Abstract: Rewriteable electronic fuses include latches and/or logic gates coupled to one or more nonvolatile memory elements. The nonvolatile memory elements are configured to be programmed to memory values capable of causing associated electronic circuits to settle to predetermined states as power-up or reset signals are applied to the fuses. Although not required, the nonvolatile memory elements used in the rewriteable electronic fuses may comprise floating-gate transistors. An amount of charge stored on the floating gate of a given floating-gate transistor determines the memory value and, consequently, the state to which a fuse settles upon power-up or reset of the fuse.

Abstract: Methods and apparatuses for programming a single-poly pFET-based nonvolatile memory cell bias the cell so that band-to-band tunneling (BTBT) is induced and electrons generated by the BTBT are injected onto a floating gate of the cell. Following a predetermined event, the single-poly pFET is biased to induce impact-ionized hot-electron injection (IHEI). The predetermined event may be, for example, the expiration of a predetermined time period or a determination that a channel has been formed by the BTBT injection process that is sufficiently conducting to support IHEI. Employing BTBT permits a previously overerased or stuck bit to be “unstuck” or “removed” and thus be made usable (i.e., able to be programmed) again.

Abstract: According to one aspect of the present invention, there is provided a method of calibrating an oscillator within a radio-frequency identification (RFID) circuit for use in an RFID tag. A plurality of calibration values is stored within a memory structure associated with the RFID circuit. Each of the calibration values corresponds to a respective oscillation frequency of the oscillator. A selected calibration value is selected from the plurality of calibration values stored within the memory structure, according to a first selection criterion. The oscillator is then calibrated in accordance with the selected calibration value.

Abstract: An autozeroing floating-gate amplifier (AFGA) is implemented utilizing a programmable gain element, the characteristics of which may be changed by changing the amount of charge stored on a floating gate device.

Abstract: Hot-electron injection driven by hole impact ionization in the channel-to-drain junction of a p-channel MOSFET provides a new mechanism for writing a floating-gate memory. Various pFET floating-gate structures use a combination of this mechanism and electron tunneling to implement nonvolatile analog memory, nonvolatile digital memory, or on-line learning in silicon. The memory is nonvolatile because the devices use electrically isolated floating gates to store electronic charge. The devices enable on-line learning because the electron injection and tunneling mechanisms that write the memory can occur during normal device operation. The memory updates and learning are bidirectional because the injection and tunneling mechanisms add and remove electrons from the floating gate, respectively. Because the memory updates depend on both the stored memory and the pFETs terminal voltages, and because they are bidirectional, the devices can implement on-line learning functions.

Abstract: Analog-valued floating-gate transistors are used as trimmable circuit components for modifying and/or controlling the gain, phase, offset, frequency response, current consumption, and/or transfer function of signal pathways in parallel and/or serial processing circuits in radio frequency, analog, or mixed-signal integrated circuits.

Abstract: Methods of and apparatuses for matching the signal delay, clock timing, frequency response, gain, offset, and/or transfer function of signal pathways in electrical circuits such as, for example, time-interleaved and pipelined circuits using analog-valued floating-gate MOSFETs are disclosed. The methods and apparatuses disclosed are applicable to a variety of circuits, including but not limited to, sample-and-hold or track-and-hold circuits, quadrature mixers, analog-to-digital converters (ADCs), digital-to-analog converters (DACs), analog or digital filters, and amplifiers.

Abstract: Analog-valued floating-gate transistors are used as trimmable circuit components for modifying and/or controlling the gain, phase, offset, frequency response, current consumption, and/or transfer function of signal pathways in parallel and/or serial processing circuits in radio frequency, analog, or mixed-signal integrated circuits.

Abstract: Analog-valued floating-gate transistors are used as trimmable circuit components for modifying and/or controlling the gain, phase, offset, frequency response, current consumption, and/or transfer function of signal pathways in parallel and/or serial processing circuits in radio frequency, analog, or mixed-signal integrated circuits.

Abstract: Hot-electron injection driven by hole impact ionization in the channel-to-drain junction of a p-channel MOSFET provides a new mechanism for writing a floating-gate memory. Various pFET floating-gate structures use a combination of this mechanism and electron tunneling to implement nonvolatile analog memory, nonvolatile digital memory, or on-line learning in silicon. The memory is nonvolatile because the devices use electrically isolated floating gates to store electronic charge. The devices enable on-line learning because the electron injection and tunneling mechanisms that write the memory can occur during normal device operation. The memory updates and learning are bidirectional because the injection and tunneling mechanisms add and remove electrons from the floating gate, respectively. Because the memory updates depend on both the stored memory and the pFETs terminal voltages, and because they are bidirectional, the devices can implement on-line learning functions.

Abstract: An autozeroing floating-gate amplifier (AFGA) is implemented utilizing a programmable gain element, the characteristics of which may be changed by changing the amount of charge stored on a floating gate device.

Abstract: A communication system and more particularly to a variable rate differential phase shift keying (DPSK) communication system with minimal hardware that does not have power or performance penalties associated with known DPSK modulation systems is disclosed. The DPSK modulation system in accordance with the present invention includes a transmitter, which includes a carrier signal source, a phase modulator and a DPSK encoder for modulating a carrier signal. The modulated carrier signals may be amplified, for example, in optical communication systems by a rare earth element doped fiber amplifier. The signals are continuously transmitted to a multi-rate receiver through a communication channel, for example, free space. The multi-rate receiver includes a single demodulator, for example, a single optical interferometer, used for multiple integer sub-harmonic data rates which demodulates the modulated signal.

Abstract: Fast switching and fast settling is achieved in a phase locked loop (“PLL”) containing a bandwidth switched active loop filter (8) by feeding the phase error signal of the phase detector (1) of the PLL to the non-inverting input of the amplifier (7) within the loop filter and having the electronic switch (17) control the loop filter bandwidth through changing the resistance (9, 11) to ground at the inverting input of the amplifier between a high and low value associated respectively with broad bandwidth and narrow bandwidth to the loop filter. Switching is possible in as little as one microsecond, and is accompanied by fast settling of the loop with minimal generation of phase/frequency perturbation. The foregoing PLL is of particular benefit in fast switching frequency synthesizers, such as used in frequency hopping frequency synthesizers of frequency and time division multiplexing systems.

Abstract: Methods of and apparatuses for matching the signal delay, clock timing, frequency response, gain, offset, and/or transfer function of signal pathways in electrical circuits such as, for example, time-interleaved and pipelined circuits using analog-valued floating-gate MOSFETs are disclosed. The methods and apparatuses disclosed are applicable to a variety of circuits, including but not limited to, sample-and-hold or track-and-hold circuits, quadrature mixers, analog-to-digital converters (ADCs), digital-to-analog converters (DACs), analog or digital filters, and amplifiers.

Abstract: A semiconductor device is provided that uses a floating gate to store analog- and digital-valued information for periods of time measured in milliseconds to hours. Charge is added to and/or removed from the floating gate by means of direct electron tunneling through the surrounding insulator, with the insulator typically being thin enough such that appreciable tunneling occurs with an insulator voltage smaller than the difference in electron affinities between the semiconductor and the insulator and/or between the floating gate and the insulator. The stored information is refreshed or updated as needed. In many applications, the stored information can be refreshed without interrupting normal circuit operation. Adding and removing charge to or from the floating gate may be performed using separate circuit inputs, to tailor the performance and response of the floating-gate device. There is no need to use a control gate in the floating-gate structures disclosed herein.

Abstract: A method and apparatus for trimming a high-resolution digital-to-analog converter (DAC) utilizes floating-gate synapse transistors to trim the current sources in the DAC by providing a trimmable current source. Fowler-Nordheim electron tunneling and hot electron injection are the mechanisms used to vary the amount of charge on the floating gate. Since floating gate devices store charge essentially indefinitely, no continuous trimming mechanism is required, although one could be implemented if desired. By trimming the current sources with high accuracy, a DAC can be built with a much higher resolution and with smaller size than that provided by intrinsic device matching.

Abstract: Hot-electron injection driven by hole impact ionization in the channel-to-drain junction of a p-channel MOSFET provides a new mechanism for writing a floating-gate memory. Various pFET floating-gate structures use a combination of this mechanism and electron tunneling to implement nonvolatile analog memory, nonvolatile digital memory, or on-line learning in silicon. The memory is nonvolatile because the devices use electrically isolated floating gates to store electronic charge. The devices enable on-line learning because the electron injection and tunneling mechanisms that write the memory can occur during normal device operation. The memory updates and learning are bidirectional because the injection and tunneling mechanisms add and remove electrons from the floating gate, respectively. Because the memory updates depend on both the stored memory and the pFETs terminal voltages, and because they are bidirectional, the devices can implement on-line learning functions.

Abstract: Fast switching and fast settling is achieved in a phase locked loop (“PLL”) containing a bandwidth switched active loop filter (8) by feeding the phase error signal of the phase detector (1) of the PLL to the non-inverting input of the amplifier (7) within the loop filter and having the electronic switch (17) control the loop filter bandwidth through changing the resistance (9, 11) to ground at the inverting input of the amplifier between a high and low value associated respectively with broad bandwidth and narrow bandwidth to the loop filter. Switching is possible in as little as one microsecond, and is accompanied by fast settling of the loop with minimal generation of phase/frequency perturbation. The foregoing PLL is of particular benefit in fast switching frequency synthesizers, such as used in frequency hopping frequency synthesizers of frequency and time division multiplexing systems.

Abstract: An apparatus using an optical signal for actively tuning an optical interferometer without introducing any dither in its optical path length.

Abstract: A high speed differential optoelectronic receiver comprises a first photodetector responsive to a first incident amplitude modulated optical signal and operative to develop a first electrical signal, a second photodetector responsive to a second incident amplitude modulated optical signal that is complementary to the first optical signal and operative to develop a second electrical signal, and an amplifier having a first input that is responsive to the first electrical signal and a second input that is responsive to the second electrical signal and is operative to provide a differential output signal that is proportional to the difference between the first and the second electrical signals. Also, a method for transforming complementary amplitude modulated optical signals into a complementary electrical output signal is invented.