Abstract: Methods that include directing an incident beam towards a substrate, the substrate having one or more features formed thereon wherein the incident beam has a wavelength from about 10 ?m to about 10 mm, and the incident beam interacts with the substrate to form a modulated beam; varying one or more characteristics of the incident beam while directed towards the substrate; detecting the modulated beam while varying the one or more characteristics of the incident beam to collect a spectrum; and determining at least one spatial metric of the at least one feature based on the collected spectrum.

Abstract: Materials comprising metamaterials exhibiting form-induced birefringence and anisotropic optical properties are provided. The disclosed articles comprise structures with critical dimensions which are on the order of or smaller than the wavelength for the gigahertz and terahertz spectral range. Methods of preparing same using stereolithography are disclosed. In a further aspect, the disclosed methods pertain to spectroscopic ellipsometry methods comprising a biaxial (orthorhombic) layer homogenization approach is to analyze the terahertz ellipsometric data obtained at three different sample azimuth orientations. The disclosed articles and methods demonstrate provide an avenue to fabricate metamaterials for the terahertz spectral range and allows tailoring of the polarizability and anisotropy of the host material. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention.

Abstract: A sensor having a substrate is provided in which structures are disposed on a surface of the substrate. The structures can be, e.g., nanostructures. Polarized light is directed toward the sensor, and birefringence of the structures with respect to the light is measured. Target particles that interact with the structures are detected based on changes in the measured birefringence.

Abstract: Ellipsometers and polarimeters or the like to investigate analyte containing fluids applied to a substrate-stage having a multiplicity of nano-structures that project non-normal to a surface thereof, including dynamics of interaction therewith, to the end of evaluating and presenting at least partial Jones or Mueller Matricies corresponding to a multiplicity of locations over an imaged area.

Abstract: Optical Hall Effect (OHE) method for evaluating such as free charge carrier effective mass, concentration, mobility and free charge carrier type in a sample utilizing a permanent magnet at room temperature.

Abstract: Disclosed are systems and methods that enable determination of uncorrelated thickness of a working electrode and surface region optical constants in settings involving electrochemical processing at a working electrodes in a Piezoelectric Balance system, by simultaneous application of an Ellipsometer system, the working electrode optionally having a multiplicity of nanofibers that are oriented non-normally to a surface of said working electrode. Further disclosed is, simultaneous with said determinations, the monitoring of electrochemical processes at a piezoelectric balance working electrode driven by electrical energy applied between said working electrode and counter electrode.

Abstract: Anisotropic contrast methodology in combination with use of sample investigating polarized electromagnetic radiation to provide Jones or Mueller Matrix imaging data corresponding to areas on samples.

Abstract: A sensor having a substrate is provided in which structures are disposed on a surface of the substrate. The structures can be, e.g., nanostructures. Polarized light is directed toward the sensor, and birefringence of the structures with respect to the light is measured. Target particles that interact with the structures are detected based on changes in the measured birefringence.

Abstract: System Stage, and Optical Hall Effect (OHE) system method for evaluating such as free charge carrier effective mass, concentration, mobility and free charge carrier type in a sample utilizing a permanent magnet at room temperature.

Abstract: A sensor having a substrate is provided in which structures are disposed on a surface of the substrate. The structures can be, e.g., nanostructures. Polarized light is directed toward the sensor, and birefringence of the structures with respect to the light is measured. Target particles that interact with the structures are detected based on changes in the measured birefringence.

Abstract: Methods that include directing an incident beam towards a substrate, the substrate having one or more features formed thereon wherein the incident beam has a wavelength from about 10 ?m to about 10 mm, and the incident beam interacts with the substrate to form a modulated beam; varying one or more characteristics of the incident beam while directed towards the substrate; detecting the modulated beam while varying the one or more characteristics of the incident beam to collect a spectrum; and determining at least one spatial metric of the at least one feature based on the collected spectrum.

Abstract: A dual scanning and FTIR system for application in the Terahertz and broadband blackbody frequency range including sources for providing Thz and broadband blackbody range and electromagnetic radiation, at least one detector of electromagnetic radiation in the THZ and broadband blackbody ranges, and at least one rotating element between the source and detector.

Abstract: A dual scanning and FTIR system for application in the Terahertz and broadband blackbody frequency range including sources for providing Thz and broadband blackbody range and electromagnetic radiation, at least one detector of electromagnetic radiation in the THZ and broadband blackbody ranges, and at least one rotating element between the source and detector.

Abstract: The present invention relates to ellipsometer and polarimeter systems, and more particularly is an ellipsometer or polarimeter or the like system which operates in a frequency range between 300 GHz or lower and extending to higher than at least 1 Tera-hertz (THz), and preferably through the Infra-red (IR) range up to, and higher than 100 THz, including: a source such as a backward wave oscillator; a Smith-Purcell cell; a free electron laser, or an FTIR source and a solid state device; and a detector such as a Golay cell; a bolometer or a solid state detector; and preferably including at least one odd-bounce polarization state image rotating system, and optionally including a polarizer, at least one compensator and/or modulator, in addition to an analyzer.

Abstract: The present invention relates to an ultrasound transducer assembly for an ultrasound flowmeter, comprising a one-part or multi-part housing (2), which is provided to be connected to a line carrying the medium to be measured, wherein the ultrasound transducer transmits ultrasound through the housing (2) and the ultrasound transducer assembly has the following features: an ultrasound transducer body (4, 7) with a first main surface on the side facing the medium and a second main surface on the side facing away from the medium, first, preferably planar, contact means for electrically contacting the first main surface of the ultrasound transducer body (4, 7), second, preferably planar, contact means for electrically contacting the second main surface of the ultrasound transducer body (4, 7), wherein the first contact means are located between the ultrasound transducer body (4, 7) and the housing (2), through which ultrasound is to be transmitted, of the ultrasound flowmeter.

Abstract: A memory device is provided. The memory device includes a plurality of memory cells and a controller to write data to and read data from the memory cells. Each memory cell includes a first semiconductor material having a spontaneous polarization, a resistive ferroelectric material having a switchable spontaneous polarization, and a second semiconductor material having a spontaneous polarization, the resistive ferroelectric material being positioned between and in contact with the first and second semiconductor materials. The memory device can be configured to store energy that can be released by applying a voltage pulse to the memory device.

Abstract: The present invention relates to ellipsometer and polarimeter systems, and more particularly is an ellipsometer or polarimeter or the like system which operates in a frequency range between 300 GHz or lower and extending to higher than at least 1 Tera-hertz (THz), and preferably through the Infra-red (IR) range up to, and higher than 100 THz, including: a source such as a backward wave oscillator; a Smith-Purcell cell; a free electron laser, or an FTIR source and a solid state device; and a detector such as a Golay cell; a bolometer or a solid state detector; and preferably including a polarization state generator comprising: an odd bounce image rotating system and a polarizer, or two polarizers; and optionally including least one compensator and/or modulator, in addition to an analyzer.

Abstract: A sensor having a substrate is provided in which structures are disposed on a surface of the substrate. The structures can be, e.g., nanostructures. Polarized light is directed toward the sensor, and birefringence of the structures with respect to the light is measured. Target particles that interact with the structures are detected based on changes in the measured birefringence.

Abstract: The present invention relates to ellipsometer and polarimeter systems, and more particularly is an ellipsometer or polarimeter or the like system which operates in a frequency range between 300 GHz or lower and extending to higher than at least 1 Tera-hertz (THz), and preferably through the Infra-red (IR) range up to, and higher than 100 THz, including: a source such as a backward wave oscillator; a Smith-Purcell cell; a free electron laser, or an FTIR source and a solid state device; and a detector such as a Golay cell; a bolometer or a solid state detector; and preferably including a polarization state generator comprising: an odd bounce image rotating system and a polarizer, or two polarizers; and optionally including least one compensator and/or modulator, in addition to an analyzer.

Abstract: A tunable terahertz resonator includes a semiconductor substrate and a metal layer contacting a surface of the semiconductor substrate. A depletion layer is formed in the semiconductor substrate near an interface between the metal layer and the semiconductor substrate. A chiral nanostructure is coupled to the substrate or the metal layer, the chiral nanostructure including a conducting or semiconducting material and having an inductance. A bias circuit applies a bias voltage across the metal layer and the semiconductor substrate to control a capacitance of a tunable capacitor that includes the depletion layer. The chiral nanostructure and the tunable capacitor form a tunable resonant circuit. The tunable terahertz resonator can be used in a terahertz radiation emitter or receiver.