Abstract: An optoelectronic device including an array of axial diodes, each diode forming a resonant cavity having a standing electromagnetic wave forming therein, each light-emitting diode including an active area located substantially at the level of an extremum of the electromagnetic wave, the array forming a photonic crystal configured to maximize the intensity of the electromagnetic radiation supplied by the diode array.

Abstract: There is described an optoelectronic device where each light-emitting diode has a wire-like shape. Spacing walls are formed so that the lateral sidewalls of each light-emitting diode are surrounded by at least one of the spacing walls. Light confinement walls directly cover the lateral sidewalls of the spacing walls by being in contact with the latter. The spacing walls have a convex-shaped outer face. At least one of the spacing walls has, over a lower portion, a thickness that increases when getting away from the substrate. They have, over an upper portion, a thickness that decreases at the level of the upper border of the light-emitting diode when getting away from the substrate. The light confinement walls have an inner face having a concave shape matching with the convex shape and directed towards the light-emitting diode for which it confines the light radiation thereof.

Abstract: The manufacture of an optoelectronic device includes the formation of light-emitting diodes where each one has a wire form, the formation of spacing walls made of a first dielectric material transparent to the light radiation originating from the diodes. The lateral sidewalls of each diode are surrounded by spacing walls. Light confinement walls are made of a second material adapted to block the light radiation originating from the diodes. The light confinement walls directly cover the lateral sidewalls of the spacing walls by being in contact with the wherein. A thin layer of the second material is deposited so as to directly cover the lateral sidewalls of the spacing walls by being in contact with the wherein and cover the upper border of the light-emitting diodes. The empty spaces delimited between the spacing walls at the level of the areas between the light-emitting diodes are also filled by the thin layer.

Abstract: An optoelectronic device including a substrate including first and second opposite surfaces and lateral electrical insulation elements extending in the substrate and delimiting first electrically-insulated semiconductor or conductive portions. The optoelectronic device includes, for each first portion, an assembly of light-emitting diodes electrically coupled to the first portion. The optoelectronic device includes an electrode layer covering all the light-emitting diodes, a protection layer covering the electrode layer, and walls extending in the protection layer and delimiting second portions surrounding or opposite the assemblies of light-emitting diodes. The walls contain at least one material from the group including air, a metal, a semiconductor material, a metal alloy, a partially transparent material, and a core made of an at least partially transparent material covered with an opaque or reflective layer.

Abstract: An optoelectronic device, including: light-emitting sources, each light-emitting source being capable of emitting a first radiation at a first wavelength; photoluminescent blocks distributed into first photo-luminescent blocks capable of converting by optical pumping the first radiation into a second radiation at a second wavelength and second photoluminescent blocks capable of converting by optical pumping the first radiation into a third radiation at a third wavelength; and for each photoluminescent block, an optical coupler including a first photonic crystal at least partially surrounding the photoluminescent block and covering, with the photo-luminescent block, one of the light-emitting sources next to the photoluminescent block, the optical coupler being capable of modifying the propagation direction of rays of the first radiation emitted by the light-emitting source to redirect the rays towards the photoluminescent block.

Abstract: A light-emitting device including a substrate at least partially doped with a first type of conductivity and including a face; light-emitting diodes each including at least one three-dimensional semiconducting element which is undoped or doped with the first type of conductivity and resting on the said face; and semiconducting regions forming photodiodes, at least partially doped with a second type of conductivity opposite to the first type of conductivity and extending in the substrate from the said face between at least some of the three-dimensional semiconducting elements, a portion of the substrate of first type of conductivity extending up to the said face at the level of each three-dimensional semiconducting element.

Abstract: A light-emitting device including a substrate at least partially doped with a first conductivity type and including a first surface and light-emitting diodes, each diode including at least one three-dimensional semiconductor element, which is or is not doped with the first conductivity type. The semiconductor elements rest on a continuous first portion of the first surface and at least one semiconductor region that forms a photodiode that is at least partially doped with a second conductivity type which is opposite the first conductivity type, and extends into the substrate from a second portion of the first surface that is separate from the first portion.

Abstract: An optoelectronic device including a substrate including first and second opposite surfaces and lateral electrical insulation elements extending in the substrate and delimiting first electrically-insulated semiconductor or conductive portions. The optoelectronic device includes, for each first portion, an assembly of light-emitting diodes electrically coupled to the first portion. The optoelectronic device includes an electrode layer covering all the light-emitting diodes, a protection layer covering the electrode layer, and walls extending in the protection layer and delimiting second portions surrounding or opposite the assemblies of light-emitting diodes. The walls contain at least one material from the group including air, a metal, a semiconductor material, a metal alloy, a partially transparent material, and a core made of an at least partially transparent material covered with an opaque or reflective layer.

Abstract: A method for producing optoelectronic devices, including the following successive steps: providing a substrate having a first face; on the first face, forming sets of light-emitting diodes including wire-like, conical or frustoconical semiconductor elements; covering all of the first face with a layer encapsulating the light-emitting diodes; forming a conductive element that is insulated from the substrate and extends through the substrate from the second face to at least the first face; reducing the thickness of the substrate; and cutting the resulting structure in order to separate each set of light-emitting diodes.

Abstract: An optoelectronic device including a semiconductor substrate having a face, light-emitting diodes arranged on the face and including wired conical or frustoconical semiconductor elements, and an at least partially transparent dielectric layer covering the light-emitting diodes, the refractive index of the dielectric layer being between 1.6 et 1.8.

Abstract: A method for producing optoelectronic devices, including the following successive steps: providing a substrate having a first face; on the first face, forming sets of light-emitting diodes including wire-like, conical or frustoconical semiconductor elements; covering all of the first face with a layer encapsulating the light-emitting diodes; forming a conductive element that is insulated from the substrate and extends through the substrate from the second face to at least the first face; reducing the thickness of the substrate; and cutting the resulting structure in order to separate each set of light-emitting diodes.

Abstract: A light-emitting device including a substrate at least partially doped with a first type of conductivity and including a face; light-emitting diodes each including at least one three-dimensional semiconducting element which is undoped or doped with the first type of conductivity and resting on the said face; and semiconducting regions forming photodiodes, at least partially doped with a second type of conductivity opposite to the first type of conductivity and extending in the substrate from the said face between at least some of the three-dimensional semiconducting elements, a portion of the substrate of first type of conductivity extending up to the said face at the level of each three-dimensional semiconducting element.

Abstract: A light-emitting device including a substrate at least partially doped with a first conductivity type and including a first surface and light-emitting diodes, each diode including at least one three-dimensional semiconductor element, which is or is not doped with the first conductivity type. The semiconductor elements rest on a continuous first portion of the first surface and at least one semiconductor region that forms a photodiode that is at least partially doped with a second conductivity type which is opposite the first conductivity type, and extends into the substrate from a second portion of the first surface that is separate from the first portion.

Abstract: An optoelectronic device including a semiconductor substrate having a face, light-emitting diodes arranged on the face and including wired conical or frustoconical semiconductor elements, and an at least partially transparent dielectric layer covering the light-emitting diodes, the refractive index of the dielectric layer being between 1.6 et 1.8.

Abstract: An optoelectronic device including a semiconductor substrate having a face, light-emitting diodes arranged on the face and including wired conical or frustoconical semiconductor elements, and an at least partially transparent dielectric layer covering the light-emitting diodes, the refractive index of the dielectric layer being between 1.6 et 1.8.

Abstract: An optoelectronic device including a semiconductor substrate having a face, light-emitting diodes arranged on the face and including wired conical or frustoconical semiconductor elements, and an at least partially transparent dielectric layer covering the light-emitting diodes, the refractive index of the dielectric layer being between 1.6 et 1.8.

Abstract: An optoelectronic device including a semiconductor substrate having a face, light-emitting diodes arranged on the face and including wired conical or frustoconical semiconductor elements, and an at least partially transparent dielectric layer covering the light-emitting diodes, the refractive index of the dielectric layer being between 1.6 et 1.8.

Abstract: An optoelectronic device including a semiconductor substrate having a face, light-emitting diodes arranged on the face and including wired conical or frustoconical semiconductor elements, and an at least partially transparent dielectric layer covering the light-emitting diodes, the refractive index of the dielectric layer being between 1.6 et 1.8.

Abstract: A method for producing optoelectronic devices, including the following successive steps: providing a substrate having a first face; on the first face, forming sets of light-emitting diodes including wire-like, conical or frustoconical semiconductor elements; covering all of the first face with a layer encapsulating the light-emitting diodes; forming a conductive element that is insulated from the substrate and extends through the substrate from the second face to at least the first face; reducing the thickness of the substrate; and cutting the resulting structure in order to separate each set of light-emitting diodes.

Abstract: A method for introducing light into a waveguide formed on the upper surface of a microelectronics substrate, by means of a distributed feedback laser device formed by the association of an SOI-type structure having a portion forming said waveguide, of a stack of III-V semiconductor gain materials partially covering the waveguide, and of an optical grating, wherein the grating step is selected so that the optical power of the laser beam circulates in a loop from the III-V stack to the waveguide.