Abstract: A pose calculating apparatus and method are provided. The pose calculating apparatus receives a plurality of real-time images and a plurality of inertial measurement parameters corresponding to at least one inertial sensor worn by a user. The pose calculating apparatus determines a pose calculating mode corresponding to each of a plurality of body regions of the user based on the real-time images and the inertial measurement parameters, wherein the pose calculating mode corresponds to a static mode or a motion mode. The pose calculating apparatus calculates a pose corresponding to each of the body regions based on the pose calculating mode corresponding to each of the body regions.

Abstract: An appliance heating control method and apparatus for user customizable vaping. The method comprises: acquiring appliance environment information and cigarette parameter information, and selecting, from a cigarette heating temperature curve library corresponding to the cigarette parameter information, an initial heating temperature curve that matches the appliance environment information; generating parameter adjustment guidance information on the basis of the initial heating temperature curve, and displaying the initial heating temperature curve and the parameter adjustment guidance information; and receiving a parameter adjustment instruction, adjusting the initial heating temperature curve on the basis of the parameter adjustment instruction, so as to obtain an adjusted heating temperature curve, and controlling, according to the adjusted heating temperature curve, an appliance to perform heating.

Abstract: An airflow guiding mechanism includes a casing and an airflow guiding member. The airflow guiding member is rotatably disposed in the casing. The airflow guiding member is able to rotate between a first position and a second position. When the airflow guiding member is located at the first position, the airflow guiding member separates two airflow passages at opposite sides of the airflow guiding member from each other. When the airflow guiding member is located at the second position, the two airflow passages communicate with each other.

Abstract: The present application provides an application of Chidamide in combination with R-CHOP in preparing a drug used for treating B-cell lymphoma, and also provides a drug comprising Chidamide and R-CHOP. Chidamide in combination with R-CHOP has a synergistic therapeutic effect on B-cell lymphoma.

Abstract: The present disclosure provides a package device including a redistribution layer. The redistribution layer includes a first dielectric layer, a conductive layer, and a second dielectric layer, and the conductive layer is disposed between the first dielectric layer and the second dielectric layer, wherein the redistribution layer has a test mark, the test mark includes a conductive pattern formed of the conductive layer, the conductive pattern includes a center portion and a plurality of extension portions, and the plurality of extension portions are respectively connected to the center portion.

Abstract: One aspect of the present disclosure pertains to an integrated (IC) structure. The IC structure includes a semiconductor substrate; an interconnect structure formed over the substrate; and a redistribution layer (RDL) structure formed over the interconnect structure. The RDL structure includes: a RDL pad portion having a pad via array with multiple vias landing on a first top metal line of the interconnect structure; a RDL signal routing portion having a signal routing via landing on a second top metal line of the interconnect structure; and a RDL top portion over the RDL pad portion and the RDL signal routing portion. The multiple vias of the pad via array include a block via and an adjacent sacrificial via, the block via having a block via width, the sacrificial via having a sacrificial via width, and the block via width is greater than the sacrificial via width.

Abstract: An immersion cooling system includes a tank, a first condenser, an enclosure, a second condenser and a connecting pipe. The tank has a first space. The first space is configured to accommodate a cooling liquid for at least one electronic equipment to immerse therein. The first condenser is disposed inside the tank. The enclosure is disposed outside the tank. The enclosure forms a second space together with the tank. The second condenser is disposed in the second space. The connecting pipe includes a first end and a second end opposite to the first end. The first end is connected with the second condenser. The second end is communicated with the first space.

Abstract: This disclosure relates to an X-ray reflectometry apparatus and a method for measuring a three-dimensional nanostructure on a flat substrate. The X-ray reflectometry apparatus comprises an X-ray source, an X-ray reflector, a 2-dimensional X-ray detector, and a two-axis moving device. The X-ray source is for emitting X-ray. The X-ray reflector is configured for reflecting the X-ray onto a sample surface. The 2-dimensional X-ray detector is configured to collect a reflecting X-ray signal from the sample surface. The two-axis moving device is configured to control two-axis directions of the 2-dimensional X-ray detector to move on at least one of x-axis and z-axis with a formula concerning an incident angle of the X-ray with respect to the sample surface for collecting the reflecting X-ray signal.

Abstract: The present invention provides a method for ambient light detection, proximity sensing, and ambient light charging applied to a panel. The method includes: providing a display panel, wherein the display panel comprises a plurality of pixels with PN junctions units in a display area; and providing a driving circuit, wherein the driving circuit drives each display pixel or each PN junction unit through a display mode, a standby mode, and a blanking time, so that part of each display pixel or each PN junction unit is used to perform a display function and part of each display pixel or each PN junction unit is used to carry out the ambient light detection, proximity sensing, or ambient light charging.

Abstract: A method and a system for manufacturing a semiconductor package structure are provided. The method includes: (a) providing a package body including at least one semiconductor device encapsulated in an encapsulant; (b) providing a flattening force to the package body; (c) thinning the package body after (b); (d) attaching a film to the package body; and (e) releasing the flattening force after (d).

Abstract: The present disclosure provides a semiconductor device with a profiled work-function metal gate electrode. The semiconductor structure includes a metal gate structure formed in an opening of an insulating layer. The metal gate structure includes a gate dielectric layer, a barrier layer, a work-function metal layer between the gate dielectric layer and the barrier layer and a work-function adjustment layer over the barrier layer, wherein the work-function metal has an ordered grain orientation. The present disclosure also provides a method of making a semiconductor device with a profiled work-function metal gate electrode.

Abstract: Semiconductor processing methods are described that include providing a substrate to a reaction chamber, where the substrate includes substrate trenches that have a top surface and a bottom surface. A deposition gas that includes a carbon-containing gas and a nitrogen-containing gas flows into a plasma excitation region of the reaction chamber. A deposition plasma having an electron temperature less than or about 4 eV is generated from the deposition gas. The methods further include depositing a carbon-containing layer on the top surface and the bottom surface of the substrate trenches, where the as-deposited carbon-containing layer has a top surface-to-bottom surface thickness ratio of greater than or about 3:1. Also described are semiconductor structures that include an as-deposited carbon-containing layer on the top and bottom surface of at least a first and second trench, where the carbon-containing layer has a top surface-to-bottom surface thickness ratio of greater than or about 3:1.

Abstract: An immersion cooling system is provided. The immersion cooling system includes a box, an upper cover, plural fixing components, plural latches and a link module. The box has an opening upwardly. The upper cover covers the opening. The fixing components are disposed on the box and arranged adjacent to the outer perimeter of the opening. The latches corresponding to the fixing components are disposed on the upper cover. The link module includes plural crossbars corresponding to the latches. The link module moves downwardly close to the upper cover, scroll-wheels of the latches roll along limiting surfaces of corresponding fixing components and press against the upper cover, the upper cover closes the opening to form an airtight space. The link module moves upwardly away from the upper cover, the scroll-wheels are separated away from the limiting surfaces of corresponding fixing components, allows the upper cover to separate from the opening.

Abstract: The present invention provides an ambient light sensor with ultraviolet light detection function, which is adopted to receive external light for sensing. The ambient light sensor comprises a visible light sensing chip and a wavelength conversion layer. The visible light sensing chip is used for sensing light corresponding to the response band of visible light, and the visible light sensing chip includes a light receiving surface. The wavelength conversion layer is used to convert light corresponding to a specific ultraviolet light band of the external light into light corresponding to a response band of visible light, and the wavelength conversion layer covers at least a part of the light receiving surface.

Abstract: A method of manufacturing a gate structure includes at least the following steps. A gate dielectric layer is formed. A work function layer is deposited on the gate dielectric layer. A barrier layer is formed on the work function layer. A metal layer is deposited on the barrier layer to introduce fluorine atoms into the barrier layer. The barrier layer is formed by at least the following steps. A first TiN layer is formed on the work function layer. A top portion of the first TiN layer is converted into a trapping layer, and the trapping layer includes silicon atoms or aluminum atoms. A second TiN layer is formed on the trapping layer.

Abstract: A package structure and a method are provided. The package structure includes: a die pad; a plurality of discrete leads disposed on either side of or around the die pad, wherein each of the leads includes an upper surface and a lower surface, a trench extending through a portion of the lower surface and a portion of an outer sidewall surface of a lead being formed in a region, away from the die pad, of the lead, a lateral hole being formed in the lead on a side surface of the trench, the lateral hole communicating with the trench to form a step; a first molding layer filling the gaps between the leads and the die pad; a semiconductor chip disposed on an upper surface of the die pad; and a second molding layer disposed on an upper surface of the first molding layer, the lead, and the die pad.

Abstract: An electronic device includes a substrate, a first conductive structure, a second conductive structure, a first wire, and a second wire. The substrate includes a peripheral region. The first conductive structure is in the peripheral region and includes a first conductive layer and a second conductive layer. The first and the second conductive layer are arranged along a first direction. The second conductive structure is in the peripheral region and includes a third conductive layer. The first and the second conductive structure are arranged along a second direction, which is perpendicular to the first direction. The first wire is in the peripheral region and is electrically connected between the first and the third conductive layer. The second wire is in the peripheral region and is electrically connected to the second conductive layer. The first wire is adjacent to the second wire along the first direction.

Abstract: Semiconductor devices having improved gate electrode structures and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a gate structure over a semiconductor substrate, the gate structure including a high-k dielectric layer; an n-type work function layer over the high-k dielectric layer; an anti-reaction layer over the n-type work function layer, the anti-reaction layer including a dielectric material; a p-type work function layer over the anti-reaction layer, the p-type work function layer covering top surfaces of the anti-reaction layer; and a conductive cap layer over the p-type work function layer.

Abstract: The application relates to a method for manufacturing an electronic device, and in particular, to a method for manufacturing an electronic device with a carrier substrate. The method includes: providing a carrier, forming a first base layer on the carrier; and forming working units on the first base layer. The working units are spaced apart from one another.

Abstract: The present disclosure provides a package device and a manufacturing method thereof. The package device includes a redistribution layer which includes a first dielectric layer, a conductive layer and a second dielectric layer. The conductive layer is disposed between the first dielectric layer and the second dielectric layer. The redistribution layer has a test pattern that includes a first conductive pattern, and the first conductive pattern is formed of the conductive layer.