Patents by Inventor Ting Wang

Ting Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12095153
    Abstract: An antenna structure includes a first radiation element, a second radiation element, a third radiation element, a fourth radiation element, a fifth radiation element, and a nonconductive support element. The first radiation element has a feeding point. The second radiation element is coupled to the first radiation element. The third radiation element is coupled to a ground voltage and adjacent to the first radiation element. The fourth radiation element is coupled to the first radiation element. The fifth radiation element is coupled to the ground voltage and adjacent to the second radiation element. The first radiation element, the second radiation element, the third radiation element, and the fourth radiation element are at least partially surrounded by the fifth radiation element. The first radiation element, the second radiation element, the third radiation element, the fourth radiation element, and the fifth radiation element are disposed on the nonconductive support element.
    Type: Grant
    Filed: September 26, 2022
    Date of Patent: September 17, 2024
    Assignee: QUANTA COMPUTER INC.
    Inventors: Chun-I Chen, Chun-Yuan Wang, Chung-Ting Hung
  • Patent number: 12094948
    Abstract: A semiconductor device includes a plurality of active region structures that each protrude upwards in a vertical direction. The active region structures each extend in a first horizontal direction. The active region structures are separated from one another in a second horizontal direction different from the first horizontal direction. A gate structure is disposed over the active region structures. The gate structure extends in the second horizontal direction. The gate structure partially wraps around each of the active region structures. A conductive capping layer is disposed over the gate structure. A gate via is disposed over the conductive capping layer. A dimension of the conductive capping layer measured in the second horizontal direction is substantially greater than a maximum dimension of the gate via measured in the second horizontal direction.
    Type: Grant
    Filed: September 3, 2021
    Date of Patent: September 17, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chia-Wei Chen, Wei Cheng Hsu, Hui-Chi Chen, Jian-Hao Chen, Kuo-Feng Yu, Shih-Hang Chiu, Wei-Cheng Wang, Kuan-Ting Liu, Yen-Ju Chen, Chun-Chih Cheng, Wei-Chen Hsiao
  • Publication number: 20240301777
    Abstract: This disclosure generally relates to power generation methods and systems based on gas turbine engines, and particularly to mobile and adaptive power generation systems and methods based on gas turbine engine for supplying mechanical and/or electrical power for fracturing operations at an oil wellsite. Various systems, platforms, components, devices, and methods are provided for flexibly and adaptively configure one of more gas turbines, hydraulic pumps, and electric generators to support both fracturing and electric demands at a well site. The disclosed implementations enable and facilitate a mobile, adaptive, and reconfigurable power system to provide both mechanical and electric power for hydraulic fracturing operation, which is convenient to set up for operation and for transport.
    Type: Application
    Filed: May 9, 2024
    Publication date: September 12, 2024
    Applicant: YANTAI JEREH PETROLEUM EQUIPMENT & TECHNOLOGIES CO., LTD.
    Inventors: Peng ZHANG, Liang LV, Rikui ZHANG, Zhuqing MAO, Jianwei WANG, Chunqiang LAN, Yipeng WU, Xincheng LI, Ning FENG, Ting ZHANG, Jianglei ZOU, Haibo ZHANG, Ligong WU, Cong ZHANG, Wanchun ZHA, Qiong WU, Jifeng ZHONG
  • Publication number: 20240304705
    Abstract: A semiconductor device includes a gate structure on a substrate, a first spacer on a sidewall of the gate structure, a second spacer on a sidewall of the first spacer, a third spacer on a sidewall of the second spacer, and first and second stacks of an epitaxial layer and a cap layer respectively disposed at first and second sides of the gate structure. Preferably, a part of the second spacer comprises an I-shape, the cap layer includes a planar top surface and an inclined sidewall, the cap layer contacts the second spacer and the third spacer directly, and the cap layer includes a vertical sidewall connected to the inclined sidewall.
    Type: Application
    Filed: May 16, 2024
    Publication date: September 12, 2024
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Wei-Chih Chuang, Chia-Jong Liu, Kuang-Hsiu Chen, Chung-Ting Huang, Chi-Hsuan Tang, Kai-Hsiang Wang, Bing-Yang Jiang, Yu-Lin Cheng, Chun-Jen Chen, Yu-Shu Lin, Jhong-Yi Huang, Chao-Nan Chen, Guan-Ying Wu
  • Publication number: 20240306044
    Abstract: A first access network device (AND) sends a first message to a second AND. The first message is usable to request to hand over a group of terminal devices under the first AND to the second AND. The group of terminal devices includes one or more terminal devices. In response to the first AND receiving a first response message from the second AND for the first message, the first AND sends a second message to the terminal devices. The first response message is usable to indicate that the terminal devices are allowed to be handed over to the second AND, and the second message is usable to indicate the terminal devices to be handed over to the second AND. After the terminal devices are handed over to the second AND, the first AND switches off one or more cells.
    Type: Application
    Filed: May 10, 2024
    Publication date: September 12, 2024
    Inventors: Dongdong WEI, Yongxia LYU, Jianglei MA, Ting WANG
  • Publication number: 20240302225
    Abstract: Disclosed are vehicle-infrastructure interaction systems and methods employing a distributed fiber optic sensing (DFOS) system operating with pre-deployed fiber-optic telecommunication cables buried alongside/proximate to highways/roadways which provide 24/7 continuous information stream of vehicle traffic at multiple sites; only require a single optical sensor cable that senses/monitors multiple locations of interest and multiple lanes of traffic; the single optical sensor cable measures multiple related information (multi-parameters) about a vehicle, including driving speed, wheelbase, number of axles, tire pressure, and others, that can be used to derive secondary information such as weight-in-motion; and overall information about a fleet of vehicles, such as traffic congestion or traffic-cargo volume. Different from merely traffic counts, our approach can provide the count grouped by vehicle-types and cargo weights.
    Type: Application
    Filed: March 7, 2024
    Publication date: September 12, 2024
    Applicant: NEC Laboratories America, Inc.
    Inventors: Philip JI, Ting WANG, Yaowen LI, Junqiang HU, Shuji MURAKAMI, Jian FANG
  • Patent number: 12087636
    Abstract: The present disclosure provides a method of forming a semiconductor structure with a metal gate. The semiconductor structure is formed by first fabricating fins over a semiconductor substrate, followed by a formation of a source and a drain recess. A source and a drain region may then be deposited into the source and the drain recess. The gate structure may be deposited into the region between the fins. The gate structure includes dielectric and metallic layers. In the regions between the fins, the gate structure is isolated from the source and the drain region by an insulating layer.
    Type: Grant
    Filed: June 1, 2022
    Date of Patent: September 10, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kuo-Cheng Ching, Zhi-Chang Lin, Shi Ning Ju, Chih-Hao Wang, Kuan-Ting Pan
  • Patent number: 12087575
    Abstract: Generally, the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In a method embodiment, a dielectric layer is formed on a semiconductor substrate. The semiconductor substrate has a source/drain region. An opening is formed through the dielectric layer to the source/drain region. A silicide region is formed on the source/drain region and a barrier layer is formed in the opening along sidewalls of the dielectric layer by a same Plasma-Enhance Chemical Vapor Deposition (PECVD) process.
    Type: Grant
    Filed: January 18, 2022
    Date of Patent: September 10, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Cheng-Wei Chang, Min-Hsiu Hung, Hung-Yi Huang, Chun Chieh Wang, Yu-Ting Lin
  • Patent number: 12087887
    Abstract: The wavelength conversion material includes a general formula (I) MmAaBbCcDdEe:ESxREy and satisfies a condition (II) that a proportion of D for the wavelength conversion material greater than or equal to 50%. M is selected from a group consisting of Ca, Sr and Ba. A is selected from a group consisting of elements Mg, Mn, Zn and Cd. B is selected from a group consisting of elements B, Al, Ga and In. C is selected from a group consisting of Si, Ge, Ti and Hf. D is selected from a group consisting of elements 0, S and Se. E is selected from a group consisting of elements N and P. ES is selected from a group consisting of divalent Eu, Sm and Yb. RE is selected from a group consisting of trivalent Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er and Tm.
    Type: Grant
    Filed: September 26, 2020
    Date of Patent: September 10, 2024
    Assignee: Lextar Electronics Corporation
    Inventors: Yi-Ting Tsai, Hung-Chia Wang, Chia-Chun Hsieh, Hung-Chun Tong, Yu-Chun Lee, Tzong-Liang Tsai
  • Patent number: 12087768
    Abstract: A semiconductor device structure is provided. The semiconductor device structure includes first nanostructures and second nanostructures stacked in a vertical direction over a substrate, and a first dummy fin structure between the first nanostructures and the second nanostructures. The semiconductor device structure includes a first gate structure formed over the first nanostructures, wherein the first gate structure includes a gate dielectric layer, and the gate dielectric layer is in direct contact with a sidewall surface of the first dummy fin structure.
    Type: Grant
    Filed: April 7, 2023
    Date of Patent: September 10, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Kuo-Cheng Chiang, Shi-Ning Ju, Chih-Hao Wang, Kuan-Ting Pan, Zhi-Chang Lin
  • Patent number: 12085284
    Abstract: An air guide box includes a box body. The box body includes a first wall and a second wall disposed opposite to each other. The first wall has an air inlet. Air outlets are respectively disposed between corresponding edges of the first and second walls. The second wall is recessed toward the first wall, and a portion of the second wall corresponding to the air inlet is a largest recessed position. From the largest recessed position to the air outlets, the second wall is gradually inclined in a direction away from the first wall, so that an inner surface of the second wall facing the first wall forms guiding slopes respectively form the largest recessed position to the edges of the first and second walls.
    Type: Grant
    Filed: December 24, 2020
    Date of Patent: September 10, 2024
    Assignee: NINGBO FOTILE KITCHEN WARE CO., LTD.
    Inventors: Fan Cai, Fengxu Ye, Gai Lei, Ting Yu, Xiaoqiong Wang
  • Publication number: 20240298491
    Abstract: A display panel includes a substrate and a plurality of pixel components formed on the substrate. Each of the pixel components comprises a plurality of sub-pixels, at least one of the sub-pixels is an anti-peeping sub-pixel. Each anti-peeping sub-pixel comprises a normal display part which including a display organic light-emitting layer and a display color filtering layer, and an anti-peeping part which including an anti-peeping organic light-emitting layer and an anti-peeping color filtering layer. The light emitted by the anti-peeping organic light-emitting layer and the light emitted by the display organic light-emitting layer are same in color, and the anti-peeping color filtering layer and the display color filtering layer are different in color. The display color filtering layer allows the light emitted by the anti-peeping organic light-emitting layer and the light emitted by the display organic light-emitting layer to pass through.
    Type: Application
    Filed: July 28, 2023
    Publication date: September 5, 2024
    Inventors: Ting ZHOU, Hailiang Wang, Jing Li, Qi Mu, Laidi Wu, Tianjun Huang, Haijiang Yuan
  • Publication number: 20240297081
    Abstract: Embodiments of the present disclosure provide a method of forming sidewall spacers by filling a trench between a hybrid fin and a semiconductor fin structure. The sidewall spacer includes two fin sidewall spacer portions connected by a gate sidewall spacer portion. The fin sidewall spacer portion has a substantially uniform profile to provide uniform protection for vertically stacked channel layers and eliminate any gaps and leaks between inner spacers and sidewall spacers.
    Type: Application
    Filed: April 26, 2024
    Publication date: September 5, 2024
    Inventors: Kuan-Ting Pan, Yi-Ruei JHAN, Chih-Hao WANG, Shi Ning JU, Kuo-Cheng CHIANG, Kuan-Lun CHENG
  • Publication number: 20240298256
    Abstract: A method includes a terminal device that obtains first power saving information from a first network device, where the first power saving information is related to power saving of the first network device. The terminal device communicates with the first network device based on the first power saving information.
    Type: Application
    Filed: April 25, 2024
    Publication date: September 5, 2024
    Applicant: HUAWEI TECHNOLOGIES CO., LTD.
    Inventors: Dongdong Wei, Yongxia Lyu, Ting Wang
  • Patent number: 12076125
    Abstract: The present disclosure relates to a device, method and system for calculating, estimating, or monitoring the blood pressure of a subject. At least one processor, when executing instructions, may perform one or more of the following operations. A first signal representing heart activity of the subject may be received. A second signal representing time-varying information on at least one pulse wave of the subject may be received. A first feature in the first signal may be identified. A second feature in the second signal may be identified. A pulse transit time based on a difference between the first feature and the second feature may be computed. The blood pressure of the subject may be calculated according to a first model based on the computed pulse transit time and a first set of calibration values, the first set of calibration values relating to the subject.
    Type: Grant
    Filed: September 29, 2021
    Date of Patent: September 3, 2024
    Assignee: VITA-COURSE TECHNOLOGIES CO., LTD.
    Inventors: Ting Ma, Jiao Yu, Jiwei Zhao, Zhiyong Wang
  • Patent number: 12077706
    Abstract: A hybrid silicone composite for high temperature insulation applications is disclosed. The hybrid silicone composite is formed of a mixture of liquid high consistency silicone rubber and solid high consistency silicone rubber and a thermally decomposable inorganic filler which are compounded together. The compounded material is then injection molded, over molded, compression molded, cast, laminated, extruded, calendered, adhered or dispensed. When the silicone composite is exposed to a high temperature, it forms an inorganic composite and maintains its insulating properties and dimensional stability.
    Type: Grant
    Filed: January 28, 2021
    Date of Patent: September 3, 2024
    Assignees: TE CONNECTIVITY SERVICES GMBH, TE CONNECTIVITY GERMANY GMBH
    Inventors: Dejie Tao, Yiliang Wu, Lananh Pham, Lei Wang, Ting Gao, Andre Martin Dressel, Frank Schabert
  • Patent number: 12080776
    Abstract: A device includes a substrate and a fin isolation structure between a first gate structure and a second gate structure. The first gate structure wraps around a first vertical stack of nanostructure channels overlying a first fin. The second gate structure wraps around a second vertical stack of nanostructure channels overlying a second fin. The fin isolation structure extends from an upper surface of the first gate structure to an upper surface of the substrate. A trench isolation structure is between the first fin and the fin isolation structure, and has different etch selectivity than the fin isolation structure.
    Type: Grant
    Filed: August 31, 2021
    Date of Patent: September 3, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yi-Ruei Jhan, Kuan-Ting Pan, Kuo-Cheng Chiang, Chih-Hao Wang
  • Patent number: 12077417
    Abstract: An embedded bionic winch for sampling and exploration of a polar sub-glacial lake, including an actuating chamber, a power chamber, a transition chamber, a sensor chamber, a cable arranging chamber and a slip ring chamber, where the actuating chamber, the power chamber, the transition chamber, the sensor chamber, the cable arranging chamber and the slip ring chamber are arranged in sequence, and are coaxially connected; the power chamber provides a power for the winch, and realizes sealing of motors located therein under water with a certain depth; the transition chamber realizes a power transmission between the power chamber and the cable arranging chamber; the sensor chamber is used for mounting of a tension sensor; the cable arranging chamber realizes retraction and release of a cable through the precise cooperation of a drum and a lead screw, and the slip ring chamber contains a slip ring.
    Type: Grant
    Filed: May 26, 2021
    Date of Patent: September 3, 2024
    Assignee: JILIN UNIVERSITY
    Inventors: Youhong Sun, Jianhua Wang, Pavel Talalay, Jixin Wang, Tianlong Lei, Zhigang Wang, Xiaopeng Fan, Nan Zhang, Bing Li, Da Gong, Rusheng Wang, Yanji Chen, Ting Wang
  • Patent number: 12078528
    Abstract: Systems, and methods for automatically identifying an underground optical fiber cable length from DFOS systems in real time and pair it with GPS coordinates that advantageously eliminate the need for in-field inspection/work by service personnel to make such real-time distance/location determinations. As such, inefficient, error-prone and labor-intensive prior art methods are rendered obsolete. Operationally, our method disclosure involves driving vehicles including GPS to generate traffic patterns and automatically mapping traffic trajectory signals from a deployed buried fiber optic cable to locate geographic location(s) of the buried fiber optic cable. Traffic patterns are automatically recognized; slack in the fiber optic cable is accounted for; location of traffic lights and other traffic control devices/structures may be determined; and turns in the fiber optic cable may likewise be determined.
    Type: Grant
    Filed: July 20, 2022
    Date of Patent: September 3, 2024
    Assignee: NEC Corporation
    Inventors: Ming-Fang Huang, Shaobo Han, Yuheng Chen, Milad Salemi, Ting Wang
  • Publication number: 20240288334
    Abstract: The present invention discloses a convenient and small near-ground atmospheric-boundary-layer wind tunnel and its application in the population exposure risk assessment. This near-ground atmospheric-boundary-layer wind tunnel comprises a wind tunnel body and a reflux stabilizer; the wind tunnel body comprises a natural wind injection device and a simulation test device, with the natural wind injection device, the simulation test device and the reflux stabilizer connected in sequence; the natural wind injection device comprises a pipe fan, a swirl mixing pipe, a diffusion homogenizer, and a cyclone distribution pipe connected in sequence; the diffusion homogenizer is provided inside at the center with an inner member for preventing flow separation; and a static mixing spiral rod is welded on the inner wall surface of the swirl mixing pipe.
    Type: Application
    Filed: May 19, 2020
    Publication date: August 29, 2024
    Inventors: Taicheng An, Ting Zhang, Guiying Li, Zuming Wang