Patents by Inventor Ting Wang

Ting Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240072147
    Abstract: A semiconductor device includes a substrate, a shallow trench isolation structure, two epitaxial structures, one or more semiconductor channel layers, a gate metal layer and a gate spacer. The shallow trench isolation structure is disposed over the substrate. The epitaxial structures are disposed over the shallow trench isolation structure. The one or more semiconductor channel layers connect the two epitaxial structures. The gate metal layer is located between the epitaxial structures and engages the one or more semiconductor channel layers. The gate spacer is in contact with a sidewall of the gate metal layer. From a cross-section view, a neck portion of the gate metal layer adjacent to and along the one or more semiconductor channel layers, and one side of the neck portion is retracted by a distance relative to the gate spacer, and the distance is greater than 0 and less than or equal to 2 nanometers.
    Type: Application
    Filed: August 28, 2022
    Publication date: February 29, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kuan-Ting Pan, Kuo-Cheng Chiang, Chih-Hao Wang
  • Publication number: 20240069604
    Abstract: The electronic device includes a folding apparatus and a flexible display. The folding apparatus is configured to bear the flexible display. An elastic component of the folding apparatus may transfer an elastic force to the flexible display by using a housing of the folding apparatus. A force that is away from a main shaft and that is applied to the flexible display when the electronic device is in a flattened state is greater than a force that is away from the main shaft and that is applied to the flexible display when the electronic device is in a closed state.
    Type: Application
    Filed: August 10, 2021
    Publication date: February 29, 2024
    Inventors: Zhengyi Xu, Chunjun Ma, Linhui Niu, Ting Liu, Yunyong Li, Gangchao Wang, Chenghao Guan
  • Patent number: 11913472
    Abstract: A centrifugal heat dissipation fan including a housing and an impeller disposed in the housing on an axis is provided. The housing has at least one inlet on the axis and has a plurality of outlets in different radial directions. A heat dissipation system of an electronic device is also provided.
    Type: Grant
    Filed: April 6, 2021
    Date of Patent: February 27, 2024
    Assignee: Acer Incorporated
    Inventors: Tsung-Ting Chen, Wen-Neng Liao, Cheng-Wen Hsieh, Yu-Ming Lin, Wei-Chin Chen, Chun-Chieh Wang, Shu-Hao Kuo
  • Patent number: 11913727
    Abstract: The present invention discloses a flat heat pipe, comprising a bottom plate, a top plate, and a support plate located between the bottom plate and the top plate; a micron-level radial strip is processed on the inner surface of the bottom plate; the inner surface of the top plate is processed with superhydrophilic and superhydrophobic radial structures arranged at intervals to transport the condensate to the direction of the surrounding pipe wall; a wick is arranged on the inner side of the support plate. The present invention has the function of pumpless directional transport of liquid and convergence of refluxed condensate; thereby improving the heat exchange performance of the entire flat heat pipe.
    Type: Grant
    Filed: May 21, 2021
    Date of Patent: February 27, 2024
    Assignee: Xi'an Jiaotong University
    Inventors: Baojin Qi, Jinjia Wei, Ya Wang, Ting Yu, Chenyi Cui
  • Patent number: 11916125
    Abstract: Semiconductor device and the manufacturing method thereof are disclosed. An exemplary semiconductor device comprises a dielectric layer formed over a conductive feature; a semiconductor stack formed over the dielectric layer, wherein the semiconductor stack including semiconductor layers stacked up and separated from each other; a first metal gate structure and a second metal gate structure formed over a channel region of the semiconductor stack, wherein the first metal gate structure and the second metal gate structure wrap each of the semiconductor layers of the semiconductor stack; and a first epitaxial feature disposed between the first metal gate structure and the second metal gate structure over a first source/drain region of the semiconductor stack, wherein the first epitaxial feature extends through the dielectric layer and contacts the conductive feature.
    Type: Grant
    Filed: July 22, 2022
    Date of Patent: February 27, 2024
    Inventors: Chih-Chao Chou, Kuo-Cheng Chiang, Shi Ning Ju, Wen-Ting Lan, Chih-Hao Wang
  • Patent number: 11916313
    Abstract: An appressed antenna includes an antenna housing and a metal shell. The antenna housing comprising a housing and a planar antenna, where the planar antenna is bent with one part folded onto the inner surface of the housing and other part pressed onto the outer surface of the housing. The antenna housing is sleeve fitted to the metal shell with a gap between for the planar antenna to radiate. In this all-metal environment, the position of the antenna is close to the gap opening will increase radiation efficiency. By having at least a branch at the tail end of the appressed antenna, the appressed antenna can have a good return loss and antenna gain.
    Type: Grant
    Filed: March 29, 2022
    Date of Patent: February 27, 2024
    Assignee: QuantumZ Inc.
    Inventors: Kun-Yen Tu, Meng-Hua Tsai, Wei-Ting Lee, Sin-Siang Wang
  • Patent number: 11916131
    Abstract: According to an exemplary embodiment, a method of forming a vertical device is provided. The method includes: providing a protrusion over a substrate; forming an etch stop layer over the protrusion; laterally etching a sidewall of the etch stop layer; forming an insulating layer over the etch stop layer; forming a film layer over the insulating layer and the etch stop layer; performing chemical mechanical polishing on the film layer and exposing the etch stop layer; etching a portion of the etch stop layer to expose a top surface of the protrusion; forming an oxide layer over the protrusion and the film layer; and performing chemical mechanical polishing on the oxide layer and exposing the film layer.
    Type: Grant
    Filed: November 4, 2020
    Date of Patent: February 27, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: De-Fang Chen, Teng-Chun Tsai, Cheng-Tung Lin, Li-Ting Wang, Chun-Hung Lee, Ming-Ching Chang, Huan-Just Lin
  • Patent number: 11912768
    Abstract: The present invention relates to the field of medical biology, and discloses a single domain antibody and derivative proteins thereof against CTLA4. In particular, the present invention discloses a CTLA4 binding protein and the use thereof, especially the use for treating and/or preventing CTLA4 relevant diseases such as tumor.
    Type: Grant
    Filed: July 7, 2021
    Date of Patent: February 27, 2024
    Assignees: SUZHOU ALPHAMAB CO., LTD., XITIAN ZHANG, XIN ZHANG
    Inventors: Ting Xu, Xiaoxiao Wang, Jie Li, Haiyan Wu, Li Gao, Qian Chu, Yu Bai
  • Publication number: 20240063990
    Abstract: A first communication apparatus obtains first configuration information, and performs carrier aggregation communication on at least two receive carriers based on the first configuration information. The first configuration information may indicate the first communication apparatus to perform carrier aggregation communication on the at least two receive carriers, the at least two receive carriers include a first receive carrier and a second receive carrier, the first receive carrier corresponds to a first communication standard, the second receive carrier corresponds to a second communication standard, and the first communication standard is different from the second communication standard.
    Type: Application
    Filed: October 27, 2023
    Publication date: February 22, 2024
    Inventors: Ting Wang, Yongxia Lyu, Jun Wang, Jianglei Ma, Liqing Zhang
  • Patent number: 11910330
    Abstract: A power control method includes determining priorities of uplink transmission and sidelink transmission, where the uplink transmission is used to transmit uplink information by a first terminal device to a network device, and the sidelink transmission is used to transmit sidelink information by the first terminal device to a second terminal device; determining target information that is in the sidelink information and that overlaps with the uplink information in time domain in a scheduling time unit; determining transmit powers of the uplink information and the target information based on the target information and the priorities of the uplink transmission and the sidelink transmission; and sending the uplink information based on the transmit power of the uplink information, or sending the target information based on the transmit power of the target information.
    Type: Grant
    Filed: June 28, 2021
    Date of Patent: February 20, 2024
    Assignee: Huawei Technologies, Co., Ltd.
    Inventors: Ting Wang, Hao Tang, Xinxian Li, Zhenfei Tang
  • Patent number: 11905672
    Abstract: A sea surface oil recovery device is provided, which comprises a storage cabin, an oil-water separation system and an oil-water collection system arranged on the storage cabin. The storage cabin is provided with an oil storage cabin, a water storage cabin, a separation cabin and a gas storage cabin which are separated from each other, and the storage cabin is provided with a water pipe for connecting the water storage cabin with the outside of the storage cabin. The oil-water separation system comprises a molecular semipermeable membrane for separating oil and water and a water suction pipe, wherein the molecular semipermeable membrane is arranged between the separation cabin and the water storage tank and connects the separation cabin with the water storage tank; the water suction pipe is arranged between the oil storage cabin and the separation cabin and connects the oil storage tank with each other.
    Type: Grant
    Filed: February 23, 2023
    Date of Patent: February 20, 2024
    Assignee: CHANGZHOU UNIVERSITY
    Inventors: Hong Ji, Yinhan Zhao, Ke Yang, Zhixiang Xing, Juncheng Jiang, Jie Guo, Ting Wang, Yuchen Liu, Renjie Lu
  • Patent number: 11909559
    Abstract: Example quasi co-location information determining methods and apparatus are described. One example method includes determining a quantity X of pieces of quasi co-location QCL information, where X is a positive integer. When it is determined that the quantity X of pieces of QCL information is two, and that DCI corresponding to a current data channel does not indicate QCL information of an antenna port of the data channel, or that an interval between the current data channel and the DCI corresponding to the data channel is less than a threshold, two pieces of default QCL information of the antenna port of the data channel are determined.
    Type: Grant
    Filed: August 11, 2020
    Date of Patent: February 20, 2024
    Assignee: Huawei Technologies Co., Ltd.
    Inventors: Ting Wang, Haibao Ren, Shengyue Dou, Yuanjie Li
  • Publication number: 20240056086
    Abstract: A frequency locked loop circuit, comprising an operational circuit, a first impedance circuit, a second impedance circuit, a switching circuit and a frequency generation circuit. The operational circuit is configured to output an operational signal according to a voltage difference between a positive terminal and a negative terminal. The switching circuit is configured to periodically conduct the negative terminal to one of the first impedance node and the second impedance node, and periodically conduct the positive terminal to the other one of the first impedance node and the second impedance node. The frequency generation circuit is configured to periodically sample the operational signal to generate a sample signal to generate a clock signal. An operational frequency of the operational signal is an integer multiple of a sampling frequency of the frequency generation circuit.
    Type: Application
    Filed: October 29, 2023
    Publication date: February 15, 2024
    Inventors: Chin-Tung CHAN, Yan-Ting WANG, Ren-Hong LUO, Chih-Wen CHEN, Hao-Che HSU, Li-Wei LIN
  • Publication number: 20240056241
    Abstract: This application provides a communication method. The method includes: A first communication apparatus obtains first configuration information, and performs carrier aggregation communication on at least two transmit carriers based on the first configuration information. The first configuration information indicates the first communication apparatus to perform carrier aggregation communication on the at least two transmit carriers, the at least two transmit carriers include a first transmit carrier and a second transmit carrier, the first transmit carrier corresponds to a first communication standard, the second transmit carrier corresponds to a second communication standard, and the first communication standard is different from the second communication standard.
    Type: Application
    Filed: October 27, 2023
    Publication date: February 15, 2024
    Inventors: Ting Wang, Yongxia Lyu, Jun Wang, Jianglei Ma, Liqing Zhang
  • Publication number: 20240055479
    Abstract: A method for manufacturing a semiconductor structure is provided. The method includes forming a fin structure protruding from a substrate, wherein the fin structure includes first semiconductor material layers and second semiconductor material layers alternately stacked. The method includes forming a dummy gate structure across the fin structure. The method includes forming a gate spacer on the sidewall of the dummy gate structure. The method includes removing the dummy gate structure to expose the fin structure. The method includes partially removing the second semiconductor material layers to form concave portions on sidewalls of the second semiconductor material layers. The method includes forming dielectric spacers in the concave portions. The method includes removing the first semiconductor material layers to form gaps. The method includes forming a gate structure in the gaps to wrap around the second semiconductor material layers and the dielectric spacers.
    Type: Application
    Filed: August 12, 2022
    Publication date: February 15, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kuan-Ting PAN, Kuo-Cheng CHIANG, Shi-Ning JU, Yi-Ruei JHAN, Wei-Ting WANG, Chih-Hao WANG
  • Publication number: 20240055842
    Abstract: Systems and methods for performing the dynamic anomaly localization of utility pole aerial/suspended/supported wires/cables by distributed fiber optic sensing. In sharp contrast to the prior art, our inventive systems and methods according to aspects of the present disclosure advantageously identify a “location region” on a utility pole supporting an affected wire/cable, thereby permitting the identification and reporting of service personnel that are uniquely responsible for responding to such anomalous condition(s).
    Type: Application
    Filed: October 24, 2023
    Publication date: February 15, 2024
    Applicant: NEC Laboratories America, Inc.
    Inventors: Yangmin Ding, Yuanda Xu, Sarper Ozharar, Yue Tian, Ting Wang
  • Patent number: 11898257
    Abstract: An electrode for electrochemical applications is coated with a layer of a-C, wherein the layer of a-C comprises at least 10 each of first and second sub-layers, being—(i) first sub-layers having high conductivity with a sp2 content of 60-95%, alternating with—(ii) second sub-layers having high corrosion resistance with a sp2 content of 50-90%, wherein the sp2 content of the first sub-layers is at least 3% greater than the sp2 content of the second sub-layers. A method of making such electrodes comprises: —a) depositing a first sub-layer comprising a-C, —b) depositing a second sub-layer comprising a-C wherein the sp2 content of the first sub-layer is at least 3% greater than the sp2 content of the second sub-layer, and—c) repeating the steps above to deposit at least 10 first sub-layers alternating with 10 second sub-layers, so as to produce the electrodes.
    Type: Grant
    Filed: January 20, 2023
    Date of Patent: February 13, 2024
    Assignee: Nanofilm Technologies International Limited
    Inventors: Zhi Tang, Ting Wang, Xu Shi
  • Publication number: 20240049037
    Abstract: Current signaling structures in Long-Term Evolution and New Radio are not designed to accommodate flexible allocation of RF chains and/or antennas among radio access technologies (RATs) and/or between different transmission modes that support multiple transmissions/receptions/component carriers such as carrier aggregation, multiple-input multiple-output and/or multiple-transmit-receive point transmission/reception. Embodiments are disclosed in which an apparatus reports radio frequency (RF) capability information that supports such a flexible allocation of RF chains and/or antennas. In some embodiments, the RF capability information includes RF chain information indicating a number of RF chains operable in a first frequency range, and antenna information indicating, for each of a plurality of second frequency ranges within the first frequency range, a number of physical antennas operable within the corresponding second frequency range.
    Type: Application
    Filed: October 16, 2023
    Publication date: February 8, 2024
    Inventors: YONGXIA LYU, JIANGLEI MA, LIQING ZHANG, TING WANG
  • Publication number: 20240049224
    Abstract: A first access node determines scheduling information, where the scheduling information indicates resource information to be used by a second access node to receive data or send data; and the first access node sends the scheduling information to the second access node.
    Type: Application
    Filed: October 23, 2023
    Publication date: February 8, 2024
    Applicant: HUAWEI TECHNOLOGIES CO., LTD.
    Inventors: Jun WANG, Yongxia LYU, Ting WANG, Liqing ZHANG, Jianglei MA
  • Patent number: D1016028
    Type: Grant
    Filed: March 6, 2020
    Date of Patent: February 27, 2024
    Assignee: HUAWEI TECHNOLOGIES CO., LTD.
    Inventors: Ting Xu, Lijun Qi, Jiaxi Wang, Jue Yuan, Haosen Xu