Abstract: A method of applying an ellipsometer or polarimeter system which operates in a frequency range between 300 GHz or lower and extending to higher than at least 1 Tera-hertz (THz), and preferably through the Infra-red (IR) range up to, and higher than 100 THz; wherein the ellipsometer or polarimeter system includes a source such as a backward wave oscillator, a Smith-Purcell cell, a free electron laser, an FTIR source or a solid state device; and a detector such as a Golay cell a bolometer or a solid state detector; and preferably includes at least one odd-bounce polarization state image rotating system and a polarizer, and at least one compensator and/or modulator, in addition to an analyzer.

Abstract: A mass sensor is provided for determining the mass of small objects. The mass sensor has a plurality of nanostructures attached to a substrate. The nanostructures and the substrate are irradiated with an electromagnetic wave to determine a first mechanical-electromagnetic resonant frequency of the mass sensor. After a particle is attached to the nanostructures, the substrate and the nanostructures to which the particle is attached are irradiated with an electromagnetic wave to determine a second mechanical-electromagnetic resonant frequency of the mass sensor. A mass of the particle is determined based on a difference between the first and second mechanical-electromagnetic resonant frequencies.

Abstract: The present invention relates to ellipsometer and polarimeter systems, and more particularly is an ellipsometer or polarimeter or the like system which operates in a frequency range between 300 GHz or lower and extending to higher than at least 1 Tera-hertz (THz), and preferably through the Infra-red (IR) range up to, and higher than 100 THz, including: a source such as a backward wave oscillator; a Smith-Purcell cell; a free electron laser, or an FTIR source and a solid state device; and a detector such as a Golay cell; a bolometer or a solid state detector; and preferably including a polarization state generator comprising: an odd bounce image rotating system and a polarizer, or two polarizers; and optionally including least one compensator and/or modulator, in addition to an analyzer.

Abstract: The present invention relates to an ultrasound transducer assembly for an ultrasound flowmeter, comprising a one-part or multi-part housing (2), which is provided to be connected to a line carrying the medium to be measured, wherein the ultrasound transducer transmits ultrasound through the housing (2) and the ultrasound transducer assembly has the following features: an ultrasound transducer body (4, 7) with a first main surface on the side facing the medium and a second main surface on the side facing away from the medium, first, preferably planar, contact means for electrically contacting the first main surface of the ultrasound transducer body (4, 7), second, preferably planar, contact means for electrically contacting the second main surface of the ultrasound transducer body (4, 7), wherein the first contact means are located between the ultrasound transducer body (4, 7) and the housing (2), through which ultrasound is to be transmitted, of the ultrasound flowmeter.

Abstract: The present invention relates to ellipsometer and polarimeter systems, and more particularly is an ellipsometer or polarimeter or the like system which operates in a frequency range between 300 GHz or lower and extending to higher than at least 1 Tera-hertz (THz), and preferably through the Infra-red (IR) range up to, and higher than 100 THz, including: a source such as a backward wave oscillator; a Smith-Purcell cell; a free electron laser, or an FTIR source and a solid state device; and a detector such as a Golay cell; a bolometer or a solid state detector; and preferably including at least one odd-bounce polarization state image rotating system, and optionally including a polarizer, at least one compensator and/or modulator, in addition to an analyzer.

Abstract: A method of applying spectroscopic ellipsometry to arrive at accurate values of optical and physical properties for thin films on samples having rough or textured surfaces.

Abstract: The present invention relates to ellipsometer and polarimeter systems, and more particularly is an ellipsometer or polarimeter or the like system which operates in a frequency range between 300 GHz or lower and extending to higher than at least 1 Tera-hertz (THz), and preferably through the Infra-red (IR) range up to, and higher than 100 THz, including: a source such as a backward wave oscillator; a Smith-Purcell cell; a free electron laser, or an FTIR source and a solid state device; and a detector such as a Golay cell; a bolometer or a solid state detector; and preferably including at least one odd-bounce polarization state image rotating system, and optionally including a polarizer, at least one compensator and/or modulator, in addition to an analyzer.

Abstract: The present invention relates to ellipsometer and polarimeter systems, and more particularly is an ellipsometer or polarimeter or the like system which operates in a frequency range between 300 GHz or lower and extending to higher than at least 1 Tera-hertz (THz), and preferably through the Infra-red (IR) range up to, and higher than 100 THz, including: a source such as a backward wave oscillator; a Smith-Purcell cell; a free electron laser, or an FTIR source and a solid state device; and a detector such as a Golay cell; a bolometer or a solid state detector; and preferably including at least one odd-bounce polarization state image rotating system, and optionally including a polarizer, at least one compensator and/or modulator, in addition to an analyzer.

Abstract: A memory device is provided. The memory device includes a plurality of memory cells and a controller to write data to and read data from the memory cells. Each memory cell includes a first semiconductor material having a spontaneous polarization, a resistive ferroelectric material having a switchable spontaneous polarization, and a second semiconductor material having a spontaneous polarization, the resistive ferroelectric material being positioned between and in contact with the first and second semiconductor materials. The memory device can be configured to store energy that can be released by applying a voltage pulse to the memory device.

Abstract: A tunable terahertz resonator includes a semiconductor substrate and a metal layer contacting a surface of the semiconductor substrate. A depletion layer is formed in the semiconductor substrate near an interface between the metal layer and the semiconductor substrate. A chiral nanostructure is coupled to the substrate or the metal layer, the chiral nanostructure including a conducting or semiconducting material and having an inductance. A bias circuit applies a bias voltage across the metal layer and the semiconductor substrate to control a capacitance of a tunable capacitor that includes the depletion layer. The chiral nanostructure and the tunable capacitor form a tunable resonant circuit. The tunable terahertz resonator can be used in a terahertz radiation emitter or receiver.

Abstract: A mass sensor is provided for determining the mass of small objects. The mass sensor has a plurality of nanostructures attached to a substrate. The nanostructures and the substrate are irradiated with an electromagnetic wave to determine a first mechanical-electromagnetic resonant frequency of the mass sensor. After a particle is attached to the nanostructures, the substrate and the nanostructures to which the particle is attached are irradiated with an electromagnetic wave to determine a second mechanical-electromagnetic resonant frequency of the mass sensor. A mass of the particle is determined based on a difference between the first and second mechanical-electromagnetic resonant frequencies.

Abstract: The present invention relates to ellipsometer and polarimeter systems, and more particularly is an ellipsometer or polarimeter or the like system which operates in a frequency range between 300 GHz or lower and extending to higher than at least 1 Tera-hertz (THz), and preferably through the Infra-red (IR) range up to, and higher than 100 THz, including: a source such as a backward wave oscillator; a Smith-Purcell cell; a free electron laser, or an FTIR source and a solid state device; and a detector such as a Golay cell; a bolometer or a solid state detector; and preferably including at least one odd-bounce polarization state image rotating system, and optionally including a polarizer, at least one compensator and/or modulator, in addition to an analyzer.