Abstract: Various embodiments include protection layers for a transistor and methods of forming the same. In an embodiment, a method includes: exposing a semiconductor nanostructure, a dummy nanostructure, and an isolation region by removing a dummy gate; increasing a deposition selectivity between a top surface of the semiconductor nanostructure and a top surface of the isolation region relative a selective deposition process; depositing a protection layer on the top surface of the isolation region by performing the selective deposition process; removing the dummy nanostructure by selectively etching a dummy material of the dummy nanostructure at a faster rate than a protection material of the protection layer; and forming a gate structure around the semiconductor nanostructure.

Abstract: A semiconductor device includes a single diffusion break (SDB) structure dividing a fin-shaped structure into a first portion and a second portion, an isolation structure on the SDB structure, a first spacer adjacent to the isolation structure, a metal gate adjacent to the isolation structure, a shallow trench isolation (STI around the fin-shaped structure, and a second isolation structure on the STI. Preferably, a top surface of the first spacer is lower than a top surface of the isolation structure and a bottom surface of the first spacer is lower than a bottom surface of the metal gate.

Abstract: A method for forming a semiconductor device structure is provided. The method includes providing a substrate and a nanostructure stack. The method includes forming an isolation layer over the base and surrounding the fin. The method includes forming a first protection layer over the nanostructure stack and the isolation layer. The method includes forming a second protection layer over the first protection layer. The method includes forming a mask layer over the second protection layer. The top portion of the second protection layer protrudes from the mask layer. The method includes thinning the top portion of the second protection layer. The method includes removing the mask layer. The method includes removing the first protection layer and the second protection layer over the nanostructure stack. The method includes forming a gate stack wrapped around the nanostructure stack.

Abstract: Provided is an isolated nucleic acid molecule comprising a NKp30 transmembrane domain, and a chimeric antigen receptor comprising the same. The isolated nucleic acid molecule comprising a NKp30 transmembrane domain comprises nucleic acid sequences encoding (a) an extracellular antigen binding domain, comprising a heavy chain variable region; (b) a hinge domain; (c) a NKp30 transmembrane domain; and (d) a NKp30 cytoplasmic domain. By introducing nucleic acid sequences of the NKp30 transmembrane domain and the NKp30 cytoplasmic domain in combination with the extracellular antigen binding domain into a T cell, the resulting CAR-T cell is a multi-chain CAR-T cell with a NKp30 receptor complex. Consequently, the resulting CAR-T cell forms stable immune synapses with cancer cells and exhibits excellent cytotoxicity against cancer cells.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a first low dielectric constant (low-k) layer, a first metal layer, a metal cap layer, a dielectric on dielectric (DoD) layer, an etch stop layer (ESL), a second low-k layer, a metal via and a second metal layer. The dielectric constant of the first low-k layer is less than 4. The first metal layer is embodied in the first low-k layer. The first low-k layer exposes the first metal layer. The metal cap layer is disposed on the first metal layer. The DoD layer is disposed on the first low-k layer. The etch stop layer is disposed on the metal cap layer and the DoD layer. The second low-k layer is disposed above the etch stop layer. The metal via is embodied in the second low-k layer and connected to the first metal layer.

Abstract: A multi-write read-only memory array includes word common-source lines, bit lines, and sub-memory arrays. The word common-source lines include a first word common-source line and a second word common-source line. The bit lines include a first bit line and a second bit line. Each sub-memory array includes a first memory cell coupled to the first word common-source line and the first bit line, a second memory cell coupled to the first word common-source line and the second bit line, a third memory cell coupled to the second word common-source line and the second bit line, and a fourth memory cell coupled to the second word common-source line and the first bit line.

Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: Disclosed in the present invention is a control method for water supply during loosening and conditioning based on a neural network model and a dual parameter correction. The method comprises: establishing a neural network-based model for predicting the amount of water supplied during loosening and conditioning; predicting and distributing the total water supplied; and correcting the model based on material balance calculation and deviation. In the present application, when there is a large deviation in outlet moisture, the dual correction control system combining the material balance calculation and the moisture deviation is used for correction to improve the stability and precise control of the outlet moisture during the loosening and conditioning process.

Abstract: A circuit includes a voltage divider circuit configured to generate a feedback voltage according to an output voltage, an operational amplifier configured to output a driving signal according to the feedback voltage and a reference voltage and a pass gate circuit including multiple current paths. The current paths are controlled by the driving signal and connected in parallel between the voltage divider circuit and a power reference node.

Abstract: A method for performing access management of a memory device in a predetermined communications architecture with aid of automatic parameter setting and associated apparatus are provided. The method includes: utilizing the memory controller to set at least one write booster static parameter of a write booster function of the memory device; utilizing the memory controller to perform device initialization corresponding to at least one initialization phase of the memory device; and after completing the device initialization corresponding to the at least one initialization phase, performing at least one adaptive flag-setting operation, for setting at least one write booster flag among a plurality of write booster flags of the write booster function, wherein the at least one write booster flag includes a first write booster flag acting as a write booster switch. The adaptive flag-setting operation includes setting the first write booster flag to enable the write booster function by default.

Abstract: A semiconductor structure includes a semiconductor substrate; fin active regions protruded above the semiconductor substrate; and a gate stack disposed on the fin active regions; wherein the gate stack includes a high-k dielectric material layer, and various metal layers disposed on the high-k dielectric material layer. The gate stack has an uneven profile in a sectional view with a first dimension D1 at a top surface, a second dimension D2 at a bottom surface, and a third dimension D3 at a location between the top surface and the bottom surface, and wherein each of D1 and D2 is greater than D3.

Abstract: For artificial reality (XR) applications that need a guardian, aspects of the present disclosure can automatically determine where boundaries should be set in the real-world environment. Using a machine learning model, the automatic boundary system can detect the floor plane, then generate a height map of the real-world environment with the floor at zero. The height map can include positive heights (e.g., objects on the floor) and negative heights (e.g., downward leading stairs). The automatic boundary system can then generate a boundary for the area based on the detected heights by: applying thresholds to disregard objects at certain heights, applying thresholds to disregard open areas at certain widths, excluding oddly shaped areas that would constantly trigger the boundary if the user were nearby, etc. The user can further manually adjust the generated boundary in both directions (e.g., bringing it closer or further from the user).

Abstract: An immunity detecting kit includes an immune-stimulant agent and a Chinese herb combination or a nutrient combination. The immune-stimulant agent includes a phorbol 12-myristate 13-acetate (PMA) and a lipopolysaccharide (LPS). The Chinese herb combination includes at least one Chinese herb extract. The nutrient combination includes at least one nutritional product. A using method of immunity detecting kit is also provided.

Abstract: A projection lens includes a first and a second optical lens assembly. The first optical lens assembly is configured to transmit an image beam to the second optical lens assembly, which projects out the image beam from the projection lens. The second optical lens assembly includes a first and a second reflective element, and an optical member disposed between the first and the second reflective element and including a translucent region and a reflective region. The first reflective element is configured to reflect the image beam from the first optical lens assembly and transmit to the translucent region, which allows the image beam from the first reflective element to pass through and transmit to the second reflective element. The second reflective element is configured to reflect the image beam from the translucent region and transmit to the reflective region, which reflects the image beam from the second reflective element.

Abstract: An optoelectronic device includes a first substrate, a second substrate, a photonic integrated circuit, and a laser diode. The second substrate is over the first substrate. The photonic integrated circuit is disposed on the first substrate and includes a first waveguide channel, a second waveguide channel, and a patterned structure. The first waveguide channel and the second waveguide channel are coupled to the patterned structure. The laser diode is disposed on the second substrate and configured to emit a light beam toward the patterned structure.

Abstract: An LED driver, an LED lighting system and an operating method thereof are provided. The LED driver is for driving an LED light source and includes a strobe circuit and a DC-DC converter. The strobe circuit generates a low-frequency modulation signal. The DC-DC converter is coupled to the strobe circuit and is configured to provide an adjustable operating current to the LED light source according to a DC signal and the low-frequency modulation signal. The operating current includes a DC current signal and a low-frequency AC current signal corresponding to the DC signal and the low-frequency modulation signal respectively. A frequency of the low-frequency AC current signal is between 25 Hz and 100 Hz, and a current ripple factor, equaling a difference of a maximum value and a minimum value of the operating current divided by a sum of the maximum value and the minimum value, is less than 8%.

Abstract: A packaging film and a preparation method thereof, and a filter chip packaging method are provided. The raw materials of the packaging film include: 20-24 parts by mass of silicon dioxide, 24-26 parts by mass of aliphatic polyurethane acrylate, 12-15 parts by mass of phenoxy resin, 5-13 parts by mass of flexible liquid epoxy resin, 10 parts by mass of bisphenol F epoxy resin, 17-19 parts by mass of curing agent, 2-5 parts by mass of photoinitiator, and 0.4-0.8 parts by mass of accelerant, where the curing agent is compounded by bisphenol F-based benzoxazine curing agent and dicyandiamide curing agent according to the mass ratio of 10:(7-9). The packaging film has excellent flexibility and adhesion, a low moisture absorption rate, and high heat resistance and is especially suitable for the packaging of filter chips.

Abstract: An optical sensing apparatus including: a substrate including a first material; an absorption region including a second material different from the first material; an amplification region formed in the substrate and configured to collect at least a portion of the photo-carriers from the absorption region and to amplify the portion of the photo-carriers; an interface-dopant region formed in the substrate between the absorption region and the amplification region; a buffer layer formed between the absorption region and the interface-dopant region; one or more field-control regions formed between the absorption region and the interface-dopant region and at least partially surrounding the buffer layer; and a buried-dopant region formed in the substrate and separated from the absorption region, where the buried-dopant region is configured to collect at least a portion of the amplified portion of the photo-carriers from the amplification region.

Abstract: The anti-twist structure includes a base, a lens housing, an elastic sheet and a yoke member. The lens housing has a margin wall with a first protrusion, a second protrusion and a contact portion. The contact portion is extended outwardly the first protrusion, and the second protrusion is protruded from the contact portion. The first protrusion and the second protrusion are protruded along an axial direction substantially perpendicular to the margin wall. The elastic sheet is disposed on the contact portion. When the lens housing deflects from the horizontal reference line to a maximum value of the deflectable angle, the first protrusion abuts against an upper wall of the yoke member, the second protrusion abuts against the elastic sheet, and the contact portion abuts against the elastic sheet or the upper wall at the same time, whereby the lens housing and the yoke member interfere with each other.