Abstract: Various embodiments of the present technology may provide methods and apparatus for cleaning a source vessel. The source vessel may be filled or partially filled with a solvent to form a solution. The solution is removed from the source vessel and contained in a waste vessel that is connected to the source vessel. The waste vessel may have a bellow or other mechanism inside of it to create a negative pressure in the waste vessel to pull the solution out of the source vessel and into the waste vessel. Alternatively, a liquid pump may be used to pull the solution from the source vessel to the waste vessel.

Abstract: Various embodiments of the present technology may provide methods and apparatus for cleaning a source vessel. The source vessel may be filled or partially filled with a solvent to form a solution. The solution is removed from the source vessel and contained in a waste vessel that is connected to the source vessel. The waste vessel may have a bellow or other mechanism inside of it to create a negative pressure in the waste vessel to pull the solution out of the source vessel and into the waste vessel. Alternatively, a liquid pump may be used to pull the solution from the source vessel to the waste vessel.

Abstract: A semiconductor processing apparatus is disclosed. The apparatus may include a multiple chamber module comprising at least a first reaction chamber and a second reaction chamber, and a first substrate support structure disposed within the first reaction chamber and a second substrate support structure disposed within the second reaction chamber. The apparatus may also include a wafer handling chamber comprising a transfer robot configured for transferring two or more substrates along a first transfer path between the wafer handling chamber and the first substrate support structure and a second transfer path between the wafer handling chamber and the second substrate support structure. The apparatus may also include at least a first pyrometer and a second pyrometer, wherein a first optical path of the first pyrometer intersects the first transfer path and a second optical path of the second pyrometer intersect the second transfer path.

Abstract: Various embodiments of the present technology may provide methods and apparatus for cleaning a source vessel. The source vessel may be filled or partially filled with a solvent to form a solution. The solution is removed from the source vessel and contained in a waste vessel that is connected to the source vessel. The waste vessel may have a bellow or other mechanism inside of it to create a negative pressure in the waste vessel to pull the solution out of the source vessel and into the waste vessel. Alternatively, a liquid pump may be used to pull the solution from the source vessel to the waste vessel.

Abstract: Various embodiments of the present technology may provide an apparatus for use within a reaction chamber. The apparatus includes a susceptor plate having through-holes for which lift pins may be disposed therein. In addition, the susceptor may include an electrostatic chucking function. The susceptor may also include a metal interconnect that is electrically connected to other metal interconnects with a brazing material.

Abstract: A heater assembly having a laminate heater plate and a shaft. The laminate heater plate is formed from a plurality of layers, wherein one or more layers may comprise one or more of a heating element, an RF electrode, a cooling channel, and an RTD sensor.

Abstract: A semiconductor processing apparatus is disclosed. The apparatus may include a multiple chamber module comprising at least a first reaction chamber and a second reaction chamber, and a first substrate support structure disposed within the first reaction chamber and a second substrate support structure disposed within the second reaction chamber. The apparatus may also include a wafer handling chamber comprising a transfer robot configured for transferring two or more substrates along a first transfer path between the wafer handling chamber and the first substrate support structure and a second transfer path between the wafer handling chamber and the second substrate support structure. The apparatus may also include at least a first pyrometer and a second pyrometer, wherein a first optical path of the first pyrometer intersects the first transfer path and a second optical path of the second pyrometer intersect the second transfer path.

Abstract: A source vessel weight monitoring assembly for use in reactor systems to provide real-time and direct measurements of the availability of source or process materials from a source vessel. The assembly includes one or more force or load sensors, such as load cells, positioned between a bottom wall of the source vessel and a support element for the vessel (e.g., a base of a source vessel enclosure). The sensors are positioned to at least partially support the vessel, and a signal conditioning element processes the output electrical signals from the sensors, then a controller processes the output signals from the signal conditioning components with a conversion factor, for example, to determine a current weight of the source vessel and process material (e.g., solid, liquid, or gaseous precursor) stored therein. The controller uses this weight to calculate the amount of available process material or chemistry in the source vessel.

Abstract: Apparatus and method for semiconductor substrate processing are presented. For devices such as valves used for semiconductor substrate processing especially a process like ALD, there is a need to monitor and control the exact time taken from the signal to open and close the valves so that delay times may be controlled. In an embodiment, an apparatus comprising a reactor, a valve, a process controller and a valve monitor system is presented. The process controller may be operationally connected to the valve and may be provided with a memory. The sensors may be either electrical or optical sensors.

Abstract: Herein disclosed are systems and methods related to remote delivery systems using solid source chemical bulk fill vessels. The delivery system can include a vapor deposition reactor, two or more bulk fill vessels remote from the vapor deposition reactor, an interconnect line, a line heater, and a gas panel comprising one or more valves. Each bulk fill vessel is configured to hold solid source chemical reactant therein. The bulk fill vessels can each include fluid outlets. The interconnect line can fluidly connect the vapor deposition reactor with each bulk fill vessel. The line heater can heat at least a portion of the interconnect line to at least a minimum line temperature. The one or more valves of the gas panel can switch a flow of vaporized chemical reactant through the interconnect line from being from one fluid outlet to being from another fluid outlet.

Abstract: A semiconductor processing apparatus is disclosed. The apparatus may include a multiple chamber module comprising at least a first reaction chamber and a second reaction chamber, and a first substrate support structure disposed within the first reaction chamber and a second substrate support structure disposed within the second reaction chamber. The apparatus may also include a wafer handling chamber comprising a transfer robot configured for transferring two or more substrates along a first transfer path between the wafer handling chamber and the first substrate support structure and a second transfer path between the wafer handling chamber and the second substrate support structure. The apparatus may also include at least a first pyrometer and a second pyrometer, wherein a first optical path of the first pyrometer intersects the first transfer path and a second optical path of the second pyrometer intersect the second transfer path.

Abstract: Gas-phase reactor systems and methods of cleaning same are disclosed. Exemplary systems include a cleaning gas diffuser within a reaction chamber to facilitate cleaning of components, such as a susceptor, within the reaction chamber. The cleaning gas diffuser can be configured to provide a flow of a cleaning reactant over one or more surfaces within the reaction chamber.

Abstract: Reactor systems and methods for forming a layer comprising indium gallium zinc oxide are disclosed. The layer comprising indium gallium zinc oxide can be formed using one or more reaction chambers of a process module.

Abstract: A showerhead including a body having an opening, a first plate positioned within the opening and having a plurality of slots, a second plate positioned within the opening and having a plurality of slots, and wherein each of the first plate plurality of slots are concentrically aligned with the second plate plurality of slots.

Abstract: Embodiments related to managing the process feed conditions for a semiconductor process module are provided. In one example, a gas channel plate for a semiconductor process module is provided. The example gas channel plate includes a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps. The example gas channel plate also includes a heat exchange fluid director plate support surface for supporting a heat exchange fluid director plate above the plurality of heat exchange structures so that at least a portion of the plurality of heat exchange structures are spaced from the heat exchange fluid director plate.

Abstract: A showerhead including a body having an opening, a first plate positioned within the opening and having a plurality of slots, a second plate positioned within the opening and having a plurality of slots, and wherein each of the first plate plurality of slots are concentrically aligned with the second plate plurality of slots.

Abstract: A showerhead including a body having an opening, a first plate positioned within the opening and having a plurality of slots, a second plate positioned within the opening and having a plurality of slots, and wherein each of the first plate plurality of slots are concentrically aligned with the second plate plurality of slots.

Abstract: A semiconductor processing apparatus is disclosed. The apparatus may include a multiple chamber module comprising at least a first reaction chamber and a second reaction chamber, and a first substrate support structure disposed within the first reaction chamber and a second substrate support structure disposed within the second reaction chamber. The apparatus may also include a wafer handling chamber comprising a transfer robot configured for transferring two or more substrates along a first transfer path between the wafer handling chamber and the first substrate support structure and a second transfer path between the wafer handling chamber and the second substrate support structure. The apparatus may also include at least a first pyrometer and a second pyrometer, wherein a first optical path of the first pyrometer intersects the first transfer path and a second optical path of the second pyrometer intersect the second transfer path.