Patents by Inventor Tirumani N. Swaminathan

Tirumani N. Swaminathan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180080141
    Abstract: Methods for growing a reduced dislocation crystal ingot in an ingot growing system are disclosed. The system has a first crucible with a first base and a first sidewall extending upward from the first base to define an outer cavity. The method includes placing a weir in the outer cavity, placing a second crucible on the weir, placing feedstock material into the outer cavity, and melting the feedstock material to allow movement of the melt from the outer cavity inward of an intermediate cavity and into an inner cavity.
    Type: Application
    Filed: November 30, 2017
    Publication date: March 22, 2018
    Inventors: Tirumani N. Swaminathan, Salvador Zepeda, John David Hilker
  • Publication number: 20180044815
    Abstract: A system for growing an ingot from a melt includes an outer crucible, an inner crucible, and a weir. The outer crucible includes a first sidewall and a first base. The first sidewall and the first base define an outer cavity for containing the melt. The inner crucible is located within the outer cavity, and has a central longitudinal axis. The inner crucible includes a second sidewall and a second base having an opening therein.
    Type: Application
    Filed: October 25, 2017
    Publication date: February 15, 2018
    Inventors: Tirumani N. Swaminathan, John David Hilker, Salvador Zepeda
  • Patent number: 9863063
    Abstract: A system for growing a crystal ingot includes a crucible and a weir. The crucible has a base and a sidewall for the containment of a silicon melt therein. The weir is located along the base of the crucible inward from the sidewall of the crucible. The weir has a body connected with at least a pair of legs disposed to inhibit movement of the silicon melt therebetween.
    Type: Grant
    Filed: December 16, 2013
    Date of Patent: January 9, 2018
    Assignee: Corner Star Limited
    Inventor: Tirumani N. Swaminathan
  • Patent number: 9863062
    Abstract: A system for growing an ingot from a melt includes a first crucible, a second crucible, and a weir. The first crucible has a first base and a first sidewall that form an outer cavity for containing the melt. The weir is located on top of the first base at a location inward from the first sidewall to inhibit movement of the melt from a location outward of the weir to a location inward of the weir. The second crucible is sized for placement within the outer cavity and has a second base and a second sidewall that form an inner cavity. Related methods are also disclosed.
    Type: Grant
    Filed: March 14, 2013
    Date of Patent: January 9, 2018
    Assignee: Corner Star Limited
    Inventors: Tirumani N. Swaminathan, Salvador Zepeda, John David Hilker
  • Patent number: 9822466
    Abstract: A system for growing an ingot from a melt includes an outer crucible, an inner crucible, and a weir. The outer crucible includes a first sidewall and a first base. The first sidewall and the first base define an outer cavity for containing the melt. The inner crucible is located within the outer cavity, and has a central longitudinal axis. The inner crucible includes a second sidewall and a second base having an opening therein. The opening in the second base is concentric with the central longitudinal axis. The weir is disposed between the outer crucible and the inner crucible for supporting the inner crucible.
    Type: Grant
    Filed: November 22, 2013
    Date of Patent: November 21, 2017
    Assignee: Corner Star Limited
    Inventors: Tirumani N. Swaminathan, John David Hilker, Salvador Zepeda
  • Publication number: 20170016141
    Abstract: Production of silicon ingots in a crystal puller that involve reduction in the formation of silicon deposits on the puller exhaust system are disclosed.
    Type: Application
    Filed: July 17, 2015
    Publication date: January 19, 2017
    Applicant: SUNEDISON, INC.
    Inventors: Tirumani N. Swaminathan, Jihong Chen
  • Publication number: 20170016142
    Abstract: Production of silicon ingots in a crystal puller that involve reduction of the erosion rate at the crucible contact point are disclosed.
    Type: Application
    Filed: July 17, 2015
    Publication date: January 19, 2017
    Applicant: SunEdison, Inc.
    Inventors: Jihong Chen, Tirumani N. Swaminathan
  • Patent number: 9376762
    Abstract: An apparatus for growing ingots by the Czochralski method includes a growth chamber defining an enclosure configured to circulate a purge gas about the growing ingot and a crucible provided in the growth chamber configured to hold the molten silicon. A weir is supported in the crucible and is configured to separate the molten silicon into an inner growth region surrounding the melt/crystal interface from an outer region configured to receive the crystalline feedstock. The weir comprises at least one sidewall extending vertically and a cap extending substantially perpendicularly to the sidewall.
    Type: Grant
    Filed: November 29, 2012
    Date of Patent: June 28, 2016
    Assignee: Solaicx
    Inventor: Tirumani N. Swaminathan
  • Publication number: 20150144056
    Abstract: A system for growing an ingot from a melt includes an outer crucible, an inner crucible, and a weir. The outer crucible includes a first sidewall and a first base. The first sidewall and the first base define an outer cavity for containing the melt. The inner crucible is located within the outer cavity, and has a central longitudinal axis. The inner crucible includes a second sidewall and a second base having an opening therein. The opening in the second base is concentric with the central longitudinal axis. The weir is disposed between the outer crucible and the inner crucible for supporting the inner crucible.
    Type: Application
    Filed: November 22, 2013
    Publication date: May 28, 2015
    Inventors: Tirumani N. Swaminathan, John David Hilker, Salvador Zepeda
  • Publication number: 20140261154
    Abstract: A system for growing an ingot from a melt includes a first crucible, a second crucible, and a weir. The first crucible has a first base and a first sidewall that form an outer cavity for containing the melt. The weir is located on top of the first base at a location inward from the first sidewall to inhibit movement of the melt from a location outward of the weir to a location inward of the weir. The second crucible is sized for placement within the outer cavity and has a second base and a second sidewall that form an inner cavity. Related methods are also disclosed.
    Type: Application
    Filed: March 14, 2013
    Publication date: September 18, 2014
    Inventors: Tirumani N. Swaminathan, Salvador Zepeda, John David Hilker
  • Publication number: 20140174337
    Abstract: A system for growing a crystal ingot includes a crucible and a weir. The crucible has a base and a sidewall for the containment of a silicon melt therein. The weir is located along the base of the crucible inward from the sidewall of the crucible. The weir has a body connected with at least a pair of legs disposed to inhibit movement of the silicon melt therebetween.
    Type: Application
    Filed: December 16, 2013
    Publication date: June 26, 2014
    Inventor: Tirumani N. Swaminathan
  • Publication number: 20140144372
    Abstract: An apparatus for growing ingots by the Czochralski method includes a growth chamber defining an enclosure configured to circulate a purge gas about the growing ingot and a crucible provided in the growth chamber configured to hold the molten silicon. A weir is supported in the crucible and is configured to separate the molten silicon into an inner growth region surrounding the melt/crystal interface from an outer region configured to receive the crystalline feedstock. The weir comprises at least one sidewall extending vertically and a cap extending substantially perpendicularly to the sidewall.
    Type: Application
    Filed: November 29, 2012
    Publication date: May 29, 2014
    Applicant: SOLAICX, INC.
    Inventor: Tirumani N. Swaminathan
  • Publication number: 20140144371
    Abstract: An apparatus for growing ingots by the Czochralski method is described. The ingots are drawn from a melt/crystal interface in a quantity of molten silicon replenished by crystalline feedstock. The apparatus includes a crucible configured to hold the molten silicon and a weir supported in the crucible. The weir is configured to separate the molten silicon into an inner growth region from an outer region configured to receive the crystalline feedstock. The weir includes a sidewall extending vertically and a top wall. An annular heat shield is disposed on the top wall of the weir that covers at least about 70% of the outer region.
    Type: Application
    Filed: November 29, 2012
    Publication date: May 29, 2014
    Applicant: SOLAICX, INC.
    Inventor: Tirumani N. Swaminathan