Abstract: In one embodiment, a method includes accessing at least a portion of a training dataset for a trained neural network that includes multiple layers, where each layer includes a number of parameters, and where the training dataset includes multiple training samples that each include an input and a ground-truth output used to train the trained neural network. The method further includes training a hypernetwork to generate a layer-specific compression mask for each of one or more of the multiple layers of the trained neural network. The method further includes generating, by the trained hypernetwork, a final layer-specific compression mask for the trained neural network and compressing the trained neural network by reducing, for each of the one or more layers of the neural network, the number of parameters of that layer according to the final layer-specific compression mask.

Abstract: Gate spacer that improves performance and methods for fabricating such are disclosed herein. An exemplary device includes a gate stack disposed over a semiconductor layer and a gate spacer disposed on a sidewall of the gate stack. A source/drain feature is disposed in the semiconductor layer and adjacent the gate spacer. A low-k contact etch stop layer is disposed on a top surface and a sidewall of the gate spacer and a portion of the gate spacer is disposed between the low-k contact etch stop layer and the semiconductor layer. A source/drain contact is disposed on the source/drain feature and adjacent the low-k contact etch stop layer.

Abstract: An appliance heating control method and apparatus for user customizable vaping. The method comprises: acquiring appliance environment information and cigarette parameter information, and selecting, from a cigarette heating temperature curve library corresponding to the cigarette parameter information, an initial heating temperature curve that matches the appliance environment information; generating parameter adjustment guidance information on the basis of the initial heating temperature curve, and displaying the initial heating temperature curve and the parameter adjustment guidance information; and receiving a parameter adjustment instruction, adjusting the initial heating temperature curve on the basis of the parameter adjustment instruction, so as to obtain an adjusted heating temperature curve, and controlling, according to the adjusted heating temperature curve, an appliance to perform heating.

Abstract: A pose calculating apparatus and method are provided. The pose calculating apparatus receives a plurality of real-time images and a plurality of inertial measurement parameters corresponding to at least one inertial sensor worn by a user. The pose calculating apparatus determines a pose calculating mode corresponding to each of a plurality of body regions of the user based on the real-time images and the inertial measurement parameters, wherein the pose calculating mode corresponds to a static mode or a motion mode. The pose calculating apparatus calculates a pose corresponding to each of the body regions based on the pose calculating mode corresponding to each of the body regions.

Abstract: An antenna module and a portable electric device are provided. The antenna module includes a flexible substrate, a first antenna circuit and a second antenna circuit. Each of an L-shaped bent portion and a U-shaped bent portion of the flexible substrate has a first end and a second end opposite to each other. The first end of the L-shaped bent portion is connected to a first main body of the flexible substrate. The first end of the U-shaped bent portion is connected to the second end of the L-shaped bent portion. The second end of the U-shaped bent portion is connected to a second main body of the flexible substrate. The first antenna circuit and the second antenna circuit are respectively disposed on the first main body and the second main portion. The portable electric device includes a casing and the antenna module disposed at a corner.

Abstract: A method for extracting germanium based on acid decomposition is provided, including acid decomposition and post-treatment steps, and specifically including: adding an acid to a coal ash for conditioning to obtain a material a; heating the material a to 350° C. to 800° C., and keeping the material a at this temperature for 10 min to 10 h to obtain an acid-decomposed material b; milling the acid-decomposed material b until more than 60% of a milled material has a particle size of less than 200 mesh to obtain a material c; subjecting the material c to distillation to obtain a residual slurry d and a distillation fraction e; and hydrolyzing the distillation fraction e with a dilute hydrochloric acid solution, and then oven-drying to obtain GeO2.

Abstract: Methods, systems, and devices implementing self-timing read termination are described. A memory system may perform a read operation in which the memory system generates a first signal and a second signal to couple a first sense component and a second sense component with a global access line, respectively. The first sense component may be coupled with one or more memory cells via an access line, and the second sense component may be configured to determine one or more logic values of the one or more memory cells based on the coupling with the global access line. The memory system may support a self-timed termination of the first signal to decouple the first sense component from the global access line. The memory system may generate a third signal to terminate the first signal based on determining the one or more logic values.

Abstract: Some embodiments relate to an integrated device, including a semiconductor film accommodating a two-dimensional carrier gas (2DCG) over a substrate; a first source/drain electrode over the semiconductor film; a second source/drain electrode over the semiconductor film; a semiconductor capping structure between the first source/drain electrode and the second source/drain electrode; a first gate overlying the semiconductor capping structure and between the first source/drain electrode and the second source/drain electrode in a first direction; a first helping gate overlying the semiconductor capping structure and bordering the first gate, wherein the first helping gate and the second source/drain electrode are arranged in a line extending in a second direction transverse to the first direction.

Abstract: Disclosed is an intelligent control method for a refill-type screw insulin injection pump, including the following steps: starting the refill-type screw insulin injection pump, and filling prefabricated liquid insulin medicine into the refill injection mechanism; operating the key operation module to enable the intelligent control module to control the power device to work; when the primary telescopic screw mechanism extends to a limit, the sensor assembly transmits a signal to the intelligent control module, and the intelligent control module controls a rotational speed of the power device to be slowed down to reduce impact force of the primary telescopic screw mechanism; the refill injection mechanism performs the injection of liquid insulin medicine; and repeating the above steps, and refilling liquid insulin medicine to prepare for the next injection upon completion of the injection of liquid insulin medicine.

Abstract: A method of forming first and second fin field effect transistors (finFETs) on a substrate includes forming first and second fin structures of the first and second finFETs, respectively, on the substrate and forming first and second oxide regions having first and second thicknesses on top surfaces of the first and second fin structures, respectively. The method further includes forming third and fourth oxide regions having third and fourth thicknesses on sidewalls on the first and second fin structures, respectively. The first and second thicknesses are greater than the third and fourth thicknesses, respectively. The method further includes forming a first polysilicon structure on the first and third oxide regions and forming a second polysilicon structure on the second and fourth oxide regions.

Abstract: A method is disclosed that includes performing a directional ion implantation process on a developed resist pattern to reduce roughness. A substrate can be tilted at a tilt angle with respect to the direction of an incoming ion beam. Ions can be directionally implanted at the tilt angle, along sidewall surfaces of the developed resist pattern to trim roughness from the sidewall surfaces. After implanting, the substrate can be rotated along the axis normal to a surface, and ions can then be directionally implanted at the tilt angle along the sidewall surfaces to further trim roughness from the sidewall surfaces of the developed resist pattern. The directional ion implantation process can be performed over a number of iterations, and during each iteration of the directional ion implantation process, the tilt angle can be adjusted so that the tilt angle is different than during previous iterations.

Abstract: The present disclosure discloses an interactive method, an electronic device and a storage medium. In an embodiment, the method is applied to an electronic device including an interactive apparatus, and the method includes: receiving login request information and performing identity authentication; displaying information and/or at least one control corresponding to an authentication result; and displaying information corresponding to a control or executing a function corresponding to the control in response to an operation on the control.

Abstract: A method according to the present disclosure includes forming a bottom electrode layer over a substrate, forming an insulator layer over the bottom electrode layer, depositing a semiconductor layer over the bottom electrode layer, depositing a ferroelectric layer over the semiconductor layer, forming a top electrode layer over the ferroelectric layer, and patterning the bottom electrode layer, the insulator layer, the semiconductor layer, the ferroelectric layer, and the top electrode layer to form a memory stack. The semiconductor layer includes a plurality of portions with different thicknesses.

Abstract: The disclosure relates to a voice signal analysis method and device and a chip design method and device. The voice signal analysis method includes: in a first updating gradient, training a resolution recovery model by using first voice training data meeting a same grouping condition in multiple mission sets; in a second updating gradient, training the resolution recovery model by interleavingly using second voice training data meeting different grouping conditions in the mission sets; iteratively executing the first and second updating gradients to set an initial model parameter of the resolution recovery model; and recovering a high-resolution snore signal from a low-resolution snore signal by using the resolution recovery model. The low-resolution snore signal has a lower resolution than the high-resolution snore signal.

Abstract: An image adjusting method applied to an image adjusting device of a display panel includes applying content analysis to an original image, determining one related specific light power saving mode to reduce intensity of specific color of the original image in accordance with a result of the content analysis, and executing the related specific light power saving mode.

Abstract: An electronic device includes a substrate, an electrical component, a plurality of data lines, a plurality of fan-out lines and a multiplexer. The substrate includes an active area and a fan-out area. The electrical component is disposed in the active area. The data lines are disposed in the active area, and one of the data lines is coupled to the electrical component. The fan-out lines are disposed in the fan-out area. The multiplexer is disposed between the active area and the fan-out area, and is coupled to the one of the data lines and one of the fan-out lines. The electronic device has various refreshing frequencies and is configured to use the multiplexer to control the one of the data lines to receive a data signal through the one of the fan-out lines, and the electrical component displays a corresponding gray-level according to the data signal.

Abstract: Methods, systems, and devices for read window management in a memory system are described. A memory system may determine, for a set of memory cells, a first value for a read window that is associated with a set of one or more threshold voltages each representing a different multi-bit value. The memory system may then use the first value for the read window to predict a second value for the read window. Based on the second value for the read window, the memory system may predict an error rate for the set of memory cells. The memory system may then set a value for an offset for a threshold voltage of the set of one or more threshold voltages based on the error rate.

Abstract: A micro light-emitting diode (LED) display is provided. The micro LED display includes a panel, at least one first pixel, and a least one second pixel. The panel is provided with a first display area and a second display area. The first pixel is disposed on the first display area and including a first sub-pixel. The first pixel receives a first control signal. The second pixel which includes a plurality of second sub-pixels is arranged at the second display area and receiving a second control signal. Thereby the display with pixel variation is provided for lower power consumption and reduced manufacturing cost.

Abstract: Various embodiments of the present application are directed towards an integrated chip (IC). The IC comprises a trench capacitor overlying a substrate. The trench capacitor comprises a plurality of capacitor electrode structures, a plurality of warping reduction structures, and a plurality of capacitor dielectric structures. The plurality of capacitor electrode structures, the plurality of warping reduction structures, and the plurality of capacitor dielectric structures are alternatingly stacked and define a trench segment that extends vertically into the substrate. The plurality of capacitor electrode structures comprise a metal component and a nitrogen component. The plurality of warping reduction structures comprise the metal component, the nitrogen component, and an oxygen component.