Abstract: Form ethylene via a method that includes vaporizing elemental sulfur, providing a metal sulfide catalyst, and contacting the metal sulfide catalyst with a mixture of methane and the vaporized elemental sulfur to form ethylene. The mixture has a methane to sulfur molar ratio greater than 1.2:1.0.

Abstract: Form ethylene via a method that includes vaporizing elemental sulfur, providing a metal sulfide catalyst, and contacting the metal sulfide catalyst with a mixture of methane and the vaporized elemental sulfur to form ethylene. The mixture has a methane to sulfur molar ratio greater than 1.2:1.0.

Abstract: Transparent conducting oxide thin films having a reduced indium content and/or an increased tin content are provided. In addition, processes for producing the same, precursors for producing the same, and transparent electroconductive substrate for display panels and organic electroluminescence devices, both including the transparent conducting oxide thin films, are provided.

Abstract: Provided are mono- and diimide naphthalene compounds for use in the fabrication of various device structures. In some embodiments, the naphthalene core of these compounds are mono-, di-, or tetra-substituted with cyano group(s) or other electron-withdrawing substituents or moieties. Such mono- and diimide naphthalene compounds also can be optionally N-substituted.

Abstract: Inorganic semiconducting compounds, composites and compositions thereof, and related device structures.

Abstract: Field effect transistor devices comprising III-V semiconductors and organic gate dielectric materials, such dielectric materials as can afford flexibility in device design and fabrication.

Abstract: The present teachings provide silole-based polymers that can be used as p-type semiconductors. More specifically, the present teachings provide polymers that include a repeating unit of Formula I: wherein R1, R2, R3, R4, R5, R6, Z, x, and x? are as defined herein. The present teachings also provide methods of preparing these polymers, and relate to various compositions, composites, and devices that incorporate these polymers.

Abstract: New electro-optic (EO) phase modulator devices and geometries, as can be constructed using a transparent conductive component.

Abstract: Organic light-emitting diodes (OLEDs) comprising at least one nanostructure-film electrode, and fabrication methods thereof are discussed. The nanostructure-film is preferably transparent, and may be deposited on a preferably-transparent substrate using a variety of techniques. A different material may be used to planarize the nanostructure-film and/or otherwise improve OLED performance.

Abstract: Compositions, methods of using inorganic moieties for dielectric modulation, and related device structures.

Abstract: New organic light-emitting diodes and related electroluminescent devices and methods for fabrication, using siloxane self-assembly techniques.

Abstract: Unconventional twisted ?-electron system electro-optic (EO) chromophores/compounds, compositions and related device structures. Crystallographic analysis of several non-limiting chromophores reveals, for instance, large ring-ring dihedral twist angles and a highly charge-separated zwitterionic structure in the ground state, in both solution phase and solid-state.

Abstract: Dielectric compositions comprising siloxane and polymeric components, as can be used in a range of transistor and related device configurations.

Abstract: Carbonyl-functionalized oligo/polythiophene compounds, and related semiconductor components and related device structures.

Abstract: The new fluorocarbon-functionalized and/or heterocycle-modified polythiophenes, in particular, ?,?-diperfluorohexylsexithiophene DFH-6T can be straightforwardly prepared in high yield and purity. Introduction of such modifications to a thiophene core affords enhanced thermal stability and volatility, and increased electron affinity versus the unmodified compositions of the prior art. Evaporated films behave as n-type semiconductors, and can be used to fabricate thin film transistors with FET mobilities ˜0.01 cm2/Vs—some of the highest reported to date for n-type organic semiconductors.

Abstract: The preparation of robust, thin film materials with large second-order optical nonlinearities through the covalent self-assembly of chromophoric compositions and innovative use of silyl chemistry.

Abstract: New organic light-emitting diodes and related electroluminescent devices and methods for fabrication, using siloxane self-assembly techniques.

Abstract: New organic light-emitting diodes and related hole transport compounds and methods for fabrication, using siloxane self-assembly techniques.

Abstract: A catalyst system useful to polymerize and co-polymerize polar and non-polar olefin monomers is formed by in situ reduction with a reducing agent of a catalyst precursor comprising {Cp*MRR?n}+{A}? wherein Cp* is a cyclopentadienyl or substituted cyclopentadienyl moiety; M is an early transition metal; R is a C1-C20 hydrocarbyl; R? are independently selected from hydride, C1-C20 hydrocarbyl, SiR?3, NR?2, OR?, SR?, GeR?3, SnR?3, and C?C groups (R?=C1-C10 hydrocarbyl); n is an integer selected to balance the oxidation state of M; and A is a suitable non-coordinating anionic cocatalyst or precursor. This catalyst system may form stereoregular olefin polymers including syndiotactic polymers of styrene and methylmethacrylate and isotactic copolymers of polar and nonpolar olefin monomers such as methylmethacrylate and styrene.

Abstract: Mono- and diimide perylene and naphthalene compounds, N- and core-substituted with electron-withdrawing groups, for use in the fabrication of various device structures.