Patents by Inventor Tiphaine Dupont

Tiphaine Dupont has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220140182
    Abstract: An optoelectronic device including an array of axial diodes, each diode forming a resonant cavity having a standing electromagnetic wave forming therein, each light-emitting diode including an active area located substantially at the level of an extremum of the electromagnetic wave, the array forming a photonic crystal configured to maximize the intensity of the electromagnetic radiation supplied by the diode array.
    Type: Application
    Filed: June 19, 2019
    Publication date: May 5, 2022
    Applicant: Aledia
    Inventors: Tiphaine Dupont, Ivan-Christophe Robin
  • Publication number: 20220029048
    Abstract: A method for selectively filling, with a filling liquid, a first cavity from among a plurality of cavities, each cavity opening out at a front face of a substrate. The method includes a processing step for altering the surface energy of the first internal surface of the first cavity or the surface energy of the second internal surfaces of the other cavities, such that the first surface has a first surface energy and the second surfaces have a second surface energy and a step including a sequence for spreading the filling liquid, the first energy and the second energy being adjusted such that the first and the second surfaces exert an attracting effect and a repelling effect, respectively, on the liquid.
    Type: Application
    Filed: November 29, 2019
    Publication date: January 27, 2022
    Applicants: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, ALEDIA
    Inventors: Emmanuel OLLIER, Fabrice EMIEUX, Frédéric ROUX, Ulrich SOUPREMANIEN, Sylvia SCARINGELLA, Tiphaine DUPONT, Clémence TALLET, Abdelhay ABOULAICH
  • Publication number: 20210399166
    Abstract: A light-emitting diode 100 includes a first region 1, for example of the P type, formed in a first layer 10 and forming, in a direction normal to a basal plane, a stack with a second region 2 having at least one quantum well formed in a second layer 20, and including a third region 3, for example of the N type, extending in the direction normal to the plane, bordering and in contact with the first and second regions 1, 2, through the first and second layers 10, 20. A process for producing a light-emitting diode 100 in which the third region 3 is formed by implantation into and through the first and second layers 10, 20.
    Type: Application
    Filed: November 20, 2019
    Publication date: December 23, 2021
    Inventors: Ivan-Christophe ROBIN, Xavier HUGON, Philippe GILET, Tiphaine DUPONT
  • Publication number: 20210391500
    Abstract: Disclosed is an optoelectronic device including a substrate and at least two sub-pixels, each sub-pixel being adapted to emit a respective first radiation, the substrate, each sub-pixel including: at least one fin made of a first semiconductor material, the fin along a normal direction perpendicular to the substrate, each fin having a first lateral side; and a covering layer including one or several radiation-emitting layer, the covering layer extending on the first lateral side of each fin. The sub-pixels delimit a recess located between both sub-pixels, and a blocking structure being interposed between both sub-pixels in the recess, the blocking structure being adapted to prevent the first radiation emitted by a sub-pixel to reach the other sub-pixel through the blocking structure.
    Type: Application
    Filed: October 21, 2019
    Publication date: December 16, 2021
    Inventors: Pamela RUEDA FONSECA, Tiphaine DUPONT, Wei Sin TAN
  • Publication number: 20210384175
    Abstract: An optoelectronic device including a support including a face; light-emitting diodes lying on the face and comprising including semiconductor elements in the form of wires, cones or truncated cones; for each light-emitting diode, an encapsulation block at least partially transparent to the radiation emitted by the light-emitting diodes and covering the light-emitting diode, the maximum thickness of the encapsulation block being comprised between 1 ?m and 30 ?m, interstices of air being present between the encapsulation blocks covering adjacent diodes; and an electrically conductive layer covering the encapsulation blocks, wherein the refractive index of the encapsulation block covering at least one of the light-emitting diodes is comprised between 1.3 and 1.6.
    Type: Application
    Filed: October 18, 2019
    Publication date: December 9, 2021
    Applicant: Aledia
    Inventors: Tiphaine Dupont, Ivan-Christophe Robin
  • Publication number: 20210366983
    Abstract: The manufacture of an optoelectronic device includes the formation of wire-like shaped light-emitting diodes and the formation of spacing walls transparent to the light radiation originating from the diodes. The lateral sidewalls of each diode are surrounded by at least one of the spacing walls. Light confinement walls directly cover the lateral sidewalls of the spacing walls by being in contact with the latter. The radiation originating from each diode and directed in the direction of the adjacent diodes is blocked by the confinement wall. The upper borders of the diodes are covered by the light confinement material so as to ensure a light extraction by the rear face of the optoelectronic device. An optoelectronic device is also described as such.
    Type: Application
    Filed: June 19, 2019
    Publication date: November 25, 2021
    Inventors: Olivier JEANNIN, Erwan DORNEL, Eric POURQUIER, Tiphaine DUPONT
  • Publication number: 20210273132
    Abstract: An optoelectronic device including an array of axial diodes, each diode forming a resonant cavity having a standing electromagnetic wave forming therein, each light-emitting diode including an active area located substantially at the level of an extremum of the electromagnetic wave, the array forming a photonic crystal configured to maximize the intensity of the electromagnetic radiation supplied by the diode array.
    Type: Application
    Filed: June 19, 2019
    Publication date: September 2, 2021
    Applicant: Aledia
    Inventors: Tiphaine Dupont, Ivan-Christophe Robin
  • Publication number: 20210265534
    Abstract: There is described an optoelectronic device where each light-emitting diode has a wire-like shape. Spacing walls are formed so that the lateral sidewalls of each light-emitting diode are surrounded by at least one of the spacing walls. Light confinement walls directly cover the lateral sidewalls of the spacing walls by being in contact with the latter. The spacing walls have a convex-shaped outer face. At least one of the spacing walls has, over a lower portion, a thickness that increases when getting away from the substrate. They have, over an upper portion, a thickness that decreases at the level of the upper border of the light-emitting diode when getting away from the substrate. The light confinement walls have an inner face having a concave shape matching with the convex shape and directed towards the light-emitting diode for which it confines the light radiation thereof.
    Type: Application
    Filed: June 19, 2019
    Publication date: August 26, 2021
    Inventors: Olivier JEANNIN, Erwan DORNEL, Eric POURQUIER, Tiphaine DUPONT
  • Publication number: 20210257512
    Abstract: The manufacture of an optoelectronic device includes the formation of light-emitting diodes where each one has a wire form, the formation of spacing walls made of a first dielectric material transparent to the light radiation originating from the diodes. The lateral sidewalls of each diode are surrounded by spacing walls. Light confinement walls are made of a second material adapted to block the light radiation originating from the diodes. The light confinement walls directly cover the lateral sidewalls of the spacing walls by being in contact with the wherein. A thin layer of the second material is deposited so as to directly cover the lateral sidewalls of the spacing walls by being in contact with the wherein and cover the upper border of the light-emitting diodes. The empty spaces delimited between the spacing walls at the level of the areas between the light-emitting diodes are also filled by the thin layer.
    Type: Application
    Filed: June 19, 2019
    Publication date: August 19, 2021
    Inventors: Olivier JEANNIN, Erwan DORNEL, Eric POURQUIER, Tiphaine DUPONT
  • Patent number: 10923528
    Abstract: An optoelectronic device including a substrate including first and second opposite surfaces and lateral electrical insulation elements extending in the substrate and delimiting first electrically-insulated semiconductor or conductive portions. The optoelectronic device includes, for each first portion, an assembly of light-emitting diodes electrically coupled to the first portion. The optoelectronic device includes an electrode layer covering all the light-emitting diodes, a protection layer covering the electrode layer, and walls extending in the protection layer and delimiting second portions surrounding or opposite the assemblies of light-emitting diodes. The walls contain at least one material from the group including air, a metal, a semiconductor material, a metal alloy, a partially transparent material, and a core made of an at least partially transparent material covered with an opaque or reflective layer.
    Type: Grant
    Filed: June 22, 2017
    Date of Patent: February 16, 2021
    Assignee: Aledia
    Inventors: Tiphaine Dupont, Sylvia Scaringella, Erwan Dornel, Philippe Gibert, Philippe Gilet, Xavier Hugon, Fabienne Goutaudier
  • Publication number: 20200119233
    Abstract: An optoelectronic device, including: light-emitting sources, each light-emitting source being capable of emitting a first radiation at a first wavelength; photoluminescent blocks distributed into first photo-luminescent blocks capable of converting by optical pumping the first radiation into a second radiation at a second wavelength and second photoluminescent blocks capable of converting by optical pumping the first radiation into a third radiation at a third wavelength; and for each photoluminescent block, an optical coupler including a first photonic crystal at least partially surrounding the photoluminescent block and covering, with the photo-luminescent block, one of the light-emitting sources next to the photoluminescent block, the optical coupler being capable of modifying the propagation direction of rays of the first radiation emitted by the light-emitting source to redirect the rays towards the photoluminescent block.
    Type: Application
    Filed: June 8, 2018
    Publication date: April 16, 2020
    Applicant: Aledia
    Inventor: Tiphaine Dupont
  • Patent number: 10418506
    Abstract: A light-emitting device including a substrate at least partially doped with a first type of conductivity and including a face; light-emitting diodes each including at least one three-dimensional semiconducting element which is undoped or doped with the first type of conductivity and resting on the said face; and semiconducting regions forming photodiodes, at least partially doped with a second type of conductivity opposite to the first type of conductivity and extending in the substrate from the said face between at least some of the three-dimensional semiconducting elements, a portion of the substrate of first type of conductivity extending up to the said face at the level of each three-dimensional semiconducting element.
    Type: Grant
    Filed: September 9, 2016
    Date of Patent: September 17, 2019
    Assignee: Aledia
    Inventors: Tiphaine Dupont, Erwan Dornel
  • Patent number: 10411161
    Abstract: A light-emitting device including a substrate at least partially doped with a first conductivity type and including a first surface and light-emitting diodes, each diode including at least one three-dimensional semiconductor element, which is or is not doped with the first conductivity type. The semiconductor elements rest on a continuous first portion of the first surface and at least one semiconductor region that forms a photodiode that is at least partially doped with a second conductivity type which is opposite the first conductivity type, and extends into the substrate from a second portion of the first surface that is separate from the first portion.
    Type: Grant
    Filed: September 9, 2016
    Date of Patent: September 10, 2019
    Assignee: Aledia
    Inventors: Tiphaine Dupont, Erwan Dornel
  • Publication number: 20190165040
    Abstract: An optoelectronic device including a substrate including first and second opposite surfaces and lateral electrical insulation elements extending in the substrate and delimiting first electrically-insulated semiconductor or conductive portions. The optoelectronic device includes, for each first portion, an assembly of light-emitting diodes electrically coupled to the first portion. The optoelectronic device includes an electrode layer covering all the light-emitting diodes, a protection layer covering the electrode layer, and walls extending in the protection layer and delimiting second portions surrounding or opposite the assemblies of light-emitting diodes. The walls contain at least one material from the group including air, a metal, a semiconductor material, a metal alloy, a partially transparent material, and a core made of an at least partially transparent material covered with an opaque or reflective layer.
    Type: Application
    Filed: June 22, 2017
    Publication date: May 30, 2019
    Applicant: Aledia
    Inventors: Tiphaine Dupont, Sylvia Scaringella, Erwan Dornel, Philippe Gibert, Philippe Gilet, Xavier Hugon, Fabienne Goutaudier
  • Patent number: 10211365
    Abstract: A method for producing optoelectronic devices, including the following successive steps: providing a substrate having a first face; on the first face, forming sets of light-emitting diodes including wire-like, conical or frustoconical semiconductor elements; covering all of the first face with a layer encapsulating the light-emitting diodes; forming a conductive element that is insulated from the substrate and extends through the substrate from the second face to at least the first face; reducing the thickness of the substrate; and cutting the resulting structure in order to separate each set of light-emitting diodes.
    Type: Grant
    Filed: September 30, 2014
    Date of Patent: February 19, 2019
    Assignees: Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Aledia
    Inventors: Christophe Bouvier, Emilie Pougeoise, Xavier Hugon, Carlo Cagli, Tiphaine Dupont, Philippe Gibert, Nacer Aitmani
  • Patent number: 10177288
    Abstract: An optoelectronic device including a semiconductor substrate having a face, light-emitting diodes arranged on the face and including wired conical or frustoconical semiconductor elements, and an at least partially transparent dielectric layer covering the light-emitting diodes, the refractive index of the dielectric layer being between 1.6 et 1.8.
    Type: Grant
    Filed: March 22, 2018
    Date of Patent: January 8, 2019
    Assignees: Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Aledia
    Inventors: Tiphaine Dupont, Yohan Desieres
  • Publication number: 20180301594
    Abstract: A method for producing optoelectronic devices, including the following successive steps: providing a substrate having a first face; on the first face, forming sets of light-emitting diodes including wire-like, conical or frustoconical semiconductor elements; covering all of the first face with a layer encapsulating the light-emitting diodes; forming a conductive element that is insulated from the substrate and extends through the substrate from the second face to at least the first face; reducing the thickness of the substrate; and cutting the resulting structure in order to separate each set of light-emitting diodes.
    Type: Application
    Filed: June 19, 2018
    Publication date: October 18, 2018
    Applicants: Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Aledia
    Inventors: Christophe Bouvier, Emilie Pougeoise, Xavier Hugon, Carolo Cagli, Tiphaine Dupont, Philippe Gibert, Nacer Aitmani, Vincent Beix, Thomas Lacave, Marion Volpert, Olivier Girard, Denis Renaud, Brigitte Soulier
  • Publication number: 20180261584
    Abstract: A light-emitting device including a substrate at least partially doped with a first type of conductivity and including a face; light-emitting diodes each including at least one three-dimensional semiconducting element which is undoped or doped with the first type of conductivity and resting on the said face; and semiconducting regions forming photodiodes, at least partially doped with a second type of conductivity opposite to the first type of conductivity and extending in the substrate from the said face between at least some of the three-dimensional semiconducting elements, a portion of the substrate of first type of conductivity extending up to the said face at the level of each three-dimensional semiconducting element.
    Type: Application
    Filed: September 9, 2016
    Publication date: September 13, 2018
    Applicant: Aledia
    Inventors: Tiphaine Dupont, Erwan Dornel
  • Publication number: 20180254382
    Abstract: A light-emitting device including a substrate at least partially doped with a first conductivity type and including a first surface and light-emitting diodes, each diode including at least one three-dimensional semiconductor element, which is or is not doped with the first conductivity type. The semiconductor elements rest on a continuous first portion of the first surface and at least one semiconductor region that forms a photodiode that is at least partially doped with a second conductivity type which is opposite the first conductivity type, and extends into the substrate from a second portion of the first surface that is separate from the first portion.
    Type: Application
    Filed: September 9, 2016
    Publication date: September 6, 2018
    Applicant: Aledia
    Inventors: Tiphaine Dupont, Erwan Dornel
  • Patent number: 10062818
    Abstract: An optoelectronic device including a semiconductor substrate having a face, light-emitting diodes arranged on the face and including wired conical or frustoconical semiconductor elements, and an at least partially transparent dielectric layer covering the light-emitting diodes, the refractive index of the dielectric layer being between 1.6 et 1.8.
    Type: Grant
    Filed: February 7, 2017
    Date of Patent: August 28, 2018
    Assignee: Aledia
    Inventors: Tiphaine Dupont, Yohan Desieres