Abstract: A semiconductor system includes a substrate. The substrate has a front side and a back side. A device is formed on the front side of the substrate. A vertical spring is etched in the substrate about the device. A trench is etched in the front side of the substrate about the device. A wall of the trench forms a side of the vertical spring.

Abstract: A micromechanical system (MEMS) acoustic wave resonator is formed on a base substrate. A piezoelectric member is mounted on the base substrate. The piezoelectric member has a first electrode covering a first surface of the piezoelectric member and a second electrode covering a second surface of the piezoelectric member opposite the first electrode, the second electrode being bounded by a perimeter edge. A first guard ring is positioned on the second electrode spaced apart from the perimeter edge of the second electrode.

Abstract: An acoustic-wave device includes a first electrode located over a substrate. A piezoelectric film is located over the first electrode and at least partially overlaps the first electrode. A second electrode is located over the piezoelectric film and at least partially overlaps the first electrode and the piezoelectric film. A temperature sensor is located in a same layer level as the first or second electrode. A heater may also be located in a same layer level as the first electrode. A closed-loop system may operate using the temperature sensor and the heater to maintain an operating temperature that provides highly stable operation.

Abstract: A MEMS resonator is operated at its parallel resonance frequency. An acoustic wave is propagated laterally away from a central region of the MEMS resonator through a piezoelectric layer of the MEMS resonator. The propagating acoustic wave is attenuated with concentric confiners that surround and are spaced apart from a perimeter of an electrode that forms the MEMS resonator.

Abstract: A micromechanical system (MEMS) resonator includes a base substrate. A piezoelectric layer has a first electrode attached to a first surface of the piezoelectric layer and a second electrode attached to a second surface of the piezoelectric layer opposite the first electrode. The first electrode is bounded by a perimeter edge. A patterned acoustic mirror is formed on a top surface of the first electrode opposite the piezoelectric layer, such that the patterned acoustic mirror covers a border strip of the top surface of the first electrode at the perimeter edge and does not cover an active portion of the top surface of the first electrode.

Abstract: A device includes a substrate having first and second layers and an insulator layer between the first and second layers. A microelectromechanical system (MEMS) structure is provide on a portion of the second layer. A trench is formed in the second layer and around at least a part of a periphery of the portion of the second layer. An undercut is formed in the insulator layer and adjacent to the portion of the second layer. The undercut separates the portion of the second layer from the first layer. First and second pinholes extend from a plane of the insulator layer and in the first layer. The first and second pinholes are in fluid communication with the undercut and the trench.

Abstract: A system includes a tunable bulk acoustic wave (BAW) resonator device and a direct-current (DC) tuning controller coupled to the tunable BAW resonator device. The system also includes an oscillator circuit coupled to the tunable BAW resonator device. The DC tuning controller selectively adjusts a DC tuning signal applied to the tunable BAW resonator device to adjust a signal frequency generated by the oscillator circuit.

Abstract: A clock oscillator includes with a pullable BAW oscillator to generate an output signal with a target frequency. The BAW oscillator is based on a BAW resonator and voltage-controlled variable load capacitance, responsive to a capacitance control signal to provide a selectable load capacitance. An oscillator driver (such as a differential negative gm transconductance amplifier), is coupled to the BAW oscillator to provide an oscillation drive signal. The BAW oscillator is responsive to the oscillation drive signal to generate the output signal with a frequency based on the selectable load capacitance. The oscillator driver can include a bandpass filter network with a resonance frequency substantially at the target frequency.

Abstract: In bulk acoustic wave (BAW) resonators having convex surfaces, an example BAW resonator includes a first electrode, a piezoelectric layer formed on the first electrode, the piezoelectric layer having a convex surface, and a second electrode formed on the convex surface. An example integrated circuit (IC) package includes a BAW resonator in the IC package, the BAW resonator including a piezoelectric layer having a convex surface.

Abstract: Unreleased plane acoustic wave (PAW) resonators are disclosed. An example unreleased PAW resonator includes a substrate, a first acoustic reflector disposed on the substrate, and a piezoelectric layer disposed on the first acoustic reflector, wherein the first acoustic reflector and the piezoelectric layer are unreleased from the substrate.

Abstract: A micromechanical system (MEMS) resonator includes a base substrate. A piezoelectric layer has a first electrode attached to a first surface of the piezoelectric layer and a second electrode attached to a second surface of the piezoelectric layer opposite the first electrode. The first electrode is bounded by a perimeter edge. A patterned acoustic mirror is formed on a top surface of the first electrode opposite the piezoelectric layer, such that the patterned acoustic mirror covers a border strip of the top surface of the first electrode at the perimeter edge and does not cover an active portion of the top surface of the first electrode.

Abstract: An electronic device comprises: a molybdenum layer; a bond pad formed on the molybdenum layer, the bond pad comprising aluminum; and a wire bonded to the bond pad, the wire comprising gold.

Abstract: An apparatus includes a microelectromechanical system (MEMS) die having a first surface and an opposing second surface. The MEMS die includes a surface-mounted resonator on the first surface and includes a first inductor. The apparatus also includes first and second dies. The first die has a third surface and an opposing fourth surface. The first die is coupled to the MEMS die such that the third surface of the first die faces the first surface of the MEMS die. The first and second surfaces are spaced apart. The first die includes an oscillator circuit and a second inductor. The oscillator circuit is coupled to the second inductor. The second inductor is inductively coupled to the first inductor. The second die is electrically coupled to the first die.

Abstract: A method for manufacturing a Bulk Acoustic Wave (BAW) resonator module is provided. The method includes providing a substrate, defining a platform region on the surface of the substrate, disposing a BAW resonator device on the surface of the substrate within the platform region, and etching an isolation trench circumscribing at least 50% of a circumference of the platform region.

Abstract: A MEMS resonator is operated at its parallel resonance frequency. An acoustic wave is propagated laterally away from a central region of the MEMS resonator through a piezoelectric layer of the MEMS resonator. The propagating acoustic wave is attenuated with concentric confiners that surround and are spaced apart from a perimeter of an electrode that forms the MEMS resonator.

Abstract: A clock oscillator includes with a pullable BAW oscillator to generate an output signal with a target frequency. The BAW oscillator is based on a BAW resonator and voltage-controlled variable load capacitance, responsive to a capacitance control signal to provide a selectable load capacitance. An oscillator driver (such as a differential negative gm transconductance amplifier), is coupled to the BAW oscillator to provide an oscillation drive signal. The BAW oscillator is responsive to the oscillation drive signal to generate the output signal with a frequency based on the selectable load capacitance. The oscillator driver can include a bandpass filter network with a resonance frequency substantially at the target frequency.

Abstract: A micromechanical system (MEMS) acoustic wave resonator is formed on a base substrate. A piezoelectric member is mounted on the base substrate. The piezoelectric member has a first electrode covering a first surface of the piezoelectric member and a second electrode covering a second surface of the piezoelectric member opposite the first electrode, the second electrode being bounded by a perimeter edge. A first guard ring is positioned on the second electrode spaced apart from the perimeter edge of the second electrode.

Abstract: Described examples include microelectronic devices and integrated circuits with an active first circuit in a first segment of a first wafer, a second circuit in a second segment of the first wafer, and second and third wafers bonded to different surfaces of the first wafer to provide first and second cavities with surfaces spaced from the first segment. An opening extends through the first wafer between the first and second cavities to separate portions of the first and second segments and to form a sealed cavity that surrounds the first segment. A bridge segment of the first wafer supports the first segment in the sealed cavity and includes one or more conductive structures to electrically connect the first and second circuits.

Abstract: A resonator includes a substrate, an acoustic Bragg mirror disposed above the substrate, and a bottom metal layer disposed above the acoustic Bragg mirror. The resonator also includes a piezoelectric plate disposed above the bottom metal layer. The resonator further includes a top metal layer disposed above the piezoelectric plate. The top metal layer comprises multiple fingers within a single plane and the width of each of the fingers is between 75%-125% of a thickness of the piezoelectric plate.

Abstract: An apparatus includes a microelectromechanical system (MEMS) die having a first surface and an opposing second surface. The MEMS die includes a surface-mounted resonator on the first surface and includes a first inductor. The apparatus also includes first and second dies. The first die has a third surface and an opposing fourth surface. The first die is coupled to the MEMS die such that the third surface of the first die faces the first surface of the MEMS die. The first and second surfaces are spaced apart. The first die includes an oscillator circuit and a second inductor. The oscillator circuit is coupled to the second inductor. The second inductor is inductively coupled to the first inductor. The second die is electrically coupled to the first die.