator for separate analysis and calibration. The RF power measurement device allows management of RF power in an in situ closed-loop manner.

Abstract: An immersion cooling system is provided. The immersion cooling system includes a box, an upper cover, plural fixing components, plural latches and a link module. The box has an opening upwardly. The upper cover covers the opening. The fixing components are disposed on the box and arranged adjacent to the outer perimeter of the opening. The latches corresponding to the fixing components are disposed on the upper cover. The link module includes plural crossbars corresponding to the latches. The link module moves downwardly close to the upper cover, scroll-wheels of the latches roll along limiting surfaces of corresponding fixing components and press against the upper cover, the upper cover closes the opening to form an airtight space. The link module moves upwardly away from the upper cover, the scroll-wheels are separated away from the limiting surfaces of corresponding fixing components, allows the upper cover to separate from the opening.

Abstract: In one aspect, a method includes depositing magnetoresistance (MR) layers of a MR element on a semiconductor structure; depositing a first hard mask on the MR layers; depositing and patterning a first photoresist on the first hard mask using photolithography to expose portions of the first hard mask; etching the exposed portions of the first hard mask; etching a portion of the MR layers using the first hard mask; depositing a second hard mask on a first capping layer; depositing and patterning a second photoresist on the second hard mask using photolithography to expose portions of the second hard mask; etching the exposed portions of the second hard mask; etching the MR element using the second hard mask; etching portions of the first hard mask down to a top MR layer of the MR element; and depositing a conducting material on the top MR layer to form an electroconductive contact.

Abstract: The embodiments of the disclosure provide a manufacturing method of a package circuit, including the following steps. A circuit structure including a plurality of conductive pads is formed. A liquid crystal layer is formed on the circuit structure. An inspection step is performed, and the inspection step includes determining the conductivity of the conductive pads according to the result of the rotation of a liquid crystal layer oriented with an electric field. In addition, the liquid crystal layer is removed.

Abstract: The present disclosure provides an electronic device including a conductive element, a first insulating layer, an extending element, and a second insulating layer disposed on a substrate. At least a portion of the first insulating layer is located between the conductive element and the extending element. The second insulating layer is disposed on the conductive element and the extending element. In a cross-sectional view, a thickness of the first insulating layer is different from a thickness of the second insulating layer. In a top view, the extending element has a first portion extending to an edge of the substrate, the extending element has a second portion connecting the first portion and disposed between the first portion and the conductive element, and the first minimum width of the first portion is less than the second minimum width of the second portion.

Abstract: A semiconductor structure and a method of forming the same are provided. In an embodiment, an exemplary semiconductor structure includes a gate structure. The gate structure includes a gate dielectric layer, an n-type work function layer embedded in the gate dielectric layer, a dielectric capping layer embedded in the n-type work function layer, and a p-type work function layer embedded in the dielectric capping layer. A top surface of the gate structure exposes the n-type work function layer, the dielectric capping layer, and the p-type work function layer. The semiconductor structure also includes a first metal cap on the n-type work function layer and a second metal cap on the p-type work function layer. The first metal cap is spaced apart from the second metal cap. without formed on the dielectric capping layer.

Abstract: An electronic device interfaced with a multiple digital signatures security engine, internally or externally, which enable the device to obtain PUF-based security credentials with the option to generate multiple unique digital signatures from the same source of PUF entropy. The multiple digital signatures security zone includes a source of PUF entropy dynamically measurable, a non-volatile memory storage media and a digital circuitry performing all the functions requested by the electronic device interfaced. The electronic device is able to select and switch between which unique digital signature to be involved for its related cybersecurity applications without depending on power-up sequences or single time operations after power-up sequence.

Abstract: A method that forms a sacrificial fill material that can be selectively removed for forming a backside contact via for a transistor backside power rail. In some embodiments, the method may include performing an etching process on a substrate with an opening that is conformally coated with an oxide layer, wherein the etching process is an anisotropic dry etch process using a chlorine gas to remove the oxide layer from a field of the substrate and only from a bottom portion of the opening, and wherein the etching process forms a partial oxide spacer in the opening and increases a depth of the opening and epitaxially growing the sacrificial fill material in the opening by flowing a hydrogen chloride gas at a rate of approximately 60 seem to approximately 90 seem in a chamber pressure of approximately 1 Torr to approximately 100 Torr.

Abstract: An X-ray measurement system with high signal resolution is provided. The X-ray measurement system includes an X-ray generator, an X-ray optical element group, a multi-dimensional X-ray detector and a processing device. The X-ray generator is configured to generate an incident X-ray beam. X-ray optics are used to guide the incident X-ray beam to a to-be-tested sample. The multi-dimensional X-ray detector is used to receive the measurement X-ray generated by irradiating the incident X-ray beam on the to-be-tested sample. The multi-dimensional X-ray detector includes an insulation layer, a plurality of first electrode layers, a photodiode layer, an X-ray conversion material layer made of amorphous selenium, and a second electrode layer. The processing device is configured to collect a to-be-tested X-ray signal and generate a plurality of measurement results that include a plurality of mode signals of different orders.

Abstract: An electronic device includes an element layer and transducing structures. The element layer includes island portions, bridge portions and openings. The island portions have pixel structures. Each of the pixel structures includes a thin film transistor and at least one light-emitting element electrically connected to the thin film transistor. The bridge portions connect the island portions. The island portions and the bridge portions define the openings. Each of the openings has a top side and a bottom side opposite to each other. The at least one light emitting element is located on the top side. Each of the transducing structures overlaps a corresponding opening. Each of the transducing structures includes a first electrode disposed on the bottom side of the opening 10 and a second electrode disposed on the top side of the opening, wherein a portion of the opening is a cavity of the transducing structure.

Abstract: Multi-gate devices and methods for fabricating such are disclosed herein. An exemplary method includes forming an n-type work function layer in a gate trench in a gate structure, wherein the n-type work function layer is formed around first channel layers in a p-type gate region and around second channel layers in an n-type gate region, forming a first metal fill layer in a first gate trench over the n-type work function layer in the p-type gate region and in a second gate trench over the n-type work function layer in the n-type gate region, removing the first metal fill layer from the p-type gate region, removing the n-type work function layer from the p-type gate region, forming a p-type work function layer in the first gate trench of the p-type gate region, and forming a second metal fill layer in the first gate trench of the p-type gate region.

Abstract: The present disclosure provides a redistribution structure that includes a metal line, a first dielectric layer disposed over the metal line, a first etch stop layer (ESL) disposed over the first dielectric layer, a second dielectric layer disposed over the first ESL, and a conductive via extending through the second dielectric layer, the first ESL and the first dielectric layer to contact the metal line. A lower portion of the second dielectric layer extends downward through the first ESL and the first dielectric layer and partially into the metal line.

Abstract: Distributed journaling for write operations to RAID systems is disclosed, including: receiving a new write operation to a plurality of storage devices associated with a redundant array of independent disks (RAID) group, wherein the plurality of storage devices comprises a main data storage and a non-volatile journal storage; writing a record of the new write operation to the non-volatile journal storage; after the record of the new write operation is written to the non-volatile journal storage, writing new data associated with the new write operation to the main data storage; and after the new data associated with the new write operation is written to the main data storage, invalidating the record of the new write operation in the non-volatile journal storage, wherein upon restarting the plurality of storage devices associated with the RAID group, the non-volatile journal storage is checked and valid records of one or more write operations included in the non-volatile journal storage are written to the main d

Abstract: An electronic device comprises a heat source and a heat distribution structure coupled to the heat source to distribute heat generated by the heat source during operation of the electronic device.

Abstract: A first video stream comprising a first image of a first participant of a virtual meeting, a second image of a second participant, and a third image of a third participant are received from a first client device connected to a virtual meeting platform. It is determined whether an image combining condition is satisfied. Responsive to determining that the image combining condition is satisfied with respect to the first image and the second image, a first screen tile comprising the first image and the second image is generated. A first size of the first screen tile is defined based on a number of images comprised by the first screen tile. A second screen tile comprising the third image is generated. A virtual meeting user interface comprising the first screen tile and the second screen tile is provided for presentation on a second client device connected to the virtual meeting platform.

Abstract: A rotation mechanism, includes a middle housing (1), a first support (2) and a second support (3), a first end of the first support is rotatably connected to the middle housing, and a second end of the first support is fixedly connected to a first housing; a first end of the second support is rotatably connected to the middle housing, and a second end of the second support is fixedly connected to a second housing.

Abstract: A passivation layer is formed over an interconnect structure. An opening is etched at least partially through the passivation layer. A first conductive layer is deposited over the passivation layer. The first conductive layer partially fills the opening. An insulator layer is deposited over the first conductive layer. The insulator layer partially fills the opening. A second conductive layer is deposited over the insulator layer. The second conductive layer completely fills the opening. A first conductive structure is formed that is electrically coupled to the first conductive layer. A second conductive structure is formed that is electrically coupled to the second conductive layer.

Abstract: An electronic device is provided and includes a first conductive structure, a second conductive structure, a third conductive structure, a first insulating layer, a second insulating layer, a conductive element, an electronic component, and a plurality of passive components. The first insulating layer is disposed between the first conductive structure and the second conductive structure, and the second insulating layer is disposed between the second conductive structure and the third conductive structure. The second conductive structure is electrically connected to the first conductive structure at a first position, and the third conductive structure is electrically connected to the second conductive structure at a second position, wherein a center point of the first position and a center point of the second position is misaligned along a normal direction of a surface of the first insulating layer.