Abstract: A projection device including an imaging module, a freeform-surface reflective mirror, and a projection lens assembly is provided. The imaging module is configured to provide imaging beams and includes a display panel and a light-source module. The imaging beams are transmitted toward the projection lens assembly by the freeform-surface reflective mirror. The projection lens assembly includes a first optical axis and a second optical axis. The first optical axis passes through the projection lens assembly. The imaging beams emitted by the projection device form an imaging-beam region, in which the first optical axis does not pass through a geometric center of the imaging-beam region, and the second optical axis passes through a geometric center region of the display panel. The geometric center region is a region having a distance less than or equal to 40% of a minimum width of the display panel from a geometric center of the display panel.

Abstract: A battery cell includes electrode assemblies arranged in a first direction, where an end part of each electrode assembly along a second direction perpendicular to the first direction is provided with a tab; and a connection member configured to connect tabs of the electrode assemblies and an electrode terminal of the battery cell. The connection member includes a main body portion and a pin, the main body portion extends along the first direction, and includes a first surface and a second surface perpendicular to the second direction, the main body portion is provided with a plurality of through grooves passing through the first surface and the second surface, and the plurality of through grooves are respectively configured to accommodate the tabs of the plurality of electrode assemblies.

Abstract: An integrated circuit device includes a substrate, a first transition metal dichalcogenide layer over the substrate, a dielectric layer over the first transition metal dichalcogenide layer, a first gate electrode, and a first source contact and a first drain contact. The first transition metal dichalcogenide layer has a surface roughness greater than 0.5 nm and less than 1 nm. The first gate electrode is over the dielectric layer and a first portion of the first transition metal dichalcogenide layer. The first source contact and the first drain contact are respectively connected with a second portion and a third portion of the first transition metal dichalcogenide layer. The first portion of the first transition metal dichalcogenide layer is between the second and third portions of the first transition metal dichalcogenide layer.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including a plurality of semiconductor devices arranged on a substrate and within a device region. A first isolation structure is arranged in the device region and laterally between adjacent semiconductor devices in the plurality of semiconductor devices. An interconnect structure underlies the substrate and includes a topmost conductive interconnect element adjacent to the substrate. A second isolation structure is disposed in the substrate and around the device region. A bottom surface of the second isolation structure is above a lower surface of the topmost conductive interconnect element.

Abstract: An integrated circuit (IC) structure includes a substrate, an interconnect structure, metal lines, a liner, a protecting layer, and a nitride-free passivation layer. The interconnect structure is over the substrate. The metal lines are over the interconnect structure. The liner is conformally formed on the metal lines. The protecting layer is over the liner. The nitride-free passivation layer continuously extends from the liner to the protecting layer and forms an interface with the liner.

Abstract: A production line for producing components to a high standard of cleanliness and sealed and protected in that state includes a loading device, a cleaning device, a detecting device, a pasting device, a heat-sealing device, a packing device, and transfer devices of the production line. The production line automatically processes the components for obtaining components with the high cleanliness. By the processes of protective film pasting, heat-sealing, and packing, the components may be further protected from subsequent pollution. A method for producing components with a high cleanliness applied to the production line is also disclosed.

Abstract: A system that can intelligently help a user judge the resolution requirement of the image content. In an example, the display panel can show in different virtual resolutions or the system can automatically judge whether the image content requires high or low resolution using a similarity judgement. The system can then inform the display panel what virtual resolution should be shown or what the optimal resolution is using the similarity judgment and send the image content to the display panel with that resolution.

Abstract: A package structure includes a plurality of semiconductor dies, an insulating encapsulant, a redistribution layer and a plurality of connecting elements. The insulating encapsulant is encapsulating the plurality of semiconductor dies. The redistribution layer is disposed on the insulating encapsulant in a build-up direction and electrically connected to the plurality of semiconductor dies, wherein the redistribution layer includes a plurality of conductive lines, a plurality of conductive vias and a plurality of dielectric layers alternately stacked, and a lateral dimension of the plurality of conductive vias increases along the build-up direction. The connecting elements are disposed in between the redistribution layer and the semiconductor dies, wherein the connecting elements includes a body portion joined with the semiconductor dies and a via portion joined with the redistribution layer, wherein a lateral dimension of the via portion decreases along the build-up direction.

Abstract: An optical structure is provided. The optical structure includes a substrate and multiple films disposed on the substrate. The multiple films include a first set of multiple films and a second set of multiple films. The first set of multiple films includes a plurality of first material layers and a plurality of second material layers including germanium oxide, germanium nitride or germanium hydroxide which are arranged in an alternating manner. The second set of multiple films includes a plurality of third material layers including germanium oxide, germanium nitride or germanium hydroxide and a plurality of fourth material layers which are arranged in an alternating manner. The thickness of the fourth material layer is greater than that of the first material layer.

Abstract: Provided is a sequential-pulse single-frequency laser power amplification apparatus, which comprises a sequence control unit for modulating and switching a source laser to output a primary laser, and a power amplification unit for amplifying the primary laser to output a secondary laser. Also provided is a sequence controllable multi-laser system comprising a plurality of single-frequency and/or multi-frequency laser power amplification apparatuses. This allows a single ultra-narrow linewidth laser device to meet the experimental requirements of multiple platforms in an atomic experiment, achieving high performance at low costs.

Abstract: A layout pattern of a magnetoresistive random access memory (MRAM) includes a substrate having a first cell region and a second cell region and a diffusion region on the substrate extending through the first cell region and the second cell region. Preferably, the diffusion region includes a first H-shape and a second H-shape according to a top view.

Abstract: A light-curing resin composition, a three-dimensional object containing the same, and a manufacturing method of the three-dimensional object are provided. The light-curing resin composition includes a photoinitiator, an acrylic oligomer, an acrylic monomer, and expandable particles with hollow spherical shell structures. The acrylic monomer is a monofunctional monomer, a difunctional monomer, or a combination thereof.

Abstract: In examples, an electronic device comprises a camera and a display having a transparent area aligned with the camera. The display comprises a first line corresponding to a pixel row or column of the display, the first line extending from a first end of the display to the transparent area. The display comprises a second line corresponding to the pixel row or column and extending from a second end of the display to the transparent area, the first and second lines separated by a gap. The electronic device includes a controller coupled to the display, the controller to drive the first and second lines consecutively.

Abstract: Embodiments of this application provide an explosion-proof valve, a battery pack, and an apparatus. The explosion-proof valve includes a flame arresting member and an air permeable membrane. The flame arresting member is configured to connect to a housing of a battery pack, the air permeable membrane is fastened to the flame arresting member, and the battery pack is capable of exchanging gas with the outside through the flame arresting member and the air permeable membrane in sequence. During use of the explosion-proof valve of this application in the battery pack of this application, when thermal runaway occurs inside the housing of the battery pack, pressure inside the housing is suddenly increased, and as a result, the battery pack releases the pressure through the explosion-proof valve, and high-temperature runaway gas impacts and melts the air permeable membrane, forming a smooth air flow channel.

Abstract: A method includes forming isolation regions extending into a semiconductor substrate, wherein semiconductor strips are located between the isolation regions, and forming a dielectric dummy strip between the isolation regions, recessing the isolation regions. Some portions of the semiconductor strips protrude higher than top surfaces of the recessed isolation regions to form protruding semiconductor fins, and a portion of the dielectric dummy strip protrudes higher than the top surfaces of the recessed isolation regions to form a dielectric dummy fin. The method further includes etching the dielectric dummy fin so that a top width of the dielectric dummy fin is smaller than a bottom width of the dielectric dummy fin. A gate stack is formed on top surfaces and sidewalls of the protruding semiconductor fins and the dielectric dummy fin.

Abstract: An off-chip driver (OCD), including a pull-up driver and a pull-down driver, is provided. The pull-up driver and the pull-down driver are coupled to an output pad. One of the pull-up driver and the pull-down driver includes a main driving circuit, an auxiliary driving circuit, a connection circuit, and a common impedance. The main driving circuit is used to perform an output driving operation on the output pad, and the auxiliary driving circuit is used to selectively perform the output driving operation on the output pad. A first terminal of the common impedance is coupled to a driving terminal of the main driving circuit and a driving terminal of the auxiliary driving circuit through the connection circuit. A second terminal of the common impedance is coupled to the output pad.

Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, a driving assembly and a circuit assembly. The movable assembly is configured to connect an optical element, the movable assembly is movable relative to the fixed assembly, and the optical element has an optical axis. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The circuit assembly includes a plurality of circuits and is affixed to the fixed assembly.

Abstract: A package structure includes a redistribution structure, a first semiconductor die, a first passive component, a second semiconductor die, a first insulating encapsulant, a second insulating encapsulant, a second passive component and a global shielding structure. The redistribution structure includes dielectric layers and conductive layers alternately stacked. The first semiconductor die, the first passive component and the second semiconductor die are disposed on a first surface of the redistribution structure. The first insulating encapsulant is encapsulating the first semiconductor die and the first passive component. The second insulating encapsulant is encapsulating the second semiconductor die, wherein the second insulating encapsulant is separated from the first insulating encapsulant. The second passive component is disposed on a second surface of the redistribution structure.

Abstract: The present disclosure, in some embodiments, relates to a method of forming an integrated chip. The method includes forming a masking layer on a first side of a substrate. A first etching process is performed on the first side of the substrate with the masking layer in place. The masking layer is removed. A second wet etching process is performed on the first side of the substrate after removing the masking layer. The first etching process and the second wet etching process collectively form a plurality of topographical features respectively having a triangular shape in a cross-section.