Abstract: In an embodiment a method for producing a component having a carrier and at least one component part electrically conductively connected to the carrier and mechanically fixed to the carrier by an electrically insulating bonding layer includes providing the carrier having a connection layer, wherein the bonding layer is disposed on the carrier and has at least one opening, wherein a connection surface of the connection layer is exposed, and wherein the bonding layer projects vertically beyond the exposed connection surface or vice versa, applying the component part having a contact layer on the carrier in such that, in top view of the carrier, an exposed contact surface of the contact layer covers the opening and the connection surface located therein, wherein the exposed contact surface is spaced apart from the exposed connection surface by a vertical distance and reducing the vertical distance by changing a volume of the bonding layer such that the exposed contact surface and the exposed connection surface a

Abstract: In embodiments a method includes providing a functional semiconductor layer stack and depositing a first material on the surface, in particular a transition element oxide. A structured hard mask stack is deposited on the first material, wherein the structured hard mask stack includes a first layer and at least a second layer on the first layer with sidewalls of at least the first layer covered by a second material, wherein the second layer and the second material are resilient against a wet chemical etching process. Two anisotropic dry chemical etching processes and a wet etching process is performed to provide a deep mesa structure in the functional layer stack, wherein the second layer protects the first layer during the wet etching process.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The present invention concerns a method for deposition layers of an electronic device by slot-die deposition. Preferably, the method comprises slot-die deposition of formulation for providing compact inorganic layers, mesoporous inorganic layers, a carbon layer and a layer comprising organic-inorganic perovskite. In a preferred embodiment, the layers of a monolithic perovskite solar cell are entirely deposited by slot-die deposition. The method renders the manufacturing process of such electronic devices more efficient.

Abstract: The present invention concerns a method for producing layers of an electronic device and to a method for producing electronic devices. The method comprises co-firing a plurality of different overlapping or superposed films comprising metal oxides, precursors of the aforementioned and/or carbon, in addition to organic components. The method renders the manufacturing process of such electronic devices more efficient.

Abstract: The invention concerns a perovskite composition for a functional layer of an optoelectronic device, comprising an organic precursor of a metal-halide perovskite, an inorganic material, a matrix polymer, and at least one organic solvent. The invention also concerns an optoelectronic device, in which all functional layers may be inkjet-printed, and a method for producing the device.

Abstract: A mandrel is 3D-printed from a thermoplastic material that exhibits a glass transition. The mandrel has a mandrel wall made from the thermoplastic material and a cavity. The mandrel is coated with an elastomer coat and a fiber material is arranged on the elastomer coat. A composite part is formed from the fiber material by inserting the mandrel into a mold, pressurizing the mandrel, and heating the mold to a mold temperature greater than the glass transition temperature without melting the mandrel wall. The mandrel expands and presses the fiber material against the mold. The composite part is cured by increasing the mold temperature and simultaneously melting the mandrel wall.

Abstract: Optoelectronic components, groups of optoelectronic components, and methods for producing a component or a plurality of optoelectronic components are provided. The method may include providing a growth substrate having a buffer layer arranged thereon. The buffer layer may be structured in such a way that it has a plurality of the openings which are spaced apart from one another in lateral directions. A plurality of semiconductor bodies may be formed in the openings, wherein in the areas of the openings, the buffer layer has subregions which are arranged in a vertical direction between the growth substrate and the semiconductor bodies. The growth substrate may be detached from the semiconductor bodies. The buffer layer may be removed at least in the areas of the subregions.

Abstract: A method for sorting optoelectronic semiconductor components is specified. The semiconductor components each include an active region for emission or detection of electromagnetic radiation. The method includes the following steps: introducing the semiconductor components into a sorting region on a specified path; irradiating the optoelectronic semiconductor components with electromagnetic radiation of a first wavelength range to generate dipole moments by charge separation in the active regions of the optoelectronic semiconductor components; and deflecting the optoelectronic semiconductor components from the specified path as a function of their dipole moment by means of a non-homogeneous electromagnetic field. A device for sorting optoelectronic semiconductor components is further specified.

Abstract: In an embodiment a method for producing radiation-emitting semiconductor chips includes providing a semiconductor wafer, applying first contact layers on the semiconductor wafer, applying a second dielectric layer on the semiconductor wafer and the first contact layers, attaching a carrier arrangement to the semiconductor wafer, singulating the semiconductor wafer into semiconductor bodies and applying second contact layers on the semiconductor bodies, wherein the second dielectric layer is formed such that it mechanically stabilizes itself.

Abstract: In an embodiment, an optoelectronic semiconductor component includes a semiconductor layer sequence with a doped first layer, a doped second layer, an active zone configured to generate radiation by electroluminescence between the first layer and the second layer, and a side surface extending transversely to the active zone and delimiting the semiconductor layer sequence in a lateral direction, two electrodes for electrical contact between the first and second layers and a cover layer located on the side surface in a region of the first layer, wherein the cover layer is in direct contact with the first layer, wherein a material of the cover layer alone and its direct contact with the first layer are configured to cause a formation of a depletion zone in the first layer, wherein the depletion zone comprises a lower concentration of majority charge carriers compared to a rest of the first layer, wherein the cover layer comprises a metal or a metal compound, and wherein the cover layer forms a Schottky contact w

Abstract: Techniques are described for providing a method of creating and managing mappings between cloud based resources and cloud provider accounts. Specifically, the present disclosure presents a method executed by a centralized service for acquiring account credentials associated with a cloud provider account from a cloud provider. The centralized service is further configured to receive a request to allocate account credentials to a network resources. After receiving the request, the centralized service generates a mapping of the cloud provider account with the network resource based at least in part on the acquired account credentials of the cloud provider account. Finally, the centralized service returns the mapping based on the cloud provider account.

Abstract: A method of picking up and depositing optoelectronic semiconductor chips comprises generating electron-hole pairs in optoelectronic semiconductor chips, thereby generating a dipole electric field in the vicinity of the respective optoelectronic semiconductor chip, generating an electric field by a pick-up tool, and picking up the optoelectronic semiconductor chips during or after generation of the electron-hole pairs by the pick-up tool and depositing them at predetermined locations.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: An optoelectronic semiconductor component may include a semiconductor body having a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type, as well as a first surface and a second surface different from the first surface. The component may further include a first contact structure for electrically contacting the first semiconductor region and a second contact structure for electrically contacting the second semiconductor region. The first and second contact structures may each have a first connection region arranged on the first surface and a second connection region arranged on the second surface for electrically contacting the semiconductor component from the outside. The first and second connection regions of the first contact structure and the first and second connection regions of the second contact structure may each be designed to be rotationally symmetrical with respect to an axis of symmetry.