Abstract: A display device includes a display area and a non-display area which is adjacent to the display area. The display device includes a display panel, and a cover window structure which is on the display panel. The cover window structure includes a cover window including a first surface facing the display panel, a second surface opposite to the first surface, and a third surface connecting the first surface with the second surface, and a first window protection layer on the cover window. The first window protection layer includes a first protection portion on the first surface of the cover window and a second protection portion on the third surface of the cover window, where the second protection portion is in the non-display area.

Abstract: Chemical entities that modulate PI3 kinase activity, pharmaceutical compositions containing the chemical entities, and methods of using these chemical entities for treating diseases and conditions associated with PI3 kinase activity are described herein.

Abstract: An electronic device includes a processor that executes one or more guest operating systems and an input-output memory management unit (IOMMU). The IOMMU accesses, for/on behalf of each guest operating system among the one or more guest operating systems, IOMMU memory-mapped input-output (MMIO) registers in a separate copy of a set of IOMMU MMIO registers for that guest operating system.

Abstract: The present invention measures a temperature of a heating element and includes a first insulating layer having an electrical insulating function; a sensor electrode provided on an upper side of the first insulating layer and having a change in intensity of a current according to a change in heat generated by the heating element; and a second insulating layer covering an upper side of the sensor electrode, wherein the sensor electrode is disposed in parallel with the first insulating layer and having a plurality of bent portions from one end of the sensor electrode to the other end of the sensor electrode.

Abstract: Methods and systems described herein may implement non-fungible tokens that implement a programmable grammar-based syntax in a variety of environments. In an embodiment, a first non-fungible token that implements a programmable grammar-based syntax standard and includes a first updatable programmable section is generated. The first non-fungible token includes at least one of first executable instructions or first data, and a first portion of the at least one of the first executable instructions or the first data is stored, according to the grammar-based syntax standard, in the first updatable programmable section. The first non-fungible token may then be stored at a first blockchain address on a blockchain, and the first portion of the at least one of the first executable instructions or the first data in the first updatable programmable section of the first non-fungible token is subsequently changed to at least one of second executable instructions or second data.

Abstract: An inverse design machine for making a manufactured article that includes a designer Impact-mitigating architectured isotropic structure includes: an input unit that receives a primary structure; a primary structure analyzer that receives the primary structure from the input unit and determines primary properties of the primary structure; a structure adjuster that receives the primary properties from the primary structure analyzer, receives impact-mitigating properties from a structural property manager, and produces the designer Impact-mitigating architectured isotropic structure from the impact-mitigating properties; and the structural property manager that provides the impact-mitigating properties to the structure adjuster.

Abstract: An optical device for coupling light propagating between a waveguide and an optical transmission component is provided. The optical device includes a taper portion and a grating portion. The taper portion is disposed between the grating portion and the waveguide. The grating portion includes rows of grating patterns. A first size of a first grating pattern in a first row of grating patterns is larger than a second size of a second grating pattern in a second row of grating patterns. A first distance between the first row of grating patterns and the waveguide is less than a second distance between the second row of grating patterns and the waveguide.

Abstract: A semiconductor arrangement is provided and includes a first dielectric layer over an optical device. A first metallization layer is over the first dielectric layer, and a first conductive line is in the first metallization layer. A first conductive via is in the first metallization layer and contacts the first conductive line. A second metallization layer is over the first metallization layer. A second conductive line is in the second metallization layer and contacts the first conductive via at a first interface. A heater is over the optical device and has a lowermost surface below the first interface and an uppermost surface above the first interface.

Abstract: A process of augmenting images of incident scenes with object descriptions retrieved from an audio stream. In operation, an electronic computing device detects an object of interest in an image captured corresponding to an incident scene and identifies an audio stream linked to an incident identifier of an incident that occurred at the incident scene. The electronic computing device then determines whether the audio stream contains an audio description of the detected object of interest. When it is determined that the audio stream contains the audio description of the detected object of interest, the electronic computing device generates a visual or audio prompt corresponding to the audio description of the detected object of interest and plays back the visual or audio prompt via a corresponding display or audio-output component communicatively coupled to the electronic computing device.

Abstract: An HEMT includes a gallium nitride layer. An aluminum gallium nitride layer is disposed on the gallium nitride layer. A gate is disposed on the aluminum gallium nitride layer. The gate includes a P-type gallium nitride and a schottky contact layer. The P-type gallium nitride contacts the schottky contact layer, and a top surface of the P-type gallium nitride entirely overlaps a bottom surface of the schottky contact layer. A protective layer covers the aluminum gallium nitride layer and the gate. A source electrode is disposed at one side of the gate, penetrates the protective layer and contacts the aluminum gallium nitride layer. A drain electrode is disposed at another side of the gate, penetrates the protective layer and contacts the aluminum gallium nitride layer. A gate electrode is disposed directly on the gate, penetrates the protective layer and contacts the schottky contact layer.

Abstract: A system and a method are disclosed for simulating asset transfers (e.g., sweeps) using a user interface generated by various collections of display routines. A sweep management system may generate a graphical user interface (GUI) on a webpage to simulate sweeps. The GUI may include a list of entities rendered using a first collection of display routines and a graphical representation of some of the entities rendered using a second collection of display routines. The graphical representation may be rendered using a shared webpage object. Furthermore, callback functions are executed to perform operations based on user interactions. For example, callback functions are used to update the graphical representation after a user has dragged and dropped an entry from the list into the graphical representation.

Abstract: A silicon ? silicon oxide-carbon complex has a core-shell structure in which the core comprises silicon particles, a silicon oxide compound represented by SiOx (0<×2), and magnesium silicate, and the shell forms a carbon coating, and has a specific range of conductivity, whereby the use of the complex as a negative electrode active material for a secondary battery can provide the secondary battery with an improvement in capacity as well as cycle characteristics and initial efficiency.

Abstract: A display device and a method of fabricating a display device. The display device includes a substrate including an emission area and a subarea adjacent to the emission area, a bank disposed in the emission area of the substrate, a height difference compensation pattern disposed in the subarea of the substrate, a first electrode and a second electrode that are disposed on the bank, the first electrode and the second electrode being spaced apart from each other, and a light-emitting element disposed in the emission area, between the first electrode and the second electrode.

Abstract: A method of forming a semiconductor device includes the following steps. First of all, a substrate is provided, and a dielectric layer is formed on the substrate. Then, at least one trench is formed in the dielectric layer, to partially expose a top surface of the substrate. The trench includes a discontinuous sidewall having a turning portion. Next, a first deposition process is performed, to deposit a first semiconductor layer to fill up the trench and to further cover on the top surface of the dielectric layer. Following these, the first semiconductor layer is laterally etched, to partially remove the first semiconductor layer till exposing the turning portion of the trench. Finally, a second deposition is performed, to deposit a second semiconductor layer to fill up the trench.

Abstract: The invention concerns a novel cardiac therapeutic effective against atrial fibrillation (AF); a pharmaceutical composition comprising same; the use of same to treat cardiac disease; and a method of treating cardiac disease involving the use of same.

Abstract: Systems, methods, and apparatuses can determine and use methylation profiles of various tissues and samples. Examples are provided. A methylation profile can be deduced for fetal/tumor tissue based on a comparison of plasma methylation (or other sample with cell-free DNA) to a methylation profile of the mother/patient. A methylation profile can be determined for fetal/tumor tissue using tissue-specific alleles to identify DNA from the fetus/tumor when the sample has a mixture of DNA. A methylation profile can be used to determine copy number variations in genome of a fetus/tumor. Methylation markers for a fetus have been identified via various techniques. The methylation profile can be determined by determining a size parameter of a size distribution of DNA fragments, where reference values for the size parameter can be used to determine methylation levels. Additionally, a methylation level can be used to determine a level of cancer.

Abstract: The present disclosure relates to a smart generator and, more particularly, to a smart generator in which two stators are used for a single rotor, the gap between an N-pole and an S-pole of the first and second stators is decreased, and a load that is an interference electromagnetic force affecting a rotor wire is minimized, whereby more power can be generated from a less force.

Abstract: An apparatus and method are disclosed for providing feedback for a steerable medical device assembly for deflecting a device, the assembly comprising a control handle comprising an actuation mechanism. The assembly additionally comprises a device coupled to the control handle and operable to be deflected upon actuation of the actuation mechanism, and a feedback mechanism for providing an indication of the deflection of the device, wherein the feedback mechanism is associated with the actuation mechanism for deflecting the device.

Abstract: Provided are an extreme ultraviolet (EUV) exposure apparatus for improving an overlay error in a EUV exposure process, and an overlay correction method and a semiconductor device fabricating method using the exposure apparatus. The EUV exposure apparatus includes an EUV light source; a first optical system configured to emit EUV light from the EUV light source to an EUV mask; a second optical system configured to emit EUV light reflected from the EUV mask to a wafer; a mask stage; a wafer stage; and a control unit configured to control the mask stage and the wafer stage, wherein, based on a correlation between a first overlay parameter, which is one of parameters of overlay errors between layers on the wafer, and a second overlay parameter, which is another parameter, the first overlay parameter is corrected through correction of the second overlay parameter.

Abstract: An embodiment of an electronic processing system may include an application processor, persistent storage media communicatively coupled to the application processor, a graphics subsystem communicatively coupled to the application processor, a power budget analyzer to identify a power budget for one or more of the application processor, the persistent storage media, and the graphics subsystem, a target analyzer communicatively coupled to the graphics subsystem to identify a target for the graphics subsystem, and a parameter adjuster to adjust one or more parameters of the graphics subsystem based on one or more of the identified power budget and the identified target.