Patents by Inventor Todd C. Roggenbauer
Todd C. Roggenbauer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20080191275Abstract: A improved MOSFET (50, 51, 75, 215) has a source (60) and drain (62) in a semiconductor body (56), surmounted by an insulated control gate (66) located over the body (56) between the source (60) and drain (62) and adapted to control a conductive channel (55) extending between the source (60) and drain (62). The insulated gate (66) is perforated by a series of openings (61) through which highly doped regions (69) in the form of a series of (e.g., square) dots (69) of the same conductivity type as the body (56) are provided, located in the channel (55), spaced apart from each other and from the source (60) and drain (62). These channel dots (69) are desirably electrically coupled to a highly doped contact (64) to the body (56). The resulting device (50, 51, 75, 215) has a greater SOA, higher breakdown voltage and higher HBM stress resistance than equivalent prior art devices (20) without the dotted channel. Threshold voltage is not affected.Type: ApplicationFiled: February 14, 2007Publication date: August 14, 2008Applicant: FREESCALE SEMICONDUCTOR, INC.Inventors: Vishnu K. Khemka, Amitava Bose, Todd C. Roggenbauer, Ronghua Zhu
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Publication number: 20080191305Abstract: A low leakage bipolar Schottky diode (20, 40, 87) is formed by parallel lightly doped N (32, 52, 103) and P (22, 42, 100) regions adapted to form superjunction regions. First ends of the P regions (22, 42, 100) are terminated by P+ layers (21, 41, 121) and second, opposed ends of the N regions (32, 52, 103) are terminated by N+ layers (31, 51, 131). Silicide layers (24, 34, 44, 54, 134, 124) are provided in contact with both ends of the parallel N and P regions (22, 32, 42, 52, 100, 103), thereby forming at the first end ohmic contacts (28, 48) with the P+ regions (21, 41, 121) and Schottky contacts (37, 57) with the N regions 32, 52, 103) and at the second, opposite end, ohmic contacts (38, 58) with the N+ regions (31, 51, 131) and Schottky contacts (27, 47) with the P regions (22, 42, 100). When forward biased current flows in both N (32, 52) and P (22, 42) regions thereby reducing the forward drop.Type: ApplicationFiled: February 14, 2007Publication date: August 14, 2008Applicant: FREESCALE SEMICONDUCTOR, INC.Inventors: Vishnu K. Khemka, Amitava Bose, Todd C. Roggenbauer, Ronghua Zhu
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Patent number: 7405128Abstract: A improved MOSFET (50, 51, 75, 215) has a source (60) and drain (62) in a semiconductor body (56), surmounted by an insulated control gate (66) located over the body (56) between the source (60) and drain (62) and adapted to control a conductive channel (55) extending between the source (60) and drain (62). The insulated gate (66) is perforated by a series of openings (61) through which highly doped regions (69) in the form of a series of (e.g., square) dots (69) of the same conductivity type as the body (56) are provided, located in the channel (55), spaced apart from each other and from the source (60) and drain (62). These channel dots (69) are desirably electrically coupled to a highly doped contact (64) to the body (56). The resulting device (50, 51, 75, 215) has a greater SOA, higher breakdown voltage and higher HBM stress resistance than equivalent prior art devices (20) without the dotted channel. Threshold voltage is not affected.Type: GrantFiled: February 14, 2007Date of Patent: July 29, 2008Assignee: Freescale Semiconductor, Inc.Inventors: Vishnu K. Khemka, Amitava Bose, Todd C. Roggenbauer, Ronghua Zhu
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Publication number: 20080122025Abstract: An electronic device can include a substrate, a buried insulating layer overlying the substrate, and a semiconductor layer overlying the buried insulating layer, wherein the semiconductor layer is substantially monocrystalline. The electronic device can also include a conductive structure extending through the semiconductor layer and buried insulating layer and abutting the substrate, and an insulating spacer lying between the conductive structure and each of the semiconductor layer and the buried insulating layer.Type: ApplicationFiled: November 3, 2006Publication date: May 29, 2008Applicant: FREESCALE SEMICONDUCTOR, INC.Inventors: Todd C. Roggenbauer, Vishnu K. Khemka, Ronghua Zhu, Amitava Bose, Paul Hui, Xiaoqiu Huang
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Publication number: 20080124889Abstract: A process of forming an electronic device can include providing a semiconductor-on-insulator substrate including a substrate, a first semiconductor layer, and a buried insulating layer lying between the first semiconductor layer and the substrate. The process can also include forming a field isolation region within the semiconductor layer, and forming an opening extending through the semiconductor layer and the buried insulating layer to expose the substrate. The process can further include forming a conductive structure within the opening, wherein the conductive structure abuts the substrate.Type: ApplicationFiled: November 3, 2006Publication date: May 29, 2008Applicant: FREESCALE SEMICONDUCTOR, INC.Inventors: Todd C. ROGGENBAUER, Vishnu K. KHEMKA, Ronghua ZHU, Amitava BOSE, Paul HUI, Xiaoqiu HUANG, Van WONG
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Publication number: 20080113498Abstract: Methods and apparatus are provided for semiconductor device (60, 95, 100, 106). The semiconductor device (60, 95, 100, 106), comprises a first region (64, 70) of a first conductivity type extending to a first surface (80), a second region (66) of a second, opposite, conductivity type forming with the first region (70) a first PN junction (65) extending to the first surface (80), a contact region (68) of the second conductivity type in the second region (66) at the first surface (80) and spaced apart from the first PN junction (65) by a first distance (LDS), and a third region (82, 96-98, 108) of the first conductivity type and of a second length (LBR), underlying the second region (66) and forming a second PN junction (63) therewith spaced apart from the first surface (80) and located closer to the first PN junction (65) than to the contact region (68). The breakdown voltage is enhanced without degrading other useful properties of the device (60, 95, 100, 106).Type: ApplicationFiled: November 15, 2006Publication date: May 15, 2008Inventors: Vishnu K. Khemka, Amitava Bose, Todd C. Roggenbauer, Ronghua Zhu
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Publication number: 20080079122Abstract: A semiconductor device 10 is provided. A first layer 12 has a first dopant type; a second layer 14 is provided over the first layer 12; and a third layer 16 is provided over the second layer and has the first dopant type. A plurality of first and second semiconductor regions 22, 24 are within the third layer. The first semiconductor region 22 has the first dopant type, and the second semiconductor region 24 has the second dopant type. The first and second semiconductor regions 22, 24 are disposed laterally to one another in an alternating pattern to form a super junction, and the super junction terminates with a final second semiconductor region 24, 24? of the second dopant type.Type: ApplicationFiled: September 29, 2006Publication date: April 3, 2008Inventors: Ronghua Zhu, Amitava Bose, Vishnu K. Khemka, Todd C. Roggenbauer
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Patent number: 7309638Abstract: A semiconductor component comprises a first semiconductor region (110, 310), a second semiconductor region (120, 320) above the first semiconductor region, a third semiconductor region (130, 330) above the second semiconductor region, a fourth semiconductor region (140, 340) above the third semiconductor region, a fifth semiconductor region (150, 350) above the second semiconductor region and at least partially contiguous with the fourth semiconductor region, a sixth semiconductor region (160, 360) above and electrically shorted to the fifth semiconductor region, and an electrically insulating layer (180, 380) above the fourth semiconductor region and the fifth semiconductor region. A junction (145, 345) between the fourth semiconductor region and the fifth semiconductor region forms a zener diode junction, which is located only underneath the electrically insulating layer. In one embodiment, a seventh semiconductor region (170) circumscribes the third, fourth, fifth, and sixth semiconductor regions.Type: GrantFiled: July 14, 2005Date of Patent: December 18, 2007Assignee: Freescale Semiconductor, Inc.Inventors: Vishnu Khemka, Vijay Parthasarathy, Ronghua Zhu, Amitava Bose, Todd C. Roggenbauer
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Patent number: 6933546Abstract: A semiconductor component comprises a first semiconductor region (110, 310), a second semiconductor region (120, 320) above the first semiconductor region, a third semiconductor region (130, 330) above the second semiconductor region, a fourth semiconductor region (140, 340) above the third semiconductor region, a fifth semiconductor region (150, 350) above the second semiconductor region and at least partially contiguous with the fourth semiconductor region, a sixth semiconductor region (160, 360) above and electrically shorted to the fifth semiconductor region, and an electrically insulating layer (180, 380) above the fourth semiconductor region and the fifth semiconductor region. A junction (145, 345) between the fourth semiconductor region and the fifth semiconductor region forms a zener diode junction, which is located only underneath the electrically insulating layer. In one embodiment, a seventh semiconductor region (170) circumscribes the third, fourth, fifth, and sixth semiconductor regions.Type: GrantFiled: March 17, 2003Date of Patent: August 23, 2005Assignee: Freescale Semiconductor, Inc.Inventors: Vishnu Khemka, Vijay Parthasarathy, Ronghua Zhu, Amitava Bose, Todd C. Roggenbauer
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Patent number: 6815780Abstract: A semiconductor component includes a semiconductor substrate (210) having a first conductivity type, a semiconductor epitaxial layer (220) having the first conductivity type located over the semiconductor substrate, a first semiconductor device (110) and a second semiconductor device (130) located in the semiconductor epitaxial layer and including, respectively, a first semiconductor region (120) and a second semiconductor region (140), both having the second conductivity type, an ohmic contact region (150) in the semiconductor epitaxial layer having the first conductivity type and located between the first and second semiconductor devices, and at least one electrically insulating trench (160, 360) located in the semiconductor epitaxial layer and circumscribing at least the first semiconductor device. The semiconductor epitaxial layer has a doping concentration lower than a doping concentration of the semiconductor substrate.Type: GrantFiled: April 15, 2003Date of Patent: November 9, 2004Assignee: Motorola, Inc.Inventors: Vishnu Khemka, Vijay Parthasarathy, Ronghua Zhu, Amitava Bose, Todd C. Roggenbauer
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Publication number: 20040207047Abstract: A semiconductor component includes a semiconductor substrate (210) having a first conductivity type, a semiconductor epitaxial layer (220) having the first conductivity type located over the semiconductor substrate, a first semiconductor device (110) and a second semiconductor device (130) located in the semiconductor epitaxial layer and including, respectively, a first semiconductor region (120) and a second semiconductor region (140), both having the second conductivity type, an ohmic contact region (150) in the semiconductor epitaxial layer having the first conductivity type and located between the first and second semiconductor devices, and at least one electrically insulating trench (160, 360) located in the semiconductor epitaxial layer and circumscribing at least the first semiconductor device. The semiconductor epitaxial layer has a doping concentration lower than a doping concentration of the semiconductor substrate.Type: ApplicationFiled: April 15, 2003Publication date: October 21, 2004Applicant: Motorola, Inc.Inventors: Vishnu Khemka, Vijay Parthasarathy, Ronghua Zhu, Amitava Bose, Todd C. Roggenbauer
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Publication number: 20040183098Abstract: A semiconductor component comprises a first semiconductor region (110, 310), a second semiconductor region (120, 320) above the first semiconductor region, a third semiconductor region (130, 330) above the second semiconductor region, a fourth semiconductor region (140, 340) above the third semiconductor region, a fifth semiconductor region (150, 350) above the second semiconductor region and at least partially contiguous with the fourth semiconductor region, a sixth semiconductor region (160, 360) above and electrically shorted to the fifth semiconductor region, and an electrically insulating layer (180, 380) above the fourth semiconductor region and the fifth semiconductor region. A junction (145, 345) between the fourth semiconductor region and the fifth semiconductor region forms a zener diode junction, which is located only underneath the electrically insulating layer. In one embodiment, a seventh semiconductor region (170) circumscribes the third, fourth, fifth, and sixth semiconductor regions.Type: ApplicationFiled: March 17, 2003Publication date: September 23, 2004Applicant: Motorola, Inc.Inventors: Vishnu Khemka, Vijay Parthasarathy, Ronghua Zhu, Amitava Bose, Todd C. Roggenbauer