Patents by Inventor Tobin Marks

Tobin Marks has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20050158579
    Abstract: New organic light-emitting diodes and related electroluminescent devices and methods for fabrication, using siloxane self-assembly techniques.
    Type: Application
    Filed: March 14, 2003
    Publication date: July 21, 2005
    Inventors: Tobin Marks, Qinglan Huang, Ji Cui, Jonathan Veinot, He Yan
  • Publication number: 20050147846
    Abstract: Hole transport layer compositions comprising a silylated aryl amine and a polymeric component, to enhance performance of an associated electroluminescent device.
    Type: Application
    Filed: December 10, 2004
    Publication date: July 7, 2005
    Inventors: Tobin Marks, He Yan, Qinglan Huang
  • Publication number: 20050127337
    Abstract: The present invention introduces a novel route toward microstructural orientation into organic films, using multiple hydrogen-bonding to self-assemble chromophore molecules into electro-optic films in a net polar orientation. High-quality, thick films (up to micrometers) with molecular net dipole orientations can be fabricated under vacuum in hours. The film microstructure is intrinsically acentric; and the orientation is robust.
    Type: Application
    Filed: February 27, 2004
    Publication date: June 16, 2005
    Inventors: Tobin Marks, Peiwang Zhu
  • Publication number: 20050119440
    Abstract: The new fluorocarbon-functionalized and/or heterocycle-modified polythiophenes, in particular, ?,?-diperfluorohexylsexithiophene DFH-6T can be straightforwardly prepared in high yield and purity. Introduction of such modifications to a thiophene core affords enhanced thermal stability and volatility, and increased electron affinity versus the unmodified compositions of the prior art. Evaporated films behave as n-type semiconductors, and can be used to fabricate thin film transistors with FET mobilities ˜0.01 cm2/Vs—some of the highest reported to date for n-type organic semiconductors.
    Type: Application
    Filed: June 30, 2003
    Publication date: June 2, 2005
    Inventors: Tobin Marks, Antonio Facchetti