Abstract: Apparatus for trajectory control and/or position control of a missile (99), comprising a controllable gas generator (109, 200) with a fuel flow control valve (124, 213), an injector head (112, 202), a combustion chamber (111) and at least one outflow nozzle (103, 204) or at least one throttle.

Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a first semiconductor layer sequence having a plurality of microdiodes, and a second semiconductor layer sequence having an active region. The first semiconductor layer sequence and the second semiconductor layer sequence are based on a nitride compound semiconductor material, the first semiconductor layer sequence is before the first semiconductor layer sequence in the direction of growth, and the microdiodes form an ESD protection for the active region.

Abstract: A semiconductor chip includes a semiconductor body with a semiconductor layer sequence. An active region intended for generating radiation is arranged between an n-conductive multilayer structure and a p-conductive semiconductor layer. A doping profile is formed in the n-conductive multilayer structure which includes at least one doping peak.

Abstract: The invention is directed to an apparatus for finding a functional tissue area in a tissue region. The apparatus has a measurement illuminating device suitable for emitting measurement illumination to the tissue region and a camera which can capture light reflected by the tissue region. The camera has a green channel and/or a blue channel wherein there is a change in an optical property of the light reflected by the tissue region during the stimulation thereof which is undertaken at least intermittently. An evaluation unit captures the change in the optical property only by a signal of the green channel and/or of the blue channel of the camera. A display unit can display an output signal of the evaluation unit for the functional tissue area in the tissue region.

Abstract: A semiconductor chip includes a semiconductor body with a semiconductor layer sequence. An active region intended for generating radiation is arranged between an n-conductive multilayer structure and a p-conductive semiconductor layer. A doping profile is formed in the n-conductive multilayer structure which includes at least one doping peak.

Abstract: An optoelectronic semiconductor chip has a first semiconductor layer sequence which comprises a multiplicity of microdiodes, and a second semiconductor layer sequence which comprises an active region. The first semiconductor layer sequence and the second semiconductor layer sequence are based on a nitride compound semiconductor material, the first semiconductor layer sequence is before the first semiconductor layer sequence in the direction of growth, and the microdiodes form an ESD protection for the active region.

Abstract: An optoelectronic semiconductor component includes a layer sequence including a p-doped layer, an n-doped layer and an active zone that generates electromagnetic radiation arranged between the n-doped layer and the p-doped layer, wherein the n-doped layer includes at least GaN, an interlayer is arranged in the n-doped layer, wherein the interlayer includes AlxGa1-xN, wherein 0<x?1, and the interlayer includes magnesium.

Abstract: The invention concerns an optoelectronic component comprising a layer structure with a light-active layer. In a first lateral region the light-active layer has a higher density of V-defects than in a second lateral region.

Abstract: An optoelectronic component includes a semiconductor layer structure having a quantum film structure, and a p-doped layer arranged above the quantum film structure, wherein the p-doped layer includes at least one first partial layer and a second partial layer, and the second partial layer has a higher degree of doping than the first partial layer.

Abstract: A valve for a plumbing system has a housing with an inlet and an outlet and a valve body movable in the housing between a throttle position with a decreased a flow cross section and reduced flow between the inlet and outlet and an open position with a large flow cross section and free flow between the inlet and outlet. Structure in the valve body applies hydraulic pressure from the inlet or outlet to the valve body to shift same into the throttle position when a pressure differential between the inlet and the outlet exceeds a specified value and into the open position in the absence of a pressure differential between the inlet and the outlet.

Abstract: A bathwater circulating system has a pump operable to draw fluid in at an intake port and expel it under pressure at an output port. Water- and air-supply conduits feed water and air to the intake port at a rate determined by a flow-restricting air-intake valve so that the pump mixes the water and the air, pressurizes the mixture and thereby dissolves the air in the water, and expels the air/water mixture at the output port. A pressure-reducing valve is connected by an output conduit that extends from the output port to the pressure relief valve and conducts the water/air-bubble mixture from the pump to the pressure-reducing valve without separation of the air from the water and such that the mixture is at least partially depressurized at the pressure-reducing valve such that the air forms microbubbles in the water.

Abstract: An optoelectronic device includes a carrier on which a semiconductor layer sequence is applied, said semiconductor layer sequence including an n-doped semiconductor layer and a p-doped semiconductor layer such that a p-n junction is formed which includes an active zone that generates electromagnetic radiation, wherein at least one of the n-doped semiconductor layer and the p-doped semiconductor layer includes a doped region having a first doping concentration greater than a second doping concentration in a surrounding area of the region in the semiconductor layer including the region.

Abstract: A semiconductor chip includes a semiconductor body with a semiconductor layer sequence. An active region intended for generating radiation is arranged between an n-conductive multilayer structure and a p-conductive semiconductor layer. A doping profile is formed in the n-conductive multilayer structure which includes at least one doping peak.

Abstract: The invention concerns an optoelectronic component comprising a layer structure with a light-active layer. In a first lateral region the light-active layer has a higher density of V-defects than in a second lateral region.

Abstract: The semiconductor layer sequence includes an n-conductive layer, a p-conductive layer and an active zone located therebetween. The active zone comprises N quantum wells with N?2. At a first working point (W1) at a first current density, the quantum wells have a first emission wavelength and, at a second working point (W2) at a second current density, a second emission wavelength. At least two of the first emission wavelengths differ from one another and at least some of the second emission wavelengths differ from the first emission wavelengths. The first current density is smaller than the second current density and the current densities differ from one another at least by a factor of 2.

Abstract: A semiconductor chip includes a semiconductor body with a semiconductor layer sequence. An active region intended for generating radiation is arranged between an n-conductive multilayer structure and a p-conductive semiconductor layer. A doping profile is formed in the n-conductive multilayer structure which includes at least one doping peak.

Abstract: The invention concerns an optoelectronic component comprising a layer structure with a light-active layer. In a first lateral region the light-active layer has a higher density of V-defects than in a second lateral region.

Abstract: Described is an optoelectronic semiconductor chip (1) with a built-in bridging element (9, 9A) for overvoltage protection.

Abstract: A method is provided for producing an optoelectronic device, comprising the steps of providing a substrate, applying a nucleation layer on a surface of the substrate, applying and patterning a mask layer on the nucleation layer, growing a nitride semiconductor in a first growth step, wherein webs are laid which form a lateral lattice, wherein the webs have trapezoidal cross-sectional areas in places in the direction of growth, and laterally overgrowing the webs with a nitride semiconductor in a second growth step, to close spaces between the webs.

Abstract: A method is provided for a full-area optical characterization of an optoelectronic semiconductor material which is provided for producing a plurality of optoelectronic semiconductor chips and which has a band gap which specifies a characteristic wavelength of the semiconductor material. The method includes full-area irradiating a major surface of the optoelectronic semiconductor material with light having an excitation wavelength which is less than the characteristic wavelength of the semiconductor material, with the full-area irradiating generating electron-hole pairs in the semiconductor material. The method further includes full-area detecting a recombination radiation having the characteristic wavelength which is emitted as a result of recombination of the electron-hole pairs from the major surface of the semiconductor material. A device for carrying out the method is also provided.